TW200425446A - Lead frame structure with aperture or groove for flip chip in a leaded molded package - Google Patents

Lead frame structure with aperture or groove for flip chip in a leaded molded package Download PDF

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Publication number
TW200425446A
TW200425446A TW093109929A TW93109929A TW200425446A TW 200425446 A TW200425446 A TW 200425446A TW 093109929 A TW093109929 A TW 093109929A TW 93109929 A TW93109929 A TW 93109929A TW 200425446 A TW200425446 A TW 200425446A
Authority
TW
Taiwan
Prior art keywords
lead frame
die
mounting area
semiconductor die
frame structure
Prior art date
Application number
TW093109929A
Other languages
English (en)
Other versions
TWI363409B (en
Inventor
Rajeev Joshi
Chung-Lin Wu
Original Assignee
Fairchild Semiconductor
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Filing date
Publication date
Application filed by Fairchild Semiconductor filed Critical Fairchild Semiconductor
Publication of TW200425446A publication Critical patent/TW200425446A/zh
Application granted granted Critical
Publication of TWI363409B publication Critical patent/TWI363409B/zh

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    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Description

200425446 玖、發明說明： 【發明所屬之技術領域3 本發明係有關於一種用於在引線模組封裝中之倒裝片 之具有縫隙或溝槽的引線框架結構。 5 【先前技 發明背景 目前有許多種的半導體晶粒封裝體。包含有特殊引線 框結構和特殊汲極夾結構的低廓型封裝體曾被揭示於2002 年 10 月 14 曰由 Rajeev Joshi 與 Chung-Lin Wu 申請之 10 No.10/271,654美國專利申請案中，名稱為“在一引線成型封 裝體中之薄式熱加強的倒裝晶片”，其内容併此附送參考。 在該專利申請案中，有一個半導體晶粒會被焊劑固裝於一 引線框結構。一汲極夾會被連結於該晶粒的頂面。該晶粒 會被以一成型材料來包封。 15 雖該等半導體封裝體堪能供使用，但仍可再改良。例 如，一有待克服的問題係為焊劑接點的可靠性。當在處理 上述晶粒封裝體時，半導體晶粒會被以焊劑來固裝於引線 框。焊接點等會形成於該引線框和半導體晶粒之間。在各 焊接點之間及該晶粒和引線框之間的狹窄空間必須被填滿 20 該成型材料。其會難以用該成型材料來填滿該等狹窄空 間。假使該等空間未被以該成型材料來填滿，則空隙會形 成於該半導體晶粒封裝體内。