TW200639594A - Composition for photoresist stripping solution and process of photoresist stripping - Google Patents

Composition for photoresist stripping solution and process of photoresist stripping

Info

Publication number
TW200639594A
TW200639594A TW095108208A TW95108208A TW200639594A TW 200639594 A TW200639594 A TW 200639594A TW 095108208 A TW095108208 A TW 095108208A TW 95108208 A TW95108208 A TW 95108208A TW 200639594 A TW200639594 A TW 200639594A
Authority
TW
Taiwan
Prior art keywords
composition
photoresist stripping
photoresist
stripping
stripping solution
Prior art date
Application number
TW095108208A
Other languages
English (en)
Inventor
Takuo Oowada
Kaoru Ikegami
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of TW200639594A publication Critical patent/TW200639594A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G03F7/343—Lamination or delamination methods or apparatus for photolitographic photosensitive material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking
    • H01L2924/35121—Peeling or delaminating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW095108208A 2005-03-11 2006-03-10 Composition for photoresist stripping solution and process of photoresist stripping TW200639594A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005069221A JP4988165B2 (ja) 2005-03-11 2005-03-11 フォトレジスト剥離液組成物及びフォトレジストの剥離方法

Publications (1)

Publication Number Publication Date
TW200639594A true TW200639594A (en) 2006-11-16

Family

ID=36469678

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095108208A TW200639594A (en) 2005-03-11 2006-03-10 Composition for photoresist stripping solution and process of photoresist stripping

Country Status (7)

Country Link
US (1) US7816312B2 (zh)
EP (1) EP1701217A3 (zh)
JP (1) JP4988165B2 (zh)
KR (1) KR20060098333A (zh)
CN (1) CN1831654B (zh)
SG (1) SG126052A1 (zh)
TW (1) TW200639594A (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790196B (zh) * 2015-12-11 2023-01-21 日商富士軟片股份有限公司 洗淨液、基板洗淨方法及半導體元件的製造方法

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CN102138202B (zh) * 2008-08-05 2015-11-25 三菱瓦斯化学株式会社 残渣剥离液组合物及使用其的半导体元件的洗涤方法
US8420529B2 (en) * 2008-09-19 2013-04-16 Mitsubishi Gas Chemical Company, Inc. Copper wiring surface protective liquid and method for manufacturing semiconductor circuit
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KR102427699B1 (ko) 2015-04-27 2022-08-01 삼성전자주식회사 포토레지스트 제거용 조성물 및 이를 이용한 반도체 장치의 제조 방법
US9768058B2 (en) * 2015-08-10 2017-09-19 Globalfoundries Inc. Methods of forming air gaps in metallization layers on integrated circuit products
JP7150433B2 (ja) * 2017-12-28 2022-10-11 東京応化工業株式会社 リワーク方法、及び酸性洗浄液
CN111902379B (zh) * 2018-03-28 2023-02-17 富士胶片电子材料美国有限公司 清洗组合物
KR102668667B1 (ko) * 2019-02-21 2024-05-24 동우 화인켐 주식회사 레지스트 박리액 조성물

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790196B (zh) * 2015-12-11 2023-01-21 日商富士軟片股份有限公司 洗淨液、基板洗淨方法及半導體元件的製造方法

Also Published As

Publication number Publication date
CN1831654B (zh) 2012-07-18
US7816312B2 (en) 2010-10-19
SG126052A1 (en) 2006-10-30
US20060205623A1 (en) 2006-09-14
CN1831654A (zh) 2006-09-13
EP1701217A3 (en) 2007-01-03
EP1701217A2 (en) 2006-09-13
KR20060098333A (ko) 2006-09-18
JP2006251491A (ja) 2006-09-21
JP4988165B2 (ja) 2012-08-01

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