TW200540989A - Oxidizing method, and oxidizing unit for object to be processed, and storage media thereof - Google Patents

Oxidizing method, and oxidizing unit for object to be processed, and storage media thereof Download PDF

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Publication number
TW200540989A
TW200540989A TW094102906A TW94102906A TW200540989A TW 200540989 A TW200540989 A TW 200540989A TW 094102906 A TW094102906 A TW 094102906A TW 94102906 A TW94102906 A TW 94102906A TW 200540989 A TW200540989 A TW 200540989A
Authority
TW
Taiwan
Prior art keywords
gas
oxidizing
processing container
oxidation
active species
Prior art date
Application number
TW094102906A
Other languages
English (en)
Chinese (zh)
Other versions
TWI353636B (https=
Inventor
Kimiya Aoki
Keisuke Suzuki
Toshiyuki Ikeuchi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200540989A publication Critical patent/TW200540989A/zh
Application granted granted Critical
Publication of TWI353636B publication Critical patent/TWI353636B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
TW094102906A 2004-02-25 2005-01-31 Oxidizing method, and oxidizing unit for object to be processed, and storage media thereof TW200540989A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004050514 2004-02-25
JP2005009630A JP4706260B2 (ja) 2004-02-25 2005-01-17 被処理体の酸化方法、酸化装置及び記憶媒体

Publications (2)

Publication Number Publication Date
TW200540989A true TW200540989A (en) 2005-12-16
TWI353636B TWI353636B (https=) 2011-12-01

Family

ID=35176657

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094102906A TW200540989A (en) 2004-02-25 2005-01-31 Oxidizing method, and oxidizing unit for object to be processed, and storage media thereof

Country Status (4)

Country Link
US (1) US20050241578A1 (https=)
JP (1) JP4706260B2 (https=)
KR (1) KR100919076B1 (https=)
TW (1) TW200540989A (https=)

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* Cited by examiner, † Cited by third party
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KR100966086B1 (ko) * 2005-03-08 2010-06-28 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조 방법 및 기판처리장치
KR100900073B1 (ko) * 2005-03-16 2009-05-28 가부시키가이샤 히다치 고쿠사이 덴키 기판처리방법 및 기판처리장치
JP4983159B2 (ja) * 2006-09-01 2012-07-25 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
JP4899744B2 (ja) * 2006-09-22 2012-03-21 東京エレクトロン株式会社 被処理体の酸化装置
JP5211464B2 (ja) 2006-10-20 2013-06-12 東京エレクトロン株式会社 被処理体の酸化装置
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
JP5244380B2 (ja) * 2007-12-26 2013-07-24 昭和電工株式会社 磁気記録媒体の製造方法及び磁気記録再生装置
US9127340B2 (en) * 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process
JP5595963B2 (ja) * 2011-03-31 2014-09-24 東京エレクトロン株式会社 縦型バッチ式成膜装置
JP6529371B2 (ja) 2015-07-27 2019-06-12 東京エレクトロン株式会社 エッチング方法及びエッチング装置

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US5214496A (en) * 1982-11-04 1993-05-25 Hitachi, Ltd. Semiconductor memory
US5204140A (en) * 1986-03-24 1993-04-20 Ensci, Inc. Process for coating a substrate with tin oxide
US5603983A (en) * 1986-03-24 1997-02-18 Ensci Inc Process for the production of conductive and magnetic transitin metal oxide coated three dimensional substrates
JP3277043B2 (ja) * 1993-09-22 2002-04-22 株式会社東芝 半導体装置の製造方法
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP2720796B2 (ja) * 1994-11-15 1998-03-04 日本電気株式会社 半導体装置の製造方法
JP2636796B2 (ja) * 1995-05-24 1997-07-30 日本電気株式会社 半導体装置の製造方法
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
EP0910119B1 (en) * 1997-10-14 2009-06-03 Texas Instruments Incorporated Method for oxidizing a structure during the fabrication of a semiconductor device
JPH11260759A (ja) * 1998-03-12 1999-09-24 Fujitsu Ltd 半導体装置の製造方法
US6835672B1 (en) * 1998-10-15 2004-12-28 Texas Instruments Incorporated Selective oxidation for semiconductor device fabrication
JP2000332245A (ja) * 1999-05-25 2000-11-30 Sony Corp 半導体装置の製造方法及びｐ形半導体素子の製造方法
JP2000349081A (ja) * 1999-06-07 2000-12-15 Sony Corp 酸化膜形成方法
JP4592864B2 (ja) * 2000-03-16 2010-12-08 富士通セミコンダクター株式会社 半導体装置およびその製造方法
KR100560867B1 (ko) * 2000-05-02 2006-03-13 동경 엘렉트론 주식회사 산화방법 및 산화시스템
JP3436256B2 (ja) * 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
US6696363B2 (en) * 2000-06-06 2004-02-24 Ekc Technology, Inc. Method of and apparatus for substrate pre-treatment
JP4607347B2 (ja) * 2001-02-02 2011-01-05 東京エレクトロン株式会社 被処理体の処理方法及び処理装置
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JP3578155B2 (ja) * 2002-07-05 2004-10-20 東京エレクトロン株式会社 被処理体の酸化方法
JP4345410B2 (ja) * 2003-08-29 2009-10-14 東京エレクトロン株式会社 酸化方法
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体

Also Published As

Publication number Publication date
JP2005277386A (ja) 2005-10-06
TWI353636B (https=) 2011-12-01
JP4706260B2 (ja) 2011-06-22
KR100919076B1 (ko) 2009-09-28
US20050241578A1 (en) 2005-11-03
KR20060042203A (ko) 2006-05-12

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