JP7204667B2 - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- JP7204667B2 JP7204667B2 JP2019556599A JP2019556599A JP7204667B2 JP 7204667 B2 JP7204667 B2 JP 7204667B2 JP 2019556599 A JP2019556599 A JP 2019556599A JP 2019556599 A JP2019556599 A JP 2019556599A JP 7204667 B2 JP7204667 B2 JP 7204667B2
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- layer
- detector
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- 239000010410 layer Substances 0.000 claims description 557
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- 239000010949 copper Substances 0.000 claims description 31
- 238000001514 detection method Methods 0.000 claims description 31
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 27
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- -1 pnictogenides Chemical class 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
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- YTRNSQPXEDGWMR-UHFFFAOYSA-N alpha-Cyclohexylmandelic acid Chemical compound C=1C=CC=CC=1C(O)(C(=O)O)C1CCCCC1 YTRNSQPXEDGWMR-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
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- SEEZIOZEUUMJME-UHFFFAOYSA-N cannabinerolic acid Natural products CCCCCC1=CC(O)=C(CC=C(C)CCC=C(C)C)C(O)=C1C(O)=O SEEZIOZEUUMJME-UHFFFAOYSA-N 0.000 description 1
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- 229910001849 group 12 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 description 1
- HWLMPLVKPZILMO-UHFFFAOYSA-N zinc mercury(1+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Hg+] HWLMPLVKPZILMO-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
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- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0887—Integrating cavities mimicking black bodies, wherein the heat propagation between the black body and the measuring element does not occur within a solid; Use of bodies placed inside the fluid stream for measurement of the temperature of gases; Use of the reemission from a surface, e.g. reflective surface; Emissivity enhancement by multiple reflections
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0803—Arrangements for time-dependent attenuation of radiation signals
- G01J5/0804—Shutters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Description
- 少なくとも1つの層を担持するように設計された回路キャリア;
- 前記回路キャリアのパーティションに配置されている反射層であって、入射光ビームを反射するように設計され、それにより、少なくとも1つの反射光ビームを生成する反射層;
- 直接的または間接的に前記反射層に隣接する基板層であって、上記入射光ビームおよび反射光ビームに対して少なくとも部分的に透明である基板層;
- 前記基板層上に配置されたセンサ層であって、上記入射光ビームおよび反射光ビームによる前記センサ層の照射に依存するようにして少なくとも1つのセンサ信号を生成するように設計されたセンサ層;そして
- センサ信号を評価することによって、少なくとも1つの情報項目を生成するように設計された評価装置、を含む。