該成型材料可能會不均勻， 此會在該等焊接點中造成應力，而可能致使它們破裂。另 一有待解決的問題係該引線框結構與成型材料之間的剝 5 離。假使該成型材料與引線框結構未能互相緊固黏接，則 它們可能會在經長時間後互相分開，而會增加該晶粒封裝 體故障的可能性。 本發明的實施例係能個別或整體地解決這些及其它問 題。 【發明内容】 發明概要 本發明的實施例係有關半導體晶粒封裝體，及半導體 晶粒封裝體的引線框結構，和製造半導體晶粒封裝體的方 法。 本發明之一貫施例係為一種半導體晶粒封裝體，包 含·（a)半導體晶粒含有一第一表面與一第二表面；（…一 引線框結構包含一晶粒安裝區及多數的引線由該安裝區延 伸離開，且該晶粒安裝區含有一或多個縫隙延伸穿過該安 裝區並呈垂直於該等引線的走向，而該半導體晶粒係被固 叹在讜引線框結構的晶粒安裝區上；及(c)一成型材料係至 少包圍該引線框結構之晶粒安裝區和該半導體晶粒的一部 份，且該成型材料亦會灌入該引線框結構之晶粒安裝區的 —或多縫隙中。 本發明的另一實施例係為一引線框結構，包含：一晶 粒安裝區；多數的引線由該安裝區延伸離開；及一或多個 縫隙设在該安裝區中並延伸貫穿該晶粒安裝區，且該一或 多個縫隙係呈垂直於該等引線的走向。 本發明的又另一實施例係為一種用來製造半導體晶粒 封裝體的方法，包含：（a)用焊劑將一具有一第一表面與一 第二表面的半導體晶粒固裝於一引線框結構的晶粒安裝區 上，該引線框結構包含一或多個縫隙延伸貫穿該安裝區， 並有多數的引線由該安裝區延伸離開，且該一或多個縫隙 係呈垂直於該等引線的走向；及(b)成型一成型材料來至少 部份地包圍該半導體晶粒和該晶粒安装區，並使該成型材 料注入該引線框結構之晶粒安裝區的一或多個縫隙中。 本發明之再另一實施例係為一種半導體晶粒封裝體， 包δ · (a) —半導體晶粒具有一第一表面和一第二表面；（b) 一引線框結構包含一晶粒安裝區及多數的引線由該安裳區 延伸離開，且該晶粒安裝區中含有一或多數的溝槽，而該 半導體晶粒係被使用焊劑固裝在該引線框結構的晶粒安裝 區上，該焊劑係被設於該一或多數溝槽中；及(c)一成型材 料至少包圍該引線框結構的晶粒安裝區和該半導體晶粒的 一部份。 本發明之這些及其它的實施例會更詳細說明於後。 圖式簡單說明 第1(a)圖示出設在一引線框結構上之半導體晶粒的頂 視圖。 第1(b)圖示出設在一引線框結構上之半導體晶粒的側 視圖。 第2(a)圖示出設在一引線框結構上之半導體晶粒的頂 視圖。 弟2(b)圖不出设在一引線框結構上之半導體晶粒的頂 200425446 視圖。 第3(a)〜3(1)圖示出半導體晶粒與引線框結構被製成一 半導體晶粒封裝體之各種視圖。 第4 (a)〜4 (b)圖示出半導體晶粒與引線框結構被覆設成 5 型材料的狀態。 第4(c)圖為一被安裝於引線框上的半導體晶粒在成型 後的截面圖。 第4(d)圖示出一具有局部裂缝之焊劑凸體的截面圖。 第5(a)圖示出一引線框結構的頂視圖。 10 第5(b)圖示出第5(a)圖中之引線框結構沿5(b)-5(b)線的 側視截面圖。 第6(a)圖示出一具有槽狀孔隙與溝槽等之引線框結構 的立體圖。 第6(b)圖示出一固裝著半導體晶粒之引線框結構的立 15 體圖。 第7圖示出一銅柱位在一被安裝於引線框結構之半導 體晶粒上的示意圖。 第8圖示出一表其數據代表本發明之實施例的可靠性。 在第1〜8圖中，相同的標號係指相同的元件。 20 【實施方式】 詳細說明 本發明的貫施例係有關引線框結構’半導體晶粒封裝 體，及用來製造半導體晶粒封裝體的方法。該半導體晶粒 封裝體可包含一個半導體晶粒被例如用焊劑來固裝在一引 8 200425446 線框結構上。若該半導體晶粒係為一垂向電晶體，則該半 導體晶粒封裝體可具有一汲極夾或其它的導電結構連接於 該半導體晶粒，來將汲極電流由該半導體晶粒的一側導至 其另一側。一成型材料會覆蓋該半導體晶粒與引線框結構 . 5 的至少一部份。 使用於本發明較佳實施例之半導體晶粒封裝體的半導 ' 體晶粒包含垂向功率電晶體。垂向功率電晶體之例曾被揭 · 於No. 6,274,905及No. 6,351，018美國專利案中，此二案皆被 · 讓渡給本申請案的相同受讓人，其内容併此附送參考。垂 10 向功率電晶體包括VDMOS電晶體。