SG146535A1 - Semiconductor wafer and process for its production - Google Patents

Semiconductor wafer and process for its production

Info

Publication number
SG146535A1
SG146535A1 SG200801645-3A SG2008016453A SG146535A1 SG 146535 A1 SG146535 A1 SG 146535A1 SG 2008016453 A SG2008016453 A SG 2008016453A SG 146535 A1 SG146535 A1 SG 146535A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafer
production
lattice constant
relates
monocrystalline
Prior art date
Application number
SG200801645-3A
Other languages
English (en)
Inventor
Thomas Schroeder
Peter Storck
Hans-Joachim Muessig
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG146535A1 publication Critical patent/SG146535A1/en

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    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7645517B2 (en) * 2000-08-08 2010-01-12 Translucent, Inc. Rare earth-oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon
US7902546B2 (en) * 2000-08-08 2011-03-08 Translucent, Inc. Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
US7655327B2 (en) * 2003-12-29 2010-02-02 Translucent, Inc. Composition comprising rare-earth dielectric
US7709826B2 (en) * 2004-12-28 2010-05-04 Translucent, Inc. Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon
US7928317B2 (en) 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
US7807917B2 (en) 2006-07-26 2010-10-05 Translucent, Inc. Thermoelectric and pyroelectric energy conversion devices
US8106381B2 (en) * 2006-10-18 2012-01-31 Translucent, Inc. Semiconductor structures with rare-earths
US7675117B2 (en) * 2006-11-14 2010-03-09 Translucent, Inc. Multi-gate field effect transistor
US8071872B2 (en) 2007-06-15 2011-12-06 Translucent Inc. Thin film semi-conductor-on-glass solar cell devices
US8039738B2 (en) * 2007-07-26 2011-10-18 Translucent, Inc. Active rare earth tandem solar cell
US8049100B2 (en) * 2007-07-26 2011-11-01 Translucent, Inc. Multijunction rare earth solar cell
US8039737B2 (en) * 2007-07-26 2011-10-18 Translucent, Inc. Passive rare earth tandem solar cell
US8039736B2 (en) * 2008-08-18 2011-10-18 Andrew Clark Photovoltaic up conversion and down conversion using rare earths
US20120183767A1 (en) * 2010-02-19 2012-07-19 Rytis Dargis Hexagonal reo template buffer for iii-n layers on silicon
US8542437B1 (en) 2010-03-09 2013-09-24 Translucent, Inc. Earth abundant photonic structures
US20120104567A1 (en) * 2010-11-01 2012-05-03 Andrew Clark IIIOxNy ON REO/Si
US8753942B2 (en) * 2010-12-01 2014-06-17 Intel Corporation Silicon and silicon germanium nanowire structures
KR101226958B1 (ko) * 2011-01-18 2013-01-28 연세대학교 산학협력단 액상 공정 산화물 박막의 제조 방법, 이를 이용한 전자 소자 및 박막 트랜지스터
US8637381B2 (en) 2011-10-17 2014-01-28 International Business Machines Corporation High-k dielectric and silicon nitride box region
CN102427068B (zh) * 2011-12-02 2014-06-18 中国科学院上海微系统与信息技术研究所 单片集成具有晶格失配的晶体模板及其制作方法
US9496132B2 (en) * 2012-03-20 2016-11-15 Translucent, Inc. Nucleation of III-N on REO templates
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
US8765563B2 (en) * 2012-09-28 2014-07-01 Intel Corporation Trench confined epitaxially grown device layer(s)
US8501635B1 (en) * 2012-09-29 2013-08-06 Translucent, Inc. Modification of REO by subsequent III-N EPI process
US8878188B2 (en) * 2013-02-22 2014-11-04 Translucent, Inc. REO gate dielectric for III-N device on Si substrate
EP2779213B1 (en) 2013-03-12 2015-05-06 Siltronic AG Semiconductor wafer with a layer of AlzGa1-zN and process for producing it
US9064789B2 (en) * 2013-08-12 2015-06-23 International Business Machines Corporation Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
US8846504B1 (en) * 2013-11-08 2014-09-30 Translucent, Inc. GaN on Si(100) substrate using epi-twist
US10079170B2 (en) * 2014-01-23 2018-09-18 Globalwafers Co., Ltd. High resistivity SOI wafers and a method of manufacturing thereof
US9425262B2 (en) 2014-05-29 2016-08-23 Fairchild Semiconductor Corporation Configuration of portions of a power device within a silicon carbide crystal
