SG140608A1 - Semiconductor construction with isolation regions for dram cell and production method - Google Patents
Semiconductor construction with isolation regions for dram cell and production methodInfo
- Publication number
- SG140608A1 SG140608A1 SG200801563-8A SG2008015638A SG140608A1 SG 140608 A1 SG140608 A1 SG 140608A1 SG 2008015638 A SG2008015638 A SG 2008015638A SG 140608 A1 SG140608 A1 SG 140608A1
- Authority
- SG
- Singapore
- Prior art keywords
- production method
- constructions
- isolation regions
- dram cell
- semiconductor construction
- Prior art date
Links
- 238000010276 construction Methods 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000002955 isolation Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/925,789 US7122425B2 (en) | 2004-08-24 | 2004-08-24 | Methods of forming semiconductor constructions |
Publications (1)
Publication Number | Publication Date |
---|---|
SG140608A1 true SG140608A1 (en) | 2008-03-28 |
Family
ID=34959107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200801563-8A SG140608A1 (en) | 2004-08-24 | 2004-10-19 | Semiconductor construction with isolation regions for dram cell and production method |
Country Status (7)
Country | Link |
---|---|
US (2) | US7122425B2 (zh) |
EP (2) | EP2330620B1 (zh) |
JP (1) | JP5071899B2 (zh) |
CN (1) | CN101010799B (zh) |
SG (1) | SG140608A1 (zh) |
TW (1) | TWI248197B (zh) |
WO (1) | WO2006022765A1 (zh) |
Families Citing this family (62)
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US10355002B2 (en) | 2016-08-31 | 2019-07-16 | Micron Technology, Inc. | Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry |
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KR102134532B1 (ko) | 2016-08-31 | 2020-07-20 | 마이크론 테크놀로지, 인크 | 메모리 셀들 및 메모리 어레이들 |
KR102195321B1 (ko) | 2016-08-31 | 2020-12-24 | 마이크론 테크놀로지, 인크 | 감지 증폭기 구성물 |
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JP2001102549A (ja) * | 2000-08-28 | 2001-04-13 | Toshiba Corp | 半導体記憶装置 |
US6482420B2 (en) | 2000-12-27 | 2002-11-19 | Noboru Huziwara | Composition having bactericidal action, cosmetics containing said composition and ultraviolet ray screening agent |
DE10111755C1 (de) * | 2001-03-12 | 2002-05-16 | Infineon Technologies Ag | Verfahren zur Herstellung einer Speicherzelle eines Halbleiterspeichers |
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-
2004
- 2004-08-24 US US10/925,789 patent/US7122425B2/en active Active
- 2004-10-19 WO PCT/US2004/034587 patent/WO2006022765A1/en active Search and Examination
- 2004-10-19 SG SG200801563-8A patent/SG140608A1/en unknown
- 2004-10-19 EP EP11001773.8A patent/EP2330620B1/en active Active
- 2004-10-19 JP JP2007529802A patent/JP5071899B2/ja active Active
- 2004-10-19 EP EP04795714.7A patent/EP1782467B1/en active Active
- 2004-10-19 CN CN2004800438631A patent/CN101010799B/zh active Active
- 2004-11-04 TW TW093133695A patent/TWI248197B/zh active
-
2005
- 2005-11-14 US US11/274,727 patent/US7271413B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20060046424A1 (en) | 2006-03-02 |
CN101010799A (zh) | 2007-08-01 |
TWI248197B (en) | 2006-01-21 |
EP1782467A1 (en) | 2007-05-09 |
WO2006022765A1 (en) | 2006-03-02 |
CN101010799B (zh) | 2010-05-26 |
EP2330620B1 (en) | 2020-05-13 |
US7271413B2 (en) | 2007-09-18 |
US20060063350A1 (en) | 2006-03-23 |
EP2330620A3 (en) | 2012-04-04 |
JP5071899B2 (ja) | 2012-11-14 |
US7122425B2 (en) | 2006-10-17 |
EP2330620A2 (en) | 2011-06-08 |
JP2008511165A (ja) | 2008-04-10 |
EP1782467B1 (en) | 2017-06-07 |
TW200608558A (en) | 2006-03-01 |
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