一VDMOS電晶體係為 一種MOSFET其具有二或更多藉擴散製成的半導體區域。 其具有一源極區，一汲極區，與一閘極。該裝置係呈垂向 ' 的’其中該源極區和〉及極區係在該半導體晶粒的相反兩面 上。該閘極可為一溝槽閘極結構或一平面閘極結構，而被 15 設在源極區的相同表面上。溝槽式閘極結構會較佳，因為 其係較窄而會比平面閘極結構佔用較少的空間。當操作 讀| 時，在一 VDMOS裝置中電流會由源極區流向汲極區，而呈 垂直於該晶粒表面。 於此所述之“引線框結構”係指一由引線框衍生而成的 20 結構。一典型的引線框結構包含一源極引線結構，一閘極 - 引線結構，及一可擇的虛設引線結構。該引線框結構的各 ， 部份會被詳細說明於後。該等源極引線結構、閘極引線結 構、及虛設引線結構會各具有一或多數的引線。 第1(a)圖示出一半導體晶粒118設在一引線框結構104 9 200425446 上。該引線框結構104包含一閘極引線結構110，及一源極 引線結構106。該閘極引線結構no包含一閘極引線110(&)， 而源極引線結構106包含七個源極引線i〇6(a)〜i〇6(g)等。本 例示出七個源極引線和一個閘極引線。 5 一陣列的焊接點123位在該半導體晶粒118與引線框結 構104之間，而會將它們電連接及機械連結。該焊接點123 陣列包含多數的源極焊接點122與一閘極焊接點124，它們 會將該半導體晶粒118中之一 MOSFET的源極區和閘極區 分別接合於閘極引線結構110和源極引線結構106。 10 該引線框結構104具有一晶粒安裝區130，其上可供固 裝該半導體晶粒118。該晶粒安裝區130可為不連續的，且 可包含該閘極引線結構110的内部，及源極引線結構106的 内部。有許多的孔隙132設在該晶粒安裝區130中，並有一 孔隙132設在該安裝區130外側。各孔隙132皆會完全貫穿該 15 引線框結構104的晶粒安裝區130。在本例中，該等孔隙132 係呈長槽隙狀。該各槽狀孔隙132會平行於各源極引線 106(a)〜106(f)和閘極引線110(a)的走向。各孔隙132亦會被 設在焊接點陣列123的相鄰各排焊接點之間。如第1(a)圖中 所示，該半導體晶粒118會被裝設在至少若干孔隙132上方。 20 如後所詳述，該等焊接點123亦可呈多數的溝槽（未示 於第1(a)圖中）來設在該引線框結構106中。該等溝槽係可為 平行於該等孔隙132的細長溝槽。 其它的接點亦可取代該等焊接點123來被使用。例如， 以線結方法(如在美國專利No· 5,633,204中所揭者，其内容 10 200425446 併此附送）所製成的導電柱等亦可被用來取代或附加於該 專焊接點123。该導電柱可包括銅。又如在2〇〇1年6月15日 所申清之No· 09/881，787美國專利申請案中所揭的導電柱 亦能被使用。該申請案亦由本案發明人所申請者，其内容 5 併此附送。 · 第1 (b)圖示出該半導體晶粒118設在一半導體晶粒封裝 · · 體中的引線框結構104上。該晶粒118具有一第一表面;Qg(a) · 罪接於該引線框結構104，及一第二表面118(b)遠離該引線 · 框結構104。該第二表面118(b)在該晶粒118中乃相當於一 10 MOSFET的沒極區，而該MOSFET的源極區和閘極區則相當 於該晶粒118的第一表面118(a)。 一成型材料160會包圍並覆蓋該半導體晶粒ιι8的至少 - 一部份，及該引線框結構104之晶粒安裝區130的至少一部 份。源極引線106(d)、106(e)等會由該成型材料160側向地 15 伸出離開。在本例中，該成型材料160會完全地包覆該晶粒 安裝區130及焊接點陣列123。該成型材料160會填滿該安裝 · 區130内的孔隙132，及該晶粒118與引線框結構104之間的 空隙。在本例中該成型材料160不會覆蓋該晶粒118的第二 表面118(b)。該第二表面118(b)與該半導體晶粒118中之 20 M0SFET的汲極區將會透出該成型材料16〇而曝現，因此該 · 沒極區能連接於一汲極夾21〇。該汲極夾210可形成一導電 路徑，由該MOSFET的汲極區引至該引線框結構104另一面 上的電路板(未示出）。在第1(b)圖中所示的整個晶粒封裝體 會很薄而具有良好的散熱性質。