TW200303369A - Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target - Google Patents
Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target Download PDFInfo
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- TW200303369A TW200303369A TW091135656A TW91135656A TW200303369A TW 200303369 A TW200303369 A TW 200303369A TW 091135656 A TW091135656 A TW 091135656A TW 91135656 A TW91135656 A TW 91135656A TW 200303369 A TW200303369 A TW 200303369A
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- Prior art keywords
- change memory
- target
- phase change
- component
- sputtering target
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 33
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
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- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Description
200303369 玖、發明說明 【發明所屬之技術領域】 本發明係關於,儘量減少影響結晶速度之雜質元素並 減少靶成分相對於目標組成的偏差,進而抑制靶成分的組 成偏析,以提昇相變化型記憶體的重寫特性以及結晶速度 之相變化型記憶體用濺鍍靶,使用該濺鍍靶所形成之相變 化型記憶體用膜及該靶之製造方法。 【先前技術】 近年來,不需使用磁頭即可記憶-再生之高密度記憶 體光碟技術已開發出,且很快地受到囑目。該光碟分爲再 生專用型、寫入一次型與重寫型三種,又以在寫入一次型 或重寫型中所使用的相變化方式最受囑目。 相變化光碟,係以雷射光照射基板上的記憶體薄膜使 其加熱昇溫,使該記憶體薄膜的結構產生結晶學的相變化( 非晶質〇結晶)而進行資訊的記憶-再生,具體而言,檢測出 因該相間的光學常數變化所造成之反射率變化來進行資訊 的再生。 上述相變化以會聚成直徑1〜數//m左右之雷射光照射 來進行。此時,若1// m的雷射光束以10m/S的線速度通過 時,光照射在光碟中某個點之時間爲l〇〇ns,而在該時間內 進行上述相變化與反射率的檢測,故必須在該時間內實現 上述結晶學上的相變化,亦即非晶質與結晶間的相變化。 基於此,已使用的相變化光碟,係將Ge-Sb-Te系、In· 200303369
