|
US7778063B2
(en)
*
|
2006-11-08 |
2010-08-17 |
Symetrix Corporation |
Non-volatile resistance switching memories and methods of making same
|
|
US20090180313A1
(en)
*
|
2008-01-15 |
2009-07-16 |
Wim Deweerd |
Chalcogenide anti-fuse
|
|
US20100225989A1
(en)
*
|
2009-03-05 |
2010-09-09 |
The Regents Of The University Of California |
Phase change device
|
|
US8354660B2
(en)
*
|
2010-03-16 |
2013-01-15 |
Sandisk 3D Llc |
Bottom electrodes for use with metal oxide resistivity switching layers
|
|
US8946046B1
(en)
|
2012-05-02 |
2015-02-03 |
Crossbar, Inc. |
Guided path for forming a conductive filament in RRAM
|
|
US9570678B1
(en)
|
2010-06-08 |
2017-02-14 |
Crossbar, Inc. |
Resistive RAM with preferental filament formation region and methods
|
|
US9601692B1
(en)
|
2010-07-13 |
2017-03-21 |
Crossbar, Inc. |
Hetero-switching layer in a RRAM device and method
|
|
US9012307B2
(en)
|
2010-07-13 |
2015-04-21 |
Crossbar, Inc. |
Two terminal resistive switching device structure and method of fabricating
|
|
KR101883236B1
(ko)
|
2010-06-11 |
2018-08-01 |
크로스바, 인크. |
메모리 디바이스를 위한 필러 구조 및 방법
|
|
US8367460B2
(en)
*
|
2010-06-22 |
2013-02-05 |
Micron Technology, Inc. |
Horizontally oriented and vertically stacked memory cells
|
|
US8374018B2
(en)
|
2010-07-09 |
2013-02-12 |
Crossbar, Inc. |
Resistive memory using SiGe material
|
|
US8569172B1
(en)
|
2012-08-14 |
2013-10-29 |
Crossbar, Inc. |
Noble metal/non-noble metal electrode for RRAM applications
|
|
US8467227B1
(en)
|
2010-11-04 |
2013-06-18 |
Crossbar, Inc. |
Hetero resistive switching material layer in RRAM device and method
|
|
US8947908B2
(en)
|
2010-11-04 |
2015-02-03 |
Crossbar, Inc. |
Hetero-switching layer in a RRAM device and method
|
|
US8884261B2
(en)
|
2010-08-23 |
2014-11-11 |
Crossbar, Inc. |
Device switching using layered device structure
|
|
US8168506B2
(en)
|
2010-07-13 |
2012-05-01 |
Crossbar, Inc. |
On/off ratio for non-volatile memory device and method
|
|
US8889521B1
(en)
|
2012-09-14 |
2014-11-18 |
Crossbar, Inc. |
Method for silver deposition for a non-volatile memory device
|
|
US9401475B1
(en)
|
2010-08-23 |
2016-07-26 |
Crossbar, Inc. |
Method for silver deposition for a non-volatile memory device
|
|
US8492195B2
(en)
|
2010-08-23 |
2013-07-23 |
Crossbar, Inc. |
Method for forming stackable non-volatile resistive switching memory devices
|
|
US8404553B2
(en)
|
2010-08-23 |
2013-03-26 |
Crossbar, Inc. |
Disturb-resistant non-volatile memory device and method
|
|
US8558212B2
(en)
|
2010-09-29 |
2013-10-15 |
Crossbar, Inc. |
Conductive path in switching material in a resistive random access memory device and control
|
|
US8391049B2
(en)
|
2010-09-29 |
2013-03-05 |
Crossbar, Inc. |
Resistor structure for a non-volatile memory device and method
|
|
US8841648B2
(en)
|
2010-10-14 |
2014-09-23 |
Sandisk 3D Llc |
Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
|
|
US8389971B2
(en)
|
2010-10-14 |
2013-03-05 |
Sandisk 3D Llc |
