DE602004027052D1 - Hochreines hafniummaterial, targetdünnfilm daraus und verfahren zur herstellung von hochreinem hafnium - Google Patents
Hochreines hafniummaterial, targetdünnfilm daraus und verfahren zur herstellung von hochreinem hafniumInfo
- Publication number
- DE602004027052D1 DE602004027052D1 DE602004027052T DE602004027052T DE602004027052D1 DE 602004027052 D1 DE602004027052 D1 DE 602004027052D1 DE 602004027052 T DE602004027052 T DE 602004027052T DE 602004027052 T DE602004027052 T DE 602004027052T DE 602004027052 D1 DE602004027052 D1 DE 602004027052D1
- Authority
- DE
- Germany
- Prior art keywords
- purity hafnium
- production
- thin film
- target thin
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052735 hafnium Inorganic materials 0.000 title 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 title 2
- 239000000463 material Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B1/00—Preliminary treatment of ores or scrap
- C22B1/02—Roasting processes
- C22B1/08—Chloridising roasting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B3/00—Extraction of metal compounds from ores or concentrates by wet processes
- C22B3/20—Treatment or purification of solutions, e.g. obtained by leaching
- C22B3/26—Treatment or purification of solutions, e.g. obtained by leaching by liquid-liquid extraction using organic compounds
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/10—Obtaining titanium, zirconium or hafnium
- C22B34/14—Obtaining zirconium or hafnium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/16—Remelting metals
- C22B9/22—Remelting metals with heating by wave energy or particle radiation
- C22B9/228—Remelting metals with heating by wave energy or particle radiation by particle radiation, e.g. electron beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003279695 | 2003-07-25 | ||
PCT/JP2004/005389 WO2005010220A1 (ja) | 2003-07-25 | 2004-04-15 | 高純度ハフニウム材料、同材料からなるターゲット及び薄膜並びに高純度ハフニウムの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004027052D1 true DE602004027052D1 (de) | 2010-06-17 |
Family
ID=34100826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004027052T Expired - Lifetime DE602004027052D1 (de) | 2003-07-25 | 2004-04-15 | Hochreines hafniummaterial, targetdünnfilm daraus und verfahren zur herstellung von hochreinem hafnium |
Country Status (8)
Country | Link |
---|---|
US (2) | US7964070B2 (de) |
EP (1) | EP1652944B1 (de) |
JP (2) | JP4519773B2 (de) |
KR (2) | KR100749653B1 (de) |
CN (1) | CN100376696C (de) |
DE (1) | DE602004027052D1 (de) |
TW (1) | TWI271441B (de) |
WO (1) | WO2005010220A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3995082B2 (ja) * | 2001-07-18 | 2007-10-24 | 日鉱金属株式会社 | ゲート酸化膜形成用ハフニウムシリサイドターゲット及びその製造方法 |
KR100698744B1 (ko) * | 2003-03-07 | 2007-03-23 | 닛코킨조쿠 가부시키가이샤 | 하프늄 합금 타겟트 및 그 제조방법 |
KR100749653B1 (ko) * | 2003-07-25 | 2007-08-14 | 닛코킨조쿠 가부시키가이샤 | 고순도 하프늄 재료, 이 재료로 이루어진 타겟트 및 박막과고순도 하프늄의 제조방법 |
KR100766275B1 (ko) * | 2003-11-19 | 2007-10-15 | 닛코킨조쿠 가부시키가이샤 | 고순도 하프늄, 동 고순도 하프늄으로 이루어진 타겟트 및박막과 고순도 하프늄의 제조방법 |
US20060062910A1 (en) * | 2004-03-01 | 2006-03-23 | Meiere Scott H | Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof |
