TW200634847A - Memory chip architecture with high speed operation - Google Patents
Memory chip architecture with high speed operationInfo
- Publication number
- TW200634847A TW200634847A TW094147408A TW94147408A TW200634847A TW 200634847 A TW200634847 A TW 200634847A TW 094147408 A TW094147408 A TW 094147408A TW 94147408 A TW94147408 A TW 94147408A TW 200634847 A TW200634847 A TW 200634847A
- Authority
- TW
- Taiwan
- Prior art keywords
- transmission block
- memory device
- semiconductor memory
- address
- data transmission
- Prior art date
Links
- 230000005540 biological transmission Effects 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050027401A KR100703834B1 (ko) | 2004-09-22 | 2005-03-31 | 고속 동작을 위한 메모리 칩 아키텍쳐 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200634847A true TW200634847A (en) | 2006-10-01 |
| TWI319197B TWI319197B (en) | 2010-01-01 |
Family
ID=37030524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094147408A TWI319197B (en) | 2005-03-31 | 2005-12-30 | Memory chip architecture with high speed operation |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7310258B2 (zh) |
| JP (1) | JP4982711B2 (zh) |
| CN (1) | CN100490009C (zh) |
| TW (1) | TWI319197B (zh) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7310258B2 (en) * | 2005-03-31 | 2007-12-18 | Hynix Semiconductor Inc. | Memory chip architecture with high speed operation |
| US7554864B2 (en) * | 2007-03-27 | 2009-06-30 | Hynix Semiconductor Inc. | Semiconductor memory device including a global input/output line of a data transfer path and its surrounding circuits |
| US8775238B2 (en) | 2007-04-03 | 2014-07-08 | International Business Machines Corporation | Generating customized disincentive marketing content for a customer based on customer risk assessment |
| US8812355B2 (en) | 2007-04-03 | 2014-08-19 | International Business Machines Corporation | Generating customized marketing messages for a customer using dynamic customer behavior data |
| US9626684B2 (en) | 2007-04-03 | 2017-04-18 | International Business Machines Corporation | Providing customized digital media marketing content directly to a customer |
| US8831972B2 (en) | 2007-04-03 | 2014-09-09 | International Business Machines Corporation | Generating a customer risk assessment using dynamic customer data |
| US8639563B2 (en) | 2007-04-03 | 2014-01-28 | International Business Machines Corporation | Generating customized marketing messages at a customer level using current events data |
| US9361623B2 (en) | 2007-04-03 | 2016-06-07 | International Business Machines Corporation | Preferred customer marketing delivery based on biometric data for a customer |
| US9031858B2 (en) | 2007-04-03 | 2015-05-12 | International Business Machines Corporation | Using biometric data for a customer to improve upsale ad cross-sale of items |
| US9846883B2 (en) | 2007-04-03 | 2017-12-19 | International Business Machines Corporation | Generating customized marketing messages using automatically generated customer identification data |
| US9092808B2 (en) | 2007-04-03 | 2015-07-28 | International Business Machines Corporation | Preferred customer marketing delivery based on dynamic data for a customer |
| US9685048B2 (en) | 2007-04-03 | 2017-06-20 | International Business Machines Corporation | Automatically generating an optimal marketing strategy for improving cross sales and upsales of items |
| US9031857B2 (en) | 2007-04-03 | 2015-05-12 | International Business Machines Corporation | Generating customized marketing messages at the customer level based on biometric data |
| JP5131816B2 (ja) * | 2007-04-18 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| JP2009009633A (ja) * | 2007-06-27 | 2009-01-15 | Elpida Memory Inc | 半導体記憶装置 |
| KR102620562B1 (ko) * | 2016-08-04 | 2024-01-03 | 삼성전자주식회사 | 비휘발성 메모리 장치 |
