SG133537A1 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- SG133537A1 SG133537A1 SG200608735-7A SG2006087357A SG133537A1 SG 133537 A1 SG133537 A1 SG 133537A1 SG 2006087357 A SG2006087357 A SG 2006087357A SG 133537 A1 SG133537 A1 SG 133537A1
- Authority
- SG
- Singapore
- Prior art keywords
- receiving element
- light receiving
- reflection layer
- infrared ray
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 230000005540 biological transmission Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02371—Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05541—Structure
- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005361706 | 2005-12-15 | ||
JP2006310623A JP5010244B2 (ja) | 2005-12-15 | 2006-11-16 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG133537A1 true SG133537A1 (en) | 2007-07-30 |
Family
ID=37858482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200608735-7A SG133537A1 (en) | 2005-12-15 | 2006-12-15 | Semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US7986021B2 (de) |
EP (1) | EP1798769A3 (de) |
JP (1) | JP5010244B2 (de) |
KR (1) | KR20070064273A (de) |
SG (1) | SG133537A1 (de) |
TW (1) | TWI343645B (de) |
Families Citing this family (20)
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JP2007165696A (ja) * | 2005-12-15 | 2007-06-28 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP5301108B2 (ja) * | 2007-04-20 | 2013-09-25 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
JP2009032929A (ja) * | 2007-07-27 | 2009-02-12 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
TWI382477B (zh) * | 2007-08-24 | 2013-01-11 | Xintec Inc | 電子元件的晶圓級封裝及其製造方法 |
TWI375321B (en) * | 2007-08-24 | 2012-10-21 | Xintec Inc | Electronic device wafer level scale packages and fabrication methods thereof |
JP2009099591A (ja) * | 2007-10-12 | 2009-05-07 | Toshiba Corp | 固体撮像素子及びその製造方法 |
KR101446330B1 (ko) * | 2008-01-29 | 2014-10-02 | 삼성전자주식회사 | 관통 비아를 갖는 이미지 센서 |
WO2009103048A1 (en) * | 2008-02-14 | 2009-08-20 | Quantum Semiconductor Llc | Dual photo-diode cmos pixels |
JP2010103300A (ja) * | 2008-10-23 | 2010-05-06 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US8298917B2 (en) * | 2009-04-14 | 2012-10-30 | International Business Machines Corporation | Process for wet singulation using a dicing singulation structure |
JPWO2011058977A1 (ja) * | 2009-11-10 | 2013-04-04 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
CN101789414B (zh) * | 2010-02-26 | 2011-08-17 | 苏州晶方半导体科技股份有限公司 | 超薄半导体芯片封装结构及其制造工艺 |
KR101731047B1 (ko) * | 2010-12-01 | 2017-05-12 | 삼성디스플레이 주식회사 | 적외선 감지 트랜지스터, 이를 포함하는 표시 장치의 제조 방법 |
CN102592982B (zh) * | 2011-01-17 | 2017-05-03 | 精材科技股份有限公司 | 晶片封装体的形成方法 |
JP6215612B2 (ja) * | 2013-08-07 | 2017-10-18 | ソニーセミコンダクタソリューションズ株式会社 | 発光素子、発光素子ウェーハ及び電子機器 |
TWI569427B (zh) * | 2014-10-22 | 2017-02-01 | 精材科技股份有限公司 | 半導體封裝件及其製法 |
CN108450036B (zh) * | 2015-12-24 | 2023-03-28 | 京瓷株式会社 | 摄像元件安装用基板及摄像装置 |
JP2018133392A (ja) * | 2017-02-14 | 2018-08-23 | キヤノン株式会社 | 光電変換装置 |
JP7204667B2 (ja) * | 2017-04-20 | 2023-01-16 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光検出器 |
WO2020157029A1 (en) | 2019-01-29 | 2020-08-06 | Trinamix Gmbh | Optical detector |
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JP5295783B2 (ja) * | 2007-02-02 | 2013-09-18 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
JP5301108B2 (ja) * | 2007-04-20 | 2013-09-25 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
JP2008294405A (ja) * | 2007-04-25 | 2008-12-04 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
TW200845339A (en) * | 2007-05-07 | 2008-11-16 | Sanyo Electric Co | Semiconductor device and manufacturing method thereof |
JP2009032929A (ja) * | 2007-07-27 | 2009-02-12 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
CN101123231B (zh) * | 2007-08-31 | 2010-11-03 | 晶方半导体科技(苏州)有限公司 | 微机电系统的晶圆级芯片尺寸封装结构及其制造方法 |
-
2006
- 2006-11-16 JP JP2006310623A patent/JP5010244B2/ja active Active
- 2006-12-06 TW TW95145296A patent/TWI343645B/zh not_active IP Right Cessation
- 2006-12-14 KR KR20060127760A patent/KR20070064273A/ko active Search and Examination
- 2006-12-15 EP EP20060026088 patent/EP1798769A3/de not_active Withdrawn
- 2006-12-15 SG SG200608735-7A patent/SG133537A1/en unknown
- 2006-12-15 US US11/639,410 patent/US7986021B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP5010244B2 (ja) | 2012-08-29 |
US7986021B2 (en) | 2011-07-26 |
EP1798769A3 (de) | 2009-07-08 |
US20070145420A1 (en) | 2007-06-28 |
TW200731520A (en) | 2007-08-16 |
TWI343645B (en) | 2011-06-11 |
EP1798769A2 (de) | 2007-06-20 |
JP2007189198A (ja) | 2007-07-26 |
KR20070064273A (ko) | 2007-06-20 |
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