CN100447980C - 用于制造半导体集成电路器件的方法 - Google Patents
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- CN100447980C CN100447980C CNB2006101357454A CN200610135745A CN100447980C CN 100447980 C CN100447980 C CN 100447980C CN B2006101357454 A CNB2006101357454 A CN B2006101357454A CN 200610135745 A CN200610135745 A CN 200610135745A CN 100447980 C CN100447980 C CN 100447980C
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
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- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP069514/2001 | 2001-03-12 | ||
JP2001069514 | 2001-03-12 |
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CNB018229441A Division CN1290197C (zh) | 2001-03-12 | 2001-10-31 | 用于制造半导体集成电路器件的方法 |
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CN1941324A CN1941324A (zh) | 2007-04-04 |
CN100447980C true CN100447980C (zh) | 2008-12-31 |
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CNB018229441A Expired - Fee Related CN1290197C (zh) | 2001-03-12 | 2001-10-31 | 用于制造半导体集成电路器件的方法 |
CNB2006101357454A Expired - Fee Related CN100447980C (zh) | 2001-03-12 | 2001-10-31 | 用于制造半导体集成电路器件的方法 |
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CNB018229441A Expired - Fee Related CN1290197C (zh) | 2001-03-12 | 2001-10-31 | 用于制造半导体集成电路器件的方法 |
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US (3) | US7049187B2 (zh) |
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KR (2) | KR100653796B1 (zh) |
CN (2) | CN1290197C (zh) |
TW (1) | TW536753B (zh) |
WO (1) | WO2002073696A1 (zh) |
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Also Published As
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KR100653796B1 (ko) | 2006-12-05 |
KR20030080239A (ko) | 2003-10-11 |
US7144766B2 (en) | 2006-12-05 |
US7049187B2 (en) | 2006-05-23 |
CN1941324A (zh) | 2007-04-04 |
US7300833B2 (en) | 2007-11-27 |
JP2008211212A (ja) | 2008-09-11 |
KR20050004924A (ko) | 2005-01-12 |
JP4607197B2 (ja) | 2011-01-05 |
US20070048917A1 (en) | 2007-03-01 |
CN1290197C (zh) | 2006-12-13 |
JP4109118B2 (ja) | 2008-07-02 |
US20060009046A1 (en) | 2006-01-12 |
JPWO2002073696A1 (ja) | 2004-07-08 |
US20040063276A1 (en) | 2004-04-01 |
TW536753B (en) | 2003-06-11 |
WO2002073696A1 (fr) | 2002-09-19 |
CN1505840A (zh) | 2004-06-16 |
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