Sb-Te系等之記憶體薄膜層的兩側以硫化鋅-砂氧化物(znS • Si02)系之高熔點介電體的保護層夾住,再設置鋁合金反 射膜而形成四層結構,而鍊(Sb)、碲(Te)或硒(Se)對上述光 記憶媒體而言,爲重要的組成元素。 再者,最近有提案出一非易失性相變化記憶體,係以 濺鍍法形成硫族元素薄膜,使其與電極接觸,電流流經該 電極使硫族元素產生相變化者,相當引人注目。使用該技 術之非易失性記憶體一般稱爲PRAM或〇UM(Ovonic Unified Memories) 0 槪略地說明該OUM,當局部的硫族元素濺鍍薄膜加熱 至600°C以上,以1〜2ns急速冷卻形成非晶質相。此時的加 熱區域狹窄,有資料顯示對50 x 200nm2大小的元件尺寸, 雖最中央可達到600°C,一旦距其lOOnm,溫度僅昇至100 °C。 在上述的急速冷卻並未結晶化’而藉由以20ns〜50ns間 、300〜400°C進行退火達到結晶化。結晶之硫族元素的電阻 低,而非晶質的電阻高。又’兩者在超過臨限電壓時其特 性均會反轉。 由於OUM利用上述之特性’因此具有非易失性、高密 度、低電壓、低消耗電力、1〇12次的重寫次數、非破壞性 讀取、易於與Si製程整合、可作成共用記憶體架構等許多 的優點。 相變化光碟及OUM均利用銻、碲、硒元素等的硫族元 素濺鍍薄膜,且必須充分地考慮材料的特性。 200303369 然而,一旦上述記憶媒體中摻入雜質,隨著記憶-淸除 時之液-固相間的反覆相變化,在記憶點與非記憶部分的界 面附近會產生濃縮,且在記憶點周圍會產生構成粗大結晶 粒的發生源之結晶成長核,其爲重寫次數減少的原因。 如上所述,上述相變化記憶媒體之記憶體薄膜層,一 般以濺鍍法形成。該濺鍍法的成膜原理在於,將正極與由 負極構成之靶對向放置,在惰性環境氣氛下,在基板與靶 之間施加高電壓以產生電場,此時電離的電子與惰性氣體 衝撞形成電漿,在該電漿中的陽離子衝撞到靶(負極)的表面 打出靶之構成原子,該飛出的原子附著在對向的基板表面 上形成膜。 當濺鍍中使用的靶本身雜質多、且在與目標組成的偏 差大的情形下,其對記憶體薄膜層產生很大的影響,造成 重寫次數減少的問題。 基於此,提出了幾個有關高純度、高密度靶的提案。 以往提案的製造方法,係採溶解法與粉末冶金法的組合來 製造。然而,因爲銻、碲、硒元素其蒸氣壓高,溶解時該 等元素會先蒸發,造成與目標組成的偏差,且在靶中亦有 組成的離析產生,故並不適合。記錄膜中的組成偏差,會 造成結晶化速度不平均,而對重寫特性造成不好的影響。 基於此,係忽略組成的偏差、或估計組成的偏差與組 成離析而事前調合。後者若運氣好有時雖可形成目標組成 ,但造成組成均一化的精度與成膜的再現性變差,有產品 不安定的問題。 200303369 再者,因爲縱容朝加熱爐的蒸發,每次的製程均有爐 內被污染的問題,且反覆溶解時,有來自氣體成分、前述 爐內與坩鍋材料所造成的污染,而產生難以保持高純度的 問題。 【發明內容】 本發明之課題,係爲了提供出相變化型記憶體用濺鍍 靶、用該濺鍍靶所形成之相變化型記憶體用膜及該靶之製 造方法,可儘量減少偏析濃縮於記憶點與非記憶部的界面 附近而構成重寫次數減少原因的雜質、特別是影響結晶速 度之雜質元素,同時減少靶組成相對於目標組成的偏差及 成分偏析,以提昇相變化型記憶體重寫的特性以及結晶速 度。 爲解決上述課題,本案發明人等深入進行硏究的結果 ,得到可正確且安定地製造的技術手段。 本發明基於此,提供出 1. 一種相變化型記憶體用濺鍍靶以及使用該濺鍍靶所形 成之相變化型記憶體用膜,其特徵在於,係由3元系以上 的元素組成,以擇自銻、碲、硒元素中至少一成分作爲主 成分,且與目標組成的組成差異在±1.Oat%以下; 2. —種相變化型記憶體用濺鍍靶以及使用該濺鍍靶所形 成之相變化型記億體用膜,其特徵在於,係由3元系以上 的元素組成,以擇自銻、碲、硒元素中至少一成分作爲主 成分,且在由靶內任意部位採取兩個以上的各個樣本 200303369 〇 =,2,3,4.")中,主成分以外之各成分元素的組成八丨(〜1%)之 平均値爲 A(wt%)時,I A-Ai I $0.15 ; 3. 