TW200402133A - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
TW200402133A
TW200402133A TW092114249A TW92114249A TW200402133A TW 200402133 A TW200402133 A TW 200402133A TW 092114249 A TW092114249 A TW 092114249A TW 92114249 A TW92114249 A TW 92114249A TW 200402133 A TW200402133 A TW 200402133A
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor wafer
conductive pattern
semiconductor
opening
Prior art date
Application number
TW092114249A
Other languages
English (en)
Chinese (zh)
Inventor
Kazuyuki Misumi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200402133A publication Critical patent/TW200402133A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/859—Bump connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/865—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/22—Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
TW092114249A 2002-07-29 2003-05-27 Semiconductor device TW200402133A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002219909A JP2004063767A (ja) 2002-07-29 2002-07-29 半導体装置

Publications (1)

Publication Number Publication Date
TW200402133A true TW200402133A (en) 2004-02-01

Family

ID=30437667

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092114249A TW200402133A (en) 2002-07-29 2003-05-27 Semiconductor device

Country Status (6)

Country Link
US (1) US6841870B2 (https=)
JP (1) JP2004063767A (https=)
KR (1) KR20040011348A (https=)
CN (1) CN1472808A (https=)
DE (1) DE10324598A1 (https=)
TW (1) TW200402133A (https=)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI225291B (en) * 2003-03-25 2004-12-11 Advanced Semiconductor Eng Multi-chips module and manufacturing method thereof
JP4370513B2 (ja) * 2004-02-27 2009-11-25 エルピーダメモリ株式会社 半導体装置
KR100587081B1 (ko) * 2004-06-30 2006-06-08 주식회사 하이닉스반도체 개선된 열방출 특성을 갖는 반도체 패키지
KR100593703B1 (ko) * 2004-12-10 2006-06-30 삼성전자주식회사 돌출부 와이어 본딩 구조 보강용 더미 칩을 포함하는반도체 칩 적층 패키지
US20060202317A1 (en) * 2005-03-14 2006-09-14 Farid Barakat Method for MCP packaging for balanced performance
KR101141707B1 (ko) * 2006-02-24 2012-05-04 삼성테크윈 주식회사 반도체 패키지 및 그 제조 방법
KR100780691B1 (ko) * 2006-03-29 2007-11-30 주식회사 하이닉스반도체 폴딩 칩 플래나 스택 패키지
KR100766502B1 (ko) * 2006-11-09 2007-10-15 삼성전자주식회사 반도체 소자 패키지
KR100851108B1 (ko) * 2007-01-22 2008-08-08 주식회사 네패스 웨이퍼 레벨 시스템 인 패키지 및 그 제조 방법
KR100885918B1 (ko) * 2007-04-19 2009-02-26 삼성전자주식회사 반도체 디바이스 스택 패키지, 이를 이용한 전기장치 및 그패키지의 제조방법
US8643157B2 (en) * 2007-06-21 2014-02-04 Stats Chippac Ltd. Integrated circuit package system having perimeter paddle
US7915719B2 (en) * 2007-09-28 2011-03-29 Renesas Electronics Corporation Semiconductor device
KR100972052B1 (ko) * 2008-02-16 2010-07-22 김회진 비점오염원 처리시설
US8102666B2 (en) * 2008-08-19 2012-01-24 Stats Chippac Ltd. Integrated circuit package system
US7691674B1 (en) * 2009-06-20 2010-04-06 Stats Chippac Ltd. Integrated circuit packaging system with stacked device and method of manufacturing thereof
US8553420B2 (en) 2010-10-19 2013-10-08 Tessera, Inc. Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics
KR101061531B1 (ko) * 2010-12-17 2011-09-01 테세라 리써치 엘엘씨 중앙 콘택을 구비하며 접지 또는 배전을 개선한 적층형 마이크로전자 조립체
US8928153B2 (en) 2011-04-21 2015-01-06 Tessera, Inc. Flip-chip, face-up and face-down centerbond memory wirebond assemblies
US8952516B2 (en) 2011-04-21 2015-02-10 Tessera, Inc. Multiple die stacking for two or more die
US8633576B2 (en) 2011-04-21 2014-01-21 Tessera, Inc. Stacked chip-on-board module with edge connector
US8304881B1 (en) * 2011-04-21 2012-11-06 Tessera, Inc. Flip-chip, face-up and face-down wirebond combination package
US8338963B2 (en) * 2011-04-21 2012-12-25 Tessera, Inc. Multiple die face-down stacking for two or more die
US9013033B2 (en) 2011-04-21 2015-04-21 Tessera, Inc. Multiple die face-down stacking for two or more die
US8970028B2 (en) 2011-12-29 2015-03-03 Invensas Corporation Embedded heat spreader for package with multiple microelectronic elements and face-down connection
US8841765B2 (en) 2011-04-22 2014-09-23 Tessera, Inc. Multi-chip module with stacked face-down connected dies
