JP2011505708A5 - - Google Patents

Download PDF

Info

Publication number
JP2011505708A5
JP2011505708A5 JP2010536925A JP2010536925A JP2011505708A5 JP 2011505708 A5 JP2011505708 A5 JP 2011505708A5 JP 2010536925 A JP2010536925 A JP 2010536925A JP 2010536925 A JP2010536925 A JP 2010536925A JP 2011505708 A5 JP2011505708 A5 JP 2011505708A5
Authority
JP
Japan
Prior art keywords
electrode
layer
active layer
confinement
covers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010536925A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011505708A (ja
Filing date
Publication date
Priority claimed from US11/999,158 external-priority patent/US7718990B2/en
Application filed filed Critical
Publication of JP2011505708A publication Critical patent/JP2011505708A/ja
Publication of JP2011505708A5 publication Critical patent/JP2011505708A5/ja
Pending legal-status Critical Current

Links

JP2010536925A 2007-12-04 2008-12-04 閉じ込め層を有する活物質素子 Pending JP2011505708A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/999,158 US7718990B2 (en) 2007-12-04 2007-12-04 Active material devices with containment layer
PCT/US2008/013330 WO2009073188A2 (en) 2007-12-04 2008-12-04 Active material devices with containment layer

Publications (2)

Publication Number Publication Date
JP2011505708A JP2011505708A (ja) 2011-02-24
JP2011505708A5 true JP2011505708A5 (enExample) 2011-09-29

Family

ID=40674790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010536925A Pending JP2011505708A (ja) 2007-12-04 2008-12-04 閉じ込め層を有する活物質素子

Country Status (5)

