TW200505950A - Organic polymers electronic devices, and methods - Google Patents

Organic polymers electronic devices, and methods

Info

Publication number
TW200505950A
TW200505950A TW093111915A TW93111915A TW200505950A TW 200505950 A TW200505950 A TW 200505950A TW 093111915 A TW093111915 A TW 093111915A TW 93111915 A TW93111915 A TW 93111915A TW 200505950 A TW200505950 A TW 200505950A
Authority
TW
Taiwan
Prior art keywords
group
independently
electronic devices
organic
methods
Prior art date
Application number
TW093111915A
Other languages
English (en)
Chinese (zh)
Inventor
Feng Bai
Kevin Michael Lewandowski
Tzu-Chen Lee
Dawn Victoria Muyres
Tommie Wilson Kelley
Todd Douglas Jones
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of TW200505950A publication Critical patent/TW200505950A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31692—Next to addition polymer from unsaturated monomers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Formation Of Insulating Films (AREA)
TW093111915A 2003-05-08 2004-04-28 Organic polymers electronic devices, and methods TW200505950A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/434,377 US7098525B2 (en) 2003-05-08 2003-05-08 Organic polymers, electronic devices, and methods

Publications (1)

Publication Number Publication Date
TW200505950A true TW200505950A (en) 2005-02-16

Family

ID=33416675

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093111915A TW200505950A (en) 2003-05-08 2004-04-28 Organic polymers electronic devices, and methods

Country Status (9)

Country Link
US (2) US7098525B2 (enExample)
EP (1) EP1620885B1 (enExample)
JP (1) JP4668916B2 (enExample)
KR (1) KR20060009320A (enExample)
CN (2) CN1813343A (enExample)
AT (1) ATE439681T1 (enExample)
DE (1) DE602004022534D1 (enExample)
TW (1) TW200505950A (enExample)
WO (1) WO2004102652A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462359B (zh) * 2006-10-20 2014-11-21 Nippon Kayaku Kk 場效電晶體及其製造方法

Families Citing this family (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10247817A1 (de) * 2002-10-14 2004-04-22 Infineon Technologies Ag Polymertransistor-Anordnung, integrierte Schaltkreis-Anordnung und Verfahren zum Herstellen einer Polymertransistor-Anordnung
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
DE602004017858D1 (de) * 2003-05-12 2009-01-02 Cambridge Entpr Ltd Polymerer transistor
DE10324533A1 (de) * 2003-05-28 2004-12-16 H.C. Starck Gmbh Stabile Lösungen von organischen halbleitenden Verbindungen
JP4470398B2 (ja) * 2003-06-23 2010-06-02 Ｔｄｋ株式会社 電界効果トランジスタ
JP4228204B2 (ja) * 2003-07-07 2009-02-25 セイコーエプソン株式会社 有機トランジスタの製造方法
TWI221341B (en) * 2003-09-18 2004-09-21 Ind Tech Res Inst Method and material for forming active layer of thin film transistor
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
KR100697511B1 (ko) 2003-10-21 2007-03-20 삼성전자주식회사 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법
WO2005057665A1 (ja) * 2003-12-08 2005-06-23 Matsushita Electric Industrial Co., Ltd. 電界効果トランジスタ及び電気素子アレイ、並びにそれらの製造方法
US20050137281A1 (en) * 2003-12-18 2005-06-23 3M Innovative Properties Company Printable dielectric materials, devices, and methods
JP4544913B2 (ja) * 2004-03-24 2010-09-15 富士フイルム株式会社 表面グラフト形成方法、導電性膜の形成方法、金属パターン形成方法、多層配線板の形成方法、表面グラフト材料、及び導電性材料
US7256436B2 (en) * 2004-03-30 2007-08-14 Shin-Etsu Chemical Co., Ltd. Thin-film field-effect transistors and making method
US7479362B2 (en) * 2004-04-29 2009-01-20 Seiko Epson Corporation UV decomposable molecules and a photopatternable monomolecular film formed therefrom
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
EP1648040B1 (en) * 2004-08-31 2016-06-01 Osaka University Thin-layer chemical transistors and their manufacture
KR100606655B1 (ko) * 2004-09-22 2006-08-01 한국전자통신연구원 광반응성 유기고분자 게이트 절연막 조성물 및 이를이용한 유기박막 트랜지스터
US7399668B2 (en) * 2004-09-30 2008-07-15 3M Innovative Properties Company Method for making electronic devices having a dielectric layer surface treatment
US7358571B2 (en) * 2004-10-20 2008-04-15 Taiwan Semiconductor Manufacturing Company Isolation spacer for thin SOI devices
US7265063B2 (en) * 2004-10-22 2007-09-04 Hewlett-Packard Development Company, L.P. Method of forming a component having dielectric sub-layers
DE102004052266A1 (de) * 2004-10-27 2006-06-01 Infineon Technologies Ag Integrierte Analogschaltung in Schaltkondesatortechnik sowie Verfahren zu deren Herstellung
WO2006052625A1 (en) * 2004-11-03 2006-05-18 Massachusetts Institute Of Technology Control of threshold voltage in organic field effect transistors
US20060105199A1 (en) * 2004-11-18 2006-05-18 3M Innovative Properties Company Electroluminescent devices containing trans-1,2-bis(acenyl)ethylene compounds
US7315042B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Semiconductors containing trans-1,2-bis(acenyl)ethylene compounds
US20060128165A1 (en) * 2004-12-13 2006-06-15 3M Innovative Properties Company Method for patterning surface modification
KR101086159B1 (ko) * 2005-01-07 2011-11-25 삼성전자주식회사 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터
US7151276B2 (en) * 2005-03-09 2006-12-19 3M Innovative Properties Company Semiconductors containing perfluoroether acyl oligothiophene compounds
US7211679B2 (en) * 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
US20060214154A1 (en) * 2005-03-24 2006-09-28 Eastman Kodak Company Polymeric gate dielectrics for organic thin film transistors and methods of making the same
US20060231908A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation Multilayer gate dielectric
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
US8741442B2 (en) * 2005-04-15 2014-06-03 General Electric Company Modified electrodes using functional organic materials and electronic devices therefrom
US20060270066A1 (en) 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
US7705346B2 (en) * 2005-06-06 2010-04-27 Xerox Corporation Barrier layer for an organic electronic device
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US7319153B2 (en) * 2005-07-29 2008-01-15 3M Innovative Properties Company 6,13-Bis(thienyl)pentacene compounds
KR20070018456A (ko) * 2005-08-10 2007-02-14 삼성전자주식회사 표시장치용 기판, 그 제조방법, 그 검사방법 및 이를 갖는액정표시장치
