SG2014013833A - Display device and method for manufacturing same - Google Patents
Display device and method for manufacturing sameInfo
- Publication number
- SG2014013833A SG2014013833A SG2014013833A SG2014013833A SG2014013833A SG 2014013833 A SG2014013833 A SG 2014013833A SG 2014013833 A SG2014013833 A SG 2014013833A SG 2014013833 A SG2014013833 A SG 2014013833A SG 2014013833 A SG2014013833 A SG 2014013833A
- Authority
- SG
- Singapore
- Prior art keywords
- display device
- manufacturing same
- manufacturing
- same
- display
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011140300 | 2011-06-24 | ||
| PCT/JP2012/003960 WO2012176422A1 (ja) | 2011-06-24 | 2012-06-18 | 表示装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG2014013833A true SG2014013833A (en) | 2014-10-30 |
Family
ID=47422280
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2014013833A SG2014013833A (en) | 2011-06-24 | 2012-06-18 | Display device and method for manufacturing same |
| SG10201605237SA SG10201605237SA (en) | 2011-06-24 | 2012-06-18 | Display device and method for manufacturing same |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201605237SA SG10201605237SA (en) | 2011-06-24 | 2012-06-18 | Display device and method for manufacturing same |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10177170B2 (enExample) |
| JP (2) | JP6215053B2 (enExample) |
| CN (1) | CN103765494B (enExample) |
| CA (1) | CA2845768A1 (enExample) |
| SG (2) | SG2014013833A (enExample) |
| WO (1) | WO2012176422A1 (enExample) |
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| US8354674B2 (en) * | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
| US8969154B2 (en) * | 2011-08-23 | 2015-03-03 | Micron Technology, Inc. | Methods for fabricating semiconductor device structures and arrays of vertical transistor devices |
| US9412799B2 (en) | 2013-08-26 | 2016-08-09 | Apple Inc. | Display driver circuitry for liquid crystal displays with semiconducting-oxide thin-film transistors |
| US9818765B2 (en) | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
| JP6101357B2 (ja) * | 2013-10-09 | 2017-03-22 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US9228717B2 (en) * | 2013-11-28 | 2016-01-05 | Lg Display Co., Ltd. | Quantum rod compound including electron acceptor and quantum rod luminescent display device including the same |
| CN103730485B (zh) | 2013-12-27 | 2016-09-07 | 京东方科技集团股份有限公司 | 双面显示的oled阵列基板及其制备方法、显示装置 |
| EP2911199B1 (en) | 2014-02-24 | 2020-05-06 | LG Display Co., Ltd. | Thin film transistor substrate and display using the same |
| EP2911200B1 (en) | 2014-02-24 | 2020-06-03 | LG Display Co., Ltd. | Thin film transistor substrate and display using the same |
| EP2911202B1 (en) | 2014-02-24 | 2019-02-20 | LG Display Co., Ltd. | Thin film transistor substrate and display using the same |
| US9721973B2 (en) | 2014-02-24 | 2017-08-01 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
| US10325937B2 (en) | 2014-02-24 | 2019-06-18 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
| US10985196B2 (en) | 2014-02-24 | 2021-04-20 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
| US10186528B2 (en) | 2014-02-24 | 2019-01-22 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
| KR102401432B1 (ko) * | 2014-02-24 | 2022-05-26 | 엘지디스플레이 주식회사 | 표시장치 |
| US9214508B2 (en) | 2014-02-24 | 2015-12-15 | Lg Display Co., Ltd. | Thin film transistor substrate with intermediate insulating layer and display using the same |
| KR102454382B1 (ko) * | 2014-02-24 | 2022-10-18 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
