TW200615977A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW200615977A
TW200615977A TW094119504A TW94119504A TW200615977A TW 200615977 A TW200615977 A TW 200615977A TW 094119504 A TW094119504 A TW 094119504A TW 94119504 A TW94119504 A TW 94119504A TW 200615977 A TW200615977 A TW 200615977A
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
read operation
enabled
column address
Prior art date
Application number
TW094119504A
Other languages
English (en)
Other versions
TWI289860B (en
Inventor
Beom-Ju Shin
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200615977A publication Critical patent/TW200615977A/zh
Application granted granted Critical
Publication of TWI289860B publication Critical patent/TWI289860B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1066—Output synchronization
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
TW094119504A 2004-11-08 2005-06-13 Semiconductor memory device TWI289860B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040090254A KR100624296B1 (ko) 2004-11-08 2004-11-08 반도체 메모리 소자

Publications (2)

Publication Number Publication Date
TW200615977A true TW200615977A (en) 2006-05-16
TWI289860B TWI289860B (en) 2007-11-11

Family

ID=36316158

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119504A TWI289860B (en) 2004-11-08 2005-06-13 Semiconductor memory device

Country Status (5)

Country Link
US (1) US7248512B2 (zh)
JP (1) JP5144882B2 (zh)
KR (1) KR100624296B1 (zh)
CN (1) CN1790544B (zh)
TW (1) TWI289860B (zh)

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US7716510B2 (en) 2006-12-19 2010-05-11 Micron Technology, Inc. Timing synchronization circuit with loop counter
US7656745B2 (en) 2007-03-15 2010-02-02 Micron Technology, Inc. Circuit, system and method for controlling read latency
KR100868251B1 (ko) * 2007-03-22 2008-11-12 주식회사 하이닉스반도체 반도체 메모리장치
KR100893577B1 (ko) * 2007-06-26 2009-04-17 주식회사 하이닉스반도체 반도체 메모리장치
KR100933694B1 (ko) * 2007-12-26 2009-12-24 주식회사 하이닉스반도체 반도체 메모리장치
US8379459B2 (en) * 2010-07-21 2013-02-19 International Business Machines Corporation Memory system with delay locked loop (DLL) bypass control
US8984320B2 (en) 2011-03-29 2015-03-17 Micron Technology, Inc. Command paths, apparatuses and methods for providing a command to a data block
US8552776B2 (en) 2012-02-01 2013-10-08 Micron Technology, Inc. Apparatuses and methods for altering a forward path delay of a signal path
US9166579B2 (en) 2012-06-01 2015-10-20 Micron Technology, Inc. Methods and apparatuses for shifting data signals to match command signal delay
US9054675B2 (en) 2012-06-22 2015-06-09 Micron Technology, Inc. Apparatuses and methods for adjusting a minimum forward path delay of a signal path
US9001594B2 (en) 2012-07-06 2015-04-07 Micron Technology, Inc. Apparatuses and methods for adjusting a path delay of a command path
US9329623B2 (en) 2012-08-22 2016-05-03 Micron Technology, Inc. Apparatuses, integrated circuits, and methods for synchronizing data signals with a command signal
US8913448B2 (en) * 2012-10-25 2014-12-16 Micron Technology, Inc. Apparatuses and methods for capturing data in a memory
US9508417B2 (en) 2014-02-20 2016-11-29 Micron Technology, Inc. Methods and apparatuses for controlling timing paths and latency based on a loop delay
US9530473B2 (en) 2014-05-22 2016-12-27 Micron Technology, Inc. Apparatuses and methods for timing provision of a command to input circuitry
US9531363B2 (en) 2015-04-28 2016-12-27 Micron Technology, Inc. Methods and apparatuses including command latency control circuit
US9813067B2 (en) 2015-06-10 2017-11-07 Micron Technology, Inc. Clock signal and supply voltage variation tracking
CN105720954A (zh) * 2016-03-17 2016-06-29 成都集思科技有限公司 温补延迟线
US9601170B1 (en) 2016-04-26 2017-03-21 Micron Technology, Inc. Apparatuses and methods for adjusting a delay of a command signal path
US9865317B2 (en) 2016-04-26 2018-01-09 Micron Technology, Inc. Methods and apparatuses including command delay adjustment circuit
CN106128500B (zh) * 2016-07-25 2023-02-24 西安紫光国芯半导体有限公司 一种动态随机存储器的快速译码器及译码方法
US9997220B2 (en) 2016-08-22 2018-06-12 Micron Technology, Inc. Apparatuses and methods for adjusting delay of command signal path
US10224938B2 (en) 2017-07-26 2019-03-05 Micron Technology, Inc. Apparatuses and methods for indirectly detecting phase variations
KR102638793B1 (ko) * 2018-10-01 2024-02-21 에스케이하이닉스 주식회사 반도체장치

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Also Published As

Publication number Publication date
TWI289860B (en) 2007-11-11
JP2006134554A (ja) 2006-05-25
JP5144882B2 (ja) 2013-02-13
US20060098502A1 (en) 2006-05-11
US7248512B2 (en) 2007-07-24
CN1790544A (zh) 2006-06-21
CN1790544B (zh) 2011-06-15
KR100624296B1 (ko) 2006-09-19
KR20060040965A (ko) 2006-05-11

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees