CN103022356A - 一种有机薄膜晶体管 - Google Patents
一种有机薄膜晶体管 Download PDFInfo
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- CN103022356A CN103022356A CN2012105807291A CN201210580729A CN103022356A CN 103022356 A CN103022356 A CN 103022356A CN 2012105807291 A CN2012105807291 A CN 2012105807291A CN 201210580729 A CN201210580729 A CN 201210580729A CN 103022356 A CN103022356 A CN 103022356A
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Abstract
本发明提供一种有机薄膜晶体管,其包括柔性基板,形成在柔性基板上的薄膜晶体管,该薄膜晶体管包括栅极、栅极绝缘层、有源层、源极和漏极,其中有源层由有机材料构成。
Description
技术领域
本发明涉及一种有机薄膜晶体管。
背景技术
随着近年来新型显示技术的发展,各种用途的显示器件逐渐涌现,例如柔性显示器件,为满足这个显示器件的需要,柔性薄膜晶体管是其中的关键,其中使用有机物材料制造薄膜晶体管是解决这一关键问题的有效途径。
发明内容
本发明提供一种有机薄膜晶体管,其包括柔性基板,形成在柔性基板上的薄膜晶体管,该薄膜晶体管包括栅极、栅极绝缘层、有源层、源极和漏极,其中有源层由有机材料构成。
具体实施方式
下面结合具体实施例,进一步阐述本发明。应理解,这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解,在阅读了本发明讲授的内容之后,本领域技术人员可以对本发明作各种改动或修改,这些等价形式同样落于本申请所附权利要求书所限定的范围。
实施例1
该有机薄膜晶体管包括塑料基板,在塑料基板上形成有机薄膜晶体管,其中依次形成栅极、栅极绝缘层、有源层、源极和漏极,其中各层材料均为柔性材料,有源层为多聚芴为基础的均聚物,最后形成保护层。
实施例2
该有机薄膜晶体管包括树脂基板,在树脂基板上形成有机薄膜晶体管,其中依次形成栅极、栅极绝缘层、有源层、源极和漏极,其中各层材料均为柔性材料,有源层为多聚芴为基础的嵌段共聚物,最后形成保护层。
实施例3
有机薄膜晶体管包括金属薄膜基板,在金属薄膜基板上形成有机薄膜晶体管,其中依次形成栅极、栅极绝缘层、有源层、源极和漏极,其中各层材料均为柔性材料,有源层为聚-3-己基噻吩聚合物,最后形成保护层。
Claims (3)
1.一种有机薄膜晶体管,其包括柔性基板,形成在柔性基板上的薄膜晶体管,该薄膜晶体管包括栅极、栅极绝缘层、有源层、源极和漏极,其中有源层由有机材料构成。
2.如权利要求1所述的有机薄膜晶体管,其中有机材料为多聚芴为基础的均聚物、多聚芴为基础的嵌段共聚物或聚-3-己基噻吩聚合物。
3.如权利要求1所述的有机薄膜晶体管,其中柔性基板为塑料、树脂或金属薄膜。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1364323A (zh) * | 1999-06-21 | 2002-08-14 | 剑桥大学技术服务有限公司 | 用于有机薄膜晶体管的取向聚合物 |
CN101017782A (zh) * | 2006-02-08 | 2007-08-15 | 财团法人工业技术研究院 | 薄膜晶体管、有机电致发光显示元件及其制造方法 |
US20110297920A1 (en) * | 2010-06-03 | 2011-12-08 | Sony Corporation | Thin film transistor,method of manufacturing the same, and electronic device |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1364323A (zh) * | 1999-06-21 | 2002-08-14 | 剑桥大学技术服务有限公司 | 用于有机薄膜晶体管的取向聚合物 |
CN101017782A (zh) * | 2006-02-08 | 2007-08-15 | 财团法人工业技术研究院 | 薄膜晶体管、有机电致发光显示元件及其制造方法 |
US20110297920A1 (en) * | 2010-06-03 | 2011-12-08 | Sony Corporation | Thin film transistor,method of manufacturing the same, and electronic device |
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Application publication date: 20130403 |