SG148935A1 - Manufacturing method of single crystal - Google Patents

Manufacturing method of single crystal

Info

Publication number
SG148935A1
SG148935A1 SG200804209-5A SG2008042095A SG148935A1 SG 148935 A1 SG148935 A1 SG 148935A1 SG 2008042095 A SG2008042095 A SG 2008042095A SG 148935 A1 SG148935 A1 SG 148935A1
Authority
SG
Singapore
Prior art keywords
magnetic field
silicon melt
crystal
single crystal
driving unit
Prior art date
Application number
SG200804209-5A
Other languages
English (en)
Inventor
Masamichi Ohkubo
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG148935A1 publication Critical patent/SG148935A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG200804209-5A 2007-06-08 2008-06-03 Manufacturing method of single crystal SG148935A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007152825A JP4829176B2 (ja) 2007-06-08 2007-06-08 単結晶の製造方法

Publications (1)

Publication Number Publication Date
SG148935A1 true SG148935A1 (en) 2009-01-29

Family

ID=39870400

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200804209-5A SG148935A1 (en) 2007-06-08 2008-06-03 Manufacturing method of single crystal

Country Status (7)

Country Link
US (1) US8172943B2 (fr)
EP (1) EP2031100B1 (fr)
JP (1) JP4829176B2 (fr)
KR (1) KR101033250B1 (fr)
CN (1) CN101319350B (fr)
SG (1) SG148935A1 (fr)
TW (1) TWI402384B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114993151A (zh) * 2022-05-18 2022-09-02 西安奕斯伟材料科技有限公司 测量装置和测量方法

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US20090038537A1 (en) * 2007-08-07 2009-02-12 Covalent Materials Corporation Method of pulling up silicon single crystal
JP5229017B2 (ja) * 2009-03-11 2013-07-03 信越半導体株式会社 単結晶の製造方法
ATE539182T1 (de) 2009-05-13 2012-01-15 Siltronic Ag Verfahren und vorrichtung zur züchtung eines siliciumeinzelkristalls durch schmelzung
CN102220633B (zh) * 2011-07-15 2012-11-07 西安华晶电子技术股份有限公司 一种半导体级单晶硅生产工艺
JP6206178B2 (ja) * 2013-12-27 2017-10-04 株式会社Sumco 単結晶の引上げ方法
JP2015205793A (ja) * 2014-04-21 2015-11-19 グローバルウェーハズ・ジャパン株式会社 単結晶引き上げ方法
JP2016064958A (ja) * 2014-09-25 2016-04-28 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP6471492B2 (ja) * 2014-12-24 2019-02-20 株式会社Sumco 単結晶の製造方法
KR101674822B1 (ko) 2015-08-19 2016-11-09 주식회사 엘지실트론 단결정 잉곳 성장장치 및 그 성장방법
KR101942320B1 (ko) * 2017-08-10 2019-04-08 에스케이실트론 주식회사 단결정 잉곳 성장 장치 및 이를 이용한 단결정 잉곳의 성장 방법
JP6888568B2 (ja) 2018-02-28 2021-06-16 株式会社Sumco シリコン単結晶の製造方法
DE102018217509A1 (de) 2018-10-12 2020-04-16 Siltronic Ag Vorrichtung zum Ziehen eines Einkristalls aus Halbleitermaterial nach der CZ-Methode aus einer Schmelze und Verfahren unter Verwendung der Vorrichtung
CN109537046A (zh) * 2018-11-30 2019-03-29 邢台晶龙新能源有限责任公司 一种大热场单晶炉
CN110923810A (zh) * 2019-12-11 2020-03-27 包头美科硅能源有限公司 大尺寸单晶硅等径生长过程中调控液面位置的装置及工艺
CN111826707A (zh) * 2020-07-27 2020-10-27 邢台晶龙新能源有限责任公司 单晶炉停炉预防热场损坏方法

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JP2546736B2 (ja) * 1990-06-21 1996-10-23 信越半導体株式会社 シリコン単結晶引上方法
JPH08231294A (ja) 1995-02-24 1996-09-10 Toshiba Ceramics Co Ltd 水平磁界下シリコン単結晶引上方法
JP2940437B2 (ja) 1995-06-01 1999-08-25 信越半導体株式会社 単結晶の製造方法及び装置
JP3520883B2 (ja) * 1995-12-29 2004-04-19 信越半導体株式会社 単結晶の製造方法
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
US6632280B2 (en) * 2000-01-31 2003-10-14 Shin-Etsu Handotai Co., Ltd. Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal
WO2002010485A1 (fr) * 2000-07-28 2002-02-07 Shin-Etsu Handotai Co.,Ltd. Procede et dispositif pour fabriquer un monocristal de semiconducteur
JP3598972B2 (ja) * 2000-12-20 2004-12-08 三菱住友シリコン株式会社 シリコン単結晶の製造方法
JP4055362B2 (ja) * 2000-12-28 2008-03-05 信越半導体株式会社 単結晶育成方法および単結晶育成装置
JP4951186B2 (ja) 2002-12-05 2012-06-13 株式会社Ｓｕｍｃｏ 単結晶成長方法
JP4801869B2 (ja) * 2002-12-12 2011-10-26 株式会社Ｓｕｍｃｏ 単結晶成長方法
JP4153293B2 (ja) 2002-12-17 2008-09-24 コバレントマテリアル株式会社 シリコン単結晶引上方法
JP4501507B2 (ja) 2004-04-06 2010-07-14 株式会社Ｓｕｍｃｏ シリコン単結晶育成方法
JP4483729B2 (ja) * 2005-07-25 2010-06-16 株式会社Ｓｕｍｃｏ シリコン単結晶製造方法
KR100840751B1 (ko) * 2005-07-26 2008-06-24 주식회사 실트론 고품질 실리콘 단결정 잉곳 제조 방법, 성장 장치 및그로부터 제조된 잉곳 , 웨이퍼
JP4631717B2 (ja) * 2006-01-19 2011-02-16 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法
JP4919343B2 (ja) * 2007-02-06 2012-04-18 コバレントマテリアル株式会社 単結晶引上装置
KR100954291B1 (ko) * 2008-01-21 2010-04-26 주식회사 실트론 고품질의 반도체 단결정 잉곳 제조장치 및 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114993151A (zh) * 2022-05-18 2022-09-02 西安奕斯伟材料科技有限公司 测量装置和测量方法

Also Published As

Publication number Publication date
CN101319350A (zh) 2008-12-10
EP2031100A1 (fr) 2009-03-04
KR20080108000A (ko) 2008-12-11
US20080302294A1 (en) 2008-12-11
US8172943B2 (en) 2012-05-08
CN101319350B (zh) 2011-08-03
JP2008303116A (ja) 2008-12-18
TW200848555A (en) 2008-12-16
TWI402384B (zh) 2013-07-21
EP2031100B1 (fr) 2011-10-26
KR101033250B1 (ko) 2011-05-06
JP4829176B2 (ja) 2011-12-07

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