JP5652005B2 - 薄膜トランジスタおよびその製造方法、ならびに電子機器 - Google Patents
薄膜トランジスタおよびその製造方法、ならびに電子機器 Download PDFInfo
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- JP5652005B2 JP5652005B2 JP2010127896A JP2010127896A JP5652005B2 JP 5652005 B2 JP5652005 B2 JP 5652005B2 JP 2010127896 A JP2010127896 A JP 2010127896A JP 2010127896 A JP2010127896 A JP 2010127896A JP 5652005 B2 JP5652005 B2 JP 5652005B2
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- Prior art keywords
- monomer
- organic semiconductor
- insulating layer
- semiconductor layer
- gate insulating
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
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- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
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- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/02—Homopolymers or copolymers of hydrocarbons
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- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H10K85/649—Aromatic compounds comprising a hetero atom
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- C—CHEMISTRY; METALLURGY
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
- C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
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Description
1.薄膜トランジスタ
1−1.薄膜トランジスタの構成
1−2.薄膜トランジスタの製造方法
2.薄膜トランジスタの適用例(電子機器)
<1−1.薄膜トランジスタの構成>
図1は、本発明の一実施形態の薄膜トランジスタである有機TFTの断面構成を表している。
図2〜図7は、有機TFTの製造方法を説明するためのものであり、いずれも図1に対応する断面構成を示している。以下では、一連の構成要素の形成材料については既に説明したので、それらの説明を随時省略する。
上記した有機TFTおよびその製造方法によれば、有機半導体層6に隣接するゲート絶縁層3が架橋型共重合材料を含んでいる。これにより、ゲート絶縁層3の耐溶剤性および熱安定性が向上するため、有機TFTの製造工程でゲート絶縁層3が有機溶剤により溶解されにくくなると共に熱的ダメージを受けにくくなる。また、ゲート絶縁層3の緻密性が向上するため、絶縁耐圧が高くなる。よって、移動度およびオンオフ比などが向上するため、性能向上を図ることができる。
次に、上記した薄膜トランジスタ(有機TFT)の適用例について説明する。この有機TFTは、さまざまな電子機器に適用可能である。
ここで説明する液晶表示装置は、例えば、有機TFTを用いたアクティブマトリクス型駆動方式の透過型液晶ディスプレイであり、その有機TFTは、スイッチング(画素選択)用の素子として用いられる。この液晶表示装置は、図11に示したように、駆動基板20と対向基板30との間に液晶層41が封入されたものである。
この液晶表示装置では、有機TFT22により画素電極24が選択され、その画素電極24と対向電極32との間に電界が印加されると、その電界強度に応じて液晶層41(液晶分子)の配向状態が変化する。これにより、液晶分子の配向状態に応じて光の透過量(透過率)が制御されるため、階調画像が表示される。
この液晶表示装置によれば、有機TFT22が上記した薄膜トランジスタと同様の構成を有しているため、その有機TFT22の移動度およびオンオフ比が向上する。よって、表示性能を向上させることができる。
以下の手順により、ボトムゲート・ボトムコンタクト型の有機TFTを作製した。
第2単量体であるメタクリル酸グリシジルだけを用いて架橋型重合材料(ポリメタクリル酸グリシジル)を形成し、または、第1単量体であるα−メチルスチレンだけを用いて非架橋型重合材料(ポリ−α−メチルスチレン)を形成した。前者の場合には、重合材料と硬化剤と触媒との混合比(重量比)を100:10:1とし、後者の場合には、硬化剤および触媒を用いなかった。これ以外の手順は、実験例1〜3と同様である。
Claims (3)
- ゲート電極および有機半導体層と、それらの間に位置すると共に前記有機半導体層に隣接するゲート絶縁層とを備え、
前記ゲート絶縁層は、スチレンおよびその誘導体のうちの少なくとも一方である第1単量体と、炭素間二重結合および架橋性反応基を有する第2単量体とが共重合および架橋された材料を含み、
前記第1単量体は、α−メチルスチレン、α−エチルスチレン、α−ブチルスチレン、4−メチル−スチレンおよびそれらの誘導体のうちの少なくとも1種であると共に、
前記第2単量体は、アクリル酸グリシジル、メタクリル酸グリシジル、アリルグリシジルエーテルおよびそれらの誘導体のうちの少なくとも1種である、
薄膜トランジスタ。 - ゲート電極を形成する工程と、
有機半導体層を形成する工程と、
前記ゲート電極と前記有機半導体層との間に、スチレンおよびその誘導体のうちの少なくとも一方である第1単量体と、炭素間二重結合および架橋性反応基を有する第2単量体とが共重合および架橋された材料を含むと共に、前記有機半導体層に隣接するように、ゲート絶縁層を形成する工程と、
を含み、
前記第1単量体として、α−メチルスチレン、α−エチルスチレン、α−ブチルスチレン、4−メチル−スチレンおよびそれらの誘導体のうちの少なくとも1種を用いると共に、
前記第2単量体として、アクリル酸グリシジル、メタクリル酸グリシジル、アリルグリシジルエーテルおよびそれらの誘導体のうちの少なくとも1種を用いる、
薄膜トランジスタの製造方法。 - ゲート電極および有機半導体層と、それらの間に位置すると共に前記有機半導体層に隣接するゲート絶縁層とを含む薄膜トランジスタを備え、
前記ゲート絶縁層は、スチレンおよびその誘導体のうちの少なくとも一方である第1単量体と、炭素間二重結合および架橋性反応基を有する第2単量体とが共重合および架橋された材料を含み、
前記第1単量体は、α−メチルスチレン、α−エチルスチレン、α−ブチルスチレン、4−メチル−スチレンおよびそれらの誘導体のうちの少なくとも1種であると共に、
前記第2単量体は、アクリル酸グリシジル、メタクリル酸グリシジル、アリルグリシジルエーテルおよびそれらの誘導体のうちの少なくとも1種である、
電子機器。
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JP2010127896A JP5652005B2 (ja) | 2010-06-03 | 2010-06-03 | 薄膜トランジスタおよびその製造方法、ならびに電子機器 |
US13/108,428 US20110297920A1 (en) | 2010-06-03 | 2011-05-16 | Thin film transistor,method of manufacturing the same, and electronic device |
KR1020110049518A KR20110132978A (ko) | 2010-06-03 | 2011-05-25 | 박막 트랜지스터, 그 제조 방법 및 전자 기기 |
CN2011101415484A CN102270744A (zh) | 2010-06-03 | 2011-05-27 | 薄膜晶体管及其制造方法和电子设备 |
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CN103022356A (zh) * | 2012-12-27 | 2013-04-03 | 青岛艾德森能源科技有限公司 | 一种有机薄膜晶体管 |
EP2784839B1 (en) | 2013-03-26 | 2017-10-25 | Novaled GmbH | Method of manufacturing an organic field effect transistor |
KR101783420B1 (ko) | 2016-05-12 | 2017-10-11 | 한국화학연구원 | 박막 트랜지스터 절연막용 조성물, 이를 포함하는 절연막 및 유기박막 트랜지스터 |
US11326006B2 (en) | 2017-07-04 | 2022-05-10 | Sumitomo Chemical Company, Limited | Organic thin-film transistor and polymer compound |
CN110006966A (zh) * | 2019-04-26 | 2019-07-12 | 上海交通大学 | 一种检测多巴胺的非侵入式柔性传感器 |
KR102497680B1 (ko) * | 2020-09-22 | 2023-02-09 | 한국교통대학교 산학협력단 | 유기 절연층용 중합체 및 이를 포함하는 유기 박막 트랜지스터 |
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