如上述1之相變化型記憶體用濺鍍靶以及使用該濺鍍 靶所形成之相變化型記憶體用膜,其係由3元系以上的元 素組成,以擇自銻、碲、硒元素中至少一成分作爲主成分 ,且在由靶內任意部位採取兩個以上的各個樣本(i=,2,3,4··· )中,主成分以外之各成分元素的組成Ai(wt%)之平均値爲 A(wt%)時,| A-Ai | S0.15 ; 4. 如上述1〜3各別之相變化型記憶體用濺鍍靶以及使用 該濺鍍靶所形成之相變化型記憶體用膜,其中,氣體成分 以外之純度在99.995wt%以上,且氣體成分之碳、氮、氧、 硫的總量在700ppm以下; 5. 如上述1〜4各別之相變化型記憶體用濺鍍靶以及使用 該濺鍍靶所形成之相變化型記憶體用膜,其中,靶的平均 結晶粒徑在50/z m以下,且相對密度在90%以上; 6. 如上述1〜5各別之相變化型記憶體用濺鍍靶以及使用 該濺鍍靶所形成之相變化型記憶體用膜,其中,包含至少 一種選自過渡金屬、鎵、鍺、銦、錫作爲副成分者。 本發明更提供出 7·如上述1〜6各別之相變化型記憶體用濺鍍靶之製造方 法,其特徵在於,係在真空或惰性環境氣氛的密閉系統中 溶解鑄造; 8.如上述7之相變化型記憶體用濺鍍靶之製造方法,其 中,使用內部爲真空或惰性環境氣氛的石英容器,將該容 200303369 器密閉進行溶解鑄造; 9.如上述8之相變化型記憶體用濺鍍靶之製造方法,其 中,使用鹼成分在lOppm以下,ΟΗΓ在5ppm以下之高純度 石英; 10·如上述7〜9各別之相變化型記憶體用濺鍍靶之製造 方法,其中,溶解前的原料純度在99.999wt%以上; 11·如上述7〜10各別之相變化型記憶體用濺鍍靶之製造 方法,其中,在成分元素或生成化合物的熔點溫度以上溶 解鑄造。 【實施方式】 先前,用於光碟記憶層之靶材純度在3N〜4N左右即非 常適用,但近年來伴隨著高速記憶化、使用短波長雷射所 造成之點微小化,而需要機能更好的靶。 靶中的雜質,在記憶點與非記憶部分的界面附近會形 成偏析濃縮,而成爲重寫次數減少的原因。再者,若雜質 很多,當各組成元素由十分均勻分布的非晶質狀態變成結 晶狀態時,因爲雜質會阻礙原子的相互擴散而使擴散時間 變長,而造成結晶化速度變慢的問題。 如上所述,近來作爲利用結晶相變化之記錄用材料所 採用以鍊、碲或硒爲主體的合金系靶,隨著增加重寫次數 、快速地gB錄、以及以大谷量爲目的之記錄部分微小化, 必須盡量減少其與靶的目標組成差異以及靶內的組成離析 且純度提高。 200303369 由雜質的觀點來看,擴散及移動度大的鹼金屬與鹼土 類金屬爲問題所在。又,由耐蝕性來看,減少該等元素是 重要的,且對環境而言,其可維持強的耐蝕性。再者,當 u、Th等放射性元素雜質用於相變化型記憶體時,會成爲 錯誤動作的原因,故以降低其含量較佳。 又,相變化型記憶體之膜組成與目標組成的偏差會對 重寫特性及結晶化速度造成影響,尤其對結晶化速度的影 響很大。因此必須更加減少主成分與副成分的組成差異。 由於靶的組成差異直接與膜的組成差異有關,故控制靶的 組两非常地重要。 本發明係在銻、碲或硒中選至少一種成分作爲主要成 分,由3元系以上之元素組成相變化型記憶體用濺鍍靶, 且其相對於目標組成的偏差在±1.Oat%以下。 再者,本發明之相變化型記憶體用濺鍍靶,其在由靶 內任意部位採取兩個以上的各個樣本(i=,2,3,4…)中,主成 分以外的各成分元素的組成Ai(wt%)之平均値爲A(wt%)時 ,| A-Ai | S 0·15。 本發明之相變化型記憶體用濺鍍靶包含至少一種選自 過渡金屬、鎵、鍺、銦、錫作爲副成分者。 藉此,使用該靶所形成之相變化記憶體用膜可使靶之 組成差異與組成離析降低,進而提昇目標組成的精確度使 其再現性佳,且顯著地提昇重寫特性與結晶化速度。 