TW200706666A - High-purity hafnium, target and thin film comprising high-purity hafnium, and process for producing high-purity hafnium - Google Patents
High-purity hafnium, target and thin film comprising high-purity hafnium, and process for producing high-purity hafniumInfo
- Publication number
- TW200706666A TW200706666A TW095122453A TW95122453A TW200706666A TW 200706666 A TW200706666 A TW 200706666A TW 095122453 A TW095122453 A TW 095122453A TW 95122453 A TW95122453 A TW 95122453A TW 200706666 A TW200706666 A TW 200706666A
- Authority
- TW
- Taiwan
- Prior art keywords
- contents
- purity hafnium
- hafnium
- purity
- impurities
- Prior art date
Links
- 229910052735 hafnium Inorganic materials 0.000 title abstract 9
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 title abstract 9
- 238000000034 method Methods 0.000 title abstract 4
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052776 Thorium Inorganic materials 0.000 abstract 1
- 229910052770 Uranium Inorganic materials 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 238000005477 sputtering target Methods 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/02—Use of electric or magnetic effects
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/10—Obtaining titanium, zirconium or hafnium
- C22B34/14—Obtaining zirconium or hafnium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/16—Remelting metals
- C22B9/22—Remelting metals with heating by wave energy or particle radiation
- C22B9/228—Remelting metals with heating by wave energy or particle radiation by particle radiation, e.g. electron beams
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/10—Obtaining titanium, zirconium or hafnium
- C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
- C22B34/1295—Refining, melting, remelting, working up of titanium
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Electrolytic Production Of Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005198901 | 2005-07-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200706666A true TW200706666A (en) | 2007-02-16 |
TWI356852B TWI356852B (zh) | 2012-01-21 |
Family
ID=37636897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095122453A TW200706666A (en) | 2005-07-07 | 2006-06-22 | High-purity hafnium, target and thin film comprising high-purity hafnium, and process for producing high-purity hafnium |
Country Status (8)
Country | Link |
---|---|
US (1) | US8277723B2 (zh) |
EP (1) | EP1930451B9 (zh) |
JP (1) | JP5032316B2 (zh) |
KR (1) | KR100968396B1 (zh) |
CN (1) | CN101218360B (zh) |
DE (1) | DE602006019454D1 (zh) |
TW (1) | TW200706666A (zh) |
WO (1) | WO2007007498A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE602004027052D1 (de) * | 2003-07-25 | 2010-06-17 | Nikko Materials Co Ltd | Hochreines hafniummaterial, targetdünnfilm daraus und verfahren zur herstellung von hochreinem hafnium |
EP2017360B1 (en) * | 2003-11-19 | 2012-08-08 | JX Nippon Mining & Metals Corporation | High purity hafnium, high purity hafnium target and method of manufacturing a thin film using high purity hafnium |
US7871942B2 (en) * | 2008-03-27 | 2011-01-18 | Applied Materials, Inc. | Methods for manufacturing high dielectric constant film |
EP2929960B1 (en) * | 2012-12-06 | 2017-11-29 | Senju Metal Industry Co., Ltd | Copper ball |
CN104096847A (zh) * | 2013-04-03 | 2014-10-15 | 北京有色金属研究总院 | 一种低氧、大尺寸高纯铪粉的制备方法 |
US9553160B2 (en) * | 2013-10-09 | 2017-01-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for monitoring impurity in high-K dielectric film |
RU2687113C2 (ru) | 2014-06-30 | 2019-05-07 | Тохо Титаниум Ко., Лтд. | Способ получения металла и способ получения тугоплавкого металла |
CN108611502B (zh) * | 2018-04-12 | 2020-07-31 | 北京金铂宇金属科技有限公司 | 一种降低镁还原法制备海绵铪中氧含量的方法 |
CN113584446A (zh) * | 2021-07-23 | 2021-11-02 | 中国科学院半导体研究所 | 利用磁控溅射在硅衬底上制备的金属铪薄膜、方法和应用 |
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US2782116A (en) | 1946-09-06 | 1957-02-19 | Frank H Spedding | Method of preparing metals from their halides |
GB771144A (en) * | 1954-04-16 | 1957-03-27 | Nat Lead Co | Improvements in or relating to the purification of zirconium tetrachloride |
US2837478A (en) * | 1954-12-17 | 1958-06-03 | Norton Co | Apparatus for the production of metal |
DE1152268B (de) * | 1960-12-28 | 1963-08-01 | Euratom | Rotationskathode fuer die Schmelzflusselektrolyse zur Abscheidung von hochschmelzenden Metallen, insbesondere Tantal |
EP0134643A3 (en) | 1983-07-08 | 1986-12-30 | Solex Research Corporation of Japan | Preparing metallic zirconium, hafnium or titanium |
JPS6017027A (ja) | 1983-07-08 | 1985-01-28 | Nishimura Watanabe Chiyuushiyutsu Kenkyusho:Kk | 金属ジルコニウム及び金属ハフニウムの製造方法 |
