JP2006352082A - 半導体記憶装置及びその製造方法 - Google Patents

半導体記憶装置及びその製造方法 Download PDF

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Publication number
JP2006352082A
JP2006352082A JP2006096616A JP2006096616A JP2006352082A JP 2006352082 A JP2006352082 A JP 2006352082A JP 2006096616 A JP2006096616 A JP 2006096616A JP 2006096616 A JP2006096616 A JP 2006096616A JP 2006352082 A JP2006352082 A JP 2006352082A
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Japan
Prior art keywords
plug
interlayer insulating
layer
oxide film
insulating film
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Pending
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JP2006096616A
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English (en)
Japanese (ja)
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JP2006352082A5 (enExample
Inventor
Yuichi Matsui
裕一 松井
Tomio Iwasaki
富生 岩▲崎▼
Norikatsu Takaura
則克 高浦
Kenzo Kurotsuchi
健三 黒土
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Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2006096616A priority Critical patent/JP2006352082A/ja
Priority to TW095116726A priority patent/TW200711107A/zh
Priority to US11/435,934 priority patent/US20060266992A1/en
Priority to KR1020060044768A priority patent/KR20060120463A/ko
Priority to CNB2006100826407A priority patent/CN100521224C/zh
Publication of JP2006352082A publication Critical patent/JP2006352082A/ja
Publication of JP2006352082A5 publication Critical patent/JP2006352082A5/ja
Priority to JP2011000036A priority patent/JP2011091433A/ja
Priority to US13/108,174 priority patent/US20110215288A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8616—Thermal insulation means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2006096616A 2005-05-19 2006-03-31 半導体記憶装置及びその製造方法 Pending JP2006352082A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006096616A JP2006352082A (ja) 2005-05-19 2006-03-31 半導体記憶装置及びその製造方法
TW095116726A TW200711107A (en) 2005-05-19 2006-05-11 Semiconductor storage device and manufacturing method thereof
US11/435,934 US20060266992A1 (en) 2005-05-19 2006-05-18 Semiconductor storage device and manufacturing method thereof
KR1020060044768A KR20060120463A (ko) 2005-05-19 2006-05-18 반도체기억장치 및 그 제조방법
CNB2006100826407A CN100521224C (zh) 2005-05-19 2006-05-19 半导体存储器件及其制造方法
JP2011000036A JP2011091433A (ja) 2005-05-19 2011-01-04 半導体記憶装置
US13/108,174 US20110215288A1 (en) 2005-05-19 2011-05-16 Semiconductor storage device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005146387 2005-05-19
JP2006096616A JP2006352082A (ja) 2005-05-19 2006-03-31 半導体記憶装置及びその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2011000036A Division JP2011091433A (ja) 2005-05-19 2011-01-04 半導体記憶装置
JP2011256247A Division JP2012064965A (ja) 2005-05-19 2011-11-24 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2006352082A true JP2006352082A (ja) 2006-12-28
JP2006352082A5 JP2006352082A5 (enExample) 2009-03-19

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Family Applications (2)

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JP2006096616A Pending JP2006352082A (ja) 2005-05-19 2006-03-31 半導体記憶装置及びその製造方法
JP2011000036A Pending JP2011091433A (ja) 2005-05-19 2011-01-04 半導体記憶装置

Family Applications After (1)

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JP2011000036A Pending JP2011091433A (ja) 2005-05-19 2011-01-04 半導体記憶装置

Country Status (5)

Country Link
US (2) US20060266992A1 (enExample)
JP (2) JP2006352082A (enExample)
KR (1) KR20060120463A (enExample)
CN (1) CN100521224C (enExample)
TW (1) TW200711107A (enExample)

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JP2008182234A (ja) * 2007-01-23 2008-08-07 Samsung Electronics Co Ltd 相変化記憶素子およびその形成方法
JP2008288292A (ja) * 2007-05-16 2008-11-27 Renesas Technology Corp 半導体記憶装置及びその製造方法
JP2009049254A (ja) * 2007-08-22 2009-03-05 Renesas Technology Corp 半導体記憶装置
JP2009071304A (ja) * 2007-09-10 2009-04-02 Samsung Electronics Co Ltd 抵抗変化型メモリ素子及びその形成方法
KR100891523B1 (ko) * 2007-07-20 2009-04-06 주식회사 하이닉스반도체 상변화 기억 소자
JP2009135219A (ja) * 2007-11-29 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
KR100905420B1 (ko) 2007-08-06 2009-07-02 재단법인서울대학교산학협력재단 저항변화기록소자, 그 제조방법, 정보기록방법 및정보판독방법
JP2010529644A (ja) * 2007-05-25 2010-08-26 マイクロン テクノロジー， インク． 界面接着加熱層を有する可変抵抗メモリデバイス、それを使用するシステム、及び、それを形成する方法
WO2010140210A1 (ja) * 2009-06-01 2010-12-09 株式会社日立製作所 半導体記憶装置およびその製造方法
US8143611B2 (en) 2008-06-18 2012-03-27 Canon Anelva Corporation Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method
JP2013175570A (ja) * 2012-02-24 2013-09-05 National Institute Of Advanced Industrial & Technology 半導体記憶装置およびその製造方法
JP2014530491A (ja) * 2011-09-14 2014-11-17 インテル・コーポレーション 抵抗変化メモリ装置用電極
US11508906B2 (en) 2019-09-04 2022-11-22 Kioxia Corporation Semiconductor memory device