Memory cells having storage elements that share material layers with steering elements and methods of forming the same
|
|
USRE46335E1
(en)
|
2010-11-04 |
2017-03-07 |
Crossbar, Inc. |
Switching device having a non-linear element
|
|
US8502185B2
(en)
|
2011-05-31 |
2013-08-06 |
Crossbar, Inc. |
Switching device having a non-linear element
|
|
US8930174B2
(en)
|
2010-12-28 |
2015-01-06 |
Crossbar, Inc. |
Modeling technique for resistive random access memory (RRAM) cells
|
|
US8791010B1
(en)
|
2010-12-31 |
2014-07-29 |
Crossbar, Inc. |
Silver interconnects for stacked non-volatile memory device and method
|
|
US8815696B1
(en)
|
2010-12-31 |
2014-08-26 |
Crossbar, Inc. |
Disturb-resistant non-volatile memory device using via-fill and etchback technique
|
|
US9153623B1
(en)
|
2010-12-31 |
2015-10-06 |
Crossbar, Inc. |
Thin film transistor steering element for a non-volatile memory device
|
|
US20120193349A1
(en)
*
|
2011-01-28 |
2012-08-02 |
Greentech Solutions, Inc. |
Heating layers containing volatile components at elevated temperatures
|
|
KR101724084B1
(ko)
*
|
2011-03-03 |
2017-04-07 |
삼성전자 주식회사 |
반도체 소자의 제조방법
|
|
US9620206B2
(en)
|
2011-05-31 |
2017-04-11 |
Crossbar, Inc. |
Memory array architecture with two-terminal memory cells
|
|
US8619459B1
(en)
|
2011-06-23 |
2013-12-31 |
Crossbar, Inc. |
High operating speed resistive random access memory
|
|
FR2977077B1
(fr)
*
|
2011-06-27 |
2013-08-02 |
Commissariat Energie Atomique |
Generateur de retards utilisant une resistance programmable a base de materiau a changement de phase
|
|
US9627443B2
(en)
|
2011-06-30 |
2017-04-18 |
Crossbar, Inc. |
Three-dimensional oblique two-terminal memory with enhanced electric field
|
|
US9166163B2
(en)
|
2011-06-30 |
2015-10-20 |
Crossbar, Inc. |
Sub-oxide interface layer for two-terminal memory
|
|
US8659929B2
(en)
|
2011-06-30 |
2014-02-25 |
Crossbar, Inc. |
Amorphous silicon RRAM with non-linear device and operation
|
|
US8946669B1
(en)
|
2012-04-05 |
2015-02-03 |
Crossbar, Inc. |
Resistive memory device and fabrication methods
|
|
US9564587B1
(en)
|
2011-06-30 |
2017-02-07 |
Crossbar, Inc. |
Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
|
|
CN103828047A
(zh)
|
2011-07-22 |
2014-05-28 |
科洛斯巴股份有限公司 |
用于非易失性存储器装置的p+硅锗材料的种子层及方法
|
|
US9729155B2
(en)
|
2011-07-29 |
2017-08-08 |
Crossbar, Inc. |
Field programmable gate array utilizing two-terminal non-volatile memory
|
|
US10056907B1
(en)
|
2011-07-29 |
2018-08-21 |
Crossbar, Inc. |
Field programmable gate array utilizing two-terminal non-volatile memory
|
|
US8674724B2
(en)
|
2011-07-29 |
2014-03-18 |
Crossbar, Inc. |
Field programmable gate array utilizing two-terminal non-volatile memory
|
|
US8716098B1
(en)
|
2012-03-09 |
2014-05-06 |
Crossbar, Inc. |
Selective removal method and structure of silver in resistive switching device for a non-volatile memory device
|
|
US9087576B1
(en)
|
2012-03-29 |
2015-07-21 |
Crossbar, Inc. |
Low temperature fabrication method for a three-dimensional memory device and structure
|
|
US9685608B2
(en)
