TW200423389A - Manufacturing method of solid-state photographing apparatus - Google Patents

Manufacturing method of solid-state photographing apparatus Download PDF

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Publication number
TW200423389A
TW200423389A TW092126171A TW92126171A TW200423389A TW 200423389 A TW200423389 A TW 200423389A TW 092126171 A TW092126171 A TW 092126171A TW 92126171 A TW92126171 A TW 92126171A TW 200423389 A TW200423389 A TW 200423389A
Authority
TW
Taiwan
Prior art keywords
solid
manufacturing
molded body
wiring
carrier tape
Prior art date
Application number
TW092126171A
Other languages
English (en)
Chinese (zh)
Other versions
TWI309084B (https=
Inventor
Masanori Nano
Atsushi Horiki
Tetsushi Nishio
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of TW200423389A publication Critical patent/TW200423389A/zh
Application granted granted Critical
Publication of TWI309084B publication Critical patent/TWI309084B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
TW092126171A 2003-04-28 2003-09-23 Manufacturing method of solid-state photographing apparatus TW200423389A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003123842A JP3729817B2 (ja) 2003-04-28 2003-04-28 固体撮像装置の製造方法

Publications (2)

Publication Number Publication Date
TW200423389A true TW200423389A (en) 2004-11-01
TWI309084B TWI309084B (https=) 2009-04-21

Family

ID=32985561

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092126171A TW200423389A (en) 2003-04-28 2003-09-23 Manufacturing method of solid-state photographing apparatus

Country Status (7)

Country Link
US (1) US6864117B2 (https=)
EP (1) EP1473775B1 (https=)
JP (1) JP3729817B2 (https=)
KR (1) KR100576765B1 (https=)
CN (1) CN100401522C (https=)
DE (1) DE60316664T2 (https=)
TW (1) TW200423389A (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4180537B2 (ja) * 2003-10-31 2008-11-12 シャープ株式会社 光学素子の封止構造体および光結合器ならびに光学素子の封止方法
JP4324081B2 (ja) * 2004-11-22 2009-09-02 パナソニック株式会社 光学デバイス
JP4196937B2 (ja) * 2004-11-22 2008-12-17 パナソニック株式会社 光学装置
JP4290134B2 (ja) * 2005-03-14 2009-07-01 パナソニック株式会社 固体撮像装置と固体撮像装置の製造方法
JP4595835B2 (ja) * 2006-03-07 2010-12-08 株式会社日立製作所 鉛フリーはんだを用いたリード付き電子部品
KR100747610B1 (ko) * 2006-04-06 2007-08-08 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP2008243869A (ja) * 2007-03-26 2008-10-09 Tdk Corp 受光装置
JP4766435B2 (ja) * 2008-07-24 2011-09-07 Ｓｍｋ株式会社 カメラモジュール用台座の製造方法
JP4693909B2 (ja) * 2009-02-05 2011-06-01 パナソニック株式会社 固体撮像装置とその製造方法
JP5489543B2 (ja) * 2009-06-09 2014-05-14 キヤノン株式会社 固体撮像装置
CN103579277B (zh) * 2013-11-14 2016-02-03 华进半导体封装先导技术研发中心有限公司 基于倒装图像传感器芯片的封装结构和封装方法
US9666730B2 (en) 2014-08-18 2017-05-30 Optiz, Inc. Wire bond sensor package
JP2017139258A (ja) 2016-02-01 2017-08-10 ソニー株式会社 撮像素子パッケージ及び撮像装置
EP4160666A4 (en) * 2020-05-28 2023-10-25 Sony Semiconductor Solutions Corporation SOLID STATE IMAGING APPARATUS AND ELECTRONIC DEVICE
KR20240073033A (ko) * 2021-09-30 2024-05-24 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치, 전자 기기 및 촬상 장치의 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748658A (en) * 1993-10-22 1998-05-05 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical pickup head
JP3360504B2 (ja) * 1995-11-10 2002-12-24 ソニー株式会社 固体撮像装置の後処理方法及び製造方法
JP4372241B2 (ja) 1998-08-05 2009-11-25 パナソニック株式会社 固体撮像装置の製造方法
US6753922B1 (en) * 1998-10-13 2004-06-22 Intel Corporation Image sensor mounted by mass reflow
US6147389A (en) * 1999-06-04 2000-11-14 Silicon Film Technologies, Inc. Image sensor package with image plane reference
JP3461332B2 (ja) * 1999-09-10 2003-10-27 松下電器産業株式会社 リードフレーム及びそれを用いた樹脂パッケージと光電子装置
TW454309B (en) 2000-07-17 2001-09-11 Orient Semiconductor Elect Ltd Package structure of CCD image-capturing chip
JP2002043553A (ja) * 2000-07-26 2002-02-08 Canon Inc 固体撮像装置
JP3540281B2 (ja) * 2001-02-02 2004-07-07 シャープ株式会社 撮像装置

Also Published As

Publication number Publication date
US6864117B2 (en) 2005-03-08
DE60316664D1 (de) 2007-11-15
US20040214369A1 (en) 2004-10-28
DE60316664T2 (de) 2008-02-07
KR100576765B1 (ko) 2006-05-03
EP1473775B1 (en) 2007-10-03
EP1473775A3 (en) 2006-01-11
TWI309084B (https=) 2009-04-21
CN1542983A (zh) 2004-11-03
CN100401522C (zh) 2008-07-09
JP2004327917A (ja) 2004-11-18
JP3729817B2 (ja) 2005-12-21
EP1473775A2 (en) 2004-11-03
KR20040093361A (ko) 2004-11-05

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MM4A Annulment or lapse of patent due to non-payment of fees