CN1954428B - 半导体存储器件 - Google Patents
半导体存储器件 Download PDFInfo
- Publication number
- CN1954428B CN1954428B CN2005800153010A CN200580015301A CN1954428B CN 1954428 B CN1954428 B CN 1954428B CN 2005800153010 A CN2005800153010 A CN 2005800153010A CN 200580015301 A CN200580015301 A CN 200580015301A CN 1954428 B CN1954428 B CN 1954428B
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- Prior art keywords
- mentioned
- interlayer dielectric
- film
- connector
- knitting layer
- Prior art date
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004144704 | 2004-05-14 | ||
JP144704/2004 | 2004-05-14 | ||
PCT/JP2005/008419 WO2005112118A1 (ja) | 2004-05-14 | 2005-05-09 | 半導体記憶装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010162083A Division CN101834198A (zh) | 2004-05-14 | 2005-05-09 | 半导体存储器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1954428A CN1954428A (zh) | 2007-04-25 |
CN1954428B true CN1954428B (zh) | 2010-09-29 |
Family
ID=35394429
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800153010A Active CN1954428B (zh) | 2004-05-14 | 2005-05-09 | 半导体存储器件 |
CN201010162083A Pending CN101834198A (zh) | 2004-05-14 | 2005-05-09 | 半导体存储器件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010162083A Pending CN101834198A (zh) | 2004-05-14 | 2005-05-09 | 半导体存储器件 |
Country Status (7)
Country | Link |
---|---|
US (6) | US20070170413A1 (zh) |
EP (1) | EP1748488B1 (zh) |
JP (2) | JP5281746B2 (zh) |
KR (1) | KR101029339B1 (zh) |
CN (2) | CN1954428B (zh) |
TW (2) | TWI487093B (zh) |
WO (1) | WO2005112118A1 (zh) |
Families Citing this family (47)
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US7390691B2 (en) | 2005-10-28 | 2008-06-24 | Intel Corporation | Increasing phase change memory column landing margin |
JP2007165710A (ja) * | 2005-12-15 | 2007-06-28 | Elpida Memory Inc | 不揮発性メモリ素子の製造方法 |
KR100718156B1 (ko) * | 2006-02-27 | 2007-05-14 | 삼성전자주식회사 | 상전이 메모리 소자 및 그 제조방법 |
US7324365B2 (en) * | 2006-03-02 | 2008-01-29 | Infineon Technologies Ag | Phase change memory fabricated using self-aligned processing |
US8395199B2 (en) * | 2006-03-25 | 2013-03-12 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
US20070249116A1 (en) * | 2006-04-19 | 2007-10-25 | Philipp Jan B | Transitioning the state of phase change material by annealing |
US7414883B2 (en) * | 2006-04-20 | 2008-08-19 | Intel Corporation | Programming a normally single phase chalcogenide material for use as a memory or FPLA |
US8618523B2 (en) | 2006-05-31 | 2013-12-31 | Renesas Electronics Corporation | Semiconductor device |
JP5039035B2 (ja) * | 2006-06-23 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JPWO2008001411A1 (ja) * | 2006-06-23 | 2009-11-19 | 株式会社ルネサステクノロジ | 半導体記憶装置の製造方法 |
US7932548B2 (en) | 2006-07-14 | 2011-04-26 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
JP5072843B2 (ja) * | 2006-07-21 | 2012-11-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2008035392A1 (fr) * | 2006-09-19 | 2008-03-27 | Renesas Technology Corp. | Dispositif de circuit intégré à semi-conducteur |
WO2008041285A1 (fr) * | 2006-09-29 | 2008-04-10 | Renesas Technology Corp. | Procédé de production d'un dispositif de mémoire à semi-conducteurs |
KR100766499B1 (ko) * | 2006-10-20 | 2007-10-15 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
KR101131137B1 (ko) * | 2006-11-30 | 2012-04-03 | 삼성전자주식회사 | 확산 방지막을 포함하는 상변화 메모리 소자 및 그제조방법 |
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DE102007035857A1 (de) * | 2007-07-31 | 2009-02-05 | Qimonda Ag | Verfahren zum Herstellen einer Speichervorrichtung, Speichervorrichtung, Zelle, integrierte Schaltung, Speichermodul und Computersystem |
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JP5799504B2 (ja) * | 2009-01-09 | 2015-10-28 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US8344343B2 (en) * | 2009-04-01 | 2013-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite film for phase change memory devices |
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TWI469408B (zh) * | 2012-05-07 | 2015-01-11 | Univ Feng Chia | 超薄與多層結構相變化記憶體元件 |
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JP2020047743A (ja) | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 記憶装置 |
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-
2005
- 2005-05-09 EP EP05737197A patent/EP1748488B1/en active Active
- 2005-05-09 WO PCT/JP2005/008419 patent/WO2005112118A1/ja not_active Application Discontinuation
- 2005-05-09 CN CN2005800153010A patent/CN1954428B/zh active Active
- 2005-05-09 CN CN201010162083A patent/CN101834198A/zh active Pending
- 2005-05-09 US US11/596,220 patent/US20070170413A1/en not_active Abandoned
- 2005-05-09 KR KR1020067023717A patent/KR101029339B1/ko active IP Right Grant
- 2005-05-09 JP JP2006513531A patent/JP5281746B2/ja active Active
- 2005-05-13 TW TW100145624A patent/TWI487093B/zh active
- 2005-05-13 TW TW094115624A patent/TW200620632A/zh unknown
-
2009
- 2009-11-05 US US12/613,235 patent/US8890107B2/en active Active
-
2011
- 2011-10-03 JP JP2011218893A patent/JP5466681B2/ja active Active
- 2011-12-07 US US13/314,154 patent/US8859344B2/en active Active
- 2011-12-07 US US13/314,165 patent/US8866120B2/en active Active
-
2012
- 2012-06-11 US US13/493,442 patent/US20120241715A1/en not_active Abandoned
-
2015
- 2015-04-09 US US14/683,112 patent/US20150214476A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20070009702A (ko) | 2007-01-18 |
KR101029339B1 (ko) | 2011-04-13 |
US20120241715A1 (en) | 2012-09-27 |
US8866120B2 (en) | 2014-10-21 |
US8859344B2 (en) | 2014-10-14 |
TWI367561B (zh) | 2012-07-01 |
EP1748488B1 (en) | 2012-08-29 |
JP5281746B2 (ja) | 2013-09-04 |
US20070170413A1 (en) | 2007-07-26 |
EP1748488A1 (en) | 2007-01-31 |
JPWO2005112118A1 (ja) | 2008-03-27 |
TW201222787A (en) | 2012-06-01 |
WO2005112118A1 (ja) | 2005-11-24 |
US20120077325A1 (en) | 2012-03-29 |
US20150214476A1 (en) | 2015-07-30 |
JP2012039134A (ja) | 2012-02-23 |
US20100044672A1 (en) | 2010-02-25 |
CN1954428A (zh) | 2007-04-25 |
TWI487093B (zh) | 2015-06-01 |
US20120074377A1 (en) | 2012-03-29 |
US8890107B2 (en) | 2014-11-18 |
TW200620632A (en) | 2006-06-16 |
JP5466681B2 (ja) | 2014-04-09 |
EP1748488A4 (en) | 2010-04-07 |
CN101834198A (zh) | 2010-09-15 |
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