低廓型封裝體，特定的引 11 200425446 線框結構及特定的没極夾結構等，曾被揭示於2〇〇2年1〇月 14曰申請的No· 10/271,654美國專利申請案，名稱為“在_ 引線成型封裝體中之薄式熱加強的倒裝晶片，，係由Rajeev Joshi及Chung-Lin Wu等人提出申請，其内容併此附送。其 5中所揭的任何特徵細構皆可被使用於本發明的實施例中。 该成型材料160可包含任何適當的材料。適當的成型材 料包括聯苯類材料，及多官能基的交鏈環氧樹脂複合材 料。一材料例為Plaskon AMC2-RC成型樹脂，其可由Ge〇rgia 州 Alpharetta 的 Cookson Electronics 公司購得。 10 第2(a)圖示出一半導體晶粒118藉由一陣列的焊接點 123來固裝在一引線框結構14〇上。在本例中，該引線框結 構140包含一閘極引線結構11〇具有一閘極引線n〇(a)，及一 源極引線結構106具有三個源極引線106(a)〜106(c)，與一虛 設引線結構140具有四個虛設引線14〇(a)〜14〇(d)。該虛設引 15線結構140並不電連接於該晶粒118，但會提供該晶粒封裝 體的結構支撐。繫桿142等會被設在該源極引線結構1〇6 上。當在處理時’該等繫桿142會將該引線框結構140連接 於一引線框結構陣列中的其它引線框結構。 第2(a)圖中，該等孔隙132亦為槽孔。各槽狀孔隙I% 20的走向係垂直（即呈約9〇。)於各引線106(a)〜106(c)、110(a)、 140(a)〜140(d)的方向。又，在本例中，至少有二孔隙132係 呈末端相對地排列。該等孔隙132可具有任何適當的尺寸或 間距。例如，該各縫隙可為大約〇 2mm寬，及約i 〇mm長， 且各孔隙的間距可約為〇.7min。在另一例中，各孔隙可約 12 200425446 為0.2mm寬及約1.8mm長。 如後所詳述，該等焊接點123亦可呈多數的溝槽（未示 於第2(a)圖中）來形成於引線框結構106中。該等溝槽可為細 長溝槽而平行於孔隙132等。 5 在第2(b)圖中，該等孔隙132亦呈長槽狀，但係平行於 各引線106(a)〜106(c)、110(a)、140(a)〜140(d)的走向。惟， ’ 不同於第1圖所示的引線框結構，在第2(b)圖中所示的引線 · 框結構104係具有一虛設引線結構140。 φ 用來製造一晶粒封裝體的方法將以第3(a)〜3(1)圖來說 10 明。 請參閱第3(a)與3(b)圖’ 一引線框結構1〇4會被製成。 該等引線框結構能例如以一沖壓製法（習知技術）來製成。該 — 引線框結構亦能將一連續導電薄片姓刻成預定圖案來製 成。但若使用沖壓法’則該引線框可原為在一以繫桿來連 15 接在一起之引線框陣列中的許多引線框之一者。當在製造 一半導體封裝物的過程中，該引線框陣列可被切割而使該 修 等引線框互相分開。由於切割的結果，在一最終半導體晶 粒封裝體中之一引線框結構的某些部份，例如一源極引線 與一閘極引線可能會互相電斷接及機械性分離。故，在一 20晶粒封裝體中的引線框結構可能為一連續的金屬結構或一 不連續的金屬結構。 产 該引線框結構104包含多數的孔隙132。該等孔隙132 能用任何適當的方法來製成，包括沖壓、蝕刻（濕式或乾式） 等。在製成該等孔隙132之前或之後，該引線框結構1〇4可 13 200425446 被塗佈一或多層材料。例如，該引線框結構;[〇4可包含一基 礎金屬例如銅或銅合金。該基礎金屬可被塗覆一或多數疊 合的冶金層。例如，NiPd可被預鍍在一銅引線框上。該引 線框結構的總厚度係可改變。例如，在某些實施例中，該 5引線框結構的厚度可約為8 mils厚（或更大或更小於此）。 如後所詳述，該焊劑123亦可呈一溝槽（未示於第3(b) 圖中）來設在該引線框結構104中。該等溝槽可為細長溝槽 而平行於孔隙132等。 在該引線框結構104被製成後，焊劑123可被佈設在該 10結構1〇4的晶粒安裝區130上。該焊劑123可包括例如 88Pd/10Sn/2Ag或95Pb/5Sn(依據該焊劑之金屬重量百分比) 的焊膏。該焊劑123會被佈設在孔隙132周圍。該焊劑可用 任何適當的習知方法，包括取放法、模罩法、電鍍等來被 佈設在該引線框結構104上。 