WO2009011220A1 - 半導体装置およびその製造方法、ならびに表示装置およびその製造方法 - Google Patents

半導体装置およびその製造方法、ならびに表示装置およびその製造方法 Download PDF

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Publication number
WO2009011220A1
WO2009011220A1 PCT/JP2008/061919 JP2008061919W WO2009011220A1 WO 2009011220 A1 WO2009011220 A1 WO 2009011220A1 JP 2008061919 W JP2008061919 W JP 2008061919W WO 2009011220 A1 WO2009011220 A1 WO 2009011220A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor layer
semiconductor device
display device
manufacturing
device manufacturing
Prior art date
Application number
PCT/JP2008/061919
Other languages
English (en)
French (fr)
Inventor
Iwao Yagi
Original Assignee
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corporation filed Critical Sony Corporation
Priority to CN2008800235936A priority Critical patent/CN101689510B/zh
Priority to US12/667,972 priority patent/US8168983B2/en
Priority to EP08790782A priority patent/EP2169711A4/en
Publication of WO2009011220A1 publication Critical patent/WO2009011220A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

　半導体装置１９-1は、基板１上に設けられたソース電極３ｓおよびドレイン電極３ｄと、ソース電極３ｓおよびドレイン電極３ｄの端部とこれらの電極３ｓ－３ｄ間に達する第１開口５ａを備えて基板１上に設けられた絶縁性の隔壁５と、隔壁５の上部から成膜された半導体層７からなり、隔壁５上における半導体層７とは分断された状態で第１開口５ａの底部に設けられたチャネル部半導体層７ａと、チャネル部半導体層７ａを含む半導体層７上から全面に成膜されたゲート絶縁膜９と、チャネル部半導体層７ａ上に重ねる状態でゲート絶縁膜９上に設けられたゲート電極１１ａとを備える。
PCT/JP2008/061919 2007-07-13 2008-07-01 半導体装置およびその製造方法、ならびに表示装置およびその製造方法 WO2009011220A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800235936A CN101689510B (zh) 2007-07-13 2008-07-01 半导体装置及其制造方法、显示装置及其制造方法
US12/667,972 US8168983B2 (en) 2007-07-13 2008-07-01 Semiconductor device, method for manufacturing semiconductor device, display device, and method for manufacturing display device
EP08790782A EP2169711A4 (en) 2007-07-13 2008-07-01 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING DISPLAY DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-184172 2007-07-13
JP2007184172A JP2009021477A (ja) 2007-07-13 2007-07-13 半導体装置およびその製造方法、ならびに表示装置およびその製造方法

Publications (1)

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WO2009011220A1 true WO2009011220A1 (ja) 2009-01-22

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Country Status (7)

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US (1) US8168983B2 (ja)
EP (1) EP2169711A4 (ja)
JP (1) JP2009021477A (ja)
KR (1) KR20100032407A (ja)
CN (1) CN101689510B (ja)
TW (1) TWI385806B (ja)
WO (1) WO2009011220A1 (ja)

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* Cited by examiner, † Cited by third party
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US20110012097A1 (en) * 2008-03-17 2011-01-20 Sony Corporation Semiconductor device and display apparatus
CN110112145A (zh) * 2015-01-21 2019-08-09 群创光电股份有限公司 显示装置
US11008448B2 (en) 2014-12-23 2021-05-18 Bridgestone Americas Tire Operations, Llc Oil-containing rubber compositions and related methods

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JP5533050B2 (ja) * 2009-04-23 2014-06-25 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置、アクティブマトリクス装置、電気光学装置および電子機器
JP5502864B2 (ja) * 2009-07-01 2014-05-28 シャープ株式会社 アクティブマトリクス基板及び有機ｅｌ表示装置
KR101904811B1 (ko) 2009-07-24 2018-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101274719B1 (ko) * 2010-06-11 2013-06-25 엘지디스플레이 주식회사 박막트랜지스터 기판 및 그 제조 방법과 그를 가지는 평판 표시 소자
US9018704B2 (en) 2011-10-20 2015-04-28 Panasonic Corporation Thin-film transistor and method of manufacturing the same
TW201321871A (zh) * 2011-11-29 2013-06-01 Au Optronics Corp 顯示面板及其製作方法
KR102056864B1 (ko) * 2013-04-09 2019-12-18 삼성디스플레이 주식회사 미러 기능을 구비한 유기 발광 표시 장치
US9960256B2 (en) * 2014-05-20 2018-05-01 Globalfoundries Inc. Merged gate and source/drain contacts in a semiconductor device
TWI577000B (zh) * 2015-01-21 2017-04-01 群創光電股份有限公司 顯示裝置
CN105118929B (zh) * 2015-08-03 2018-01-02 京东方科技集团股份有限公司 电极结构和有机发光单元及其制造方法
CN105206678A (zh) * 2015-10-29 2015-12-30 京东方科技集团股份有限公司 薄膜晶体管及阵列基板的制作方法
CN105655257A (zh) * 2016-01-13 2016-06-08 深圳市华星光电技术有限公司 薄膜晶体管结构的制造方法
TWI607595B (zh) * 2016-07-22 2017-12-01 元太科技工業股份有限公司 電子元件封裝體
CN107644937B (zh) * 2016-07-22 2021-06-15 元太科技工业股份有限公司 电子组件封装体
JP6980498B2 (ja) 2017-11-22 2021-12-15 株式会社ジャパンディスプレイ 表示装置
EP3660907B1 (en) * 2018-11-28 2023-03-22 Samsung Display Co., Ltd. Display device

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110012097A1 (en) * 2008-03-17 2011-01-20 Sony Corporation Semiconductor device and display apparatus
US8569745B2 (en) * 2008-03-17 2013-10-29 Sony Corporation Semiconductor device and display apparatus
US11008448B2 (en) 2014-12-23 2021-05-18 Bridgestone Americas Tire Operations, Llc Oil-containing rubber compositions and related methods
US11674020B2 (en) 2014-12-23 2023-06-13 Bridgestone Americas Tire Operations, Llc Oil-containing rubber compositions and related methods
CN110112145A (zh) * 2015-01-21 2019-08-09 群创光电股份有限公司 显示装置
CN110112145B (zh) * 2015-01-21 2023-08-29 群创光电股份有限公司 显示装置

Also Published As

Publication number Publication date
EP2169711A1 (en) 2010-03-31
US20110012198A1 (en) 2011-01-20
TWI385806B (zh) 2013-02-11
TW200917490A (en) 2009-04-16
CN101689510A (zh) 2010-03-31
US8168983B2 (en) 2012-05-01
KR20100032407A (ko) 2010-03-25
JP2009021477A (ja) 2009-01-29
CN101689510B (zh) 2012-07-04
EP2169711A4 (en) 2011-11-23

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