| US9406705B2 (en) | 2014-02-25 | 2016-08-02 | Lg Display Co., Ltd. | Display backplane having multiple types of thin-film-transistors |
| US9490276B2 (en) * | 2014-02-25 | 2016-11-08 | Lg Display Co., Ltd. | Display backplane and method of fabricating the same |
| US10074576B2 (en) * | 2014-02-28 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US9324747B2 (en) * | 2014-03-13 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
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| JP6518890B2 (ja) * | 2014-03-31 | 2019-05-29 | 株式会社Ｊｏｌｅｄ | 表示装置および電子機器 |
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| JP6570417B2 (ja) * | 2014-10-24 | 2019-09-04 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
| CN104377167B (zh) * | 2014-11-13 | 2017-04-05 | 京东方科技集团股份有限公司 | 薄膜晶体管阵列基板及其制作方法、显示面板和显示装置 |
| CN104409514A (zh) * | 2014-11-21 | 2015-03-11 | 京东方科技集团股份有限公司 | 一种薄膜晶体管结构、其制作方法及相关装置 |
| CN104538401B (zh) * | 2014-12-23 | 2017-05-03 | 深圳市华星光电技术有限公司 | Tft基板结构 |
| KR101658716B1 (ko) * | 2014-12-31 | 2016-09-30 | 엘지디스플레이 주식회사 | 표시 장치 |
| KR102636037B1 (ko) * | 2014-12-31 | 2024-02-08 | 엘지디스플레이 주식회사 | 다수의 타입들의 박막 트랜지스터들을 갖는 디스플레이 백플레인 |
| KR102503812B1 (ko) * | 2014-12-31 | 2023-02-23 | 엘지디스플레이 주식회사 | 다수의 타입들의 박막 트랜지스터들을 갖는 디스플레이 백플레인 |
| US9685469B2 (en) * | 2015-04-03 | 2017-06-20 | Apple Inc. | Display with semiconducting oxide and polysilicon transistors |
| TW201704831A (zh) * | 2015-07-31 | 2017-02-01 | 凌巨科技股份有限公司 | 薄膜電晶體結構 |
| KR102178472B1 (ko) * | 2015-10-07 | 2020-11-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
| KR102179378B1 (ko) * | 2015-10-07 | 2020-11-18 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
| KR102179379B1 (ko) * | 2015-10-07 | 2020-11-18 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
| WO2017070890A1 (en) * | 2015-10-29 | 2017-05-04 | Boe Technology Group Co., Ltd. | Array substrate and fabricating method thereof, display panel, and display apparatus |
| US10038402B2 (en) | 2015-10-30 | 2018-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| KR102519942B1 (ko) * | 2015-11-26 | 2023-04-11 | 엘지디스플레이 주식회사 | 유기발광 다이오드 표시장치용 박막 트랜지스터 기판 |
| US9818344B2 (en) | 2015-12-04 | 2017-11-14 | Apple Inc. | Display with light-emitting diodes |
| CN105552085B (zh) * | 2015-12-25 | 2019-04-30 | 昆山国显光电有限公司 | 一种像素驱动电路及其制备方法 |
| US10651209B2 (en) * | 2016-01-27 | 2020-05-12 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
| US10510781B2 (en) * | 2016-02-22 | 2019-12-17 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing semiconductor device |
| JP6673731B2 (ja) | 2016-03-23 | 2020-03-25 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
| US10468434B2 (en) * | 2016-04-08 | 2019-11-05 | Innolux Corporation | Hybrid thin film transistor structure, display device, and method of making the same |
| JP6668160B2 (ja) * | 2016-05-06 | 2020-03-18 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
| TWI579926B (zh) * | 2016-05-25 | 2017-04-21 | 友達光電股份有限公司 | 主動元件陣列基板 |
| JP6727952B2 (ja) * | 2016-06-24 | 2020-07-22 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102458660B1 (ko) | 2016-08-03 | 2022-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| JP2018036290A (ja) * | 2016-08-29 | 2018-03-08 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102731378B1 (ko) * | 2016-08-31 | 2024-11-15 | 엘지디스플레이 주식회사 | 멀티 타입의 박막 트랜지스터를 포함하는 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
| US10714552B2 (en) * | 2016-09-05 | 2020-07-14 | Sharp Kabushiki Kaisha | Active matrix substrate having plurality of circuit thin film transistors and pixel thin film transistors |