AU3898785A (en) | 1984-02-22 | 1985-08-29 | Iron Ore Co. Of Canada | Recovery of zirconium (and the like) by solvent extraction |
JPS61242993A (ja) | 1985-04-19 | 1986-10-29 | Toshiba Corp | クリスタルバ−ハフニウム製造用装置 |
US4637831A (en) | 1985-05-30 | 1987-01-20 | Westinghouse Electric Corp. | Process for reduction of zirconium, hafnium or titanium using a zinc or tin seal |
US4668287A (en) | 1985-09-26 | 1987-05-26 | Westinghouse Electric Corp. | Process for producing high purity zirconium and hafnium |
US4897116A (en) | 1988-05-25 | 1990-01-30 | Teledyne Industries, Inc. | High purity Zr and Hf metals and their manufacture |
KR940008936B1 (ko) * | 1990-02-15 | 1994-09-28 | 가부시끼가이샤 도시바 | 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법 |
JP2921799B2 (ja) * | 1990-02-15 | 1999-07-19 | 株式会社 東芝 | 半導体素子形成用高純度スパッタターゲットの製造方法 |
US5112493A (en) | 1990-12-10 | 1992-05-12 | Westinghouse Electric Corp. | Zirconium-hafnium production in a zero liquid discharge process |
JP2794382B2 (ja) | 1993-05-07 | 1998-09-03 | 株式会社ジャパンエナジー | スパッタリング用シリサイドターゲット及びその製造方法 |
WO1995004167A1 (fr) | 1993-07-27 | 1995-02-09 | Kabushiki Kaisha Toshiba | Cible en siliciure metallique a point de fusion eleve, son procede de production, couche en siliciure metallique a point de fusion eleve, et dispositif a semi-conducteurs |
JPH07316681A (ja) * | 1994-05-25 | 1995-12-05 | Japan Energy Corp | 金属材料又は合金材料の製造方法及び精製剤、並びに耐食性に優れた金属材料又は合金材料 |
JP3674732B2 (ja) | 1997-01-22 | 2005-07-20 | 同和鉱業株式会社 | ジルコニウムおよび/またはハフニウム化合物の精製方法 |
US6309595B1 (en) | 1997-04-30 | 2001-10-30 | The Altalgroup, Inc | Titanium crystal and titanium |
US20030052000A1 (en) | 1997-07-11 | 2003-03-20 | Vladimir Segal | Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method |
JP4501250B2 (ja) | 2000-06-19 | 2010-07-14 | 日鉱金属株式会社 | 耐脆化性に優れたゲート酸化膜形成用シリサイドターゲット |
JP3566641B2 (ja) | 2000-09-11 | 2004-09-15 | 住友チタニウム株式会社 | 高融点活性金属製造用真空排気装置の真空排気方法 |
EP1743949B1 (en) | 2000-10-02 | 2012-02-15 | JX Nippon Mining & Metals Corporation | High-purity zirconium or hafnium metal for sputter targets and thin film applications |
JP4104039B2 (ja) * | 2000-10-02 | 2008-06-18 | 日鉱金属株式会社 | 高純度ジルコニウム又はハフニウムの製造方法 |
JP2002206103A (ja) * | 2000-11-09 | 2002-07-26 | Nikko Materials Co Ltd | 高純度ジルコニウム若しくはハフニウム粉の製造方法 |
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JP3995082B2 (ja) | 2001-07-18 | 2007-10-24 | 日鉱金属株式会社 | ゲート酸化膜形成用ハフニウムシリサイドターゲット及びその製造方法 |
US6737030B2 (en) | 2002-01-29 | 2004-05-18 | Ati Properties, Inc. | Method for separating hafnium from zirconium |
EP1528120B1 (en) | 2002-08-06 | 2011-04-13 | Nippon Mining & Metals Co., Ltd. | Hafnium silicide target and method for preparation thereof |
CN100445420C (zh) | 2003-03-07 | 2008-12-24 | 日矿金属株式会社 | 铪合金靶及其制造方法 |
JP2005045166A (ja) * | 2003-07-25 | 2005-02-17 | Toshiba Corp | 半導体装置及びその製造方法 |
DE602004027052D1 (de) * | 2003-07-25 | 2010-06-17 | Nikko Materials Co Ltd | Hochreines hafniummaterial, targetdünnfilm daraus und verfahren zur herstellung von hochreinem hafnium |
EP2017360B1 (en) * | 2003-11-19 | 2012-08-08 | JX Nippon Mining & Metals Corporation | High purity hafnium, high purity hafnium target and method of manufacturing a thin film using high purity hafnium |
US20060062910A1 (en) | 2004-03-01 | 2006-03-23 | Meiere Scott H | Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof |
JP2006037133A (ja) * | 2004-07-23 | 2006-02-09 | Toho Titanium Co Ltd | 高純度ハフニウム材の製造方法及びこの方法により得られた高純度ハフニウム材、並びにスパッタリングターゲット |
-
2006
- 2006-06-12 JP JP2007524546A patent/JP5032316B2/ja active Active
- 2006-06-12 CN CN2006800247262A patent/CN101218360B/zh active Active
- 2006-06-12 KR KR1020087000215A patent/KR100968396B1/ko active IP Right Grant
- 2006-06-12 WO PCT/JP2006/311722 patent/WO2007007498A1/ja active Application Filing
- 2006-06-12 DE DE602006019454T patent/DE602006019454D1/de active Active
- 2006-06-12 US US11/994,167 patent/US8277723B2/en active Active
- 2006-06-12 EP EP06766584A patent/EP1930451B9/en active Active
- 2006-06-22 TW TW095122453A patent/TW200706666A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TWI356852B (zh) | 2012-01-21 |
US20090226341A1 (en) | 2009-09-10 |
EP1930451A1 (en) | 2008-06-11 |
KR20080017439A (ko) | 2008-02-26 |
EP1930451B9 (en) | 2011-10-26 |
JP5032316B2 (ja) | 2012-09-26 |
CN101218360A (zh) | 2008-07-09 |
WO2007007498A1 (ja) | 2007-01-18 |
EP1930451B1 (en) | 2011-01-05 |
JPWO2007007498A1 (ja) | 2009-01-29 |
EP1930451A4 (en) | 2009-08-19 |
DE602006019454D1 (de) | 2011-02-17 |
US8277723B2 (en) | 2012-10-02 |
KR100968396B1 (ko) | 2010-07-07 |
CN101218360B (zh) | 2010-06-16 |
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