TW200705671A - Thin film transistor substrate and method of making the same - Google Patents

Thin film transistor substrate and method of making the same

Info

Publication number
TW200705671A
TW200705671A TW095120237A TW95120237A TW200705671A TW 200705671 A TW200705671 A TW 200705671A TW 095120237 A TW095120237 A TW 095120237A TW 95120237 A TW95120237 A TW 95120237A TW 200705671 A TW200705671 A TW 200705671A
Authority
TW
Taiwan
Prior art keywords
thin film
making
film transistor
transistor substrate
same
Prior art date
Application number
TW095120237A
Other languages
English (en)
Other versions
TWI334225B (en
Inventor
Yong-Uk Lee
Joon-Hak Oh
Bo-Sung Kim
Mun-Pyo Hong
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200705671A publication Critical patent/TW200705671A/zh
Application granted granted Critical
Publication of TWI334225B publication Critical patent/TWI334225B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW095120237A 2005-07-27 2006-06-07 Thin film transistor substrate and method of making the same TWI334225B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050068553A KR101209046B1 (ko) 2005-07-27 2005-07-27 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법

Publications (2)

Publication Number Publication Date
TW200705671A true TW200705671A (en) 2007-02-01
TWI334225B TWI334225B (en) 2010-12-01

Family

ID=37674424

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095120237A TWI334225B (en) 2005-07-27 2006-06-07 Thin film transistor substrate and method of making the same

Country Status (5)

Country Link
US (1) US7808044B2 (zh)
JP (1) JP5066347B2 (zh)
KR (1) KR101209046B1 (zh)
CN (1) CN1905233B (zh)
TW (1) TWI334225B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI574396B (zh) * 2010-12-14 2017-03-11 三星顯示器有限公司 有機發光顯示裝置及其製造方法