US7414262B2 (en) * 2005-09-30 2008-08-19 Lexmark International, Inc. Electronic devices and methods for forming the same
US7498662B2 (en) * 2005-11-18 2009-03-03 3M Innovative Properties Company Dielectric media including surface-treated metal oxide particles
US20070128465A1 (en) * 2005-12-05 2007-06-07 General Electric Company Transparent electrode for organic electronic devices
KR100670379B1 (ko) * 2005-12-15 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터, 그 제조방법 및 이를 구비한 유기발광 디스플레이 장치
US8097877B2 (en) 2005-12-20 2012-01-17 Northwestern University Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films
US20070146426A1 (en) * 2005-12-28 2007-06-28 Nelson Brian K All-inkjet printed thin film transistor
US7514710B2 (en) * 2005-12-28 2009-04-07 3M Innovative Properties Company Bottom gate thin film transistors
US8309953B2 (en) 2006-01-09 2012-11-13 Technion Research And Development Foundation Ltd. Transistor structures and methods of fabrication thereof
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
TW200730978A (en) * 2006-02-08 2007-08-16 Wintek Corp Active matrix liquid crystal display and pixel structure thereof
KR101186725B1 (ko) * 2006-02-21 2012-09-28 삼성전자주식회사 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터 및 이의 제조방법
JPWO2007099690A1 (ja) * 2006-02-28 2009-07-16 パイオニア株式会社 有機トランジスタ及びその製造方法
US8124172B2 (en) * 2006-03-02 2012-02-28 E.I. Du Pont De Nemours And Company Process for making contained layers and devices made with same
US7667230B2 (en) * 2006-03-31 2010-02-23 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers
US7608679B2 (en) * 2006-03-31 2009-10-27 3M Innovative Properties Company Acene-thiophene copolymers
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
US7666968B2 (en) * 2006-04-21 2010-02-23 3M Innovative Properties Company Acene-thiophene copolymers with silethynly groups
WO2008002660A2 (en) * 2006-06-28 2008-01-03 Northwestern University Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof
US8012564B2 (en) * 2006-07-24 2011-09-06 Alcatel Lucent Nanoparticle dispersions with low aggregation levels
KR101224723B1 (ko) * 2006-09-15 2013-01-21 삼성전자주식회사 유기 절연막 조성물, 이를 이용하여 제조된 유기 절연막 및유기 박막 트랜지스터
EP2089442B1 (en) 2006-11-28 2014-10-01 Polyera Corporation Photopolymer-based dielectric materials and methods of preparation and use thereof
JP5320746B2 (ja) * 2007-03-28 2013-10-23 凸版印刷株式会社 薄膜トランジスタ
US7754510B2 (en) * 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
US7795614B2 (en) * 2007-04-02 2010-09-14 Xerox Corporation Device with phase-separated dielectric structure
JP2010532096A (ja) * 2007-06-28 2010-09-30 スリーエム イノベイティブ プロパティズ カンパニー ゲート構造体を形成する方法
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
KR100878449B1 (ko) 2007-08-08 2009-01-19 한국화학연구원 유기절연체의 신규 표면 처리 방법 및 이를 적용한유기박막트랜지스터
JP2009047879A (ja) * 2007-08-20 2009-03-05 Seiko Epson Corp 有機エレクトロルミネッセンス装置及びその製造方法、電子機器
US7709370B2 (en) 2007-09-20 2010-05-04 International Business Machines Corporation Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures
US8618663B2 (en) 2007-09-20 2013-12-31 International Business Machines Corporation Patternable dielectric film structure with improved lithography and method of fabricating same
US8084862B2 (en) 2007-09-20 2011-12-27 International Business Machines Corporation Interconnect structures with patternable low-k dielectrics and method of fabricating same
CN101399316B (zh) * 2007-09-27 2010-09-15 财团法人工业技术研究院 有机薄膜晶体管以及控制高分子材料层表面能的方法
WO2009055628A1 (en) * 2007-10-26 2009-04-30 E. I. Du Pont De Nemours And Company Process and materials for making contained layers and devices made with same
KR20090065254A (ko) * 2007-12-17 2009-06-22 한국전자통신연구원 광반응성 유기고분자 게이트 절연막 조성물 및 이를 이용한유기 박막 트랜지스터
WO2009079004A1 (en) * 2007-12-18 2009-06-25 Lumimove, Inc., Dba Crosslink Flexible electroluminescent devices and systems
US7994495B2 (en) * 2008-01-16 2011-08-09 Xerox Corporation Organic thin film transistors
GB2458940B (en) * 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
KR101622420B1 (ko) * 2008-05-30 2016-05-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 실릴에티닐 펜타센 화합물 및 조성물 및 그의 제조 및 사용 방법
JP5406284B2 (ja) * 2008-06-11 2014-02-05 スリーエム イノベイティブ プロパティズ カンパニー 有機半導体の堆積のための混合溶媒系
JP5199752B2 (ja) * 2008-06-30 2013-05-15 住友化学株式会社 有機薄膜トランジスタ及びその製造方法、並びにこの有機トランジスタを用いたディスプレイ用部材及びディスプレイ
