ATE474076T1 - Vorrichtung zum ziehen von einkristallen aus einer schmelze - Google Patents

Vorrichtung zum ziehen von einkristallen aus einer schmelze

Info

Publication number
ATE474076T1
ATE474076T1 AT05728070T AT05728070T ATE474076T1 AT E474076 T1 ATE474076 T1 AT E474076T1 AT 05728070 T AT05728070 T AT 05728070T AT 05728070 T AT05728070 T AT 05728070T AT E474076 T1 ATE474076 T1 AT E474076T1
Authority
AT
Austria
Prior art keywords
melt
thermal zone
single crystal
thermal
upper thermal
Prior art date
Application number
AT05728070T
Other languages
English (en)
Inventor
Vladimir Amosov
Original Assignee
Amosov Vladimir Iljich
Pusch Bernard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from RU2004123876/15A external-priority patent/RU2261297C1/ru
Priority claimed from RU2004123875/15A external-priority patent/RU2261296C1/ru
Application filed by Amosov Vladimir Iljich, Pusch Bernard filed Critical Amosov Vladimir Iljich
Application granted granted Critical
Publication of ATE474076T1 publication Critical patent/ATE474076T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Glass Compositions (AREA)
AT05728070T 2004-08-05 2005-03-24 Vorrichtung zum ziehen von einkristallen aus einer schmelze ATE474076T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
RU2004123876/15A RU2261297C1 (ru) 2004-08-05 2004-08-05 Способ выращивания монокристаллов из расплава методом амосова
RU2004123875/15A RU2261296C1 (ru) 2004-08-05 2004-08-05 Устройство для выращивания монокристаллов из расплава
PCT/EP2005/003240 WO2006012925A1 (en) 2004-08-05 2005-03-24 Apparatus for growing single crystals from melt

Publications (1)

Publication Number Publication Date
ATE474076T1 true ATE474076T1 (de) 2010-07-15

Family

ID=34963196

Family Applications (2)

Application Number Title Priority Date Filing Date
AT05716404T ATE468427T1 (de) 2004-08-05 2005-03-24 Verfahren zum ziehen von einkristallen aus einer schmelze
AT05728070T ATE474076T1 (de) 2004-08-05 2005-03-24 Vorrichtung zum ziehen von einkristallen aus einer schmelze

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT05716404T ATE468427T1 (de) 2004-08-05 2005-03-24 Verfahren zum ziehen von einkristallen aus einer schmelze

Country Status (7)

Country Link
US (1) US7972439B2 (de)
EP (2) EP1774069B1 (de)
JP (1) JP2008508187A (de)
KR (1) KR20070039607A (de)
AT (2) ATE468427T1 (de)
DE (2) DE602005021364D1 (de)
WO (2) WO2006012924A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7348076B2 (en) * 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
MX2009003120A (es) * 2006-09-22 2009-04-06 Saint Gobain Ceramics Metodo para zafiro de plano c y aparato.
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
EP2596284A4 (de) * 2010-07-19 2015-04-29 Rensselaer Polytech Inst Feststoff-vollspektrums-weisslichtquelle, verfahren zu ihrer herstellung und anwendungen davon
KR101263082B1 (ko) * 2010-11-15 2013-05-09 주식회사 엘지실트론 사파이어 잉곳 성장장치
TWI529265B (zh) 2013-03-15 2016-04-11 聖高拜陶器塑膠公司 以斜角熱遮板製造藍寶石薄片之裝置及方法
CN103160920A (zh) * 2013-03-22 2013-06-19 管文礼 单晶生长炉的加热体结构
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
JP7049119B2 (ja) * 2018-01-19 2022-04-06 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2122768A5 (en) * 1971-01-22 1972-09-01 Fizichesky Inst Imen Ruby single crystals - prodn in cold crucibles in an oxidising atmos
JPS6046993A (ja) * 1983-08-23 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上装置
JPS60103097A (ja) * 1983-11-08 1985-06-07 Sumitomo Electric Ind Ltd 単結晶引上装置
JPS61186291A (ja) * 1985-02-12 1986-08-19 Sumitomo Electric Ind Ltd 化合物半導体単結晶の製造方法
DD290226A5 (de) * 1989-12-04 1991-05-23 Carl Zeiss Jena Gmbh,De Verfahren zur zuechtung transparenter oxidischer einkristalle hoher brechzahl nach der czochalski-methode
JPH0743224B2 (ja) * 1990-06-23 1995-05-15 徹 勝亦 Ｕ字形発熱体による抵抗炉
US5132091A (en) * 1990-12-17 1992-07-21 General Electric Company Apparatus and method employing focussed radiative heater for control of solidification interface shape in a crystal growth process
RU2056463C1 (ru) * 1992-04-03 1996-03-20 Михаил Иванович Мусатов Способ выращивания тугоплавких монокристаллов
RU2054495C1 (ru) * 1992-06-19 1996-02-20 Национальный Научный Центр "Харьковский Физико-Технический Институт" Способ выращивания монокристаллов арсенида галлия для изготовления подложек интегральных схем
US5690734A (en) * 1995-03-22 1997-11-25 Ngk Insulators, Ltd. Single crystal growing method
US7014707B2 (en) * 1999-01-20 2006-03-21 Canon Kabushiki Kaisha Apparatus and process for producing crystal article, and thermocouple used therein
TWI265217B (en) * 2002-11-14 2006-11-01 Komatsu Denshi Kinzoku Kk Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal
RU2222644C1 (ru) * 2003-03-26 2004-01-27 Амосов Владимир Ильич Устройство для выращивания монокристаллов из расплава

