JP2006352082A5 - - Google Patents

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Publication number
JP2006352082A5
JP2006352082A5 JP2006096616A JP2006096616A JP2006352082A5 JP 2006352082 A5 JP2006352082 A5 JP 2006352082A5 JP 2006096616 A JP2006096616 A JP 2006096616A JP 2006096616 A JP2006096616 A JP 2006096616A JP 2006352082 A5 JP2006352082 A5 JP 2006352082A5
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JP
Japan
Prior art keywords
memory device
semiconductor memory
phase change
plug
change material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006096616A
Other languages
English (en)
Japanese (ja)
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JP2006352082A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006096616A priority Critical patent/JP2006352082A/ja
Priority claimed from JP2006096616A external-priority patent/JP2006352082A/ja
Priority to TW095116726A priority patent/TW200711107A/zh
Priority to US11/435,934 priority patent/US20060266992A1/en
Priority to KR1020060044768A priority patent/KR20060120463A/ko
Priority to CNB2006100826407A priority patent/CN100521224C/zh
Publication of JP2006352082A publication Critical patent/JP2006352082A/ja
Publication of JP2006352082A5 publication Critical patent/JP2006352082A5/ja
Priority to JP2011000036A priority patent/JP2011091433A/ja
Priority to US13/108,174 priority patent/US20110215288A1/en
Pending legal-status Critical Current

Links

JP2006096616A 2005-05-19 2006-03-31 半導体記憶装置及びその製造方法 Pending JP2006352082A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006096616A JP2006352082A (ja) 2005-05-19 2006-03-31 半導体記憶装置及びその製造方法
TW095116726A TW200711107A (en) 2005-05-19 2006-05-11 Semiconductor storage device and manufacturing method thereof
US11/435,934 US20060266992A1 (en) 2005-05-19 2006-05-18 Semiconductor storage device and manufacturing method thereof
KR1020060044768A KR20060120463A (ko) 2005-05-19 2006-05-18 반도체기억장치 및 그 제조방법
CNB2006100826407A CN100521224C (zh) 2005-05-19 2006-05-19 半导体存储器件及其制造方法
JP2011000036A JP2011091433A (ja) 2005-05-19 2011-01-04 半導体記憶装置
US13/108,174 US20110215288A1 (en) 2005-05-19 2011-05-16 Semiconductor storage device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005146387 2005-05-19
JP2006096616A JP2006352082A (ja) 2005-05-19 2006-03-31 半導体記憶装置及びその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2011000036A Division JP2011091433A (ja) 2005-05-19 2011-01-04 半導体記憶装置
JP2011256247A Division JP2012064965A (ja) 2005-05-19 2011-11-24 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2006352082A JP2006352082A (ja) 2006-12-28
JP2006352082A5 true JP2006352082A5 (enExample) 2009-03-19

Family

ID=37462221

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006096616A Pending JP2006352082A (ja) 2005-05-19 2006-03-31 半導体記憶装置及びその製造方法
JP2011000036A Pending JP2011091433A (ja) 2005-05-19 2011-01-04 半導体記憶装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011000036A Pending JP2011091433A (ja) 2005-05-19 2011-01-04 半導体記憶装置

Country Status (5)

Country Link
US (2) US20060266992A1 (enExample)
JP (2) JP2006352082A (enExample)
KR (1) KR20060120463A (enExample)
CN (1) CN100521224C (enExample)
TW (1) TW200711107A (enExample)