US8513817B2 (en) 2011-07-12 2013-08-20 Invensas Corporation Memory module in a package
US8823165B2 (en) 2011-07-12 2014-09-02 Invensas Corporation Memory module in a package
US8502390B2 (en) 2011-07-12 2013-08-06 Tessera, Inc. De-skewed multi-die packages
WO2013052080A1 (en) 2011-10-03 2013-04-11 Invensas Corporation Stub minimization for multi-die wirebond assemblies with orthogonal windows
US8659141B2 (en) 2011-10-03 2014-02-25 Invensas Corporation Stub minimization using duplicate sets of terminals for wirebond assemblies without windows
US8917532B2 (en) 2011-10-03 2014-12-23 Invensas Corporation Stub minimization with terminal grids offset from center of package
US8441111B2 (en) 2011-10-03 2013-05-14 Invensas Corporation Stub minimization for multi-die wirebond assemblies with parallel windows
US8436457B2 (en) 2011-10-03 2013-05-07 Invensas Corporation Stub minimization for multi-die wirebond assemblies with parallel windows
US8659142B2 (en) 2011-10-03 2014-02-25 Invensas Corporation Stub minimization for wirebond assemblies without windows
US8345441B1 (en) 2011-10-03 2013-01-01 Invensas Corporation Stub minimization for multi-die wirebond assemblies with parallel windows
US8659140B2 (en) 2011-10-03 2014-02-25 Invensas Corporation Stub minimization using duplicate sets of signal terminals in assemblies without wirebonds to package substrate
EP2764543A2 (en) 2011-10-03 2014-08-13 Invensas Corporation Stub minimization for multi-die wirebond assemblies with parallel windows
US8525327B2 (en) 2011-10-03 2013-09-03 Invensas Corporation Stub minimization for assemblies without wirebonds to package substrate
KR20150040998A (ko) * 2012-08-02 2015-04-15 테세라, 인코포레이티드 두 개 이상의 다이에 대한 다중 다이 페이스-다운 적층
US8848392B2 (en) 2012-08-27 2014-09-30 Invensas Corporation Co-support module and microelectronic assembly
US9368477B2 (en) 2012-08-27 2016-06-14 Invensas Corporation Co-support circuit panel and microelectronic packages
US8848391B2 (en) 2012-08-27 2014-09-30 Invensas Corporation Co-support component and microelectronic assembly
US8787034B2 (en) 2012-08-27 2014-07-22 Invensas Corporation Co-support system and microelectronic assembly
KR102190382B1 (ko) * 2012-12-20 2020-12-11 삼성전자주식회사 반도체 패키지
US9123600B2 (en) * 2013-02-27 2015-09-01 Invensas Corporation Microelectronic package with consolidated chip structures
US9070423B2 (en) 2013-06-11 2015-06-30 Invensas Corporation Single package dual channel memory with co-support
US9123555B2 (en) 2013-10-25 2015-09-01 Invensas Corporation Co-support for XFD packaging
US9281296B2 (en) 2014-07-31 2016-03-08 Invensas Corporation Die stacking techniques in BGA memory package for small footprint CPU and memory motherboard design
US10453785B2 (en) * 2014-08-07 2019-10-22 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming double-sided fan-out wafer level package
US9691437B2 (en) 2014-09-25 2017-06-27 Invensas Corporation Compact microelectronic assembly having reduced spacing between controller and memory packages
US9484080B1 (en) 2015-11-09 2016-11-01 Invensas Corporation High-bandwidth memory application with controlled impedance loading
US9679613B1 (en) 2016-05-06 2017-06-13 Invensas Corporation TFD I/O partition for high-speed, high-density applications
KR200485491Y1 (ko) 2017-03-30 2018-01-16 오승아 학습용 간이 정수장치
KR20180130043A (ko) * 2017-05-25 2018-12-06 에스케이하이닉스 주식회사 칩 스택들을 가지는 반도체 패키지
KR102647423B1 (ko) * 2019-03-04 2024-03-14 에스케이하이닉스 주식회사 와이어 본딩 연결 구조를 가지는 반도체 패키지 및 이를 포함하는 반도체 패키지 구조물
CN117577634A (zh) * 2022-08-08 2024-02-20 长鑫存储技术有限公司 三维堆叠封装结构及其形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0177395B1 (ko) 1995-04-27 1999-05-15 문정환 반도체소자를 칩 상태로 장착시켜서 된 전자회로 보드 및 그 제조방법
JP2000349228A (ja) 1999-06-09 2000-12-15 Hitachi Ltd 積層型半導体パッケージ
TW415056B (en) * 1999-08-05 2000-12-11 Siliconware Precision Industries Co Ltd Multi-chip packaging structure
US6265763B1 (en) * 2000-03-14 2001-07-24 Siliconware Precision Industries Co., Ltd. Multi-chip integrated circuit package structure for central pad chip