- UVスペクトル範囲:ドープダイヤモンド(C)、酸化亜鉛(ZnO)、酸化チタン(TiO2)、窒化ガリウム(GaN)、リン化ガリウム(GaP)またはシリコンカーバイド(SiC);
- 可視スペクトル範囲:シリコン(Si)、ヒ化ガリウム(GaAs)、硫化カドミウム(CdS)、テルル化カドミウム(CdTe)、硫化銅インジウム(CuInS2;CIS)、セレン化銅インジウムガリウム(CIGS)、硫化銅亜鉛スズ(CZTS);
- IRスペクトル範囲:ヒ化インジウムガリウム(InGaAs)、シリコン(Si)、ゲルマニウム(Ge)、テルル化カドミウム(CdTe)、硫化銅インジウム(CuInS2;CIS)、セレン化銅インジウムガリウム(CIGS)、NIRスペクトル範囲7560nmから1.5μmの範囲においては、硫化銅亜鉛スズ(CZTS)、ここで、CdTe、CIS、CIGS、およびCZTSは850nmを超える波長に特に適している;2.6μm以下の波長においては、ヒ化インジウムガリウム(InGaAs);3.1μm以下の波長においては、ヒ化インジウム(InAs);3.5μm以下の波長においては、硫化鉛(PbS);5μm以下の波長においては、セレン化鉛(PbSe);5.5μm以下の波長においては、アンチモン化インジウム(InSb);16μm以下の波長においては、テルル化水銀カドミウム(MCT、HgCdTe)。
a)回路キャリアのパーティション上に、入射光ビームを少なくとも部分的に反射するように設計されている反射層を堆積する工程;
b)少なくとも部分的に透明な基板層上に感光性材料を堆積することにより、入射光ビームおよび反射光ビームによるセンサ層の照射に依存する様式で少なくとも1つのセンサ信号を生成するように設計されているセンサ層を生成する工程;そして
c)前記反射層の上に前記センサ層を担持する基板層を配置する工程;そして
d)センサ信号を受信し、センサ信号を評価することにより少なくとも1つの情報項目を生成するように設計されている評価装置を設ける工程。
https://en.wikipedia.org/wiki/List_of_integrated_circuit_package_dimensions
実施形態1:入射光ビームの光学的検出のための検出器であって、
- 少なくとも1つの層を担持するように設計された回路キャリアと、
- 前記回路キャリアのパーティションに配置されている反射層であって、入射光ビームを反射するように設計され、それにより、少なくとも1つの反射光ビームを生成する反射層と、
- 前記反射層に直接的または間接的に隣接する基板層であって、入射光ビームおよび反射光ビームに対して少なくとも部分的に透明である基板層と、
- 前記基板層上に配置されたセンサ層であって、入射光ビームおよび反射光ビームによる前記センサ層の照射に依存するようにして少なくとも1つのセンサ信号を生成するように設計されたセンサ層と、
- 前記センサ信号を評価することによって、少なくとも1つの情報項目を生成するように設計された評価装置と、を有する検出器。
a)回路キャリアのパーティション上に反射層を堆積する工程であって、前記反射層は前記入射光ビームを少なくとも部分的に反射するように設計されている工程;
b)少なくとも部分的に透明な基板層上に感光性材料を堆積することによりセンサ層を生成する工程であって、前記センサ層は前記入射光ビームと反射光ビームによるセンサ層の照射に依存する様式で少なくとも1つのセンサ信号を生成するように設計されている工程;
c)前記反射層上に前記センサ層を担持する前記基板層を配置する工程;および
d)前記評価装置を設ける工程であって、前記評価装置は、センサ信号を受信し、前記センサ信号を評価することにより少なくとも1つの情報項目を生成するように設計されている工程、
を含む方法。
112 物体
114 基板層
116 第1表面
118 第2表面
120 入射光ビーム
122 センサ層
124 反射光ビーム
126 感光性材料
128 光導電性材料
130 回路キャリア
132 プリント回路基板(PCB)
134 片面PCB
136 表面
138 反射層
140 表面
142 金層
144 粗い表面
146 接着層
148、148’ 電気接点
150 評価装置
152、152’ ボンディングワイヤ
154、154’ 接触パッド
156 カバー層
158 原子堆積層
160 第1のグラフ
162 第2のグラフ
200 検出器システム
202 カメラ
204 ヒューマンマシンインターフェース
206 娯楽装置
208 追跡システム
210、210 信号リード
212、212’ 縦方向評価ユニット、横方向評価ユニット
214 位置情報
216 制御要素
218 ユーザ
220 ビーコン装置
222 マシン
224 追跡コントローラ
Claims (16)
- 入射光ビーム(120)の光学的検出のための検出器(110)であって、
- 少なくとも1つの層を担持するように設計され、プリント回路基板(132)であるかまたはそれを含む、回路キャリア(130)と、
- 前記回路キャリア(130)のパーティションに配置され、前記入射光ビーム(120)を反射し、それにより、少なくとも1つの反射光ビーム(124)を生成するように設計された、反射層(138)と、
- 間接的に前記反射層(138)に隣接する基板層(114)であって、前記入射光ビーム(120)および反射光ビーム(124)に対して少なくとも部分的に透明である基板層(114)と、
- 前記基板層(114)上に配置されたセンサ層(122)であって、前記入射光ビームおよび反射光ビーム(124)による前記センサ層(122)の照射に依存するようにして少なくとも1つのセンサ信号を生成するように設計されたセンサ層(122)と、
- 前記センサ信号を評価することによって、少なくとも1つの情報項目を生成するように設計された評価装置(150)と、
- 前記基板層(114)と前記反射層(138)との間に配置された接着層(146)と、を含み、