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901268B2 (en) * 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
KR20070053060A (ko) * 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
KR20080018576A (ko) * 2006-08-25 2008-02-28 삼성전자주식회사 유기 활성물의 접촉 구조 형성 방법 및 평판 표시 장치의제조 방법, 그리고 유기 박막 트랜지스터 표시판 및 유기발광 표시 장치
KR101363714B1 (ko) * 2006-12-11 2014-02-14 엘지디스플레이 주식회사 유기 박막트랜지스터, 그 제조 방법, 이를 이용한 정전기방지 소자, 액정표시장치 및 그 제조 방법
KR100886723B1 (ko) * 2007-02-20 2009-03-04 고려대학교 산학협력단 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터
KR101062108B1 (ko) * 2007-03-26 2011-09-02 파이오니아 가부시키가이샤 유기 반도체 소자 및 그 제조방법
GB2448174B (en) * 2007-04-04 2009-12-09 Cambridge Display Tech Ltd Organic thin film transistors
GB2450675A (en) * 2007-04-04 2009-01-07 Cambridge Display Tech Ltd Active matrix organic displays
KR101348025B1 (ko) * 2007-04-04 2014-01-06 삼성전자주식회사 박막 트랜지스터의 제조방법
WO2008131836A1 (en) * 2007-04-25 2008-11-06 Merck Patent Gmbh Process for preparing an electronic device
US8017940B2 (en) 2007-05-25 2011-09-13 Panasonic Corporation Organic transistor, method of forming organic transistor and organic EL display with organic transistor
JP2008298859A (ja) * 2007-05-29 2008-12-11 Asahi Glass Co Ltd 感光性組成物、それを用いた隔壁、隔壁の製造方法、カラーフィルタの製造方法、有機el表示素子の製造方法および有機tftアレイの製造方法
EP2077698B1 (en) 2007-05-31 2011-09-07 Panasonic Corporation Organic el device and method for manufacturing the same
JP4882873B2 (ja) * 2007-05-31 2012-02-22 パナソニック株式会社 有機elデバイス及び有機elディスプレイパネル
US20090014716A1 (en) * 2007-07-11 2009-01-15 Takumi Yamaga Organic thin-film transistor and method of manufacturing the same
JP5277675B2 (ja) * 2007-07-11 2013-08-28 株式会社リコー 有機薄膜トランジスタの製造方法
JP2009021477A (ja) * 2007-07-13 2009-01-29 Sony Corp 半導体装置およびその製造方法、ならびに表示装置およびその製造方法
KR101379616B1 (ko) * 2007-07-31 2014-03-31 삼성전자주식회사 계면특성이 향상된 유기박막트랜지스터 및 그의 제조방법
EP2178110A4 (en) 2007-08-07 2012-08-29 Panasonic Corp SEMICONDUCTOR COMPONENT, METHOD FOR THE PRODUCTION THEREOF AND PICTURE DISPLAY
WO2009019864A1 (ja) * 2007-08-07 2009-02-12 Panasonic Corporation 半導体装置とその製造方法および画像表示装置
GB2455747B (en) * 2007-12-19 2011-02-09 Cambridge Display Tech Ltd Electronic devices and methods of making the same using solution processing techniques
GB2458454B (en) 2008-03-14 2011-03-16 Cambridge Display Tech Ltd Electronic devices and methods of making the same using solution processing techniques
JP5325465B2 (ja) * 2008-06-03 2013-10-23 株式会社日立製作所 薄膜トランジスタおよびそれを用いた装置
JP4618337B2 (ja) 2008-06-17 2011-01-26 ソニー株式会社 表示装置およびその製造方法、ならびに半導体装置およびその製造方法
JP2010010296A (ja) 2008-06-25 2010-01-14 Ricoh Co Ltd 有機トランジスタアレイ及び表示装置
US8945981B2 (en) * 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010062276A (ja) * 2008-09-03 2010-03-18 Brother Ind Ltd 酸化物薄膜トランジスタ、及びその製造方法
US8420465B2 (en) 2008-11-19 2013-04-16 Konica Minolta Holdings, Inc. Organic thin film transistor manufacturing method and organic thin film transistor
WO2010104005A1 (ja) * 2009-03-13 2010-09-16 コニカミノルタホールディングス株式会社 薄膜トランジスタの製造方法、及び薄膜トランジスタ
KR101572081B1 (ko) 2009-04-22 2015-11-26 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
GB0921707D0 (en) * 2009-12-11 2010-01-27 Cambridge Display Tech Ltd Electronic devices
KR101079519B1 (ko) * 2009-12-21 2011-11-03 성균관대학교산학협력단 유기 박막 트랜지스터 및 그 제조방법
JP5493881B2 (ja) * 2010-01-07 2014-05-14 セイコーエプソン株式会社 電気光学装置用基板及びその製造方法、電気光学装置並びに電子機器
KR101108162B1 (ko) 2010-01-11 2012-01-31 서울대학교산학협력단 고해상도 유기 박막 패턴 형성 방법
EP2611842B1 (en) 2010-09-02 2015-11-04 Merck Patent GmbH Interlayer for electronic devices
JP5741832B2 (ja) * 2011-04-27 2015-07-01 大日本印刷株式会社 アクティブマトリックス基板及びアクティブマトリックス基板の製造方法、液晶表示装置
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP2013196919A (ja) * 2012-03-21 2013-09-30 Sony Corp 有機el表示装置、有機el表示装置の製造方法およびカラーフィルタ基板
EP2841483B1 (en) 2012-04-25 2018-10-03 Merck Patent GmbH Bank structures for organic electronic devices
EP2898551B1 (en) 2012-09-21 2020-04-22 Merck Patent GmbH Organic semiconductor formulations
WO2014072016A1 (en) 2012-11-08 2014-05-15 Merck Patent Gmbh Method for producing organic electronic devices with bank structures, bank structures and electronic devices produced therewith
JP6528517B2 (ja) * 2015-04-06 2019-06-12 三菱電機株式会社 配向膜の塗布方法
EP3194502A4 (en) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
CN107771358A (zh) 2015-06-12 2018-03-06 默克专利有限公司 具有含氟聚合物台架结构的有机电子器件
US9842883B2 (en) * 2016-01-28 2017-12-12 Shenzhen China Star Optoelectronics Technology Co., Ltd. Flexible array substrate structure and manufacturing method for the same
KR102471270B1 (ko) 2016-08-17 2022-11-25 메르크 파텐트 게엠베하 뱅크 구조들을 가진 전자 디바이스
CN109817096A (zh) * 2019-01-14 2019-05-28 深圳市德彩光电有限公司 一种柔性led显示屏及其制作方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3286152B2 (ja) * 1995-06-29 2002-05-27 シャープ株式会社 薄膜トランジスタ回路および画像表示装置
JP3572776B2 (ja) * 1996-02-07 2004-10-06 ソニー株式会社 誘電体材料および誘電体膜
TW416260B (en) * 1997-01-31 2000-12-21 Asahi Glass Co Ltd Electronic components having fluorine polymer thin film
JP3267271B2 (ja) 1998-12-10 2002-03-18 日本電気株式会社 液晶表示装置およびその製造法
JP2000269504A (ja) * 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
KR20010089334A (ko) 1999-08-24 2001-10-06 요트.게.아. 롤페즈 표시장치
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法
KR100403714B1 (ko) 2000-06-10 2003-11-01 씨씨알 주식회사 웹문서 레이아웃 이미지 및 웹사이트 구조를 제공하여인터넷 검색을 용이하게 할 수 있는 시스템 및 방법
GB0028877D0 (en) 2000-11-28 2001-01-10 Koninkl Philips Electronics Nv Liquid crystal displays
KR100857719B1 (ko) * 2001-03-26 2008-09-08 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
JP2003082042A (ja) 2001-09-07 2003-03-19 Jsr Corp 隔壁形成用感放射線性樹脂組成物、隔壁、および表示素子。
EP2204861A1 (en) * 2001-12-19 2010-07-07 Merck Patent GmbH Organic field effect transistor with an organic dielectric
GB0207134D0 (en) 2002-03-27 2002-05-08 Cambridge Display Tech Ltd Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained
JP4635410B2 (ja) * 2002-07-02 2011-02-23 ソニー株式会社 半導体装置及びその製造方法
US6821811B2 (en) 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
JP4618990B2 (ja) * 2002-08-02 2011-01-26 株式会社半導体エネルギー研究所 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置
JP4356309B2 (ja) * 2002-12-03 2009-11-04 セイコーエプソン株式会社 トランジスタ、集積回路、電気光学装置、電子機器
TW200413803A (en) * 2003-01-30 2004-08-01 Ind Tech Res Inst Organic transistor array substrate and its manufacturing method, and LCD including the organic transistor array substrate
JP2004363560A (ja) * 2003-05-09 2004-12-24 Seiko Epson Corp 基板、デバイス、デバイス製造方法、アクティブマトリクス基板の製造方法及び電気光学装置並びに電子機器
JP4997688B2 (ja) 2003-08-19 2012-08-08 セイコーエプソン株式会社 電極、薄膜トランジスタ、電子回路、表示装置および電子機器
JP2005101558A (ja) * 2003-08-28 2005-04-14 Seiko Epson Corp 半導体装置の製造方法、電子デバイスの製造方法、電子デバイス、及び表示装置
KR100973811B1 (ko) * 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
JP4415653B2 (ja) * 2003-11-19 2010-02-17 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP4281584B2 (ja) * 2004-03-04 2009-06-17 セイコーエプソン株式会社 半導体装置の製造方法
US7067841B2 (en) * 2004-04-22 2006-06-27 E. I. Du Pont De Nemours And Company Organic electronic devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI574396B (zh) * 2010-12-14 2017-03-11 三星顯示器有限公司 有機發光顯示裝置及其製造方法

