TW200711003A - Method for fabricating low-defect-density changed orientation Si - Google Patents

Method for fabricating low-defect-density changed orientation Si

Info

Publication number
TW200711003A
TW200711003A TW095100292A TW95100292A TW200711003A TW 200711003 A TW200711003 A TW 200711003A TW 095100292 A TW095100292 A TW 095100292A TW 95100292 A TW95100292 A TW 95100292A TW 200711003 A TW200711003 A TW 200711003A
Authority
TW
Taiwan
Prior art keywords
orientation
density changed
atr
recrystallization
defect
Prior art date
Application number
TW095100292A
Other languages
English (en)
Inventor
Souza Joel Pereira De
Keith Edward Fogel
John Albrecht Ott
Devendra Kumar Sadana
Katherine Lynn Saenger
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200711003A publication Critical patent/TW200711003A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
TW095100292A 2005-01-07 2006-01-04 Method for fabricating low-defect-density changed orientation Si TW200711003A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/031,142 US7285473B2 (en) 2005-01-07 2005-01-07 Method for fabricating low-defect-density changed orientation Si

Publications (1)

Publication Number Publication Date
TW200711003A true TW200711003A (en) 2007-03-16

Family

ID=36653796

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100292A TW200711003A (en) 2005-01-07 2006-01-04 Method for fabricating low-defect-density changed orientation Si

Country Status (4)

Country Link
US (2) US7285473B2 (zh)
JP (1) JP5050185B2 (zh)
CN (1) CN100419135C (zh)
TW (1) TW200711003A (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8138061B2 (en) * 2005-01-07 2012-03-20 International Business Machines Corporation Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide
US7291539B2 (en) * 2005-06-01 2007-11-06 International Business Machines Corporation Amorphization/templated recrystallization method for hybrid orientation substrates
US20070215984A1 (en) * 2006-03-15 2007-09-20 Shaheen Mohamad A Formation of a multiple crystal orientation substrate
DE102006046363B4 (de) * 2006-09-29 2009-04-16 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Verringern von Kristalldefekten in Transistoren mit wieder aufgewachsenen flachen Übergängen durch geeignetes Auswählen von Kristallorientierungen
US7820501B2 (en) * 2006-10-11 2010-10-26 International Business Machines Corporation Decoder for a stationary switch machine
FR2907966B1 (fr) * 2006-10-27 2009-01-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat.
US20080128821A1 (en) * 2006-12-04 2008-06-05 Texas Instruments Incorporated Semiconductor Device Manufactured Using Passivation of Crystal Domain Interfaces in Hybrid Orientation Technology
JP5064841B2 (ja) * 2007-03-06 2012-10-31 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US7608522B2 (en) * 2007-03-11 2009-10-27 United Microelectronics Corp. Method for fabricating a hybrid orientation substrate
US9034102B2 (en) * 2007-03-29 2015-05-19 United Microelectronics Corp. Method of fabricating hybrid orientation substrate and structure of the same
US7537968B2 (en) * 2007-06-19 2009-05-26 Sandisk 3D Llc Junction diode with reduced reverse current
US7863712B2 (en) 2007-10-30 2011-01-04 International Business Machines Corporation Hybrid orientation semiconductor structure with reduced boundary defects and method of forming same
US7989329B2 (en) * 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
DE102008011931B4 (de) * 2008-02-29 2010-10-07 Advanced Micro Devices, Inc., Sunnyvale Verringerung der Speicherinstabilität durch lokale Anpassung der Rekristallisierungsbedingungen in einem Cache-Bereich eines Halbleiterbauelements
CN101593674B (zh) * 2008-05-26 2011-10-05 中芯国际集成电路制造(北京)有限公司 半导体衬底的形成方法以及太阳能电池的制作方法
JP2010072209A (ja) * 2008-09-17 2010-04-02 Fuji Xerox Co Ltd 静電荷像現像用トナー、静電荷像現像用トナーの製造方法、静電荷像現像用現像剤および画像形成装置
US8252609B2 (en) * 2009-04-09 2012-08-28 Texas Instruments Incorporated Curvature reduction for semiconductor wafers
US8564063B2 (en) 2010-12-07 2013-10-22 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
US20120190137A1 (en) * 2011-01-24 2012-07-26 Sumitomo Electric Industries, Ltd. Cross section observation method
CN103632956A (zh) * 2012-08-13 2014-03-12 上海华虹宏力半导体制造有限公司 防止半导体产品高温快速退火时产生缺陷的方法
CN106489187B (zh) * 2014-07-10 2019-10-25 株式会社希克斯 半导体基板和半导体基板的制造方法
CN108257917B (zh) * 2016-12-28 2021-02-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
US4240843A (en) * 1978-05-23 1980-12-23 Western Electric Company, Inc. Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing
JPS60154548A (ja) * 1984-01-24 1985-08-14 Fujitsu Ltd 半導体装置の製造方法
JPH0810669B2 (ja) * 1986-04-11 1996-01-31 日本電気株式会社 Ｓｏｉ膜の形成方法
JPS63137412A (ja) * 1986-11-29 1988-06-09 Sharp Corp 半導体用基板の製造方法
JP2560716B2 (ja) * 1987-03-25 1996-12-04 株式会社日本自動車部品総合研究所 半導体素子及びその製造方法
JPS63311718A (ja) * 1987-06-15 1988-12-20 Hitachi Ltd ヘテロ構造単結晶半導体薄膜の製造方法
JPS6445166A (en) * 1987-08-14 1989-02-17 Toshiba Corp Manufacture of semiconductor device
JPH01162362A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置の製造方法
JPH04188612A (ja) * 1990-11-19 1992-07-07 Canon Inc 結晶成長方法及び該方法によって得られた結晶物品
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices
JPH07288228A (ja) * 1994-02-23 1995-10-31 Ricoh Co Ltd 多結晶シリコン薄膜の形成方法
JP3545061B2 (ja) * 1994-09-22 2004-07-21 ソニー株式会社 配向性膜の形成方法
JPH08148424A (ja) * 1994-11-18 1996-06-07 Yamaha Corp 半導体装置の製造方法
JP2755214B2 (ja) * 1995-06-12 1998-05-20 ソニー株式会社 半導体薄膜の形成方法
US6399458B1 (en) * 1999-09-21 2002-06-04 International Business Machines Corporation Optimized reachthrough implant for simultaneously forming an MOS capacitor
US6404038B1 (en) * 2000-03-02 2002-06-11 The United States Of America As Represented By The Secretary Of The Navy Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors
US6793731B2 (en) * 2002-03-13 2004-09-21 Sharp Laboratories Of America, Inc. Method for recrystallizing an amorphized silicon germanium film overlying silicon
US6902962B2 (en) * 2003-04-04 2005-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon-on-insulator chip with multiple crystal orientations
US7329923B2 (en) * 2003-06-17 2008-02-12 International Business Machines Corporation High-performance CMOS devices on hybrid crystal oriented substrates
US20050116290A1 (en) * 2003-12-02 2005-06-02 De Souza Joel P. Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers
US8138061B2 (en) 2005-01-07 2012-03-20 International Business Machines Corporation Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide

Also Published As

Publication number Publication date
CN1818155A (zh) 2006-08-16
CN100419135C (zh) 2008-09-17
US20060154429A1 (en) 2006-07-13
JP2006191028A (ja) 2006-07-20
US7285473B2 (en) 2007-10-23
JP5050185B2 (ja) 2012-10-17
US7550369B2 (en) 2009-06-23
US20080057684A1 (en) 2008-03-06

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