前記接着層(146)は、接着物質であるか、または接着物質を含み、前記接着物質は、前記基板層(114)および前記反射層(138)を組み立てるように設計されており、
前記接着物質は、拡散反射粒子または鏡面反射粒子で満たされた有機接着剤から選択される、検出器(110)。 - 前記検出器(110)が、760nmから1000μmの範囲の赤外線スペクトル範囲の少なくとも1つのパーティションの少なくとも1つの波長を検出するように設計されている、請求項1に記載の検出器(110)。
- 前記反射層(138)は、前記入射光ビーム(120)が少なくとも部分的に前記センサ層を透過した後に前記センサ層(122)に反射して戻る様式で、前記入射光ビーム(120)を反射するように設計されている、請求項1または2に記載の検出器(110)。
- 前記反射層(138)は、前記入射光ビーム(120)に拡散反射を提供するように設計されている、請求項1から3のいずれか1つに記載の検出器(110)。
- 前記反射層(138)が粗面を示し、前記粗面が少なくとも0.01μmのRa値を示す、請求項4に記載の検出器。
- 前記反射層(138)は、金層(142)、銀層、ニッケル層、スズ層、鉛層、パラジウム層、プラチナ層、アルミニウム層、銅層、またはそれらの合金の層、のうちの少なくとも1つである、請求項1から5のいずれか1つに記載の検出器(110)。
- 前記接着層(146)は、前記入射光ビーム(120)に対して少なくとも部分的に反射性である、請求項1から6のいずれか1つに記載の検出器(110)。
- 前記センサ層(122)は、感光性材料(126)を含み、
前記感光性材料(126)は、セレン、テルル、セレン-テルル合金、金属酸化物、第4族元素または化合物、III-V族化合物、II-VI族化合物、カルコゲニド、プニクトゲニド、ハロゲン化物、および固溶体および/またはそのドープ変形、のうち1つまたは複数を含む無機光導電性材料(128)である、請求項1から7のいずれか1つに記載の検出器(110)。 - 前記カルコゲニドは、硫化鉛(PbS)、硫化銅インジウム(CIS)、セレン化銅インジウムガリウム(CIGS)、硫化銅亜鉛スズ(CZTS)、セレン化鉛(PbSe)、セレン化スズ亜鉛銅(CZTSe)、テルル化カドミウム(CdTe)、テルル化水銀カドミウム(HgCdTe)、テルル化水銀亜鉛(HgZnTe)、硫セレン化鉛(PbSSe)、銅-亜鉛-硫化スズ-セレンカルコゲニド(CZTSSe)、および固溶体および/またはそのドープ変形、からなる群から選択される、請求項8に記載の検出器(110)。
- 前記センサ層(122)に接触する少なくとも2つの個別の電気接点(148、148’)をさらに備え、
前記電気接点(148、148’)は、前記回路キャリア(130)を介してセンサ信号を前記評価装置(150)に送信するように設計されている、請求項1から9のいずれか1つに記載の検出器(110)。 - 各前記電気接点(148、148’)について、前記電気接点(148、148’)を少なくとも1つの対応する受け接点に接触させる少なくとも1つのワイヤボンド(152、152’)が、前記回路キャリア(130)上にさらに配置されている、請求項10に記載の検出器(110)。
- 少なくとも前記センサ層(122)上に配置されたカバー層(156)をさらに含み、前記カバー層(156)は、前記入射光ビーム(120)に対して少なくとも部分的に透明である、請求項1から11のいずれか1つに記載の検出器(110)。
- 前記カバー層(156)は、アルミニウム、チタン、ジルコニウム、ハフニウム、それらの混合物および/または積層物の少なくとも1つの酸化物、少なくとも1つの水酸化物、またはそれらの組み合わせを含む、請求項12に記載の検出器(110)。
- 前記センサ信号が縦方向センサ信号であって、前記縦方向センサ信号は、照射の総出力が同じ場合、前記センサ層内の前記入射光ビーム(120)のビーム断面積に依存し、前記評価装置(150)は、前記縦方向センサ信号を評価することによって、物体(112)の縦方向位置に関する少なくとも1つの情報項目を生成するようにさらに設計されている、請求項1から13のいずれか1つに記載の検出器(110)。
- 入射光ビーム(120)の光学的検出のための検出器(110)を製造する方法であって:
a)回路キャリア(130)のパーティション上に反射層(138)を堆積する工程であって、前記反射層(138)は前記入射光ビーム(120)を少なくとも部分的に反射するように設計され、前記回路キャリア(130)はプリント回路基板(132)であるかまたはそれを含んでいる、工程;
b)少なくとも部分的に透明な基板層(114)上に感光性材料(126)を堆積することによりセンサ層(122)を生成する工程であって、前記センサ層(122)は、前記入射光ビーム(120)と反射光ビーム(124)とによる前記センサ層(122)の照射に依存するようにして、少なくとも1つのセンサ信号を生成するように設計されてい
る、工程;
c)前記反射層(138)上に、前記センサ層(122)を担持する前記基板層(114)を配置する工程;
d)評価装置(150)を設ける工程であって、前記評価装置(150)は前記センサ信号を受信すると共に、前記センサ信号を評価することにより少なくとも1つの情報項目を生成するように設計されている、工程;および
e)前記基板層(114)と前記反射層(138)との間に接着層(146)を配置する工程、を含み、
前記接着層(146)は、接着物質であるか、または接着物質を含み、前記接着物質は、前記基板層(114)および前記反射層(138)を組み立てるように設計されており、
