CN100401522C - 固态成像装置的制造方法 - Google Patents

固态成像装置的制造方法 Download PDF

Info

Publication number
CN100401522C
CN100401522C CNB031598366A CN03159836A CN100401522C CN 100401522 C CN100401522 C CN 100401522C CN B031598366 A CNB031598366 A CN B031598366A CN 03159836 A CN03159836 A CN 03159836A CN 100401522 C CN100401522 C CN 100401522C
Authority
CN
China
Prior art keywords
base
resin molded
molded part
manufacturing
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031598366A
Other languages
English (en)
Chinese (zh)
Other versions
CN1542983A (zh
Inventor
南尾匡纪
堀木厚
西尾哲史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1542983A publication Critical patent/CN1542983A/zh
Application granted granted Critical
Publication of CN100401522C publication Critical patent/CN100401522C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
CNB031598366A 2003-04-28 2003-09-26 固态成像装置的制造方法 Expired - Fee Related CN100401522C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003123842A JP3729817B2 (ja) 2003-04-28 2003-04-28 固体撮像装置の製造方法
JP123842/2003 2003-04-28

Publications (2)

Publication Number Publication Date
CN1542983A CN1542983A (zh) 2004-11-03
CN100401522C true CN100401522C (zh) 2008-07-09

Family

ID=32985561

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031598366A Expired - Fee Related CN100401522C (zh) 2003-04-28 2003-09-26 固态成像装置的制造方法

Country Status (7)

Country Link
US (1) US6864117B2 (https=)
EP (1) EP1473775B1 (https=)
JP (1) JP3729817B2 (https=)
KR (1) KR100576765B1 (https=)
CN (1) CN100401522C (https=)
DE (1) DE60316664T2 (https=)
TW (1) TW200423389A (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4180537B2 (ja) * 2003-10-31 2008-11-12 シャープ株式会社 光学素子の封止構造体および光結合器ならびに光学素子の封止方法
JP4324081B2 (ja) * 2004-11-22 2009-09-02 パナソニック株式会社 光学デバイス
JP4196937B2 (ja) * 2004-11-22 2008-12-17 パナソニック株式会社 光学装置
JP4290134B2 (ja) * 2005-03-14 2009-07-01 パナソニック株式会社 固体撮像装置と固体撮像装置の製造方法
JP4595835B2 (ja) * 2006-03-07 2010-12-08 株式会社日立製作所 鉛フリーはんだを用いたリード付き電子部品
KR100747610B1 (ko) * 2006-04-06 2007-08-08 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP2008243869A (ja) * 2007-03-26 2008-10-09 Tdk Corp 受光装置
JP4766435B2 (ja) * 2008-07-24 2011-09-07 Ｓｍｋ株式会社 カメラモジュール用台座の製造方法
JP4693909B2 (ja) * 2009-02-05 2011-06-01 パナソニック株式会社 固体撮像装置とその製造方法
JP5489543B2 (ja) * 2009-06-09 2014-05-14 キヤノン株式会社 固体撮像装置
CN103579277B (zh) * 2013-11-14 2016-02-03 华进半导体封装先导技术研发中心有限公司 基于倒装图像传感器芯片的封装结构和封装方法
US9666730B2 (en) 2014-08-18 2017-05-30 Optiz, Inc. Wire bond sensor package
JP2017139258A (ja) 2016-02-01 2017-08-10 ソニー株式会社 撮像素子パッケージ及び撮像装置
EP4160666A4 (en) * 2020-05-28 2023-10-25 Sony Semiconductor Solutions Corporation SOLID STATE IMAGING APPARATUS AND ELECTRONIC DEVICE
KR20240073033A (ko) * 2021-09-30 2024-05-24 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치, 전자 기기 및 촬상 장치의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748658A (en) * 1993-10-22 1998-05-05 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical pickup head
JP2002043554A (ja) * 2000-07-17 2002-02-08 Orient Semiconductor Electronics Ltd Ｃｃｄパッケージ・モジュール
JP2002231916A (ja) * 2001-02-02 2002-08-16 Sharp Corp 撮像装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3360504B2 (ja) * 1995-11-10 2002-12-24 ソニー株式会社 固体撮像装置の後処理方法及び製造方法
JP4372241B2 (ja) 1998-08-05 2009-11-25 パナソニック株式会社 固体撮像装置の製造方法
US6753922B1 (en) * 1998-10-13 2004-06-22 Intel Corporation Image sensor mounted by mass reflow
US6147389A (en) * 1999-06-04 2000-11-14 Silicon Film Technologies, Inc. Image sensor package with image plane reference
JP3461332B2 (ja) * 1999-09-10 2003-10-27 松下電器産業株式会社 リードフレーム及びそれを用いた樹脂パッケージと光電子装置
JP2002043553A (ja) * 2000-07-26 2002-02-08 Canon Inc 固体撮像装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748658A (en) * 1993-10-22 1998-05-05 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical pickup head
JP2002043554A (ja) * 2000-07-17 2002-02-08 Orient Semiconductor Electronics Ltd Ｃｃｄパッケージ・モジュール
JP2002231916A (ja) * 2001-02-02 2002-08-16 Sharp Corp 撮像装置及びその製造方法