JP6056827B2 (ja) * 2014-09-30 2017-01-11 株式会社デンソー 回転電機制御装置
US9613803B2 (en) * 2015-04-30 2017-04-04 International Business Machines Corporation Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same
WO2017019096A1 (en) * 2015-07-30 2017-02-02 Halliburton Energy Services, Inc. Integrated computational elements incorporating a stress relief layer
WO2017165197A1 (en) * 2016-03-23 2017-09-28 IQE, plc Epitaxial metal oxide as buffer for epitaxial iii-v layers
US10332857B2 (en) * 2016-06-02 2019-06-25 Iqe Plc Rare earth pnictides for strain management
JP6645408B2 (ja) * 2016-12-09 2020-02-14 信越半導体株式会社 シリコン単結晶製造方法及びシリコン単結晶ウェーハ
FR3064398B1 (fr) * 2017-03-21 2019-06-07 Soitec Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure
SG11201912265WA (en) * 2017-07-06 2020-01-30 Applied Materials Inc Methods of forming a stack of multiple deposited semiconductor layers
WO2021248099A1 (en) * 2020-06-05 2021-12-09 Ambature, Inc. A-axis josephson junctions with improved smoothness
CN114038916A (zh) * 2021-10-08 2022-02-11 华南理工大学 绝缘薄膜及其薄膜晶体管以及用途
CN117637954B (zh) * 2024-01-25 2024-04-09 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246050A (en) * 1979-07-23 1981-01-20 Varian Associates, Inc. Lattice constant grading in the Aly Ca1-y As1-x Sbx alloy system
JPH0618174B2 (ja) * 1986-07-08 1994-03-09 シャープ株式会社 半導体基板
FR2657599B1 (fr) * 1990-01-30 1992-04-03 Loire Atlantique Procedes Chim Procede d'elaboration de composes binaires du soufre.
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5088329A (en) * 1990-05-07 1992-02-18 Sahagen Armen N Piezoresistive pressure transducer
JP3333325B2 (ja) * 1993-08-26 2002-10-15 株式会社東芝 半導体装置、半導体装置のシミュレーション方法、及び半導体装置のシミュレータ
US5912068A (en) * 1996-12-05 1999-06-15 The Regents Of The University Of California Epitaxial oxides on amorphous SiO2 on single crystal silicon
JP3813740B2 (ja) * 1997-07-11 2006-08-23 Ｔｄｋ株式会社 電子デバイス用基板
US6861356B2 (en) * 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
JP3669860B2 (ja) * 1999-03-10 2005-07-13 Ｔｄｋ株式会社 積層薄膜
JP3817068B2 (ja) * 1998-04-28 2006-08-30 Ｔｄｋ株式会社 積層薄膜
US6258459B1 (en) * 1998-04-28 2001-07-10 Tdk Corporation Multilayer thin film
US7199015B2 (en) * 2000-08-08 2007-04-03 Translucent Photonics, Inc. Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
JP2002314072A (ja) * 2001-04-19 2002-10-25 Nec Corp 高誘電体薄膜を備えた半導体装置及びその製造方法並びに誘電体膜の成膜装置
US20020158245A1 (en) * 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layers
US6933566B2 (en) * 2001-07-05 2005-08-23 International Business Machines Corporation Method of forming lattice-matched structure on silicon and structure formed thereby
US6787433B2 (en) * 2001-09-19 2004-09-07 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP4115789B2 (ja) * 2001-09-19 2008-07-09 株式会社東芝 半導体装置の製造方法
JP2003282439A (ja) * 2002-03-27 2003-10-03 Seiko Epson Corp デバイス用基板およびデバイス用基板の製造方法
JP4951202B2 (ja) * 2002-05-07 2012-06-13 エーエスエム アメリカ インコーポレイテッド シリコンオンインシュレータ構造の製造方法
US20060157733A1 (en) * 2003-06-13 2006-07-20 Gerald Lucovsky Complex oxides for use in semiconductor devices and related methods
JP4105044B2 (ja) * 2003-06-13 2008-06-18 株式会社東芝 電界効果トランジスタ
JP2006301089A (ja) * 2005-04-18 2006-11-02 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置およびその製造方法
KR101124503B1 (ko) * 2005-06-24 2012-03-15 삼성전자주식회사 고배향성 실리콘층 형성방법 및 고배향성 실리콘층적층기판
US7304020B1 (en) * 2006-08-21 2007-12-04 Dmitry Tananko Nano-particle metal treatment composition for creating a ceramic-metal layer

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CN101276791A (zh) 2008-10-01
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EP1975988A1 (en) 2008-10-01
EP1975988B1 (en) 2015-02-25
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US20100221869A1 (en) 2010-09-02
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JP2013102212A (ja) 2013-05-23
JP5490271B2 (ja) 2014-05-14
JP2008294412A (ja) 2008-12-04
US20080241519A1 (en) 2008-10-02
US7785706B2 (en) 2010-08-31
JP5693497B2 (ja) 2015-04-01

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