前記接着物質は、拡散反射粒子または鏡面反射粒子で満たされた有機接着剤から選択される、方法。 - 使用目的が、距離測定、位置測定、娯楽用途、セキュリティ用途、ヒューマンマシンインターフェース用途、追跡用途、走査用途、立体視、写真撮影用途、イメージング用途またはカメラ用途、少なくとも1つの空間のマップを生成するためのマッピング用途、車両用のホーミングまたは追跡ビーコン検出器、熱特性を有する物体の距離および/または位置測定、マシンビジョン用途、ロボット用途、物流用途、車両用途、飛行機用途、船舶用途、宇宙船用途、ロボット用途、医療用途、スポーツ用途、建築用途、建設用途、製造用途、マシンビジョン用途;飛行時間型検出器・レーダ・ライダー(Lidar)・超音波センサ・または干渉法から選択された少なくとも1つの検知技術と組み合わせた使用;赤外線検出用途、熱検出用途、温度計用途、熱探求用途、火炎検出用途、火災検出用途、煙検出用途、温度感知用途、分光法用途、写真複写用途、ゼログラフィ用途、排気ガス監視用途、燃焼プロセス監視用途、汚染監視用途、工業プロセス監視用途、化学プロセス監視用途、食品加工プロセス監視用途、水質監視用途、大気質監視用途、品質管理用途、温度制御用途、動作制御用途、排気制御用途、ガス感知用途、ガス分析用途、動作感知用途、化学感知用途、からなる群から選択される使用目的のための検出器(110)を参照する請求項1から14のいずれか1つに記載の検出器(110)の使用。
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Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109521397B (zh) | 2013-06-13 | 2023-03-28 | 巴斯夫欧洲公司 | 用于光学地检测至少一个对象的检测器 |
US11041718B2 (en) | 2014-07-08 | 2021-06-22 | Basf Se | Detector for determining a position of at least one object |
US11125880B2 (en) | 2014-12-09 | 2021-09-21 | Basf Se | Optical detector |
WO2016120392A1 (en) | 2015-01-30 | 2016-08-04 | Trinamix Gmbh | Detector for an optical detection of at least one object |
KR102644439B1 (ko) | 2015-07-17 | 2024-03-07 | 트리나미엑스 게엠베하 | 하나 이상의 물체를 광학적으로 검출하기 위한 검출기 |
JP2019523562A (ja) | 2016-07-29 | 2019-08-22 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光学的検出のための光センサおよび検出器 |
CN109923372B (zh) | 2016-10-25 | 2021-12-21 | 特里纳米克斯股份有限公司 | 采用集成滤波器的红外光学检测器 |
JP7241684B2 (ja) | 2016-10-25 | 2023-03-17 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 少なくとも1個の対象物の光学的な検出のための検出器 |
US11860292B2 (en) | 2016-11-17 | 2024-01-02 | Trinamix Gmbh | Detector and methods for authenticating at least one object |
KR102502094B1 (ko) | 2016-11-17 | 2023-02-21 | 트리나미엑스 게엠베하 | 적어도 하나의 피사체를 광학적으로 검출하기 위한 검출기 |
US11719818B2 (en) | 2017-03-16 | 2023-08-08 | Trinamix Gmbh | Detector for optically detecting at least one object |
EP3385692A1 (en) * | 2017-04-03 | 2018-10-10 | Indigo Diabetes N.V. | Hermeticity testing of an optical assembly |
CN109326676B (zh) * | 2017-07-31 | 2020-12-11 | 上海耕岩智能科技有限公司 | 一种光侦测薄膜、器件、显示装置、制备方法 |
US11668828B2 (en) | 2017-08-28 | 2023-06-06 | Trinamix Gmbh | Detector for determining a position of at least one object |
US11448762B2 (en) | 2017-08-28 | 2022-09-20 | Trinamix Gmbh | Range finder for determining at least one geometric information |
EP3710860A1 (en) | 2017-11-17 | 2020-09-23 | trinamiX GmbH | Detector for determining a position of at least one object |
CN112703609A (zh) * | 2018-09-12 | 2021-04-23 | Ns材料株式会社 | 红外线传感器及其制造方法 |
DE102018132955A1 (de) * | 2018-12-19 | 2020-06-25 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes bauelement |
WO2020148381A1 (en) | 2019-01-18 | 2020-07-23 | Trinamix Gmbh | Optical sensor and detector for an optical detection |