JP2010007030A (ja) * 2008-06-30 2010-01-14 Sumitomo Chemical Co Ltd 絶縁層用組成物
US20100006841A1 (en) * 2008-07-11 2010-01-14 International Business Machines Corporation Dual metal gate transistor with resistor having dielectric layer between metal and polysilicon
JP5334039B2 (ja) * 2008-09-01 2013-11-06 国立大学法人大阪大学 有機電界効果トランジスター及びその製造方法
US8154080B2 (en) * 2008-12-05 2012-04-10 Xerox Corporation Dielectric structure having lower-k and higher-k materials
JP5630036B2 (ja) * 2009-05-07 2014-11-26 セイコーエプソン株式会社 有機トランジスター、有機トランジスターの製造方法、電気光学装置および電子機器
JP5886189B2 (ja) * 2009-05-25 2016-03-16 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 架橋可能な誘電体、並びにその製造方法及び使用方法
JP5722884B2 (ja) 2009-05-29 2015-05-27 スリーエム イノベイティブ プロパティズ カンパニー フッ素化シリルエチニルペンタセン化合物及び組成物、並びにその製造及び使用方法
US8786049B2 (en) * 2009-07-23 2014-07-22 Proteus Digital Health, Inc. Solid-state thin-film capacitor
US8592239B2 (en) * 2009-07-27 2013-11-26 E I Du Pont De Nemours And Company Process and materials for making contained layers and devices made with same
US7948016B1 (en) * 2009-11-03 2011-05-24 3M Innovative Properties Company Off-center deposition of organic semiconductor in an organic semiconductor device
TWI422573B (zh) * 2010-02-11 2014-01-11 Nat Univ Tsing Hua 有機薄膜電晶體暨其製備方法
JP5652005B2 (ja) * 2010-06-03 2015-01-14 ソニー株式会社 薄膜トランジスタおよびその製造方法、ならびに電子機器
KR20130112882A (ko) * 2010-09-02 2013-10-14 메르크 파텐트 게엠베하 유기 전자 디바이스의 제조 방법
US20120305892A1 (en) * 2010-12-08 2012-12-06 Martin Thornton Electronic device, method of manufacturing a device and apparatus for manufacturing a device
CN102176373B (zh) * 2011-02-14 2012-08-22 扬州凯普电子有限公司 一种大容量蓄能电容器
GB201108865D0 (en) * 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Semiconductor compounds
GB201108864D0 (en) * 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Transistors and methods of making them
GB2491810B (en) 2011-05-31 2018-03-21 Smartkem Ltd Organic semiconductor compositions
GB201203159D0 (en) 2012-02-23 2012-04-11 Smartkem Ltd Organic semiconductor compositions
JP2013219172A (ja) 2012-04-09 2013-10-24 Sony Corp 電子デバイス及びその製造方法並びに画像表示装置
JP5887244B2 (ja) * 2012-09-28 2016-03-16 富士フイルム株式会社 パターン形成用自己組織化組成物、それを用いたブロックコポリマーの自己組織化によるパターン形成方法、及び自己組織化パターン、並びに電子デバイスの製造方法
ES2683293T3 (es) 2013-08-28 2018-09-26 Smartkem Limited Composiciones semiconductoras orgánicas poliméricas
KR20160000753A (ko) * 2014-06-25 2016-01-05 삼성전기주식회사 박막형 커패시터 소자 및 이의 제조 방법
WO2016046659A1 (en) * 2014-09-25 2016-03-31 Basf Se Ether-based polymers as photo-crosslinkable dielectrics
KR101781685B1 (ko) * 2014-09-30 2017-10-23 주식회사 엘지화학 블록 공중합체
US9809720B2 (en) * 2015-07-06 2017-11-07 University Of Massachusetts Ferroelectric nanocomposite based dielectric inks for reconfigurable RF and microwave applications
US9647200B1 (en) 2015-12-07 2017-05-09 International Business Machines Corporation Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material
WO2017103914A1 (en) 2015-12-17 2017-06-22 Regentis Biomaterials Ltd. Ready for use organic solvent free compositions comprising protein-polymer conjugates and uses thereof
JPWO2019059169A1 (ja) * 2017-09-22 2020-09-03 東レ株式会社 透明感光性樹脂組成物、フォトスペーサー、液晶表示装置、フォトスペーサーの製造方法、液晶表示装置の製造方法および透明感光性樹脂組成物のレンズスキャン露光への使用
US11683977B2 (en) 2017-11-30 2023-06-20 3M Innovative Properties Company Substrate including a self-supporting tri-layer stack
US20190297758A1 (en) * 2018-03-23 2019-09-26 Intel IP Corporation Electromagnetic shielding cap, an electrical system and a method for forming an electromagnetic shielding cap
US10839992B1 (en) 2019-05-17 2020-11-17 Raytheon Company Thick film resistors having customizable resistances and methods of manufacture
JP7622639B2 (ja) * 2019-11-12 2025-01-28 Jsr株式会社 組成物、基板の製造方法及び重合体
CN111574668B (zh) * 2020-03-25 2022-05-10 西南科技大学 含可水解硅氧烷的嵌段共聚物、树脂及其制备方法
JP2023023113A (ja) * 2021-08-04 2023-02-16 日本化薬株式会社 硬化性高分子化合物を含む樹脂組成物
CN113972068B (zh) * 2021-10-13 2023-08-11 四川圣融达容阻科技有限公司 一种玻璃釉电容器及其制备方法
US11945966B2 (en) * 2021-12-09 2024-04-02 Canon Kabushiki Kaisha Photocurable composition with enhanced thermal stability
CN114702626B (zh) * 2022-03-29 2023-09-12 成都翊昂科技有限公司 腈类聚合物电解质基体材料、电解质及电池
CN115872900B (zh) * 2022-12-05 2025-03-18 深圳湾实验室坪山生物医药研发转化中心 烷基自由基生成和捕获的方法及其产物与产物的应用
CN116903492A (zh) * 2023-07-14 2023-10-20 香河昆仑新能源材料股份有限公司 一种2-(4-乙烯基苯基)乙腈的制备方法

