TW200517483A - Cerium salt and fabricating method thereof, cerium oxide and cerium polishing agent - Google Patents
Cerium salt and fabricating method thereof, cerium oxide and cerium polishing agentInfo
- Publication number
- TW200517483A TW200517483A TW093127245A TW93127245A TW200517483A TW 200517483 A TW200517483 A TW 200517483A TW 093127245 A TW093127245 A TW 093127245A TW 93127245 A TW93127245 A TW 93127245A TW 200517483 A TW200517483 A TW 200517483A
- Authority
- TW
- Taiwan
- Prior art keywords
- cerium
- salt
- cerium salt
- polishing agent
- cerium oxide
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/10—Preparation or treatment, e.g. separation or purification
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/247—Carbonates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003320667 | 2003-09-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200517483A true TW200517483A (en) | 2005-06-01 |
TWI286567B TWI286567B (en) | 2007-09-11 |
Family
ID=34308608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093127245A TWI286567B (en) | 2003-09-12 | 2004-09-09 | Cerium salt and fabricating method thereof, cerium oxide and cerium polishing agent |
Country Status (6)
Country | Link |
---|---|
US (3) | US20070166216A1 (zh) |
JP (6) | JP4913409B2 (zh) |
KR (1) | KR100714814B1 (zh) |
CN (2) | CN101885959B (zh) |
TW (1) | TWI286567B (zh) |
WO (1) | WO2005026051A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011111421A1 (ja) | 2010-03-12 | 2011-09-15 | 日立化成工業株式会社 | スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法 |
US8938990B2 (en) * | 2010-09-30 | 2015-01-27 | Hoya Corporation | Method for producing glass substrate for information storage medium, and information storage medium |
CN103374330B (zh) * | 2010-11-22 | 2015-10-14 | 日立化成株式会社 | 磨粒的制造方法、悬浮液的制造方法以及研磨液的制造方法 |
SG190058A1 (en) | 2010-11-22 | 2013-06-28 | Hitachi Chemical Co Ltd | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
KR20130129397A (ko) | 2010-11-22 | 2013-11-28 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 |
AU2014201865B2 (en) * | 2011-06-30 | 2016-04-28 | Kabushiki Kaisha Toshiba | Process for producing rare metal |
WO2013125445A1 (ja) | 2012-02-21 | 2013-08-29 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
CN104137232A (zh) | 2012-02-21 | 2014-11-05 | 日立化成株式会社 | 研磨剂、研磨剂组和基体的研磨方法 |
US10557059B2 (en) | 2012-05-22 | 2020-02-11 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
US9932497B2 (en) | 2012-05-22 | 2018-04-03 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
US10549399B2 (en) | 2012-05-22 | 2020-02-04 | Hitachi Chemcial Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
DE102012216647A1 (de) * | 2012-09-18 | 2014-03-20 | Siemens Aktiengesellschaft | Verfahren zur Gewinnung mindestens eines Seltenerdmetallchlorids sowie eines Seltenerdmetalls |
JP6088953B2 (ja) * | 2013-09-24 | 2017-03-01 | 三井金属鉱業株式会社 | 研摩材スラリー及びそれを用いた基板の製造方法 |
TWI704298B (zh) | 2016-11-04 | 2020-09-11 | 日商日本精工股份有限公司 | 保持器及具備其之滾動軸承 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5395900A (en) | 1977-02-02 | 1978-08-22 | Mitsubishi Chem Ind Ltd | Production of fine rare earth elements carbonate powder |
JPH01112561A (ja) | 1987-10-27 | 1989-05-01 | Canon Inc | テープローディング装置 |
JP2786095B2 (ja) | 1993-11-24 | 1998-08-13 | 信越化学工業株式会社 | 炭酸セリウムおよび酸化セリウムの製造方法 |
JP3430733B2 (ja) * | 1994-09-30 | 2003-07-28 | 株式会社日立製作所 | 研磨剤及び研磨方法 |
TW274625B (zh) * | 1994-09-30 | 1996-04-21 | Hitachi Seisakusyo Kk | |
JP2864451B2 (ja) * | 1994-11-07 | 1999-03-03 | 三井金属鉱業株式会社 | 研磨材及び研磨方法 |
JPH09183966A (ja) * | 1995-12-29 | 1997-07-15 | Seimi Chem Co Ltd | セリウム研摩材の製造方法 |
US6420269B2 (en) * | 1996-02-07 | 2002-07-16 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same |
JP3560151B2 (ja) | 1996-02-07 | 2004-09-02 | 日立化成工業株式会社 | 酸化セリウム研磨剤、半導体チップ、それらの製造法及び基板の研磨法 |
TW365563B (en) * | 1997-04-28 | 1999-08-01 | Seimi Chem Kk | Polishing agent for semiconductor and method for its production |
JPH1112561A (ja) * | 1997-04-28 | 1999-01-19 | Seimi Chem Co Ltd | 半導体用研磨剤および半導体用研磨剤の製造方法 |
JP3480323B2 (ja) * | 1998-06-30 | 2003-12-15 | 日立化成工業株式会社 | 酸化セリウム研磨剤、基板の研磨法及び半導体装置 |
JP2000026840A (ja) | 1998-07-09 | 2000-01-25 | Toray Ind Inc | 研磨材 |
JP3983949B2 (ja) * | 1998-12-21 | 2007-09-26 | 昭和電工株式会社 | 研磨用酸化セリウムスラリー、その製造法及び研磨方法 |
US6602111B1 (en) * | 1999-07-16 | 2003-08-05 | Seimi Chemical Co., Ltd. | Abrasive |
JP2001089748A (ja) | 1999-07-16 | 2001-04-03 | Seimi Chem Co Ltd | 研磨剤 |
TW586157B (en) * | 2000-04-13 | 2004-05-01 | Showa Denko Kk | Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same |
US6733553B2 (en) * | 2000-04-13 | 2004-05-11 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same |
JP3510850B2 (ja) * | 2000-10-17 | 2004-03-29 | 株式会社相互ポンプ製作所 | ダブルポンプ |
JP4742422B2 (ja) * | 2001-01-18 | 2011-08-10 | 住友化学株式会社 | 硝酸セリウム(iv)アンモニウムの製造方法 |
JP2002371267A (ja) * | 2001-06-15 | 2002-12-26 | Mitsui Mining & Smelting Co Ltd | セリウム系研摩材粒子の製造方法及びセリウム系研摩材粒子 |
JP4237957B2 (ja) * | 2001-09-28 | 2009-03-11 | 三井金属鉱業株式会社 | セリウム系研摩材原料の品質評価方法 |
JP3855047B2 (ja) * | 2002-03-01 | 2006-12-06 | 独立行政法人物質・材料研究機構 | ナノ針状セリア粒子の製造法 |
-
2004
- 2004-09-09 TW TW093127245A patent/TWI286567B/zh active
- 2004-09-09 US US10/571,583 patent/US20070166216A1/en not_active Abandoned
- 2004-09-09 KR KR1020067004634A patent/KR100714814B1/ko active IP Right Grant
- 2004-09-09 CN CN2010102382163A patent/CN101885959B/zh active Active
- 2004-09-09 CN CN2004800257778A patent/CN1849264B/zh active Active
- 2004-09-09 JP JP2005513887A patent/JP4913409B2/ja active Active
- 2004-09-09 WO PCT/JP2004/013118 patent/WO2005026051A1/ja active IP Right Grant
-
2009
- 2009-08-25 JP JP2009194508A patent/JP2009274953A/ja active Pending
-
2010
- 2010-09-20 US US12/886,209 patent/US8323604B2/en active Active
-
2011
- 2011-10-11 JP JP2011224046A patent/JP5882659B2/ja active Active
-
2012
- 2012-09-24 US US13/625,214 patent/US20130014446A1/en not_active Abandoned
-
2014
- 2014-11-26 JP JP2014238604A patent/JP2015091971A/ja active Pending
-
2016
- 2016-07-21 JP JP2016143389A patent/JP2016216734A/ja active Pending
-
2018
- 2018-02-06 JP JP2018018789A patent/JP6421887B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP5882659B2 (ja) | 2016-03-09 |
TWI286567B (en) | 2007-09-11 |
CN101885959A (zh) | 2010-11-17 |
JP2015091971A (ja) | 2015-05-14 |
CN101885959B (zh) | 2012-06-13 |
JP6421887B2 (ja) | 2018-11-14 |
JP2012052121A (ja) | 2012-03-15 |
JP2016216734A (ja) | 2016-12-22 |
JPWO2005026051A1 (ja) | 2007-11-08 |
US8323604B2 (en) | 2012-12-04 |
KR20060061370A (ko) | 2006-06-07 |
JP2018104711A (ja) | 2018-07-05 |
US20110006251A1 (en) | 2011-01-13 |
US20130014446A1 (en) | 2013-01-17 |
CN1849264B (zh) | 2010-09-22 |
JP4913409B2 (ja) | 2012-04-11 |
JP2009274953A (ja) | 2009-11-26 |
WO2005026051A1 (ja) | 2005-03-24 |
US20070166216A1 (en) | 2007-07-19 |
CN1849264A (zh) | 2006-10-18 |
KR100714814B1 (ko) | 2007-05-04 |
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