WO2020157029A1 (en) | 2019-01-29 | 2020-08-06 | Trinamix Gmbh | Optical detector |
EP3796373B1 (de) * | 2019-09-20 | 2023-06-28 | BIOTRONIK SE & Co. KG | Platinenanordnung eines implantierbaren medizinischen geräts |
JPWO2021210593A1 (ja) * | 2020-04-13 | 2021-10-21 | ||
CN111983565B (zh) * | 2020-07-31 | 2021-09-14 | 哈尔滨新光光电科技股份有限公司 | 一种波束合成器 |
EP4205183A1 (en) * | 2020-08-27 | 2023-07-05 | Institut Biosens-Istrazivacko Razvojni Institut Za Informacione Tehnologije Biosistema | Photovoltaic infrared radiation detector from iv-vi polycrystalline semiconductors |
DE102020213167A1 (de) | 2020-10-19 | 2022-04-21 | Robert Bosch Gesellschaft mit beschränkter Haftung | Fensterscheibe, optisches System und Verfahren zum Überwachen einer Fensterscheibe |
CN113363332B (zh) * | 2021-04-28 | 2022-11-15 | 东北大学秦皇岛分校 | 一种过渡族元素单掺杂的czts薄膜及其制备方法 |
WO2022234074A1 (en) * | 2021-05-07 | 2022-11-10 | Trinamix Gmbh | Device and method for monitoring an emission temperature of a radiation emitting element |
TWI802032B (zh) * | 2021-10-05 | 2023-05-11 | 鼎元光電科技股份有限公司 | 收光二極體 |
KR102636746B1 (ko) * | 2022-09-19 | 2024-02-14 | 성균관대학교산학협력단 | 적외선 검지소자 및 그 제조방법 |
CN115632076A (zh) * | 2022-10-25 | 2023-01-20 | 国科大杭州高等研究院 | 一种具有宽频光电响应的探测器件及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004179218A (ja) | 2002-11-25 | 2004-06-24 | Matsushita Electric Works Ltd | 光起電力装置およびそれを用いた半導体リレー |
JP2006186288A (ja) | 2004-09-14 | 2006-07-13 | Sony Chem Corp | 機能素子実装モジュール及びその製造方法 |
JP2008053546A (ja) | 2006-08-25 | 2008-03-06 | Tdk Corp | 受光素子 |
US20120146028A1 (en) | 2009-08-20 | 2012-06-14 | Sharp Kabushiki Kaisha | Photosensor, semiconductor device, and liquid crystal panel |
US20140124782A1 (en) | 2012-11-06 | 2014-05-08 | Samsung Electronics Co., Ltd. | Image sensor |
WO2016120392A1 (en) | 2015-01-30 | 2016-08-04 | Trinamix Gmbh | Detector for an optical detection of at least one object |
Family Cites Families (318)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL100993C (ja) | 1956-06-27 | |||
US3035176A (en) | 1959-11-23 | 1962-05-15 | Packard Bell Electronics Corp | Monoscopic range finder |
CH388657A (fr) | 1963-04-17 | 1965-02-28 | Paillard Sa | Dispositif pour détecter le maximum de netteté d'une image |
US3562785A (en) | 1968-11-20 | 1971-02-09 | Logetronics Inc | Image adjusting method |
US3564268A (en) | 1969-06-27 | 1971-02-16 | Standard Change Makers Inc | Document verifier using photovoltaic cell with light sensitive bars |
SE407976B (sv) | 1973-03-13 | 1979-04-30 | Bofors Ab | Forfarande och anordning for malfoljning |
JPS5625648B2 (ja) | 1973-04-11 | 1981-06-13 | ||
JPS5634842B2 (ja) | 1973-10-26 | 1981-08-13 | ||