US20050214458A1 (en) * | 2004-03-01 | 2005-09-29 | Meiere Scott H | Low zirconium hafnium halide compositions |
CN101218360B (zh) * | 2005-07-07 | 2010-06-16 | 日矿金属株式会社 | 高纯度铪及其制造方法、由高纯度铪构成的靶及薄膜 |
WO2008110551A1 (en) | 2007-03-12 | 2008-09-18 | Zadec Aps | An anti-diabetic extract of rooibos |
CN101864559B (zh) * | 2010-04-26 | 2012-07-04 | 南京三乐电子信息产业集团有限公司 | 一种栅网磁控溅射蒸铪的方法 |
CN103725901B (zh) * | 2013-12-12 | 2015-10-28 | 上海哈峰新材料科技有限公司 | 氧化锆/氧化铪混合物的火法分离方法 |
JP6126648B2 (ja) * | 2015-06-26 | 2017-05-10 | 田中貴金属工業株式会社 | 白金合金ターゲット |
CN106698512A (zh) * | 2016-11-22 | 2017-05-24 | 郑旭 | 一种四氯化铪的制备方法 |
CN108611502B (zh) * | 2018-04-12 | 2020-07-31 | 北京金铂宇金属科技有限公司 | 一种降低镁还原法制备海绵铪中氧含量的方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2782116A (en) * | 1946-09-06 | 1957-02-19 | Frank H Spedding | Method of preparing metals from their halides |
EP0134643A3 (de) | 1983-07-08 | 1986-12-30 | Solex Research Corporation of Japan | Verfahren zur Herstellung von metallischem Zirkon, Hafnium oder Titan |
AU3898785A (en) | 1984-02-22 | 1985-08-29 | Iron Ore Co. Of Canada | Recovery of zirconium (and the like) by solvent extraction |
US4637831A (en) * | 1985-05-30 | 1987-01-20 | Westinghouse Electric Corp. | Process for reduction of zirconium, hafnium or titanium using a zinc or tin seal |
US4668287A (en) | 1985-09-26 | 1987-05-26 | Westinghouse Electric Corp. | Process for producing high purity zirconium and hafnium |
JPH0723526B2 (ja) * | 1986-01-13 | 1995-03-15 | 株式会社日立製作所 | 耐食ハフニウム基体およびその製造方法 |
US4897116A (en) * | 1988-05-25 | 1990-01-30 | Teledyne Industries, Inc. | High purity Zr and Hf metals and their manufacture |
US5160482A (en) * | 1989-03-02 | 1992-11-03 | Teledyne Industries, Inc. | Zirconium-hafnium separation and purification process |
KR940008936B1 (ko) * | 1990-02-15 | 1994-09-28 | 가부시끼가이샤 도시바 | 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법 |
US5112493A (en) * | 1990-12-10 | 1992-05-12 | Westinghouse Electric Corp. | Zirconium-hafnium production in a zero liquid discharge process |
WO1994012435A1 (en) * | 1992-11-20 | 1994-06-09 | Teledyne Industries, Inc. | Process for making solutions containing basic zirconium and hafnium chlorides |
JP2794382B2 (ja) * | 1993-05-07 | 1998-09-03 | 株式会社ジャパンエナジー | スパッタリング用シリサイドターゲット及びその製造方法 |
EP0666336B1 (de) * | 1993-07-27 | 2001-10-17 | Kabushiki Kaisha Toshiba | Verfahren zur herstellung eines hochschmelzenden metallischen silizidtargets |
JPH07316681A (ja) | 1994-05-25 | 1995-12-05 | Japan Energy Corp | 金属材料又は合金材料の製造方法及び精製剤、並びに耐食性に優れた金属材料又は合金材料 |
JP3674732B2 (ja) | 1997-01-22 | 2005-07-20 | 同和鉱業株式会社 | ジルコニウムおよび/またはハフニウム化合物の精製方法 |
JP3591756B2 (ja) * | 1997-04-04 | 2004-11-24 | 日本電信電話株式会社 | 金属フッ化物の製造方法 |
US6309595B1 (en) * | 1997-04-30 | 2001-10-30 | The Altalgroup, Inc | Titanium crystal and titanium |
US20030052000A1 (en) * | 1997-07-11 | 2003-03-20 | Vladimir Segal | Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method |
JP4501250B2 (ja) * | 2000-06-19 | 2010-07-14 | 日鉱金属株式会社 | 耐脆化性に優れたゲート酸化膜形成用シリサイドターゲット |
JP4104039B2 (ja) * | 2000-10-02 | 2008-06-18 | 日鉱金属株式会社 | 高純度ジルコニウム又はハフニウムの製造方法 |