15 請參閱第3(c)和3(d)圖，在焊劑123被沉積在該引線框 結構104上之後，有一半導體晶粒;會被固設在安裝區13〇 上。一“倒裝晶片”安裝製程可被使用。因此，該晶粒118乃 可被焊劑焊接固設。可另擇或附加地，該半導體晶粒上亦 可設有銅柱，如Rajeev Joshi與Chung-Lin Wu於2001年6月15 2〇曰所申請之Ν〇· 09/881，787美國專利申請案，名稱為“含有 導電柱的半導體晶粒，，，或於美國專利Ν〇·5,633,204中所揭 者。該兩案的内容併此附送參考。如第3(d)圖中所示，該半 導體晶粒118的第二表面118(b)會背向該引線框結構1〇4。 現請參閱第3(e)和3(f)圖，當將晶粒118安裝在引線框 14 200425446 104上之後’該焊劑123可被重流來形成焊接點123。焊劑重 流製程係為習知技術。 現請參閱第3(g)和3(h)圖，在焊劑重流步驟之後，即可 進行一成型步驟。在某些實施例中，一黏帶輔助的成型法 5可被用來使成型材料成型包圍該半導體晶粒、閘極引線結 構、及源極引線結構等。例如，一黏帶可被貼抵在第3(e) 及3(f)圖所示之封裝體前身物的晶粒118之第二表面118(b) 上。嗣，該組合物會被置入一成型穴中，其内會被注入成 型材料。該成型材料不會覆蓋該晶粒118的第二表面 10 118(b)，或該引線框結構之引線的朝外部份。嗣該黏帶可由 該晶粒的背面被除去，而使該晶粒背面曝露於成型材料 外。一黏帶輔助成型法會進一步參照第4(約及4(…圖來說明 於後。 如圖所示，一成型材料160會被覆設在該晶粒118及該 15引線框結構104的晶粒安裝區130的一部份上。如第3(g)圖所 示，一源極引線106(e)與一閘極引線110(幼會由已成型的材 料160側向地伸出。如第3(h)圖所示，會有些過多的成型材 料102殘存在該晶粒IIS的第二表面118(b)上。 请參閱第3(i)和3(j)圖，在該成型材料被成型之後，隔 20絕、切齊及除毛邊的程序將可被進行。切齊及除毛邊在該 領域中係為習知者，乃可被用來除掉過多的成型材料。如 在第3⑴圖中所示，一噴水柱164能被用來由該晶粒118的第 二表面118(b)上除去過多的成型材料。在一隔絕程序中，如 第3(1)圖所示，對该閘極引線n〇(a)的連接會被切斷，而來 15 200425446 電隔離該引線框結構104中的閘極引線和源極引線，以供後 續的電測試。 請參閱第3(k)和3(1)圖，在除毛邊、切齊與隔絕之後， 一電測試器166會被用來電測試所製成的晶粒封裝體1〇〇。 5假使該晶粒封裝體100通過該電測試，則其它各源極引線 106(a)〜106(g)亦可被互相分開。 如上所述’該引線框結構在晶粒安裝區設有孔隙。將 孔隙設在晶粒安裝區中具有許多優點。第一，該成型材料 可穿過該等孔隙來容易地流入該等焊接點之間的區域，而 10連接該引線框結構和半導體晶粒。當該成型材料完全滲入 該等焊接點之間，及該引線框結構與半導體晶粒之間的區 域中時’則該等狹窄的空間内將會填滿該成型材料。若該 成型材料能完全包封該等焊接點，則該等焊接點上的壓力 將會減少。此將能減低該等焊接點在歷久之後導致斷裂及 15失效的可能性。第二，當該成型材料注入該等孔隙中而固 化後，該固化的成型材料將會“鎖固，，於該引線框結構，故 會減少该引線框結構與成型材料剝離的可能性。 在該引線框結構的晶粒安裝區中形成槽狀孔隙將會較 佳。該等槽隙能減少焊接點失效的可能性。例如，請參閱 20第4(a)圖’當成型時，一引線框結構104與一半導體晶粒118 會被置入一具有兩個成型模的成型裝置18〇中。該晶粒118 會被雙面膠帶188固貼於上成型模。該引線框結構1〇4具有 一源極引線結構106和一虛設引線結構14()，它們並未機械 式連接在一起。在該成型過程中，該等成型模會閉合如第 16 200425446 4(b)圖所示，並會在該引線框結構140中造成一75 am的“壓 入’’(D)，以確保該二成型模已閉合，且成型材料不會逸出 關閉的成型模。由於被壓入的結果，故該源極引線框106和 半導體晶粒118的組合物會形如一懸桿，而會撓曲。此撓曲 5 會造成一焊接點的破裂’如弟4(c)和4(d)圖所示。