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034014A (en) * 1970-10-16 1977-07-05 Allied Chemical Corporation Production of polyanhydride epoxide prepolymer compositions
US4066925A (en) * 1976-08-03 1978-01-03 Minnesota Mining And Manufacturing Company Electroluminescent lamp and electrode preform for use therewith
US4335180A (en) * 1978-12-26 1982-06-15 Rogers Corporation Microwave circuit boards
JPS5931521B2 (ja) * 1979-07-23 1984-08-02 信越化学工業株式会社 シアノエチルプルランおよびその製造方法
US4554324A (en) * 1982-09-16 1985-11-19 Minnesota Mining And Manufacturing Co. Acrylate copolymer pressure-sensitive adhesive composition and sheet materials coated therewith
GB8715959D0 (en) 1987-07-07 1987-08-12 British Petroleum Co Plc Field effect transistors
US5126915A (en) * 1989-07-28 1992-06-30 E. I. Du Pont De Nemours And Company Metal oxide-coated electrically conductive powders and compositions thereof
US5408023A (en) * 1989-10-23 1995-04-18 The Dow Chemical Company Preparation of modified vinyl polymers
US5593782A (en) * 1992-07-13 1997-01-14 Minnesota Mining And Manufacturing Company Encapsulated electroluminescent phosphor and method for making same
FR2664430B1 (fr) * 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5085886A (en) * 1990-12-19 1992-02-04 Allied-Signal Inc. Photodefinable interlevel dielectrics
JPH06505101A (ja) 1990-12-19 1994-06-09 アライド−シグナル・インコーポレーテッド フォトデフィナブル中間レベル誘電体
JPH04221939A (ja) * 1990-12-25 1992-08-12 Nippon Oil & Fats Co Ltd 有機高分子非線形光学材料
JPH068653A (ja) * 1992-06-26 1994-01-18 Lintec Corp 熱転写紙
US5358775A (en) * 1993-07-29 1994-10-25 Rogers Corporation Fluoropolymeric electrical substrate material exhibiting low thermal coefficient of dielectric constant
NO314475B1 (no) 1994-03-24 2003-03-24 Nippon Petrochemicals Co Ltd Elektrisk isolerende polymermateriale og anvendelse derav
JP3994441B2 (ja) * 1995-01-09 2007-10-17 松下電器産業株式会社 電界効果トランジスタ
US5545510A (en) * 1995-03-28 1996-08-13 Mac Dermid, Inc. Photodefinable dielectric composition useful in the manufacture of printed circuits
US6099939A (en) * 1995-04-13 2000-08-08 International Business Machines Corporation Enhanced adhesion between a vapor deposited metal and an organic polymer surface exhibiting tailored morphology
EP0801517A3 (en) * 1995-07-14 1997-12-10 Matsushita Electric Industrial Co., Ltd. Illuminated switch unit
US5844168A (en) 1995-08-01 1998-12-01 Minnesota Mining And Manufacturing Company Multi-layer interconnect sutructure for ball grid arrays
AU7256496A (en) 1995-10-17 1997-05-07 Minnesota Mining And Manufacturing Company Method for radiation-induced thermal transfer of resist for flexible printed circuitry
US5739193A (en) * 1996-05-07 1998-04-14 Hoechst Celanese Corp. Polymeric compositions having a temperature-stable dielectric constant
EP0906588B1 (en) 1996-11-04 2002-03-27 The B.F. Goodrich Company Photodefinable dielectric compositions
JPH10143098A (ja) * 1996-11-08 1998-05-29 Minnesota Mining & Mfg Co <3M> 自発光可能な再帰性反射シートおよび反射性標識
JP3477338B2 (ja) * 1997-03-06 2003-12-10 サンスター技研株式会社 有機分散型エレクトロルミネッセンス素子およびその発光層用組成物
EP0902048B1 (en) 1997-09-11 2005-11-23 E.I. Du Pont De Nemours And Company High dielectric constant flexible polyimide film and process of preparation
US6506438B2 (en) * 1998-12-15 2003-01-14 E Ink Corporation Method for printing of transistor arrays on plastic substrates
US6274224B1 (en) * 1999-02-01 2001-08-14 3M Innovative Properties Company Passive electrical article, circuit articles thereof, and circuit articles comprising a passive electrical article
US6184325B1 (en) * 1999-03-16 2001-02-06 Isp Investments Inc. Solvent-free, fine white powders of high molecular weight copolymers of maleic anhydride and a C1-C4 alky vinyl ether without odor or taste
US6265243B1 (en) * 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
GB2359385B (en) * 2000-02-16 2004-04-07 Data Connection Ltd Method for upgrading running software processes without compromising fault-tolerance
US6544651B2 (en) 2000-05-18 2003-04-08 Georgia Tech Research Corp. High dielectric constant nano-structure polymer-ceramic composite
US6586791B1 (en) * 2000-07-19 2003-07-01 3M Innovative Properties Company Transistor insulator layer incorporating superfine ceramic particles
US6433359B1 (en) * 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
WO2003028125A2 (en) 2001-09-27 2003-04-03 3M Innovative Properties Company Substituted pentacene semiconductors
US20030097010A1 (en) * 2001-09-27 2003-05-22 Vogel Dennis E. Process for preparing pentacene derivatives
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US6617609B2 (en) * 2001-11-05 2003-09-09 3M Innovative Properties Company Organic thin film transistor with siloxane polymer interface
US20030151384A1 (en) * 2002-02-12 2003-08-14 Woodward Richard C. 2-start, 4 pole single-phase motor
US20030151118A1 (en) * 2002-02-14 2003-08-14 3M Innovative Properties Company Aperture masks for circuit fabrication
US6897164B2 (en) 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462359B (zh) * 2006-10-20 2014-11-21 Nippon Kayaku Kk 場效電晶體及其製造方法