| JP6832656B2 (ja) | 2016-09-14 | 2021-02-24 | 株式会社ジャパンディスプレイ | 半導体装置の製造方法 |
| JP2018049227A (ja) * | 2016-09-23 | 2018-03-29 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
| KR102541552B1 (ko) | 2016-11-30 | 2023-06-07 | 엘지디스플레이 주식회사 | 트랜지스터 기판 및 이를 이용한 유기발광표시패널과 유기발광표시장치 |
| JP6706570B2 (ja) * | 2016-12-05 | 2020-06-10 | 株式会社Ｊｏｌｅｄ | 半導体装置、半導体装置の製造方法および表示装置 |
| KR102733082B1 (ko) * | 2016-12-30 | 2024-11-22 | 엘지디스플레이 주식회사 | 구동 박막 트랜지스터 및 이를 이용한 유기 발광 표시 장치 |
| KR102736793B1 (ko) | 2017-01-05 | 2024-12-04 | 삼성디스플레이 주식회사 | 주사 구동부 및 이를 포함하는 표시 장치 |
| CN110476255B (zh) * | 2017-03-29 | 2023-09-19 | 夏普株式会社 | 半导体装置以及半导体装置的制造方法 |
| CN106952928B (zh) * | 2017-03-30 | 2018-10-23 | 深圳市华星光电技术有限公司 | 一种tft背板的制作方法及tft背板 |
| CN107026178B (zh) * | 2017-04-28 | 2019-03-15 | 深圳市华星光电技术有限公司 | 一种阵列基板、显示装置及其制作方法 |
| JP7250558B2 (ja) | 2019-02-19 | 2023-04-03 | 株式会社ジャパンディスプレイ | 表示装置及び半導体装置 |
| WO2020184533A1 (ja) | 2019-03-11 | 2020-09-17 | 株式会社ジャパンディスプレイ | 表示装置及び半導体装置 |
| JP7464400B2 (ja) * | 2019-06-14 | 2024-04-09 | Ｔｉａｎｍａ Ｊａｐａｎ株式会社 | 薄膜デバイス |
| CN110289269A (zh) * | 2019-06-26 | 2019-09-27 | 上海天马微电子有限公司 | 一种阵列基板、显示面板和显示装置 |
| CN111081719A (zh) * | 2019-12-12 | 2020-04-28 | 武汉华星光电半导体显示技术有限公司 | 一种阵列基板及其制造方法 |
| CN111179742A (zh) * | 2020-02-12 | 2020-05-19 | 武汉华星光电技术有限公司 | 一种显示面板、栅极驱动电路及电子装置 |
| CN113192986B (zh) * | 2021-04-27 | 2023-01-10 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
| WO2024166389A1 (ja) * | 2023-02-10 | 2024-08-15 | シャープディスプレイテクノロジー株式会社 | 表示装置 |
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| JPH1184418A (ja) | 1997-09-08 | 1999-03-26 | Sanyo Electric Co Ltd | 表示装置 |
| JPH11274512A (ja) | 1998-03-26 | 1999-10-08 | Toshiba Corp | 薄膜トランジスタ装置 |
| JP2000155313A (ja) * | 2000-01-01 | 2000-06-06 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型液晶表示装置 |
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| JP5060738B2 (ja) | 2006-04-28 | 2012-10-31 | 株式会社ジャパンディスプレイイースト | 画像表示装置 |
| TWI858965B (zh) * | 2006-05-16 | 2024-10-11 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
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| KR101782176B1 (ko) * | 2009-07-18 | 2017-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| KR101073542B1 (ko) * | 2009-09-03 | 2011-10-17 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| JP5275515B2 (ja) * | 2010-04-30 | 2013-08-28 | シャープ株式会社 | 回路基板および表示装置 |
-
2012
- 2012-06-18 WO PCT/JP2012/003960 patent/WO2012176422A1/ja not_active Ceased
- 2012-06-18 SG SG2014013833A patent/SG2014013833A/en unknown
- 2012-06-18 JP JP2013521441A patent/JP6215053B2/ja active Active
- 2012-06-18 CN CN201280041110.1A patent/CN103765494B/zh active Active
- 2012-06-18 CA CA2845768A patent/CA2845768A1/en not_active Abandoned
- 2012-06-18 US US14/128,437 patent/US10177170B2/en active Active
- 2012-06-18 SG SG10201605237SA patent/SG10201605237SA/en unknown
-
2016
- 2016-06-16 JP JP2016120053A patent/JP2016194703A/ja active Pending
-
2018
- 2018-11-29 US US16/203,732 patent/US10438973B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CA2845768A1 (en) | 2012-12-27 |
| SG10201605237SA (en) | 2016-08-30 |
| US10438973B2 (en) | 2019-10-08 |
| JP2016194703A (ja) | 2016-11-17 |
| JP6215053B2 (ja) | 2017-10-18 |
| CN103765494B (zh) | 2016-05-04 |
| WO2012176422A1 (ja) | 2012-12-27 |
| US10177170B2 (en) | 2019-01-08 |
| JPWO2012176422A1 (ja) | 2015-02-23 |
| US20190096922A1 (en) | 2019-03-28 |
| US20140131703A1 (en) | 2014-05-15 |
| CN103765494A (zh) | 2014-04-30 |
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