靶的純度,在氣體成分以外爲99.995wt%以上,且氣體 成分之碳、氮、氧、硫的總量在700ppm以下。耙中含有的 12 200303369 氣體成分會對濺鍍時的粒子產生造成不好的影響,同時會 被拉入膜中,而影響重寫特性、結晶化溫度及結晶化速度 。本發明可解決該等問題。 再者,關於靶的組織,爲了進行均一地成膜,盡可能 地使之微小且緻密,而在本發明中平均結晶粒徑在50//m 以下,且相對密度在90%以上。 接著說明本發明之高純度濺鍍靶的製造方法。先前, 因爲銻、碲、硒非常脆,一經酸洗,酸會殘留其中,而在 之後的製程成爲氧等增加的原因,故未進行酸洗處理。 另一方面,雜質容易在銻、碲、硒的粒界離析,且已 知有鑄錠等由粒界裂開的現象。此即在裂開的部分有雜質 濃縮的現象。 由此可知,適度地將銻、碲、硒等原料粉碎,並將該 原料藉由過篩以調整粒度後,以酸來洗淨,藉此能有效地 除去前述濃縮的雜質。 接著,如上所述利用酸將雜質以酸洗淨去除後,溶解 該原料,鑄造得到筒純度的銻、碲、硒鑄錬。 去除溶解時浮起的熔渣。在無熔渣時,此製程可省略 〇 過篩後的銻、碲、硒原料粒度以調整至0.5mm〜10mm 較佳。若小於〇.5mm則難以洗淨,洗淨效率低。又,若大 於10mm則雜質會殘留在原料粉末中而造成無法充分洗淨 的問題。因此,藉由過篩而將銻、碲、硒的原料粒度調整 至0.5mm〜10mm。又以1mm〜5mm更理想。 13 200303369 用來洗淨的酸可使用鹽酸、硝酸、硫酸、氫氟酸中任 一種或兩種以上的混酸。尤其以鹽酸作爲洗淨用的酸更具 效果。酸的濃度在0.5N〜6N間。若低於0.5N則酸洗淨的時 間過長;又,若超過6N,則一部份的銻、碲、硒會溶解造 成損失,故酸的濃度以0.5N〜6N較佳。 再者,酸洗淨以10°C〜80°C的溫度進行。若低於10 t 將無法有效地去除雜質;又,若超過80°C則液體易蒸發使 酸的損失變大,故較不理想。 使用純度2N〜3N(99wt%〜99.9wt%)級以上的銻、碲、硒 作爲原料。根據上述本發明之操作,高純度化後的純度可 超過4N〜5N。 酸洗淨後,將銻、碲、硒之原料粉以純水洗淨,乾燥 後在氬氣等惰性環境氣氛中或真空中溶解鑄造得到高純度 的銻或碲鑄錠。 如上所述,以酸洗淨與溶解等簡易的方法可以低價製 造4N以上的銻、碲或硒。 將如此般製造的銻、碲或硒、以及在作爲副成分的過 渡金屬、鎵、鍺、銦、錫中選擇至少一種,以目標之既定 混合比例混合之後溶解。溶解前的原料純度以超過 99.999wt% 較佳。 溶解時,爲了避免來自坩鍋材料與爐內的污染而使用 高純度的石英(管等)。該石英管作成栓的形狀,以儘可能使 其獨立於坩鍋內者爲佳。因爲採利用石英管的密閉系統, 可顯著地減少組成的偏差。溶解時,一般以超過成分元素 200303369 或生成化合物的熔點溫度進行。 如上所述,藉由事先將原料高純度化進而將氧化物、 熔渣量降低,可減少與目標組成的偏差。產生的熔渣量少 ,若將之去除,影響也會變少。 又以使用驗金屬成分低於lOppm、〇H_低於5ppm的高 純度石英較佳。藉此,可增加重寫的次數且可儘量減少影 響高速記錄化的因素。 接著,以球磨機等磨碎成粉末,再以一定的溫度熱壓 得到靶。 實施例與比較例 以下,說明實施例與比較例。又,本實施例僅爲一例 ,並不只限於此例中所提及的。亦即,本發明係以申請專 利範圍來規範,且包含在本發明之實施例以外的各種變形 (實施例1) 將高純度化、5N的塊狀鍺、銻與碲調合成分別爲 22.2at%、 22.2at% 、55.6at%,置入石英坩鍋中,抽真空同 時密封,並在Ar環境氣氛中以900t溶解。 溶解後的鑄錠利用球磨機在Ar環境氣氛中磨碎,磨碎 後的材料經過熱壓再成形作爲濺鍍靶。 