Also Published As

Publication number Publication date
US20040222412A1 (en) 2004-11-11
US7473652B2 (en) 2009-01-06
EP1620885A1 (en) 2006-02-01
WO2004102652A1 (en) 2004-11-25
EP1620885B1 (en) 2009-08-12
JP4668916B2 (ja) 2011-04-13
ATE439681T1 (de) 2009-08-15
US20060237717A1 (en) 2006-10-26
CN1784772A (zh) 2006-06-07
KR20060009320A (ko) 2006-01-31
JP2007538381A (ja) 2007-12-27
US7098525B2 (en) 2006-08-29
CN1813343A (zh) 2006-08-02
DE602004022534D1 (de) 2009-09-24

Similar Documents

Publication Publication Date Title
TW200505950A (en) Organic polymers electronic devices, and methods
WO2004102690A3 (en) Organic polymers, laminates, and capacitors
WO2008093831A1 (ja) ブロック共重合体並びにそれを用いた組成物、液状組成物、発光性薄膜及び高分子発光素子
TW200420538A (en) Carbazole compounds and use of such compounds in organic electroluminescent devices
TWI266147B (en) Novel photosensitive resin compositions
TW200506520A (en) Novel photosensitive resin compositions
KR100481124B1 (ko) 폴리히드록시알카노에이트의 제조에 이용되는 미생물
TW200736222A (en) Compound for electroluminescene element and producing method thereof
TW200736363A (en) Material for organic electroluminescent device and organic electroluminescent device
GB2496771A (en) Organic light-emitting material device and method
ATE391144T1 (de) Organopolysiloxan und dieses enthaltende härtbare silikonzusammensetzung
MX2011006373A (es) Compuestos de carbodiimida ciclica.
WO2008108405A1 (ja) ジフルオロシクロペンタンジオン環と芳香環との縮合したユニットを含む重合体、並びにこれを用いた有機薄膜及び有機薄膜素子
EP0825242A3 (en) Polymer fluorescent substance and organic electroluminescence device
ATE371684T1 (de) (teilweise) konjugiertes polymer, verfahren zu dessen herstellung und verwendung in elektrolumineszenten vorrichtungen
TW200704713A (en) Curable silicone composition and cured product therefrom
DE602009000575D1 (de) Thiazolothiazolderivate und organische elektronische vorrichtung damit
ATE517087T1 (de) Cbp-verbindung
ATE509055T1 (de) Verfahren zur polymerisation von thiophen- oder selenophenderivaten
TW200512543A (en) Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
YU80301A (sh) Novi aromatični amidi supstituisani ribozom, postupak za njihovo pripremanje i njihova primena kao medikamenata
TW200613346A (en) Organoantimony, manufacturing method thereof, active free radical polymerization initiator, polymer manufacture method using the same, and polymer
TW200631960A (en) Organic bismuth compound, preparing method thereof, living radical polymerization initiator, polymer preparation and polymer using the same
ATE344808T1 (de) Polycarbodiimid-copolymer und dessen herstellungsverfahren
TW200708533A (en) Arylamine polymer and organic thin film transistor