FR2271590B1 (ja) | 1974-01-15 | 1978-12-01 | Thomson Brandt | |
US4079247A (en) | 1975-05-16 | 1978-03-14 | Claude Bricot | Optical focussing device |
US4256513A (en) | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
JPS55159445A (en) | 1979-05-31 | 1980-12-11 | Ricoh Co Ltd | Electrophotographic receptor |
EP0020879A1 (en) | 1979-06-06 | 1981-01-07 | Erwin Sick GmbH Optik-Elektronik | Optical electronic distance sensor |
NL187374C (nl) | 1981-07-10 | 1991-09-02 | Philips Nv | Inrichting voor het detecteren van straling. |
JPS58175091A (ja) | 1982-04-06 | 1983-10-14 | 株式会社東芝 | セキユリテイ・ストレツド検出装置 |
US4548886A (en) | 1982-06-08 | 1985-10-22 | Canon Kabushiki Kaisha | Radiation sensitive organic thin film comprising an azulenium salt |
JPS5950579A (ja) | 1982-09-16 | 1984-03-23 | Komatsu Ltd | 半導体光位置検出器 |
US4593187A (en) | 1982-10-29 | 1986-06-03 | The Perkin-Elmer Corporation | Non-imaging illumination incidence angle detection system |
ZA839316B (en) | 1982-12-16 | 1984-08-29 | Vickers Plc | Photoconductive compositions |
JPS61245579A (ja) | 1984-02-17 | 1986-10-31 | アメリカン サイアナミド カンパニ− | 半導体装置と製法 |
US4584704A (en) | 1984-03-01 | 1986-04-22 | Bran Ferren | Spatial imaging system |
US4773751A (en) | 1984-03-09 | 1988-09-27 | Minolta Camera Kabushiki Kaisha | Infinite level setting device for a distance measuring device |
JPS6189501A (ja) | 1984-10-08 | 1986-05-07 | Hitachi Ltd | 境界面測定装置 |
GB2165641B (en) | 1984-10-13 | 1988-01-13 | Graviner Ltd | Measuring distance to a fire |
US4602158A (en) | 1984-10-26 | 1986-07-22 | Itek Corporation | PbS-PbSe IR detector arrays |
US4603258A (en) | 1984-11-16 | 1986-07-29 | Sri International | Photocapacitive detector array |
JPS61135280A (ja) | 1984-12-06 | 1986-06-23 | Toshiba Corp | 三次元撮像素子 |
DE3582576D1 (de) | 1985-01-03 | 1991-05-23 | Ciba Geigy Ag | Dithioketo-pyrrolo-pyrrole, verfahren zu deren herstellung und verwendung. |
JPS61186804A (ja) | 1985-02-11 | 1986-08-20 | ゼロツクス コーポレーシヨン | 光検出装置 |
US4647193A (en) | 1985-06-10 | 1987-03-03 | Rca Corporation | Optical target ranging apparatus |
US4760004A (en) | 1986-11-10 | 1988-07-26 | Ciba-Geigy Corporation | Thioquinacridones and isothioquinacridones, preparation and use thereof |
US6198100B1 (en) * | 1987-08-05 | 2001-03-06 | Lockheed Martin Corporation | Method for fabricating an infrared radiation detector |
EP0309631B1 (en) | 1987-09-28 | 1994-03-30 | KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. | Method and apparatus for detecting position/variance of input light |
US5082363A (en) | 1988-02-12 | 1992-01-21 | Omron Tateisi Electronics Co. | Optical distance measuring apparatus and method using light projection pulses |