Country Link
US (2) US7718990B2 (enExample)
JP (1) JP2011505708A (enExample)
KR (1) KR101006218B1 (enExample)
TW (1) TWI470847B (enExample)
WO (1) WO2009073188A2 (enExample)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7778063B2 (en) * 2006-11-08 2010-08-17 Symetrix Corporation Non-volatile resistance switching memories and methods of making same
US20090180313A1 (en) * 2008-01-15 2009-07-16 Wim Deweerd Chalcogenide anti-fuse
US20100225989A1 (en) * 2009-03-05 2010-09-09 The Regents Of The University Of California Phase change device
US8354660B2 (en) * 2010-03-16 2013-01-15 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
US8946046B1 (en) 2012-05-02 2015-02-03 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
US9570678B1 (en) 2010-06-08 2017-02-14 Crossbar, Inc. Resistive RAM with preferental filament formation region and methods
US9601692B1 (en) 2010-07-13 2017-03-21 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US9012307B2 (en) 2010-07-13 2015-04-21 Crossbar, Inc. Two terminal resistive switching device structure and method of fabricating
KR101883236B1 (ko) 2010-06-11 2018-08-01 크로스바, 인크. 메모리 디바이스를 위한 필러 구조 및 방법
US8367460B2 (en) * 2010-06-22 2013-02-05 Micron Technology, Inc. Horizontally oriented and vertically stacked memory cells
US8374018B2 (en) 2010-07-09 2013-02-12 Crossbar, Inc. Resistive memory using SiGe material
US8569172B1 (en) 2012-08-14 2013-10-29 Crossbar, Inc. Noble metal/non-noble metal electrode for RRAM applications
US8467227B1 (en) 2010-11-04 2013-06-18 Crossbar, Inc. Hetero resistive switching material layer in RRAM device and method
US8947908B2 (en) 2010-11-04 2015-02-03 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US8884261B2 (en) 2010-08-23 2014-11-11 Crossbar, Inc. Device switching using layered device structure
US8168506B2 (en) 2010-07-13 2012-05-01 Crossbar, Inc. On/off ratio for non-volatile memory device and method
US8889521B1 (en) 2012-09-14 2014-11-18 Crossbar, Inc. Method for silver deposition for a non-volatile memory device
US9401475B1 (en) 2010-08-23 2016-07-26 Crossbar, Inc. Method for silver deposition for a non-volatile memory device
US8492195B2 (en) 2010-08-23 2013-07-23 Crossbar, Inc. Method for forming stackable non-volatile resistive switching memory devices
US8404553B2 (en) 2010-08-23 2013-03-26 Crossbar, Inc. Disturb-resistant non-volatile memory device and method
US8558212B2 (en) 2010-09-29 2013-10-15 Crossbar, Inc. Conductive path in switching material in a resistive random access memory device and control
US8391049B2 (en) 2010-09-29 2013-03-05 Crossbar, Inc. Resistor structure for a non-volatile memory device and method
US8841648B2 (en) 2010-10-14 2014-09-23 Sandisk 3D Llc Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
US8389971B2 (en) 2010-10-14 2013-03-05 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
USRE46335E1 (en) 2010-11-04 2017-03-07 Crossbar, Inc. Switching device having a non-linear element
US8502185B2 (en) 2011-05-31 2013-08-06 Crossbar, Inc. Switching device having a non-linear element
US8930174B2 (en) 2010-12-28 2015-01-06 Crossbar, Inc. Modeling technique for resistive random access memory (RRAM) cells
US8791010B1 (en) 2010-12-31 2014-07-29 Crossbar, Inc. Silver interconnects for stacked non-volatile memory device and method
US8815696B1 (en) 2010-12-31 2014-08-26 Crossbar, Inc. Disturb-resistant non-volatile memory device using via-fill and etchback technique
US9153623B1 (en) 2010-12-31 2015-10-06 Crossbar, Inc. Thin film transistor steering element for a non-volatile memory device
US20120193349A1 (en) * 2011-01-28 2012-08-02 Greentech Solutions, Inc. Heating layers containing volatile components at elevated temperatures
KR101724084B1 (ko) * 2011-03-03 2017-04-07 삼성전자 주식회사 반도체 소자의 제조방법
US9620206B2 (en) 2011-05-31 2017-04-11 Crossbar, Inc. Memory array architecture with two-terminal memory cells
US8619459B1 (en) 2011-06-23 2013-12-31 Crossbar, Inc. High operating speed resistive random access memory
FR2977077B1 (fr) * 2011-06-27 2013-08-02 Commissariat Energie Atomique Generateur de retards utilisant une resistance programmable a base de materiau a changement de phase
US9627443B2 (en) 2011-06-30 2017-04-18 Crossbar, Inc. Three-dimensional oblique two-terminal memory with enhanced electric field
US9166163B2 (en) 2011-06-30 2015-10-20 Crossbar, Inc. Sub-oxide interface layer for two-terminal memory
US8659929B2 (en) 2011-06-30 2014-02-25 Crossbar, Inc. Amorphous silicon RRAM with non-linear device and operation
US8946669B1 (en) 2012-04-05 2015-02-03 Crossbar, Inc. Resistive memory device and fabrication methods
US9564587B1 (en) 2011-06-30 2017-02-07 Crossbar, Inc. Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
CN103828047A (zh) 2011-07-22 2014-05-28 科洛斯巴股份有限公司 用于非易失性存储器装置的p+硅锗材料的种子层及方法
US9729155B2 (en) 2011-07-29 2017-08-08 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
US10056907B1 (en) 2011-07-29 2018-08-21 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
US8674724B2 (en) 2011-07-29 2014-03-18 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
US8716098B1 (en) 2012-03-09 2014-05-06 Crossbar, Inc. Selective removal method and structure of silver in resistive switching device for a non-volatile memory device
US9087576B1 (en) 2012-03-29 2015-07-21 Crossbar, Inc. Low temperature fabrication method for a three-dimensional memory device and structure
US9685608B2 (en) 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US8658476B1 (en) 2012-04-20 2014-02-25 Crossbar, Inc. Low temperature P+ polycrystalline silicon material for non-volatile memory device
US8796658B1 (en) 2012-05-07 2014-08-05 Crossbar, Inc. Filamentary based non-volatile resistive memory device and method
US8765566B2 (en) 2012-05-10 2014-07-01 Crossbar, Inc. Line and space architecture for a non-volatile memory device
US10096653B2 (en) 2012-08-14 2018-10-09 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US9583701B1 (en) 2012-08-14 2017-02-28 Crossbar, Inc. Methods for fabricating resistive memory device switching material using ion implantation
US8946673B1 (en) 2012-08-24 2015-02-03 Crossbar, Inc. Resistive switching device structure with improved data retention for non-volatile memory device and method
US9312483B2 (en) 2012-09-24 2016-04-12 Crossbar, Inc. Electrode structure for a non-volatile memory device and method
US9576616B2 (en) 2012-10-10 2017-02-21 Crossbar, Inc. Non-volatile memory with overwrite capability and low write amplification
US11068620B2 (en) 2012-11-09 2021-07-20 Crossbar, Inc. Secure circuit integrated with memory layer
US8982647B2 (en) 2012-11-14 2015-03-17 Crossbar, Inc. Resistive random access memory equalization and sensing
US9412790B1 (en) 2012-12-04 2016-08-09 Crossbar, Inc. Scalable RRAM device architecture for a non-volatile memory device and method
US9406379B2 (en) 2013-01-03 2016-08-02 Crossbar, Inc. Resistive random access memory with non-linear current-voltage relationship
US9112145B1 (en) 2013-01-31 2015-08-18 Crossbar, Inc. Rectified switching of two-terminal memory via real time filament formation
US9324942B1 (en) 2013-01-31 2016-04-26 Crossbar, Inc. Resistive memory cell with solid state diode
US8934280B1 (en) 2013-02-06 2015-01-13 Crossbar, Inc. Capacitive discharge programming for two-terminal memory cells
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
KR101573015B1 (ko) * 2015-01-09 2015-11-30 연세대학교 산학협력단 활성화에너지가 감소한 상변화물질과 이를 포함하는 상변화 메모리 저항소자 및 이의 제조방법
US10424731B2 (en) 2015-03-13 2019-09-24 Toshiba Memory Corporation Memory device
KR20180107806A (ko) * 2017-03-22 2018-10-04 삼성전자주식회사 막 형성 방법, 및 이를 이용한 가변 저항 메모리 소자의 제조방법
KR20190007642A (ko) * 2017-07-13 2019-01-23 에스케이하이닉스 주식회사 다수의 시냅스 블록들을 갖는 뉴로모픽 소자
US10937961B2 (en) 2018-11-06 2021-03-02 International Business Machines Corporation Structure and method to form bi-layer composite phase-change-memory cell
US11659780B2 (en) 2019-03-05 2023-05-23 International Business Machines Corporation Phase change memory structure with efficient heating system