Also Published As

Publication number Publication date
US6864117B2 (en) 2005-03-08
DE60316664D1 (de) 2007-11-15
US20040214369A1 (en) 2004-10-28
DE60316664T2 (de) 2008-02-07
KR100576765B1 (ko) 2006-05-03
EP1473775B1 (en) 2007-10-03
EP1473775A3 (en) 2006-01-11
TWI309084B (https=) 2009-04-21
CN1542983A (zh) 2004-11-03
JP2004327917A (ja) 2004-11-18
JP3729817B2 (ja) 2005-12-21
EP1473775A2 (en) 2004-11-03
TW200423389A (en) 2004-11-01
KR20040093361A (ko) 2004-11-05

Similar Documents

Publication Publication Date Title
CN100428482C (zh) 固体摄像装置及其制造方法
CN100401522C (zh) 固态成像装置的制造方法
JP4606063B2 (ja) 光学デバイスおよびその製造方法
US6897428B2 (en) Solid-state imaging device and method for manufacturing the same
US7659617B2 (en) Substrate for a flexible microelectronic assembly and a method of fabricating thereof
CN100490162C (zh) 固体摄像装置及其制造方法
CN104576570B (zh) 电子部件、电子装置以及用于制造电子部件的方法
CN100420027C (zh) 光学器件及其制造方法
JP3838572B2 (ja) 固体撮像装置およびその製造方法
CN100433339C (zh) 固体摄像器件及其制造方法
JPH10261753A (ja) 樹脂封止型半導体装置
TW200401419A (en) Package for mounting a solid state image sensor
CN211125635U (zh) 半导体设备和电子设备
CN101582433A (zh) 具有一体成型透镜模组的影像感测器结构及其透镜模组
CN100433301C (zh) 固态成像器件及其制造方法
CN1979789A (zh) 影像感测晶片封装制程
WO2019033961A1 (zh) 感光组件、成像模组、智能终端及制造感光组件的方法和模具
JP2007317719A (ja) 撮像装置及びその製造方法
JP4219943B2 (ja) 固体撮像装置
JP2002344004A (ja) 光結合素子およびその製造方法、ならびに光結合素子製造装置
JP5605971B2 (ja) 電子装置及びその製造方法
JP3713026B2 (ja) 固体撮像装置の製造方法
JP2009194057A (ja) 半導体装置およびその製造方法、並びに、電子機器
CN201130660Y (zh) 高散热性芯片封装件的模具
CN113838839A (zh) 感测组件封装结构及其封装方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080709

Termination date: 20120926