WO2008117647A1 - 有機電界効果トランジスタ - Google Patents

有機電界効果トランジスタ Download PDF

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Publication number
WO2008117647A1
WO2008117647A1 PCT/JP2008/054070 JP2008054070W WO2008117647A1 WO 2008117647 A1 WO2008117647 A1 WO 2008117647A1 JP 2008054070 W JP2008054070 W JP 2008054070W WO 2008117647 A1 WO2008117647 A1 WO 2008117647A1
Authority
WO
WIPO (PCT)
Prior art keywords
field effect
effect transistor
organic field
semiconductor layer
compound
Prior art date
Application number
PCT/JP2008/054070
Other languages
English (en)
French (fr)
Inventor
Yoshiko Nakamura
Masato Ueda
Original Assignee
Sumitomo Chemical Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Company, Limited filed Critical Sumitomo Chemical Company, Limited
Priority to CN2008800093422A priority Critical patent/CN101641793B/zh
Priority to EP08721490A priority patent/EP2131400A1/en
Priority to US12/532,382 priority patent/US8013329B2/en
Publication of WO2008117647A1 publication Critical patent/WO2008117647A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/12—Copolymers
    • C08G2261/124—Copolymers alternating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
    • C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/316—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain bridged by heteroatoms, e.g. N, P, Si or B
    • C08G2261/3162—Arylamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
    • C08G2261/92—TFT applications

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)

Abstract

　ゲート電極２、ゲート絶縁層３、半導体層４、ソース電極７及びドレイン電極８を備える有機電界効果トランジスタであって、ソース電極７及びドレイン電極８はそれぞれ、導電層６及び６’、並びにアクセプター化合物からなる化合物層５及び５’から構成されており、化合物層５及び５’はそれぞれ、半導体層４に接して配置され、半導体層４は、イオン化ポテンシャルが５．０ｅＶ以上の高分子化合物を含有する有機電界効果トランジスタ。
PCT/JP2008/054070 2007-03-23 2008-03-06 有機電界効果トランジスタ WO2008117647A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800093422A CN101641793B (zh) 2007-03-23 2008-03-06 有机场效应晶体管
EP08721490A EP2131400A1 (en) 2007-03-23 2008-03-06 Organic field effect transistor
US12/532,382 US8013329B2 (en) 2007-03-23 2008-03-06 Organic field effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007077516 2007-03-23
JP2007-077516 2007-03-23

Publications (1)

Publication Number Publication Date
WO2008117647A1 true WO2008117647A1 (ja) 2008-10-02

Family

ID=39788383

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054070 WO2008117647A1 (ja) 2007-03-23 2008-03-06 有機電界効果トランジスタ

Country Status (7)

Country Link
US (1) US8013329B2 (ja)
EP (1) EP2131400A1 (ja)
JP (1) JP2008270734A (ja)
KR (1) KR20090128509A (ja)
CN (1) CN101641793B (ja)
TW (1) TWI450428B (ja)
WO (1) WO2008117647A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175571A (ja) * 2012-02-24 2013-09-05 National Institute For Materials Science 有機電界効果トランジスタ

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011060828A (ja) * 2009-09-07 2011-03-24 Kyushu Institute Of Technology 電界効果型有機トランジスタ及びその製造方法
JP6264090B2 (ja) * 2013-07-31 2018-01-24 株式会社リコー 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法
CN104332558A (zh) * 2014-09-04 2015-02-04 中国科学院化学研究所 一种有机单晶场效应晶体管及其制备方法
JP6658300B2 (ja) * 2016-05-20 2020-03-04 株式会社デンソー 有機トランジスタ
CN109270131A (zh) * 2018-09-17 2019-01-25 电子科技大学 一种嵌有小分子添加剂的otft氨气传感器及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777070A (en) 1997-10-23 1998-07-07 The Dow Chemical Company Process for preparing conjugated polymers
JP2003518332A (ja) * 1999-12-21 2003-06-03 プラスティック ロジック リミテッド インクジェットで作成された集積回路
JP2003192770A (ja) * 2001-08-17 2003-07-09 Merck Patent Gmbh モノ、オリゴおよびポリアルキリデンフルオレンおよびこれらの電荷移動材料としての使用
JP2004103905A (ja) * 2002-09-11 2004-04-02 Pioneer Electronic Corp 有機半導体素子
JP2005260192A (ja) * 2004-03-15 2005-09-22 Seiko Epson Corp 薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
JP2007019291A (ja) * 2005-07-08 2007-01-25 National Institute Of Advanced Industrial & Technology 有機半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69924155T2 (de) * 1999-02-04 2006-04-13 Dow Global Technologies, Inc., Midland Fluoren-copolymere und daraus hergestellte vorrichtungen
AT410506B (de) * 2000-01-14 2003-05-26 Blum Gmbh Julius Ausziehführungsgarnitur für schubladen
JP4554329B2 (ja) * 2004-06-02 2010-09-29 大日本印刷株式会社 有機電子デバイス、及び有機電子デバイスの製造方法
WO2006064776A1 (ja) * 2004-12-17 2006-06-22 Konica Minolta Holdings, Inc. 有機薄膜トランジスタの製造方法
US20060270066A1 (en) * 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777070A (en) 1997-10-23 1998-07-07 The Dow Chemical Company Process for preparing conjugated polymers
JP2003518332A (ja) * 1999-12-21 2003-06-03 プラスティック ロジック リミテッド インクジェットで作成された集積回路
JP2003192770A (ja) * 2001-08-17 2003-07-09 Merck Patent Gmbh モノ、オリゴおよびポリアルキリデンフルオレンおよびこれらの電荷移動材料としての使用
JP2004103905A (ja) * 2002-09-11 2004-04-02 Pioneer Electronic Corp 有機半導体素子
JP2005260192A (ja) * 2004-03-15 2005-09-22 Seiko Epson Corp 薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
JP2007019291A (ja) * 2005-07-08 2007-01-25 National Institute Of Advanced Industrial & Technology 有機半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Z. BAO ET AL., APPLIED PHYSICS LETTERS, vol. 69, 1996, pages 4108

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175571A (ja) * 2012-02-24 2013-09-05 National Institute For Materials Science 有機電界効果トランジスタ

Also Published As

Publication number Publication date
JP2008270734A (ja) 2008-11-06
CN101641793B (zh) 2012-05-30
US20100051921A1 (en) 2010-03-04
TW200903875A (en) 2009-01-16
TWI450428B (zh) 2014-08-21
US8013329B2 (en) 2011-09-06
EP2131400A1 (en) 2009-12-09
CN101641793A (zh) 2010-02-03
KR20090128509A (ko) 2009-12-15

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