TW200705646A - Shared contact structure, semiconductor device and method of fabricating the semiconductor device - Google Patents

Shared contact structure, semiconductor device and method of fabricating the semiconductor device

Info

Publication number
TW200705646A
TW200705646A TW095110011A TW95110011A TW200705646A TW 200705646 A TW200705646 A TW 200705646A TW 095110011 A TW095110011 A TW 095110011A TW 95110011 A TW95110011 A TW 95110011A TW 200705646 A TW200705646 A TW 200705646A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
shared contact
contact structure
fabricating
sidewall
Prior art date
Application number
TW095110011A
Other languages
English (en)
Other versions
TWI297208B (en
Inventor
Abraham Yoo
Hee-Sung Kang
Heon-Jong Shin
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200705646A publication Critical patent/TW200705646A/zh
Application granted granted Critical
Publication of TWI297208B publication Critical patent/TWI297208B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
TW095110011A 2005-07-25 2006-03-23 Shared contact structure, semiconductor device and method of fabricating the semiconductor device TWI297208B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050067427A KR100724565B1 (ko) 2005-07-25 2005-07-25 코너보호패턴을 갖는 공유콘택구조, 반도체소자, 및 그제조방법들

Publications (2)

Publication Number Publication Date
TW200705646A true TW200705646A (en) 2007-02-01
TWI297208B TWI297208B (en) 2008-05-21

Family

ID=37678294

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095110011A TWI297208B (en) 2005-07-25 2006-03-23 Shared contact structure, semiconductor device and method of fabricating the semiconductor device

Country Status (3)

Country Link
US (2) US7781282B2 (zh)
KR (1) KR100724565B1 (zh)
TW (1) TWI297208B (zh)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598134B2 (en) 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
JP4503627B2 (ja) * 2007-03-29 2010-07-14 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
US8485411B2 (en) * 2007-05-16 2013-07-16 The Invention Science Fund I, Llc Gentle touch surgical stapler
JP2009111200A (ja) * 2007-10-31 2009-05-21 Panasonic Corp 半導体装置及びその製造方法
KR101376260B1 (ko) * 2008-04-14 2014-03-20 삼성전자 주식회사 반도체 소자 및 그 제조 방법
JP2010021296A (ja) * 2008-07-10 2010-01-28 Panasonic Corp 半導体装置の製造方法
US20110012267A1 (en) * 2009-07-17 2011-01-20 Stmicroelectronics S.R.L. Semiconductor integrated device having a contact structure, and corresponding manufacturing process
US8431995B2 (en) * 2010-05-13 2013-04-30 International Business Machines Corporation Methodology for fabricating isotropically recessed drain regions of CMOS transistors
US8716798B2 (en) 2010-05-13 2014-05-06 International Business Machines Corporation Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors
US8455952B2 (en) 2010-11-22 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer elements for semiconductor device
KR101718794B1 (ko) * 2010-12-16 2017-03-23 삼성전자주식회사 반도체 소자의 제조 방법
US8421160B2 (en) * 2011-02-25 2013-04-16 International Business Machines Corporation Structure and method to enabling a borderless contact to source regions and drain regions of a complementary metal oxide semiconductor (CMOS) transistor
US8659090B2 (en) * 2011-12-22 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Resistive memory and methods for forming the same
CN102593058A (zh) * 2012-02-28 2012-07-18 上海华力微电子有限公司 Sram单元的制备法
CN102543857A (zh) * 2012-02-28 2012-07-04 上海华力微电子有限公司 Sram共享接触孔的形成方法
KR102003959B1 (ko) 2012-07-31 2019-07-25 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
US8728927B1 (en) 2012-12-10 2014-05-20 International Business Machines Corporation Borderless contacts for semiconductor transistors
US8884344B2 (en) 2013-03-08 2014-11-11 International Business Machines Corporation Self-aligned contacts for replacement metal gate transistors
US20140273387A1 (en) * 2013-03-15 2014-09-18 Chien-Sheng Su Method Of Making High-Voltage MOS Transistors With Thin Poly Gate
US9171927B2 (en) * 2013-03-26 2015-10-27 GlobalFoundries, Inc. Spacer replacement for replacement metal gate semiconductor devices
CN104143530B (zh) * 2013-05-09 2017-12-01 中芯国际集成电路制造(上海)有限公司 晶体管及其制作方法
CN104347417B (zh) * 2013-08-05 2018-01-02 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
US9728505B2 (en) * 2015-11-16 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and structrues of novel contact feature
US10510851B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure
US10453741B2 (en) * 2016-12-13 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device contact
US10510600B1 (en) 2018-07-11 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Shared contact structure and methods for forming the same
TWI685085B (zh) * 2019-02-26 2020-02-11 華邦電子股份有限公司 記憶元件及其製造方法
CN113903665A (zh) * 2020-07-06 2022-01-07 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN115547936B (zh) * 2022-12-02 2023-06-16 合肥晶合集成电路股份有限公司 半导体结构的制作方法
CN116544180B (zh) * 2023-07-03 2023-09-19 合肥晶合集成电路股份有限公司 一种半导体结构的制作方法
CN117276202B (zh) * 2023-11-16 2024-02-20 合肥晶合集成电路股份有限公司 接触孔的形成方法及半导体结构