Also Published As

Publication number Publication date
DE602005021364D1 (de) 2010-07-01
EP1774069A1 (de) 2007-04-18
EP1774068B1 (de) 2010-05-19
WO2006012924A1 (en) 2006-02-09
WO2006012925A1 (en) 2006-02-09
US20080282968A1 (en) 2008-11-20
JP2008508187A (ja) 2008-03-21
US7972439B2 (en) 2011-07-05
ATE468427T1 (de) 2010-06-15
KR20070039607A (ko) 2007-04-12
DE602005022316D1 (de) 2010-08-26
EP1774069B1 (de) 2010-07-14
EP1774068A1 (de) 2007-04-18

Similar Documents

Publication Publication Date Title
RU2012113230A (ru) Способ и устройство для выращивания монокристаллов сапфира
CA2663382A1 (en) C-plane sapphire method and apparatus
ATE474076T1 (de) Vorrichtung zum ziehen von einkristallen aus einer schmelze
EA200970941A1 (ru) Способ и устройство для получения монокристалла
RU2011101453A (ru) Системы и способы выращивания монокристаллических кремниевых слитков путем направленного отверждения
JP2008503427A5 (de)
WO2009140406A3 (en) Crystal growth apparatus for solar cell manufacturing
WO2011072278A3 (en) Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same
TW200500507A (en) Process for producing single crystal
Novoselov Growth of large sapphire crystals: Lessons learned
CN206204483U (zh) 一种应用非接触测温的磷化铟单晶炉
CN2559657Y (zh) 一种双控温晶体生长炉
PL411695A1 (pl) Sposób wytwarzania długich kryształów węglika krzemu z fazy gazowej
CN205313715U (zh) 一种温场梯度水平移动法制备片状单晶的装置
CN204959080U (zh) 一种温控蓝宝石生长炉
CN201031264Y (zh) 多元化合物半导体单晶的生长装置
CN105369361B (zh) 一种温场移动制备蓝宝石单晶体的方法及装置
CN105401215B (zh) 一种用于制备大片状蓝宝石单晶体的装置及方法
CN208685104U (zh) 一种多坩埚晶体生长炉
US9945613B2 (en) Heat exchangers in sapphire processing
CN206706251U (zh) 籽晶夹具和蓝宝石长晶设备
CN208219010U (zh) 一种提拉单晶炉装置
RU2014108691A (ru) Способ получения термоэлектрических материалов
JPS55126597A (en) Single crystal growing method
RU2008119071A (ru) Способ выращивания монокристаллов германия диаметром до 6 дюймов методом отф

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties