TW200509395A - High performance FET devices and methods thereof - Google Patents

High performance FET devices and methods thereof

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Publication number
TW200509395A
TW200509395A TW093112010A TW93112010A TW200509395A TW 200509395 A TW200509395 A TW 200509395A TW 093112010 A TW093112010 A TW 093112010A TW 93112010 A TW93112010 A TW 93112010A TW 200509395 A TW200509395 A TW 200509395A
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TW
Taiwan
Prior art keywords
insulator
methods
fet devices
high performance
layer
Prior art date
Application number
TW093112010A
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English (en)
Other versions
TWI279914B (en
Inventor
Jack Oon Chu
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Ibm
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Publication date
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Publication of TW200509395A publication Critical patent/TW200509395A/zh
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Publication of TWI279914B publication Critical patent/TWI279914B/zh

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    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW093112010A 2003-05-01 2004-04-29 High performance FET devices and methods thereof TWI279914B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/427,233 US6909186B2 (en) 2003-05-01 2003-05-01 High performance FET devices and methods therefor

Publications (2)

Publication Number Publication Date
TW200509395A true TW200509395A (en) 2005-03-01
TWI279914B TWI279914B (en) 2007-04-21

Family

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Family Applications (1)

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TW093112010A TWI279914B (en) 2003-05-01 2004-04-29 High performance FET devices and methods thereof

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Country Link
US (6) US6909186B2 (zh)
JP (2) JP2004336048A (zh)
TW (1) TWI279914B (zh)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
KR100474850B1 (ko) * 2002-11-15 2005-03-11 삼성전자주식회사 수직 채널을 가지는 비휘발성 ｓｏｎｏｓ 메모리 및 그 제조방법
US6909186B2 (en) * 2003-05-01 2005-06-21 International Business Machines Corporation High performance FET devices and methods therefor
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