CH674596A5 (ja) | 1988-02-12 | 1990-06-15 | Sulzer Ag | |
US4952472A (en) | 1988-07-01 | 1990-08-28 | Xerox Corporation | Indigoid photoconductor imaging members |
JP2687154B2 (ja) | 1988-12-23 | 1997-12-08 | 株式会社小松製作所 | 三次元位置計測装置 |
JPH0321078A (ja) * | 1989-06-19 | 1991-01-29 | Fujitsu Ltd | 赤外線検知素子 |
JPH04240817A (ja) | 1991-01-25 | 1992-08-28 | Seiko Epson Corp | 光学素子 |
EP0525070B1 (en) | 1990-04-17 | 1995-12-20 | Ecole Polytechnique Federale De Lausanne | Photovoltaic cells |
DE4211875A1 (de) | 1990-10-09 | 1993-10-14 | Zeiss Carl Fa | Optischer Abstandssensor |
US5375008A (en) | 1991-07-17 | 1994-12-20 | Electronic Warfare Associates, Inc. | Systems for distinguishing between friendly ground targets and those of a foe |
JPH0548833A (ja) | 1991-08-07 | 1993-02-26 | Asahi Optical Co Ltd | 色収差補正構造 |
US5227985A (en) | 1991-08-19 | 1993-07-13 | University Of Maryland | Computer vision system for position monitoring in three dimensions using non-coplanar light sources attached to a monitored object |
US5216476A (en) | 1991-10-15 | 1993-06-01 | Synectics Corporation | Photogrammetric laser system |
US5291066A (en) | 1991-11-14 | 1994-03-01 | General Electric Company | Moisture-proof electrical circuit high density interconnect module and method for making same |
US5355241A (en) | 1991-12-09 | 1994-10-11 | Kelley Clifford W | Identification friend or foe discriminator |
AT401829B (de) | 1992-02-25 | 1996-12-27 | Oesterr Nationalbank | Verfahren zur zustands-, qualitäts- bzw. passerkontrolle von optischen sicherheitsmerkmalenauf wertpapieren, insbesondere banknoten, und vorrichtung zur durchführung des verfahrens |
JPH05240640A (ja) | 1992-02-26 | 1993-09-17 | Omron Corp | 光学式距離測定装置 |
JP3223461B2 (ja) * | 1993-01-14 | 2001-10-29 | 能美防災株式会社 | 焦電素子 |
JPH07142761A (ja) | 1993-11-18 | 1995-06-02 | Mitsubishi Electric Corp | 受光素子ならびに受光素子アレイおよび画像検出装置ならびに画像検出方法 |
US5589928A (en) | 1994-09-01 | 1996-12-31 | The Boeing Company | Method and apparatus for measuring distance to a target |
JPH08159714A (ja) | 1994-11-30 | 1996-06-21 | Omron Corp | 位置検出センサ |
JPH08292586A (ja) | 1995-04-21 | 1996-11-05 | Hodogaya Chem Co Ltd | 電子写真用感光体 |
US6363164B1 (en) | 1996-05-13 | 2002-03-26 | Cummins-Allison Corp. | Automated document processing system using full image scanning |
CA2196563A1 (en) | 1995-06-07 | 1996-12-19 | Shree K. Nayar | Apparatus and methods for determining the three-dimensional shape of an object using active illumination and relative blurring in two images due to defocus |