| US11017838B2 (en) | 2016-08-04 | 2021-05-25 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices |
| US10268389B2 (en) * | 2017-02-22 | 2019-04-23 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
| JP2020047325A (ja) | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置 |
| KR102670866B1 (ko) | 2018-11-28 | 2024-05-30 | 삼성전자주식회사 | 복수의 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 이를 포함하는 메모리 시스템 |
| US11657858B2 (en) | 2018-11-28 | 2023-05-23 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices including memory planes and memory systems including the same |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0366091A (ja) * | 1989-08-03 | 1991-03-20 | Hitachi Ltd | 半導体集積回路装置及びそれを搭載する樹脂封止型半導体装置 |
| JPH0650194A (ja) * | 1992-07-31 | 1994-02-22 | Honda Motor Co Ltd | 内燃エンジンの酸素センサ劣化検出装置 |
| JPH08255479A (ja) * | 1995-03-20 | 1996-10-01 | Fujitsu Ltd | 半導体記憶装置 |
| US6388314B1 (en) * | 1995-08-17 | 2002-05-14 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
| JPH09306175A (ja) * | 1996-05-14 | 1997-11-28 | Hitachi Ltd | 半導体集積回路装置 |
| JPH1050958A (ja) * | 1996-08-05 | 1998-02-20 | Toshiba Corp | 半導体記憶装置、半導体記憶装置のレイアウト方法、半導体記憶装置の動作方法および半導体記憶装置の回路配置パターン |
| US6172935B1 (en) * | 1997-04-25 | 2001-01-09 | Micron Technology, Inc. | Synchronous dynamic random access memory device |
| JPH10302470A (ja) * | 1997-04-28 | 1998-11-13 | Nec Corp | 半導体記憶装置 |
| US5880987A (en) * | 1997-07-14 | 1999-03-09 | Micron Technology, Inc. | Architecture and package orientation for high speed memory devices |
| US6314042B1 (en) * | 1998-05-22 | 2001-11-06 | Mitsubishi Denki Kabushiki Kaisha | Fast accessible semiconductor memory device |
| JP2000048567A (ja) * | 1998-05-22 | 2000-02-18 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
| JPH11353870A (ja) * | 1998-06-05 | 1999-12-24 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US6097640A (en) * | 1998-08-05 | 2000-08-01 | Winbond Electronics Corporation | Memory and circuit for accessing data bits in a memory array in multi-data rate operation |
| JP2000113695A (ja) * | 1998-10-01 | 2000-04-21 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
| KR100275751B1 (ko) | 1998-11-09 | 2000-12-15 | 윤종용 | 구조가 간단한 반도체 메모리 장치 |
| KR100335486B1 (ko) | 1999-03-22 | 2002-05-04 | 윤종용 | 다수개의 스택형 뱅크들에 공유되는 데이터 입출력 라인의 구조를 갖는 반도체 메모리 장치 |
| KR100326922B1 (ko) * | 1999-09-09 | 2002-03-13 | 윤종용 | 반도체 메모리 장치 |
| US6751651B2 (en) * | 1999-11-30 | 2004-06-15 | David A. Crockett | Web-site consistency administration among inconsistent software-object libraries of remote distributed health-care providers |
| JP4756724B2 (ja) * | 2000-02-24 | 2011-08-24 | エルピーダメモリ株式会社 | 半導体記憶装置 |
| JP4684394B2 (ja) * | 2000-07-05 | 2011-05-18 | エルピーダメモリ株式会社 | 半導体集積回路装置 |
| KR100816915B1 (ko) * | 2000-07-07 | 2008-03-26 | 모사이드 테크놀로지스, 인코포레이티드 | 일정한 액세스 레이턴시를 지닌 고속 ｄｒａｍ 및 메모리 소자 |
| JP4307694B2 (ja) | 2000-07-10 | 2009-08-05 | 文化シヤッター株式会社 | 建物用付設物の取付具及び建物用付設物の取付構造 |
| US6541849B1 (en) * | 2000-08-25 | 2003-04-01 | Micron Technology, Inc. | Memory device power distribution |
| KR100374638B1 (ko) | 2000-10-25 | 2003-03-04 | 삼성전자주식회사 | 입출력데이타의 전파경로 및 전파경로들 간의 차이를최소화하는 회로를 구비하는 반도체 메모리장치 |
| US7061941B1 (en) * | 2000-11-28 | 2006-06-13 | Winbond Electronics Corporation America | Data input and output circuits for multi-data rate operation |
| KR100380409B1 (ko) | 2001-01-18 | 2003-04-11 | 삼성전자주식회사 | 반도체 메모리 소자의 패드배열구조 및 그의 구동방법 |
| US6898110B2 (en) * | 2001-01-31 | 2005-05-24 | Hitachi, Ltd. | Semiconductor integrated circuit device |
| KR100762867B1 (ko) | 2001-06-28 | 2007-10-08 | 주식회사 하이닉스반도체 | 글로벌 입출력 라인을 갖는 반도체 메모리 장치 |
| JP2003100073A (ja) | 2001-09-25 | 2003-04-04 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP2003338175A (ja) * | 2002-05-20 | 2003-11-28 | Mitsubishi Electric Corp | 半導体回路装置 |