DE60130477T2 (de) * | 2000-10-02 | 2008-01-03 | Nippon Mining & Metals Co., Ltd. | Hochreines Zirkonium oder Hafnium, diese beinhaltendes Sputtering Target und mit diesesm hergestellte dünnen Filme, Verfahren zur Herstellung von hochreinem Zirkonium oder Hafnium und Herstellungsverfahren für Pulver aus hochreinem Zirkonium oder Hafnium |
JP4596379B2 (ja) * | 2001-07-09 | 2010-12-08 | Jx日鉱日石金属株式会社 | ゲート酸化膜形成用ハフニウムシリサイドターゲット |
JP3995082B2 (ja) * | 2001-07-18 | 2007-10-24 | 日鉱金属株式会社 | ゲート酸化膜形成用ハフニウムシリサイドターゲット及びその製造方法 |
US6472337B1 (en) * | 2001-10-30 | 2002-10-29 | Sharp Laboratories Of America, Inc. | Precursors for zirconium and hafnium oxide thin film deposition |
US6737030B2 (en) * | 2002-01-29 | 2004-05-18 | Ati Properties, Inc. | Method for separating hafnium from zirconium |
US6986834B2 (en) * | 2002-08-06 | 2006-01-17 | Nikko Materials Co., Ltd. | Hafnium silicide target and manufacturing method for preparation thereof |
KR100698744B1 (ko) * | 2003-03-07 | 2007-03-23 | 닛코킨조쿠 가부시키가이샤 | 하프늄 합금 타겟트 및 그 제조방법 |
KR100749653B1 (ko) * | 2003-07-25 | 2007-08-14 | 닛코킨조쿠 가부시키가이샤 | 고순도 하프늄 재료, 이 재료로 이루어진 타겟트 및 박막과고순도 하프늄의 제조방법 |
KR100766275B1 (ko) * | 2003-11-19 | 2007-10-15 | 닛코킨조쿠 가부시키가이샤 | 고순도 하프늄, 동 고순도 하프늄으로 이루어진 타겟트 및박막과 고순도 하프늄의 제조방법 |
US20060062910A1 (en) * | 2004-03-01 | 2006-03-23 | Meiere Scott H | Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof |
CN101218360B (zh) * | 2005-07-07 | 2010-06-16 | 日矿金属株式会社 | 高纯度铪及其制造方法、由高纯度铪构成的靶及薄膜 |
JP2008115063A (ja) * | 2006-11-06 | 2008-05-22 | Mitsuhide Kawasaki | 高純度ハフニウム材料および溶媒抽出法を用いた該材料の製造方法。 |
-
2004
- 2004-04-15 KR KR1020067001711A patent/KR100749653B1/ko not_active IP Right Cessation
- 2004-04-15 DE DE602004027052T patent/DE602004027052D1/de not_active Expired - Lifetime
- 2004-04-15 JP JP2005511975A patent/JP4519773B2/ja not_active Expired - Fee Related
- 2004-04-15 WO PCT/JP2004/005389 patent/WO2005010220A1/ja active Application Filing
- 2004-04-15 US US10/565,767 patent/US7964070B2/en not_active Expired - Fee Related
- 2004-04-15 KR KR1020077014503A patent/KR20070070263A/ko not_active Application Discontinuation
- 2004-04-15 CN CNB2004800215563A patent/CN100376696C/zh not_active Expired - Fee Related
- 2004-04-15 EP EP04727690A patent/EP1652944B1/de not_active Expired - Fee Related
- 2004-04-19 TW TW093110816A patent/TWI271441B/zh not_active IP Right Cessation
-
2009
- 2009-01-14 US US12/353,405 patent/US7674441B2/en not_active Expired - Fee Related
-
2010
- 2010-03-02 JP JP2010045504A patent/JP2010180480A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2005010220A1 (ja) | 2005-02-03 |
EP1652944A1 (de) | 2006-05-03 |
US7674441B2 (en) | 2010-03-09 |
KR20070070263A (ko) | 2007-07-03 |
JP2010180480A (ja) | 2010-08-19 |
EP1652944A4 (de) | 2007-05-23 |
KR100749653B1 (ko) | 2007-08-14 |
JP4519773B2 (ja) | 2010-08-04 |
CN1829807A (zh) | 2006-09-06 |
US20070018138A1 (en) | 2007-01-25 |
US20090126529A1 (en) | 2009-05-21 |
JPWO2005010220A1 (ja) | 2006-09-07 |
TW200504232A (en) | 2005-02-01 |
CN100376696C (zh) | 2008-03-26 |
KR20060026967A (ko) | 2006-03-24 |
TWI271441B (en) | 2007-01-21 |
US7964070B2 (en) | 2011-06-21 |
EP1652944B1 (de) | 2010-05-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
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