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US7888719B2 (en) * 2007-05-23 2011-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structures
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US8410607B2 (en) * 2007-06-15 2013-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structures
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KR100905420B1 (ko) 2007-08-06 2009-07-02 재단법인서울대학교산학협력재단 저항변화기록소자, 그 제조방법, 정보기록방법 및정보판독방법
JP5274799B2 (ja) * 2007-08-22 2013-08-28 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR20090026580A (ko) * 2007-09-10 2009-03-13 삼성전자주식회사 저항 메모리 소자 및 그 형성방법
JP2009135219A (ja) 2007-11-29 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
JP4532605B2 (ja) 2008-06-18 2010-08-25 キヤノンアネルバ株式会社 相変化メモリ素子、相変化メモリセル、真空処理装置及び相変化メモリ素子の製造方法
KR100960013B1 (ko) * 2008-07-24 2010-05-28 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
KR101019989B1 (ko) * 2008-10-21 2011-03-09 주식회사 하이닉스반도체 상변화 메모리 소자 및 그 제조방법
CN101814578B (zh) * 2009-02-20 2012-03-21 台湾积体电路制造股份有限公司 半导体元件及其制造方法
JPWO2010140210A1 (ja) * 2009-06-01 2012-11-15 株式会社日立製作所 半導体記憶装置およびその製造方法
US8138056B2 (en) 2009-07-03 2012-03-20 International Business Machines Corporation Thermally insulated phase change material memory cells with pillar structure
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
US8105859B2 (en) * 2009-09-09 2012-01-31 International Business Machines Corporation In via formed phase change memory cell with recessed pillar heater
US8247789B2 (en) 2010-08-31 2012-08-21 Micron Technology, Inc. Memory cells and methods of forming memory cells
US8227785B2 (en) * 2010-11-11 2012-07-24 Micron Technology, Inc. Chalcogenide containing semiconductors with chalcogenide gradient
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101699713B1 (ko) 2011-09-14 2017-01-26 인텔 코포레이션 저항 변화 메모리 소자용 전극
JP2013175570A (ja) * 2012-02-24 2013-09-05 National Institute Of Advanced Industrial & Technology 半導体記憶装置およびその製造方法
US8729522B2 (en) 2012-10-23 2014-05-20 Micron Technology, Inc. Memory constructions comprising thin films of phase change material
US9047938B2 (en) 2013-02-25 2015-06-02 International Business Machines Corporation Phase change memory management
US20150037613A1 (en) * 2013-07-30 2015-02-05 Seagate Technology Llc Magnetic devices with overcoats
KR101882604B1 (ko) 2014-05-12 2018-08-24 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 결정 배향층 적층 구조체, 전자 메모리 및 결정 배향층 적층 구조체의 제조 방법
KR20160049299A (ko) * 2014-10-27 2016-05-09 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US10304482B2 (en) 2015-03-22 2019-05-28 Seagate Technology Llc Devices including an overcoat layer
KR102584288B1 (ko) * 2016-08-03 2023-09-27 삼성전자주식회사 비휘발성 메모리 장치
CN108987362B (zh) * 2017-05-31 2020-10-16 华邦电子股份有限公司 内连线结构、其制造方法与半导体结构
EP3707211A1 (en) 2017-11-07 2020-09-16 Masonite Corporation Articles made from lipophilic-rich cellulosic material and methods therefor
US10580976B2 (en) 2018-03-19 2020-03-03 Sandisk Technologies Llc Three-dimensional phase change memory device having a laterally constricted element and method of making the same
JP2020047743A (ja) 2018-09-18 2020-03-26 キオクシア株式会社 記憶装置
US11587978B2 (en) 2018-09-19 2023-02-21 International Business Machines Corporation Phase change memory with improved recovery from element segregation
JP2021040067A (ja) 2019-09-04 2021-03-11 キオクシア株式会社 半導体記憶装置
US11647683B2 (en) 2019-09-20 2023-05-09 International Business Machines Corporation Phase change memory cell with a thermal barrier layer
US11380843B2 (en) * 2020-02-13 2022-07-05 International Business Machines Corporation Phase change memory using multiple stacks of PCM materials

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US6818935B2 (en) * 2001-09-12 2004-11-16 Hynix Semiconductor Inc. Semiconductor device and method for fabricating the same
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US7262427B2 (en) * 2004-02-09 2007-08-28 Macronix International Co., Ltd. Structure for phase change memory and the method of forming same
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