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6784018B2 (en) * 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US7087919B2 (en) * 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
WO2004008535A1 (ja) * 2002-07-11 2004-01-22 Matsushita Electric Industrial Co., Ltd. 不揮発性メモリおよびその製造方法
KR100481866B1 (ko) * 2002-11-01 2005-04-11 삼성전자주식회사 상변환 기억소자 및 그 제조방법
US7402851B2 (en) * 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
CN1286716C (zh) * 2003-03-19 2006-11-29 清华大学 一种生长碳纳米管的方法
KR20050053255A (ko) * 2003-12-02 2005-06-08 삼성전자주식회사 상변환 기억 소자 및 그 형성 방법
CN1954428B (zh) * 2004-05-14 2010-09-29 株式会社瑞萨科技 半导体存储器件
US7326951B2 (en) * 2004-12-16 2008-02-05 Macronix International Co., Ltd. Chalcogenide random access memory
KR100640620B1 (ko) * 2004-12-27 2006-11-02 삼성전자주식회사 트윈비트 셀 구조의 nor형 플래쉬 메모리 소자 및 그제조 방법
JP4801986B2 (ja) * 2005-02-03 2011-10-26 株式会社東芝 半導体記憶装置
JP2006351992A (ja) * 2005-06-20 2006-12-28 Renesas Technology Corp 半導体記憶装置及びその製造方法
US20070045606A1 (en) * 2005-08-30 2007-03-01 Michele Magistretti Shaping a phase change layer in a phase change memory cell

Similar Documents

Publication Publication Date Title
JP2011505708A5 (enExample)
JP2010098304A5 (enExample)
KR100682948B1 (ko) 상전이 메모리 소자 및 그 제조방법
TW200726306A (en) Surface-mounted over-current protection device
JP2010141308A5 (ja) 半導体装置
WO2008149622A1 (ja) キャパシタ,共振器、フィルタ装置,通信装置、並びに電気回路
WO2018172621A3 (en) Electrostatic actuator structure
JP2010177450A5 (ja) 半導体装置
JP2006173580A5 (enExample)
TW200733364A (en) Thin film fuse phase change cell with thermal isolation pad and manufacturing method
JP2007043176A5 (enExample)
WO2010014974A3 (en) Phase transition devices and smart capacitive devices
WO2009015298A3 (en) Nonvolatile memory elements
JP2006303488A5 (enExample)
JP2011054949A5 (ja) 半導体装置
JP2013254947A5 (ja) 表示装置
JP2010219511A5 (ja) 半導体装置
WO2008099863A1 (ja) 半導体,半導体装置及び相補型トランジスタ回路装置
TW200943546A (en) Thermally stabilized electrode structure
WO2008102718A1 (ja) 半導体記憶装置
TW200742106A (en) Photoelectric conversion device, manufacturing method thereof and semiconductor device
WO2009013826A1 (ja) 半導体装置
JP2010135778A5 (ja) 半導体装置
JPWO2019135137A5 (ja) 半導体装置
CN105206743A (zh) 具有多层器件结构的电阻式随机存取存储器(rram)