|
2012-04-13 |
2017-06-20 |
Crossbar, Inc. |
Reduced diffusion in metal electrode for two-terminal memory
|
|
US8658476B1
(en)
|
2012-04-20 |
2014-02-25 |
Crossbar, Inc. |
Low temperature P+ polycrystalline silicon material for non-volatile memory device
|
|
US8796658B1
(en)
|
2012-05-07 |
2014-08-05 |
Crossbar, Inc. |
Filamentary based non-volatile resistive memory device and method
|
|
US8765566B2
(en)
|
2012-05-10 |
2014-07-01 |
Crossbar, Inc. |
Line and space architecture for a non-volatile memory device
|
|
US10096653B2
(en)
|
2012-08-14 |
2018-10-09 |
Crossbar, Inc. |
Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
|
|
US9583701B1
(en)
|
2012-08-14 |
2017-02-28 |
Crossbar, Inc. |
Methods for fabricating resistive memory device switching material using ion implantation
|
|
US8946673B1
(en)
|
2012-08-24 |
2015-02-03 |
Crossbar, Inc. |
Resistive switching device structure with improved data retention for non-volatile memory device and method
|
|
US9312483B2
(en)
|
2012-09-24 |
2016-04-12 |
Crossbar, Inc. |
Electrode structure for a non-volatile memory device and method
|
|
US9576616B2
(en)
|
2012-10-10 |
2017-02-21 |
Crossbar, Inc. |
Non-volatile memory with overwrite capability and low write amplification
|
|
US11068620B2
(en)
|
2012-11-09 |
2021-07-20 |
Crossbar, Inc. |
Secure circuit integrated with memory layer
|
|
US8982647B2
(en)
|
2012-11-14 |
2015-03-17 |
Crossbar, Inc. |
Resistive random access memory equalization and sensing
|
|
US9412790B1
(en)
|
2012-12-04 |
2016-08-09 |
Crossbar, Inc. |
Scalable RRAM device architecture for a non-volatile memory device and method
|
|
US9406379B2
(en)
|
2013-01-03 |
2016-08-02 |
Crossbar, Inc. |
Resistive random access memory with non-linear current-voltage relationship
|
|
US9112145B1
(en)
|
2013-01-31 |
2015-08-18 |
Crossbar, Inc. |
Rectified switching of two-terminal memory via real time filament formation
|
|
US9324942B1
(en)
|
2013-01-31 |
2016-04-26 |
Crossbar, Inc. |
Resistive memory cell with solid state diode
|
|
US8934280B1
(en)
|
2013-02-06 |
2015-01-13 |
Crossbar, Inc. |
Capacitive discharge programming for two-terminal memory cells
|
|
US10290801B2
(en)
|
2014-02-07 |
2019-05-14 |
Crossbar, Inc. |
Scalable silicon based resistive memory device
|
|
KR101573015B1
(ko)
*
|
2015-01-09 |
2015-11-30 |
연세대학교 산학협력단 |
활성화에너지가 감소한 상변화물질과 이를 포함하는 상변화 메모리 저항소자 및 이의 제조방법
|
|
US10424731B2
(en)
|
2015-03-13 |
2019-09-24 |
Toshiba Memory Corporation |
Memory device
|
|
KR20180107806A
(ko)
*
|
2017-03-22 |
2018-10-04 |
삼성전자주식회사 |
막 형성 방법, 및 이를 이용한 가변 저항 메모리 소자의 제조방법
|
|
KR20190007642A
(ko)
*
|
2017-07-13 |
2019-01-23 |
에스케이하이닉스 주식회사 |
다수의 시냅스 블록들을 갖는 뉴로모픽 소자
|
|
US10937961B2
(en)
|
2018-11-06 |
2021-03-02 |
International Business Machines Corporation |
Structure and method to form bi-layer composite phase-change-memory cell
|
|
US11659780B2
(en)
|
2019-03-05 |
2023-05-23 |
International Business Machines Corporation |
Phase change memory structure with efficient heating system
|