為減少該 撓曲及增加該引線框結構104的剛性，該等槽狀孔隙132可 被製成垂直於該引線框結構中之引線的走向（如第2(a)圖中 所示）。 該等槽狀孔隙亦可被定向成平行於該引線框結構中的 10 引線方向。此在當該引線框結構沒有虛設引線，但在相反 側上具有源極引線(如第1(a)圖所示）時可能會較佳。請再參 閱第4(a)圖，若該虛設引線140係為功能性源極引線，如同 第1(a)圖中的源極引線106(f)時，則在第4(a)圖中所示的二 引線將會機械式連結在一起，如同第1(a)圖中所示的引線框 15 結構1〇6。在此情況下，於成型過程中，當該上模關閉時， 該引線框結構可能會太剛硬，故最好能有點撓性來減少該 晶粒118和引線框結構1〇4間之焊接點上的應力。一較可撓 的引線框結構104能藉將槽狀孔隙定向成平行於該引線框 結構中之引線的方向（如第1(a)圖中所示）而來形成。 20 因此，該引線框結構可由一單元(例如一引線框結構具 有一晶粒固接墊和七個源極引線），或亦可由二單元(例如一 單元具有三個源極引線及一第二單元具有虛設引線）來構 成。該晶粒固接墊(DAP)(或晶粒安裝區）可具有不同的特徵 細構。例如，針對一有七個源極引線的引線框結構（一單 17 200425446 元），則在該晶粒固接墊中的孔隙會對引線呈〇。來定向。針 對一有二個源極引線的結構(二單元），則在該晶粒固接墊中 的孔隙可對各引線呈90。來定向。在此二例中，溝槽（如後 所述）亦可被設在晶粒固接墊中。 5 第5(a)〜5(b)圖示出本發明另一實施例的引線框結構。 該引線框結構104具有一晶粒安裝區13〇與多數的源極引線 106(a)〜106(c)和一閘極引線110(a)等會由該晶粒安裝區13〇 伸出遠離。該晶粒安裝區130具有多數的槽狀孔隙132設於 其中。有多數的溝槽190各分別設在相鄰的孔隙132之間。 10該等溝槽190能承接容納焊劑，該焊劑係被用來將該半導體 晶粒（未示於第5(a)〜5(b)圖中）機械式及電連接於該引線框 結構者。 該等溝槽190可具有任何適當的深度、長度、或寬度。 例如，一溝槽可為50# m深（或更少）(如第5(b)圖中的“T”， 15約〇.3mm寬（或更大)(如第5(a)圖中的“L2”），及大於1mm的長 度(如第5(a)圖中的“IV’）。溝槽的中心線可與一晶粒上的焊 接凸體重合，該晶粒會被固設在晶粒安裝區上。該等溝槽 190可遍佈整個晶粒安裝區，或僅設在該安裝區之一特定部 份上。 20 第6(a)圖示出第5(a)與5(b)圖中所示之該類型引線框結 構104的立體圖。第6(b)圖示出一半導體晶粒118固設在第 6(a)圖之引線框結構104上的立體圖。當將晶粒118固設在該 引線框結構104之後，其組合物將可被進一步地處理，如前 所述(例如成型、切齊、除屑、測試等）。 18 在第5(a)〜5(b)、6(a)〜6(b)圖中所示的實施例會具有其 匕的優點。例如，若該半導體晶粒118底面上具有銅凸點 時，則該等高硬度的銅凸點將會固結引線框結構上的焊 刻’而形成一 15 # m的黏接線厚度（例如第7圖中的厚度 5 T2” ’其中示出在引線框結構104上的焊劑4〇〇包圍一固接
於半導體晶粒118上的銅柱）。此細薄的黏接線厚度在高壓 成型製程時可能剝離。其亦會在該銅凸點與焊劑的介面， 及該焊劑與引線框結構的介面來產生較高的熱應力。該等 溝槽可供用來控制固接該晶粒的焊劑厚度，並可容許使用 1〇較多的焊劑。該等溝槽亦可提供一已知的重複圖案，而在 倒裝晶片製程中將一具有凸點的晶粒對齊平設於一引線框 結構。故，該等溝槽亦能有利地作為對準排列記號。 第8圖為一表，乃示出施加於本發明各實施例的不同測 試結果。該各被測試的樣品係呈三個源極引線結構並有孔 15隙垂直於該等引線(如第2(a)圖所示）。
在該表中之各直排表示不同的分類編號和樣品類型。 在各橫行中，“單元級，，意指以封裝體級來測試，而“板級 意指在安裝之後以板級來測試。“ACLV”意指在^ psig，⑽相對溼度，和前置處理W(第一級)時的增^ 20測试。“TMCL”意指在-65至150°C的溫度循塄 ° ^ , 衣’ 15分鐘俜 留，及前置處理L-l(第一級）。在“板級，，的“T]Vlc 匕