| KR100465602B1 (ko) | 2002-09-10 | 2005-01-13 | 주식회사 하이닉스반도체 | 글로벌 입출력(ｇｉｏ) 라인에 리피터를 구비하는 반도체메모리 장치 |
| KR100546321B1 (ko) * | 2003-03-15 | 2006-01-26 | 삼성전자주식회사 | 데이터 라인 상에 전압 감지 증폭기와 전류 감지 증폭기를갖는 멀티 뱅크 메모리 장치 |
| JP4419049B2 (ja) * | 2003-04-21 | 2010-02-24 | エルピーダメモリ株式会社 | メモリモジュール及びメモリシステム |
| KR100605576B1 (ko) * | 2003-12-29 | 2006-07-28 | 주식회사 하이닉스반도체 | 일정한 데이터 억세스 타이밍을 유지할 수 있는 반도체메모리 장치 |
| KR100537199B1 (ko) * | 2004-05-06 | 2005-12-16 | 주식회사 하이닉스반도체 | 동기식 메모리 소자 |
| KR100599444B1 (ko) * | 2004-05-06 | 2006-07-13 | 주식회사 하이닉스반도체 | 글로벌 데이터 버스 연결회로를 구비하는 멀티-포트메모리 소자 |
| KR100605573B1 (ko) * | 2004-05-06 | 2006-07-31 | 주식회사 하이닉스반도체 | 멀티-포트 메모리 소자 |
| JP2005340227A (ja) * | 2004-05-24 | 2005-12-08 | Hitachi Ltd | 半導体記憶装置と半導体装置 |
| US7110321B1 (en) * | 2004-09-07 | 2006-09-19 | Integrated Device Technology, Inc. | Multi-bank integrated circuit memory devices having high-speed memory access timing |
| US7310258B2 (en) * | 2005-03-31 | 2007-12-18 | Hynix Semiconductor Inc. | Memory chip architecture with high speed operation |
-
2005
- 2005-12-29 US US11/323,386 patent/US7310258B2/en active Active
- 2005-12-29 JP JP2005380640A patent/JP4982711B2/ja active Active
- 2005-12-30 TW TW094147408A patent/TWI319197B/zh active
-
2006
- 2006-01-16 CN CNB2006100021056A patent/CN100490009C/zh active Active
-
2007
- 2007-12-04 US US11/999,465 patent/US7495991B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP4982711B2 (ja) | 2012-07-25 |
| JP2006286169A (ja) | 2006-10-19 |
| CN1841553A (zh) | 2006-10-04 |
| US7495991B2 (en) | 2009-02-24 |
| CN100490009C (zh) | 2009-05-20 |
| US20080089107A1 (en) | 2008-04-17 |
| US20060221753A1 (en) | 2006-10-05 |
| TWI319197B (en) | 2010-01-01 |
| US7310258B2 (en) | 2007-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200634847A (en) | Memory chip architecture with high speed operation | |
| TW200710655A (en) | Memory module, memory system, and information device | |
| TW200636974A (en) | Semiconductor device and method for controlling operation thereof | |
| TW200632919A (en) | A multi-plane type flash memory and methods of controlling program and read operations thereof | |
| HK1202974A1 (zh) | 多個獨立的串行鏈接存儲器 | |
| TW200737217A (en) | Redundancy-function-equipped semiconductor memory device made from ECC memory | |
| WO2006055497A3 (en) | Command controlling different operations in different chips | |
| TW200710856A (en) | Memory device, memory array segment, and method of programming a memory cell | |
| TW200638427A (en) | Redundancy circuit in semiconductor memory device | |
| TWI265526B (en) | Semiconductor memory device and arrangement method thereof | |
| TW200741717A (en) | Nonvolatile semiconductor memory apparatus | |
| TW200707459A (en) | Identical chips with different operations in a system | |
| TW200739601A (en) | Data output circuit of semiconductor memory apparatus and method of controlling the same | |
| TW200723299A (en) | Multi-port memory device with serial input/output interface | |
| TW200733106A (en) | Nonvolatile semiconductor memory device | |
| EP2565772A4 (en) | STORAGE ASSEMBLY, STORAGE SYSTEM, AND METHOD OF ACCESSING DATA | |
| TW200729458A (en) | Semiconductor memory device | |
| TW200606955A (en) | Semiconductor storage device | |
| JP5771486B2 (ja) | 半導体メモリチップ及びこれを用いるマルチチップパッケージ | |
| KR100905816B1 (ko) | 칩 선택 제어 장치와 그것을 포함하는 불휘발성 메모리장치 | |
| TW200731280A (en) | Multi-port memory device with serial input/output interface | |
| WO2008051385A3 (en) | Data allocation in memory chips | |
| TW200737208A (en) | Semiconductor memory device | |
| WO2006124460A3 (en) | Concurrent read response acknowledge enhanced direct memory access unit | |
| ATE385591T1 (de) | Mehrraten-shared-memory-architektur für die rahmenspeicherung und vermittlung |