如表1所示,鹼金屬與鹼土類金屬等雜質的總和小於 lOppm ’成分元素以外的雜質金屬元素在15ppm以下、碳成 15 200303369 分在lOppm以下、氮成分在200ppm以下、氧成分在 lOOppm以下、硫成分在lOppm以下。觀察在靶內採取之塊 組織,其平均結晶粒徑爲30 // m。 分析由該靶不同的5點所取得的樣本。如表2所示, 與鍺、銻及碲之目標成分的組成差異(5點平均)分別爲-O.lat%、- 0.2at%以及+0.3at%,不論何者,均符合本發明之 條件。
(單位爲ppm,僅U、Th爲ppb)
Cr Ti U Th Na K Fe Ni Cu Ca Mg C N 〇 S 實施例1 0.1 3 <0.1 <0.1 1 2 0.2 3 4 0.2 0.5 <10 200 100 <10 實施例2 0.1 2 <0.1 <0.1 1 2 0.1 2 2 0.1 0.2 10 300 300 10 比較例1 5 10 1 1 2 5 20 12 17 7 12 500 300 400 50
表2 (5點所採取的樣本平均値) 與目標組成的偏差 鍺 -O.lat% 銻 -0.2at% 碲 +0.3at% (實施例2) 16 200303369 將高純度化、5N的塊狀銀、銦、銻與碲等原料調合成 分別爲5at%、 5at% 、60at% 、30at%,置入石英坩鍋中 ,抽真空同時密封,並在Ar環境氣氛中以1100°C溶解。 溶解後的鑄錠利用氧化鋁的球磨機在Ar環境氣氛中磨 碎,磨碎後的材料經過熱壓再成形作爲濺鍍靶。 如表1所示,成分以外的金屬元素在lOppm以下、碳 成分爲lOppm以下、氮成分爲300ppm、氧成分在300ppm 以下、硫成分在lOppm以下。觀察在靶內採取之塊組織, 其平均結晶粒徑爲30 // m。 再者,分析由該靶不同的5點所得取的樣本。如表3 所示,與銀、銦、銻及碲之目標成分的組成差異(5點平均) 分別爲-O.lat%、+0.1at%、+0.3at%以及-0.3at%,不論何 者,均符合本發明之條件。 表3 (5點所採取的樣本平均値) 與目標組成的偏差 銀 -O.lat% 銦 +0.1 at% 銻 +0.3at% 碲 _ 0.3at% (比較例1)
將高純度化、5N的塊狀鍺、銻與碲,調合成分別爲 22.2at%、22.2at% 、55.6at%,置入石墨坩鍋中,在Ar環境 17 200303369 氣氛中以800°C溶解。 溶解後確認爐壁上銻、碲系列的蒸鍍物。溶解後的鑄 錠利用氧化鋁的球磨機在Ar環境氣氛中磨碎,磨碎後的材 料經過熱壓再成形作爲濺鍍靶。 如表1所示,成分元素以外的雜質金屬元素約爲 90ppm、碳成分爲500ppm、氮成分爲300ppm、氧成分爲 500ppm、硫成分爲50ppm。觀察在靶內採取之塊組織,其 平均結晶粒徑爲60// m。 分析由該靶不同的5點所取得的樣本,如表4所示, 與銀、鍺、銻及碲之目標成分的組成差異(5點平均)分別爲 +0.5at%、+0.7at%、- 1.2at%以及-2.0at%,而爲產生組成 差異等嚴重問題的靶。 表4 (5點所採取的樣本平均値) 與目標組成的偏差 銀 +0.5 at% 鍺 +0.7 at% 銻 -1.2at% 碲 -2.0at%
發明之效果 本發明可儘量減少偏析濃縮於記憶點與非記憶部分的 界面附近而造成重複記錄次數減少原因的靶中雜質,特別 18 200303369 是減少擴散及移動程度大的碳、氮、氧、硫等氣體成分、 鹼金屬與鹼土類金屬的雜質含量,而可提升由非晶質狀態 到結晶狀態(結晶化)的速度,具有良好效果。 再者,相對於目標組成使靶組成的偏差在±1.Oat%以下 ,且減少靶內成分的離析,藉此提昇相變化型記憶體之重 寫特性及結晶化速度,而具備顯著的效果。