1糸才曰_ 1C 至100°C的溫度循環，及15分鐘停留。“PRCL，，係护在。 的功率循環，2分鐘開，及2分鐘關。在該表中 ° 小才虞， “0/79”代表79個樣品在所示測試完成後沒有—個失敗因 19 200425446 此，本發明的貫施例在相關的測試條件下是可靠的。該等 測試條件係被詳揭於JEDEC標準JESD22-A102-C中（加速之 水分無偏阻抗的增壓鋼），EIA/JEDEC標準JESD22-A113-B 中（非密封表面安裝元件在可靠度測試之前的前置處理）； 5 JEDEC標準JESD22-Al〇4-B中（溫度循環）；&mA/JEDEC標 準EIA/JESD22-A105-B中（測試方法A1〇5-B，功率及溫度循 環）。於此所揭之該各公開資料及任何專利或專利申請案皆 併此附送提供參考。 以上描述内容係作為說明而非限制，且所述各特徵結 1〇構或其彳伤並不排除另有等效結構，故應可瞭解在本發 明的申請專利範圍中可有各種修正變化。例如，雖槽狀孔 隙曾被詳細說明’但在某些實施例中圓孔亦可被單獨使 用，或與該等槽狀孔隙來組合應用。而且，任何實施例的 一或多個特徵亦能與任何其它特定實施例的_或多個特徵 15來結合組構亦不超出本發明的範圍。 【圖式簡單贺^明】 第1⑷圖示出設在-引。c線框結構上之半導體晶粒的 頂視圖。 第1(b)圖示出設在一引線框結構上之半導體晶粒的側 20 視圖。 第2(a)圖示出設在—引線框結構上之半導體晶粒的頂 視圖。 第2(b)圖示出設在—引線框結構上之半導體晶粒的頂 視圖。 20 200425446 、第3⑷3(1)圖不出半導體晶粒與引線框結構被製成一 半導體日日粒封裝體之各種視圖。 第4⑷4(b)圖不出半導體晶粒與引線框結構被覆設成 型材料的狀態。 5 帛4_為-被安裝於？I線框上的半導體晶粒在成型 後的截面圖。 $ ()圖7F出—具有局部裂縫之焊劑凸體的截面圖。 第（）图示出一弓I線框結構的頂視圖。 第⑼圖不出第5⑷圖中之引線框結構沿5(b)-5(b)線的 10 側視截面圖。 第6 (a)圖不出_具有槽狀孔隙與溝槽等之引線框 的立體圖。 ()圖示出固裝著半導體晶粒之引線框結構的立 體圖。 15 第7圖示出—細/上丄 鋼桂位在一被安裝於引線框結構之半導 體晶粒上的示意圖。 第圖示ii表其數據代表本發明之實施例的可靠性。 【囷式之主要元件代表符號表】 118···半導體晶粒 118a…第一表面 118b…第二表面 122…源極焊接點 123…焊接點 124…閘極焊接點 100…晶粒封裝體 104…引線框結構 106···源極引線結構 106a〜g···源極弓丨線 110···閘極引線結構 110a···閘極引線 21 200425446 130···晶粒安裝區 164…喷水柱 132…孔隙 166…測試器 140···虛設引線結構 180…成型裝置 140a〜d…虛設引線 188…雙面膠帶 142…繫桿 190…溝槽 160…成型材料 210…汲極夾 162…過多的成型材料 400…焊劑

Claims (1)

  1. 200425446 拾、申請專利範圍： 1. 一種半導體晶粒封裝體，包含： (a) —半導體晶粒具有一第一表面及一第二表面； (b) —引線框結構含有一晶粒安裝區及多數的引線 个 5 由該晶粒安裝區伸出，而該晶粒安裝區包含一或多個孔 % 隙延伸貫穿該安裝區，並被定向成垂直於該等引線的走 ^ 向，且該半導體晶粒係被固裝在該引線框結構的晶粒安 · 裝區上；及 φ (c) 一成型材料會包圍該引線框結構和半導體晶粒 10 的至少一部份，且該成型材料亦會注入該引線框結構之 晶粒安裝區中的一或多個孔隙内。 2. 如申請專利範圍第1項之半導體晶粒封裝體，其中該晶 ‘ 粒安裝區包含至少二孔隙端部相對地排列。 3. 如申請專利範圍第1項之半導體晶粒封裝體，其中該引 15 線框結構包含一源極引線結構具有多數的源極引線，該 等源極引線會由該成型材料側向地伸出。 · 4. 如申請專利範圍第1項之半導體晶粒封裝體，其中該引 線框結構包含一源極引線結構，一閘極引線結構，及一 虛設引線結構。 20 5.如申請專利範圍第1項之半導體晶粒封裝體，其中該半 ： 導體晶粒包含一汲極區位於第二表面，及一源極區和一 . 