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW307046B (en) 1996-01-30 1997-06-01 Taiwan Semiconductor Mfg Manufacturing method of static random access memory stacked contact and structure thereof
JPH09293865A (ja) 1996-04-26 1997-11-11 Ricoh Co Ltd 半導体装置及び半導体製造方法
TW305061B (en) 1996-08-06 1997-05-11 Taiwan Semiconductor Mfg Manufacturing method of buried contact of MOS transistor
TW347578B (en) 1997-05-10 1998-12-11 Taiwan Semiconductor Mfg Co Ltd A semiconductor production process using in combination of self-aligned contact - multi-contact for connection between MOS transistors
KR19990010370A (ko) 1997-07-16 1999-02-18 문정환 반도체 소자의 비아 콘택홀 형성 방법
JPH11186389A (ja) 1997-12-24 1999-07-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
TW366562B (en) * 1998-02-03 1999-08-11 United Microelectronics Corp Manufacturing method of self-alignment contact windows
US6100569A (en) * 1999-03-19 2000-08-08 United Microelectronics Corp. Semiconductor device with shared contact
US6306701B1 (en) * 1999-04-20 2001-10-23 United Microelectronics Corp. Self-aligned contact process
JP2000353803A (ja) * 1999-06-10 2000-12-19 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3307612B2 (ja) * 1999-07-05 2002-07-24 日本電気株式会社 半導体装置の製造方法
US6432752B1 (en) * 2000-08-17 2002-08-13 Micron Technology, Inc. Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages
JP2002305302A (ja) * 2001-04-06 2002-10-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100414220B1 (ko) * 2001-06-22 2004-01-07 삼성전자주식회사 공유 콘택을 가지는 반도체 장치 및 그 제조 방법
KR20040016496A (ko) 2002-08-17 2004-02-25 삼성전자주식회사 반도체 소자의 스페이서 형성방법 및 이를 이용한 반도체소자의 제조방법
JP4160846B2 (ja) * 2003-03-06 2008-10-08 松下電器産業株式会社 半導体装置およびその製造方法
US6881614B2 (en) * 2003-06-20 2005-04-19 Taiwan Semiconductor Manufacturing Company Shared contact for high-density memory cell design
JP2005223196A (ja) * 2004-02-06 2005-08-18 Toshiba Corp 半導体装置及びその製造方法
JP2006100378A (ja) * 2004-09-28 2006-04-13 Renesas Technology Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20070018254A1 (en) 2007-01-25
US7781282B2 (en) 2010-08-24
KR100724565B1 (ko) 2007-06-04
US20100291746A1 (en) 2010-11-18
US8114730B2 (en) 2012-02-14
TWI297208B (en) 2008-05-21
KR20070013073A (ko) 2007-01-30

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