19
Claims (1)
- 200303369 拾、申請專利範圍 1. 一種相變化型記憶體用濺鍍靶,其特徵在於,係由3 元系以上的元素組成,以擇自銻、碲、硒元素中之至少一 成分作爲主成分,且與目標組成的組成差異在土 1.Oat%以下 〇 2. —種相變化型記憶體用濺鍍靶,其特徵在於,係由3 元系以上的元素組成,以擇自銻、碲、硒元素中至少一成 分作爲主成分,且在由靶內任意部位採取兩個以上的各個 樣本(i = 2,3,4…)中,主成分以外之各成分元素的組成 Ai(wt%)之平均値爲 A(wt%)時,| A-Ai 丨 S0.15。 3. 如申請專利範圍第1項之相變化型記憶體用濺鍍靶, 其係由3元系以上的元素組成,以擇自錄、碲、硒元素中 至少一成分作爲主成分,且在由靶內任意部位採取兩個以 上的各個樣本(i=,2,3,4···)中,主成分以外之各成分元素的 組成 Ai(wt%)之平均値爲 A(wt%)時,| A-Ai | S 0.15。 4. 如申請專利範圍第1〜3項中任一項之相變化型記憶體 用濺鍍靶,其中,氣體成分以外之純度在99.995wt%以上, 且氣體成分之碳、氮、氧、硫的總量在700ppm以下。 5·如申請專利範圍第1〜3項中任一項之相變化型記憶體 用濺鍍靶,其中,靶的平均結晶粒徑在50//m以下,且相 對密度在90%以上。 6·如申請專利範圍第1〜3項中任一項之相變化型記憶體 用濺鍍靶,其中,包含選自過渡金屬、鎵、鍺、銦、錫之 至少一種以作爲副成分。 20 200303369 7. —種相變化型記憶體用濺鍍靶之製造方法,係用來製 造申請專利範圍第1〜6項中任一項之相變化型記憶體用濺 鍍靶,其特徵在於,係在真空或惰性環境氣氛的密閉系中 溶解鑄造。 8. 如申請專利範圍第7項之相變化型記憶體用濺鍍靶之 製造方法,其中,係使用內部爲真空或充塡惰性環境氣氛 的石英容器,將該容器密閉進行溶解鑄造。 9. 如申請專利範圍第8項之相變化型記憶體用濺鍍靶之 製造方法,其中,係使用鹼成分lOppm以下、OH—5ppm以 下之高純度石英。 10. 如申請專利範圍第7〜9項中任一項之相變化型記憶 體用濺鍍靶之製造方法,其中,溶解前的原料純度在 99.999wt%以上。 11. 如申請專利範圍第7〜9項中任一項之相變化型記憶 體用濺鍍靶之製造方法,其中,係在成分元素或生成化合 物的熔點溫度以上進行溶解鑄造。 12. —種使用相變化型記憶體用濺鍍靶所形成之相變化 型記憶體用膜,其特徵在於,係由3元系以上的元素組成 ,以擇自銻、碲、硒元素中至少一成分作爲主成分,且與 目標組成的組成差異在±1.Oat%以下。 13. —種使用相變化型記憶體用濺鍍靶所形成之相變化 型記憶體用膜,其特徵在於,係由3元系以上的元素組成 ,以擇自銻、碲、硒元素中至少一成分作爲主成分,且在 由靶內任意部位採取兩個以上的各個樣本(i=,2,3,4…)中, 21 200303369 主成分以外之各成分元素的組成Ai(wt%)之平均値爲 A(wt%)時,| A-Ai | S0.15。 14. 一種相變化型記憶體用膜,係使用申請專利範圍第 1項之相變化型記憶體用濺鍍靶所形成者,其特徵在於,係 由3元系以上的元素組成,以擇自銻、碲、硒元素中至少 一成分作爲主成分,且在由靶內任意部位採取兩個以上的 各個樣本(^,2,3,4-)中,主成分以外之各成分元素的組成 Ai(wt%)之平均値爲 A(wt%)時,| A-Ai | S0.15。 15. 如申請專利範圍第12〜14項中任一項之使用相變化 型記憶體用濺鍍靶所形成之相變化型記憶體用膜,其中, 氣體成分以外之純度在99.995wt%以上,且氣體成分之碳、 氮、氧、硫的總量在700ppm以下。 