閘極區位於第一表面，且該引線框結構包含一源極引線 結構連接於源極區，並含有多數的源極引線會由該成型 材料側向地伸出，及一閘極引線結構連接於閘極區而含 23 200425446 有一閘極引線由該成型材料側向地伸出，且該半導體晶 粒封裝體更包含一汲極夾連接於該半導體晶粒的汲極 區。 6. 如申請專利範圍第1項之半導體晶粒封裝體，其中該半 5 導體晶粒包含一汲極區位於第二表面，及一源極區和一 閘極區位於第一表面，且該晶粒更包含一汲極夾連接於 该晶粒的〉及極區。 7. 如申請專利範圍第1項之半導體晶粒封裝體，其中該等 孔隙係呈長槽狀。 10 8.如申請專利範圍第1項之半導體晶粒封裝體，其中該引 線框結構包含銅或銅合金。 9. 如申請專利範圍第1項之半導體晶粒封裝體，其中該晶 粒安裝區更包含多數的溝槽設在該引線框結構中。 10. 如申請專利範圍第9項之半導體晶粒封裝體，其中該引 15 線框結構包含銅或銅合金。 11. 一種引線框結構，包含： 一晶粒安裝區， 多數的引線會由該晶粒安裝區伸出，及 一或多數的孔隙設在該晶粒安裝區中並延伸貫穿 20 該安裝區，且該等孔隙係被定向成垂直於該等引線的走 向。 12. 如申請專利範圍第11項之引線框，其中該等孔隙係呈長 槽狀。 13. 如申請專利範圍第11項之引線框，其中該等孔隙係呈長 24 200425446 槽狀’且至少有二該等長槽孔隙會端部相對地排列。 14.如申請專利範圍第11項之引線框，更包含多數的溝槽設 在該晶粒安裝區中。 15· —種製造半導體晶粒封裝體的方法，包含： 5 (a)將一含有一第一表面與一第二表面的半導體晶 粒用焊劑來固裝在一引線框結構的晶粒安裝區上，該引 線框結構包含一或多數的孔隙會延伸貫穿該安裝區，及 多數的引線會由該安裝區伸出，且該等孔隙係被定向成 垂直於該等引線的走向；及 10 (b)成型一成型材料來至少部份地包圍該半導體晶 粒和晶粒安裝區，且該成型材料會注入該引線框結構之 晶粒安裝區的一或多個孔隙内。 16.如申請專利範圍第15項之方法，其中該半導體晶粒包含 一垂向功率MOSFET。 15 17.如申請專利範圍第15項之方法，其中該引線框結構包含 鋼。 18. 如申請專利範圍第15項之方法，其中該等孔隙係呈長槽 狀，且至少有二該等長槽孔隙會端部相對地排列。 19. 如申請專利範圍第項之方法，其中該引線框結構包含 20 鋼或銅合金。 20· —種半導體晶粒封裝體，包含： (a) —半導體晶粒具有一第一表面及一第二表面； (b) —引線框結構包含一晶粒安裝區並有多數的引 線由該安裝區伸出，且該晶粒安裝區中含有一或多數溝 25 200425446 槽。而該半導體晶粒係被以佈設在該等溝槽中的焊劑來 固裝在引線框結構的晶粒安裝區上；及 (C)一成型材料包圍該引線框結構的晶粒安裝區和 半導體晶粒的至少一部份。 5 21.如申請專利範圍第20項之半導體晶粒封裝體，其中該晶 粒安裝區包含至少一孔隙延伸貫穿該安裝區。 22. 如申請專利範圍第21項之半導體晶粒封裝體，其中該孔 隙係呈長槽狀，並被定向成垂直於該等引線。 23. 如申請專利範圍第21項之半導體晶粒封裝體，其中該孔 10 隙係呈長槽狀，並被定向成平行於該等引線。
    26
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CN1969383A (zh) 2007-05-23
US20050133893A1 (en) 2005-06-23
US6867481B2 (en) 2005-03-15
US7525179B2 (en) 2009-04-28
TWI363409B (en) 2012-05-01
US20040201081A1 (en) 2004-10-14
JP2007524999A (ja) 2007-08-30
DE112004000564T5 (de) 2006-03-23
WO2004093128A3 (en) 2006-08-03
US7081666B2 (en) 2006-07-25
WO2004093128A2 (en) 2004-10-28
CN1969383B (zh) 2012-07-04

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