Also Published As

Publication number Publication date
JP2007036259A (ja) 2007-02-08
US20070023837A1 (en) 2007-02-01
JP5066347B2 (ja) 2012-11-07
KR20070013888A (ko) 2007-01-31
CN1905233A (zh) 2007-01-31
US7808044B2 (en) 2010-10-05
KR101209046B1 (ko) 2012-12-06
CN1905233B (zh) 2010-10-27
TWI334225B (en) 2010-12-01

Similar Documents

Publication Publication Date Title
TW200705671A (en) Thin film transistor substrate and method of making the same
TW200735371A (en) Thin film transistor substrate and thin film transistor substrate manufacturing method
WO2006025609A3 (en) Thin film transistor and its manufacturing method
TW200610206A (en) Organic thin film transistor and substrate including the same
TW200715562A (en) Thin film transistor substrate and fabrication thereof
TW200730985A (en) Thin film transistor substrate and manufacturing method thereof
TW200715566A (en) Display device and method of manufacturing the same
TW200705668A (en) Thin film transistor substrate and manufacturing method thereof
WO2009011220A1 (ja) 半導体装置およびその製造方法、ならびに表示装置およびその製造方法
TW200721508A (en) Display device and manufacturing method thereof
TW200625646A (en) Field effect transistor and fabrication method thereof
TW200703656A (en) Organic thin film transistor array panel and manufacturing method thereof
TW200734780A (en) Display device and manufacturing method therefor
TW200727492A (en) Organic thin film transistor array panel
WO2008099528A1 (ja) 表示装置、表示装置の製造方法
TW200629568A (en) Thin film transistor array panel
TW200642081A (en) Thin film transistor and process thereof
TW200701464A (en) Switching device for a pixel electrode and methods for fabricating the same
TW200711140A (en) Thin film transistor substrate and method for fabricating the same
TW200629566A (en) Thin film transistor array panel and method of manufacturing the same
TW200711145A (en) Organic thin film transistor array panel and method for manufacturing the same
TW200629564A (en) Thin film transistor array panel
TW200745710A (en) Organic transistor and method for manufacturing the same
TW200644253A (en) Switching device for a pixel electrode and methods for fabricating the same
WO2008117647A1 (ja) 有機電界効果トランジスタ