EA200970941A1 - Способ и устройство для получения монокристалла - Google Patents

Способ и устройство для получения монокристалла

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Publication number
EA200970941A1
EA200970941A1 EA200970941A EA200970941A EA200970941A1 EA 200970941 A1 EA200970941 A1 EA 200970941A1 EA 200970941 A EA200970941 A EA 200970941A EA 200970941 A EA200970941 A EA 200970941A EA 200970941 A1 EA200970941 A1 EA 200970941A1
Authority
EA
Eurasian Patent Office
Prior art keywords
single crystal
melting zone
obtaining
initiating
clockwise
Prior art date
Application number
EA200970941A
Other languages
English (en)
Other versions
EA017453B1 (ru
Inventor
Пер Вобенгор
Анна Нильсен
Теис Лет Ларсен
Ян Эювинг Петерсен
Леиф Йенсен
Original Assignee
Топсил Семикондактор Материалз А/С
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38754122&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EA200970941(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Топсил Семикондактор Материалз А/С filed Critical Топсил Семикондактор Материалз А/С
Publication of EA200970941A1 publication Critical patent/EA200970941A1/ru
Publication of EA017453B1 publication Critical patent/EA017453B1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26—Stirring of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Abstract

Представлен способ получения монокристалла, включающий пропускание поликристаллического стержня (1) через область нагревания (12) для создания зоны (3) плавления, наложение магнитного поля на зону плавления и инициирование роста монокристалла (5) при затвердевании расплавленного материала на затравке (4) монокристалла. Растущий монокристалл вращается в режиме попеременного вращения между направлениями вращения по часовой стрелке и против часовой стрелки. Способ применим для получения кремниевых монокристаллов, имеющих однородные электрические характеристики. Также раскрыто устройство для исполнения названного способа.
EA200970941A 2007-04-13 2007-04-13 Способ и устройство для получения монокристалла EA017453B1 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DK2007/050044 WO2008125104A1 (en) 2007-04-13 2007-04-13 Method and apparatus for producing a single crystal

Publications (2)

Publication Number Publication Date
EA200970941A1 true EA200970941A1 (ru) 2010-04-30
EA017453B1 EA017453B1 (ru) 2012-12-28

Family

ID=38754122

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200970941A EA017453B1 (ru) 2007-04-13 2007-04-13 Способ и устройство для получения монокристалла

Country Status (9)

Country Link
US (1) US20100107968A1 (ru)
EP (1) EP2142686B1 (ru)
JP (1) JP5485136B2 (ru)
KR (1) KR20100016121A (ru)
CN (1) CN101680108A (ru)
CA (1) CA2688739C (ru)
DK (1) DK2142686T3 (ru)
EA (1) EA017453B1 (ru)
WO (1) WO2008125104A1 (ru)

