CN100521224C - 半导体存储器件及其制造方法 - Google Patents

半导体存储器件及其制造方法 Download PDF

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Publication number
CN100521224C
CN100521224C CNB2006100826407A CN200610082640A CN100521224C CN 100521224 C CN100521224 C CN 100521224C CN B2006100826407 A CNB2006100826407 A CN B2006100826407A CN 200610082640 A CN200610082640 A CN 200610082640A CN 100521224 C CN100521224 C CN 100521224C
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China
Prior art keywords
plug
interlayer insulating
interface layer
layer
oxide film
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Expired - Fee Related
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CNB2006100826407A
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English (en)
Chinese (zh)
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CN1866533A (zh
Inventor
松井裕一
岩崎富生
高浦则克
黑土健三
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Renesas Electronics Corp
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Renesas Technology Corp
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Publication of CN1866533A publication Critical patent/CN1866533A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8616—Thermal insulation means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
CNB2006100826407A 2005-05-19 2006-05-19 半导体存储器件及其制造方法 Expired - Fee Related CN100521224C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP146387/2005 2005-05-19
JP2005146387 2005-05-19
JP096616/2006 2006-03-31
JP2006096616A JP2006352082A (ja) 2005-05-19 2006-03-31 半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN1866533A CN1866533A (zh) 2006-11-22
CN100521224C true CN100521224C (zh) 2009-07-29

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Family Applications (1)

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CNB2006100826407A Expired - Fee Related CN100521224C (zh) 2005-05-19 2006-05-19 半导体存储器件及其制造方法

Country Status (5)

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US (2) US20060266992A1 (enExample)
JP (2) JP2006352082A (enExample)
KR (1) KR20060120463A (enExample)
CN (1) CN100521224C (enExample)
TW (1) TW200711107A (enExample)

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KR100851548B1 (ko) * 2007-01-23 2008-08-11 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
JP2008288292A (ja) * 2007-05-16 2008-11-27 Renesas Technology Corp 半導体記憶装置及びその製造方法
US7888719B2 (en) * 2007-05-23 2011-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structures
US7593254B2 (en) 2007-05-25 2009-09-22 Micron Technology, Inc. Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
US8410607B2 (en) * 2007-06-15 2013-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structures
KR100891523B1 (ko) 2007-07-20 2009-04-06 주식회사 하이닉스반도체 상변화 기억 소자
KR100905420B1 (ko) 2007-08-06 2009-07-02 재단법인서울대학교산학협력재단 저항변화기록소자, 그 제조방법, 정보기록방법 및정보판독방법
JP5274799B2 (ja) * 2007-08-22 2013-08-28 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR20090026580A (ko) * 2007-09-10 2009-03-13 삼성전자주식회사 저항 메모리 소자 및 그 형성방법
JP2009135219A (ja) 2007-11-29 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
JP4532605B2 (ja) 2008-06-18 2010-08-25 キヤノンアネルバ株式会社 相変化メモリ素子、相変化メモリセル、真空処理装置及び相変化メモリ素子の製造方法
KR100960013B1 (ko) * 2008-07-24 2010-05-28 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
KR101019989B1 (ko) * 2008-10-21 2011-03-09 주식회사 하이닉스반도체 상변화 메모리 소자 및 그 제조방법
CN101814578B (zh) * 2009-02-20 2012-03-21 台湾积体电路制造股份有限公司 半导体元件及其制造方法
JPWO2010140210A1 (ja) * 2009-06-01 2012-11-15 株式会社日立製作所 半導体記憶装置およびその製造方法
US8138056B2 (en) 2009-07-03 2012-03-20 International Business Machines Corporation Thermally insulated phase change material memory cells with pillar structure
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US8105859B2 (en) * 2009-09-09 2012-01-31 International Business Machines Corporation In via formed phase change memory cell with recessed pillar heater
US8247789B2 (en) 2010-08-31 2012-08-21 Micron Technology, Inc. Memory cells and methods of forming memory cells
US8227785B2 (en) * 2010-11-11 2012-07-24 Micron Technology, Inc. Chalcogenide containing semiconductors with chalcogenide gradient
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101699713B1 (ko) 2011-09-14 2017-01-26 인텔 코포레이션 저항 변화 메모리 소자용 전극
JP2013175570A (ja) * 2012-02-24 2013-09-05 National Institute Of Advanced Industrial & Technology 半導体記憶装置およびその製造方法
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US9047938B2 (en) 2013-02-25 2015-06-02 International Business Machines Corporation Phase change memory management
US20150037613A1 (en) * 2013-07-30 2015-02-05 Seagate Technology Llc Magnetic devices with overcoats
KR101882604B1 (ko) 2014-05-12 2018-08-24 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 결정 배향층 적층 구조체, 전자 메모리 및 결정 배향층 적층 구조체의 제조 방법
KR20160049299A (ko) * 2014-10-27 2016-05-09 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
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CN108987362B (zh) * 2017-05-31 2020-10-16 华邦电子股份有限公司 内连线结构、其制造方法与半导体结构
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Also Published As

Publication number Publication date
US20060266992A1 (en) 2006-11-30
JP2006352082A (ja) 2006-12-28
JP2011091433A (ja) 2011-05-06
CN1866533A (zh) 2006-11-22
KR20060120463A (ko) 2006-11-27
US20110215288A1 (en) 2011-09-08
TW200711107A (en) 2007-03-16

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