16. 如申請專利範圍第12〜14項中任一項之使用相變化 型記憶體用濺鍍靶所形成之相變化型記憶體用膜,其中, 靶的平均結晶粒徑在50/zm以下,且相對密度在90%以上 〇 17. —種相變化型記憶體用膜,係使用申請專利範圍第 1〜3項中任一項之相變化型記憶體用濺鍍靶所形成者,其特 徵在於,係包含選自過渡金屬、鎵、鍺、銦、錫中至少一 種以作爲副成分。 拾壹、屢式 Λττ ΙΠΙ: 22 200303369 陸、(一)、本寒ί旨定代表圖爲:第無圖 (二)、本代表圖之元件代表符號簡單說明: >fnr 1111: 柒、本案若有化學式時,請示最能顯示發明特徵的化學 式··4
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JP2003166023A (ja) * | 2001-11-30 | 2003-06-13 | Nikko Materials Co Ltd | アンチモン又はテルルの高純度化方法 |
KR20070073955A (ko) * | 2004-11-30 | 2007-07-10 | 닛코 킨조쿠 가부시키가이샤 | Sb-Te계 합금 소결체 스퍼터링 타겟 |
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2002
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Also Published As
Publication number | Publication date |
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JP4790833B2 (ja) | 2011-10-12 |
EP1480209A4 (en) | 2006-11-08 |
EP1480209A1 (en) | 2004-11-24 |
JP5420594B2 (ja) | 2014-02-19 |
EP1480209B1 (en) | 2009-04-01 |
JP2010003402A (ja) | 2010-01-07 |
KR100656674B1 (ko) | 2006-12-11 |
CN1620693A (zh) | 2005-05-25 |
WO2003071531A1 (en) | 2003-08-28 |
KR20040078700A (ko) | 2004-09-10 |
CN100369141C (zh) | 2008-02-13 |
JP5203420B2 (ja) | 2013-06-05 |
JP2012009128A (ja) | 2012-01-12 |
CN101042903A (zh) | 2007-09-26 |
US20070062808A1 (en) | 2007-03-22 |
US7484546B2 (en) | 2009-02-03 |
TWI303281B (zh) | 2008-11-21 |
JP2010236095A (ja) | 2010-10-21 |
US7156964B2 (en) | 2007-01-02 |
JPWO2003071531A1 (ja) | 2005-06-16 |
US20050115829A1 (en) | 2005-06-02 |
CN101042903B (zh) | 2010-06-09 |
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