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JP4831203B2 (ja) * 2009-04-24 2011-12-07 信越半導体株式会社 半導体単結晶の製造方法および半導体単結晶の製造装置
DK2679706T3 (en) * 2011-02-23 2018-12-17 Shinetsu Handotai Kk PROCEDURE FOR MANUFACTURING N-TYPE SILICON MONO CRYSTAL
JP5234148B2 (ja) * 2011-08-04 2013-07-10 信越半導体株式会社 半導体単結晶の製造方法および半導体単結晶の製造装置
JP5594257B2 (ja) * 2011-08-19 2014-09-24 信越半導体株式会社 単結晶製造方法
DE102011089429A1 (de) * 2011-12-21 2013-06-27 Siltronic Ag Verfahren und Vorrichtung zur Herstellung eines Einkristalls
CN102899716B (zh) * 2012-09-14 2015-04-08 北京京运通科技股份有限公司 一种双向平动机构及区熔单晶炉
CN103114325A (zh) * 2013-02-25 2013-05-22 天津市环欧半导体材料技术有限公司 气相掺杂区熔硅单晶的生产方法
CN103114326A (zh) * 2013-02-25 2013-05-22 天津市环欧半导体材料技术有限公司 一种区熔气相掺杂硅单晶的生产方法
JP5888264B2 (ja) * 2013-02-28 2016-03-16 信越半導体株式会社 半導体単結晶の製造方法
US9255343B2 (en) 2013-03-08 2016-02-09 Ut-Battelle, Llc Iron-based composition for magnetocaloric effect (MCE) applications and method of making a single crystal
CN103539136B (zh) * 2013-10-29 2015-09-02 新疆华莎能源股份有限公司 一种工业化生产高纯镁橄榄石晶体材料的方法
DE102014226419A1 (de) * 2014-12-18 2016-06-23 Siltronic Ag Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone
JP5892527B1 (ja) * 2015-01-06 2016-03-23 信越化学工業株式会社 太陽電池用ｆｚシリコン単結晶の製造方法及び太陽電池の製造方法
DK3414367T3 (da) 2016-02-08 2020-05-25 Topsil Globalwafers As Fosfordoteret siliciumenkeltkrystal
DE102017202311A1 (de) 2017-02-14 2018-08-16 Siltronic Ag Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren
DE102017202420A1 (de) 2017-02-15 2018-08-16 Siltronic Ag Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren
DE102017202413A1 (de) * 2017-02-15 2018-08-16 Siltronic Ag Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren
DE102018210317A1 (de) 2018-06-25 2020-01-02 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Halbleitermaterial gemäß der FZ-Methode, Vorrichtung zur Durchführung des Verfahrens und Halbleiterscheibe aus Silizium
EP4144894A1 (de) 2021-09-07 2023-03-08 Siltronic AG Verfahren zum herstellen eines einkristalls aus silicium
CN113943973A (zh) * 2021-10-26 2022-01-18 中国电子科技集团公司第四十六研究所 一种拉制高电阻率区熔单晶硅的工艺方法
EP4312248A1 (en) 2022-07-27 2024-01-31 Siltronic AG A heteroepitaxial wafer for the deposition of gallium nitride

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DD263310A1 (de) * 1987-08-17 1988-12-28 Akad Wissenschaften Ddr Verfahren zur halbleiterkristallzuechtung aus elektrisch leitfaehigen schmelzen
DE3805118A1 (de) * 1988-02-18 1989-08-24 Wacker Chemitronic Verfahren zum tiegelfreien zonenziehen von halbleiterstaeben und induktionsheizspule zu seiner durchfuehrung
EP0504929B1 (en) * 1991-03-22 1996-08-28 Shin-Etsu Handotai Company Limited Method of growing silicon monocrystalline rod
JP2623390B2 (ja) * 1991-03-22 1997-06-25 信越半導体株式会社 シリコン単結晶棒の成長方法
JP2874722B2 (ja) * 1993-06-18 1999-03-24 信越半導体株式会社 シリコン単結晶の成長方法及び装置
JP2820027B2 (ja) * 1994-05-24 1998-11-05 信越半導体株式会社 半導体単結晶の成長方法
JP2002249393A (ja) * 2001-02-15 2002-09-06 Komatsu Electronic Metals Co Ltd Ｆｚ法半導体単結晶成長方法
DE10137856B4 (de) * 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
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DE10216609B4 (de) * 2002-04-15 2005-04-07 Siltronic Ag Verfahren zur Herstellung der Halbleiterscheibe

Also Published As

Publication number Publication date
EP2142686B1 (en) 2018-12-12
CN101680108A (zh) 2010-03-24
DK2142686T3 (en) 2019-04-08
KR20100016121A (ko) 2010-02-12
US20100107968A1 (en) 2010-05-06
CA2688739A1 (en) 2008-10-23
JP5485136B2 (ja) 2014-05-07
CA2688739C (en) 2015-05-26
EP2142686A1 (en) 2010-01-13
WO2008125104A1 (en) 2008-10-23
JP2010523459A (ja) 2010-07-15
EA017453B1 (ru) 2012-12-28

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MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM RU