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US7214958B2 (en) * 2005-02-10 2007-05-08 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
JP2008021668A (ja) * 2006-07-10 2008-01-31 Renesas Technology Corp 相変化型不揮発性メモリおよびその製造方法
KR100889743B1 (ko) * 2006-12-07 2009-03-24 한국전자통신연구원 상변화 메모리 소자 및 그 제조 방법
US7888719B2 (en) * 2007-05-23 2011-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structures
US8410607B2 (en) * 2007-06-15 2013-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structures
KR100960013B1 (ko) * 2008-07-24 2010-05-28 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
KR101019989B1 (ko) * 2008-10-21 2011-03-09 주식회사 하이닉스반도체 상변화 메모리 소자 및 그 제조방법
CN101814578B (zh) * 2009-02-20 2012-03-21 台湾积体电路制造股份有限公司 半导体元件及其制造方法
US8138056B2 (en) 2009-07-03 2012-03-20 International Business Machines Corporation Thermally insulated phase change material memory cells with pillar structure
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
US8105859B2 (en) * 2009-09-09 2012-01-31 International Business Machines Corporation In via formed phase change memory cell with recessed pillar heater
US8247789B2 (en) 2010-08-31 2012-08-21 Micron Technology, Inc. Memory cells and methods of forming memory cells
US8227785B2 (en) * 2010-11-11 2012-07-24 Micron Technology, Inc. Chalcogenide containing semiconductors with chalcogenide gradient
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8729522B2 (en) 2012-10-23 2014-05-20 Micron Technology, Inc. Memory constructions comprising thin films of phase change material
US9047938B2 (en) 2013-02-25 2015-06-02 International Business Machines Corporation Phase change memory management
US20150037613A1 (en) * 2013-07-30 2015-02-05 Seagate Technology Llc Magnetic devices with overcoats
KR101882604B1 (ko) 2014-05-12 2018-08-24 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 결정 배향층 적층 구조체, 전자 메모리 및 결정 배향층 적층 구조체의 제조 방법
KR20160049299A (ko) * 2014-10-27 2016-05-09 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US10304482B2 (en) 2015-03-22 2019-05-28 Seagate Technology Llc Devices including an overcoat layer
KR102584288B1 (ko) * 2016-08-03 2023-09-27 삼성전자주식회사 비휘발성 메모리 장치
CN108987362B (zh) * 2017-05-31 2020-10-16 华邦电子股份有限公司 内连线结构、其制造方法与半导体结构
EP3707211A1 (en) 2017-11-07 2020-09-16 Masonite Corporation Articles made from lipophilic-rich cellulosic material and methods therefor
US10580976B2 (en) 2018-03-19 2020-03-03 Sandisk Technologies Llc Three-dimensional phase change memory device having a laterally constricted element and method of making the same
JP2020047743A (ja) 2018-09-18 2020-03-26 キオクシア株式会社 記憶装置
US11587978B2 (en) 2018-09-19 2023-02-21 International Business Machines Corporation Phase change memory with improved recovery from element segregation
US11647683B2 (en) 2019-09-20 2023-05-09 International Business Machines Corporation Phase change memory cell with a thermal barrier layer
US11380843B2 (en) * 2020-02-13 2022-07-05 International Business Machines Corporation Phase change memory using multiple stacks of PCM materials

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JP2008522400A (ja) * 2004-11-30 2008-06-26 エヌエックスピー ビー ヴィ 熱電プログラマブル装置のアンチヒューズ

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Cited By (21)

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Publication number Priority date Publication date Assignee Title
JP2008182234A (ja) * 2007-01-23 2008-08-07 Samsung Electronics Co Ltd 相変化記憶素子およびその形成方法
JP2008288292A (ja) * 2007-05-16 2008-11-27 Renesas Technology Corp 半導体記憶装置及びその製造方法
US8717799B2 (en) 2007-05-25 2014-05-06 Micron Technology, Inc. Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
JP2010529644A (ja) * 2007-05-25 2010-08-26 マイクロン テクノロジー， インク． 界面接着加熱層を有する可変抵抗メモリデバイス、それを使用するシステム、及び、それを形成する方法
KR100891523B1 (ko) * 2007-07-20 2009-04-06 주식회사 하이닉스반도체 상변화 기억 소자
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JP2009049254A (ja) * 2007-08-22 2009-03-05 Renesas Technology Corp 半導体記憶装置
JP2009071304A (ja) * 2007-09-10 2009-04-02 Samsung Electronics Co Ltd 抵抗変化型メモリ素子及びその形成方法
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JP2009135219A (ja) * 2007-11-29 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
US8143611B2 (en) 2008-06-18 2012-03-27 Canon Anelva Corporation Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method
WO2010140210A1 (ja) * 2009-06-01 2010-12-09 株式会社日立製作所 半導体記憶装置およびその製造方法
JPWO2010140210A1 (ja) * 2009-06-01 2012-11-15 株式会社日立製作所 半導体記憶装置およびその製造方法
JP2014530491A (ja) * 2011-09-14 2014-11-17 インテル・コーポレーション 抵抗変化メモリ装置用電極
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JP2013175570A (ja) * 2012-02-24 2013-09-05 National Institute Of Advanced Industrial & Technology 半導体記憶装置およびその製造方法
US11508906B2 (en) 2019-09-04 2022-11-22 Kioxia Corporation Semiconductor memory device

Also Published As

Publication number Publication date
US20060266992A1 (en) 2006-11-30
JP2011091433A (ja) 2011-05-06
CN1866533A (zh) 2006-11-22
KR20060120463A (ko) 2006-11-27
US20110215288A1 (en) 2011-09-08
TW200711107A (en) 2007-03-16
CN100521224C (zh) 2009-07-29

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