TW200623464A - High efficiency group III nitride led with lenticular surface - Google Patents

High efficiency group III nitride led with lenticular surface

Info

Publication number
TW200623464A
TW200623464A TW094131900A TW94131900A TW200623464A TW 200623464 A TW200623464 A TW 200623464A TW 094131900 A TW094131900 A TW 094131900A TW 94131900 A TW94131900 A TW 94131900A TW 200623464 A TW200623464 A TW 200623464A
Authority
TW
Taiwan
Prior art keywords
iii nitride
group iii
high efficiency
lenticular surface
nitride led
Prior art date
Application number
TW094131900A
Other languages
English (en)
Inventor
John Adam Edmond
Jayesh Bharathan
David Beardsley Slater
Matthew Donofrio
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/951,042 external-priority patent/US7259402B2/en
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200623464A publication Critical patent/TW200623464A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW094131900A 2004-09-22 2005-09-15 High efficiency group III nitride led with lenticular surface TW200623464A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/951,042 US7259402B2 (en) 2004-09-22 2004-09-22 High efficiency group III nitride-silicon carbide light emitting diode
US11/082,470 US8174037B2 (en) 2004-09-22 2005-03-17 High efficiency group III nitride LED with lenticular surface

Publications (1)

Publication Number Publication Date
TW200623464A true TW200623464A (en) 2006-07-01

Family

ID=35520716

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094131900A TW200623464A (en) 2004-09-22 2005-09-15 High efficiency group III nitride led with lenticular surface

Country Status (6)

Country Link
US (5) US8174037B2 (zh)
EP (3) EP1792350B1 (zh)
JP (2) JP2008514028A (zh)
KR (3) KR101024330B1 (zh)
TW (1) TW200623464A (zh)
WO (1) WO2006036565A2 (zh)

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Publication number Priority date Publication date Assignee Title
US10141482B2 (en) 2015-08-03 2018-11-27 Alpad Corporation Semiconductor light emitting device

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