Also Published As

Publication number Publication date
CN1472808A (zh) 2004-02-04
JP2004063767A (ja) 2004-02-26
DE10324598A1 (de) 2004-02-26
US6841870B2 (en) 2005-01-11
KR20040011348A (ko) 2004-02-05
US20040016999A1 (en) 2004-01-29

Similar Documents

Publication Publication Date Title
TW200402133A (en) Semiconductor device
JP3631120B2 (ja) 半導体装置
US5373188A (en) Packaged semiconductor device including multiple semiconductor chips and cross-over lead
KR100497974B1 (ko) 반도체 장치 및 그 제조 방법
US7944057B2 (en) Bond pad rerouting element, rerouted semiconductor devices including the rerouting element, and assemblies including the rerouted semiconductor devices
US8481368B2 (en) Semiconductor package of a flipped MOSFET and its manufacturing method
US8710647B2 (en) Semiconductor device having a first conductive member connecting a chip to a wiring board pad and a second conductive member connecting the wiring board pad to a land on an insulator covering the chip and the wiring board
US20040195700A1 (en) Multi-chip package combining wire-bonding and flip-chip configuration
US8541891B2 (en) Semiconductor device
JP2002222889A (ja) 半導体装置及びその製造方法
KR100508682B1 (ko) 더미 와이어를 이용한 열방출형 적층 칩 패키지
JP2005209882A (ja) 半導体パッケージ及び半導体装置
KR102900182B1 (ko) 반도체 패키지
US7030489B2 (en) Multi-chip module having bonding wires and method of fabricating the same
US8941237B2 (en) Semiconductor device
JP2007305848A (ja) 半導体装置
KR100702970B1 (ko) 이원 접속 방식을 가지는 반도체 패키지 및 그 제조 방법
JP3670625B2 (ja) 半導体装置およびその製造方法
JP2008016810A (ja) スタックパッケージ
JPH0322544A (ja) 半導体装置
US20070138616A1 (en) Semiconductor device and manufacturing method of the same
KR100258607B1 (ko) 리드 온 칩 타입의 칩 스케일 반도체 패키지 구조 및 제조방법
CN100524721C (zh) 芯片封装结构
KR20010068589A (ko) 칩 스캐일 스택 패키지
JPH1070150A (ja) Ｃｓｐ型半導体装置