DE19526526A1 (de) | 1995-07-20 | 1997-01-23 | Bayerische Motoren Werke Ag | Vorrichtung zum optischen Abtasten von Meßflächen |
WO1997011386A1 (en) | 1995-09-21 | 1997-03-27 | Omniplanar, Inc. | Method and apparatus for determining position and orientation |
JP3364382B2 (ja) | 1996-07-12 | 2003-01-08 | 株式会社東芝 | 試料面位置測定装置及び測定方法 |
JPH10221064A (ja) | 1997-02-07 | 1998-08-21 | Nippon Soken Inc | 光学式測距装置 |
EP0911758B1 (en) | 1997-07-29 | 2005-11-30 | Nhk Spring Co.Ltd. | Optical identification system using cholesteric liquid crystals |
JP2001516150A (ja) | 1997-08-15 | 2001-09-25 | ユニアックス コーポレイション | 切り換え可能な感光性を有する有機ダイオード |
JPH11230860A (ja) | 1998-02-12 | 1999-08-27 | Fujitsu Ltd | 光学的薄膜計測方法及び装置並びにこの装置に用いられる光学的薄膜計測妨害光除去装置 |
JPH11257917A (ja) | 1998-03-12 | 1999-09-24 | Omron Corp | 反射型光式センサ |
US6191881B1 (en) | 1998-06-22 | 2001-02-20 | Citizen Watch Co., Ltd. | Variable focal length lens panel and fabricating the same |
US6266142B1 (en) | 1998-09-21 | 2001-07-24 | The Texas A&M University System | Noncontact position and orientation measurement system and method |
JP3219387B2 (ja) | 1999-01-08 | 2001-10-15 | ミノルタ株式会社 | 撮像装置および該撮像装置を用いた測距装置 |
US6359211B1 (en) | 1999-06-17 | 2002-03-19 | Chemmotif, Inc. | Spectral sensitization of nanocrystalline solar cells |
US6417836B1 (en) | 1999-08-02 | 2002-07-09 | Lucent Technologies Inc. | Computer input device having six degrees of freedom for controlling movement of a three-dimensional object |
WO2001029576A1 (en) | 1999-10-21 | 2001-04-26 | Psc Scanning, Inc. | Rangefinder using collected spot spread and insert shadowing |
US6785028B1 (en) | 1999-11-24 | 2004-08-31 | Ricoh Company, Ltd. | Optical scanning device having a temperature compensation unit |
CA2397806C (en) | 2000-01-21 | 2009-05-05 | Flex Products, Inc. | Optically variable security devices |
JP4547760B2 (ja) | 2000-02-28 | 2010-09-22 | 株式会社島津製作所 | 放射線検出器および放射線撮像装置 |
US6590224B2 (en) | 2000-03-22 | 2003-07-08 | Fuji Photo Film Co., Ltd. | Image storage medium and method of manufacturing the same |
JP3554929B2 (ja) | 2000-05-09 | 2004-08-18 | 韓国科学技術院 | 多方向反射体を用いたハードディスクドライブスライダーの6自由度運動の測定のためのスイングアーム光学系 |
EP1176646A1 (en) | 2000-07-28 | 2002-01-30 | Ecole Polytechnique Féderale de Lausanne (EPFL) | Solid state heterojunction and solid state sensitized photovoltaic cell |
US6699728B2 (en) | 2000-09-06 | 2004-03-02 | Osram Opto Semiconductors Gmbh | Patterning of electrodes in oled devices |
EP1317874B1 (en) | 2000-09-06 | 2004-05-06 | Osram Opto Semiconductors GmbH | Patterning of electrodes in oled devices |
JP2002100469A (ja) | 2000-09-25 | 2002-04-05 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス表示パネル |
DE10146752B4 (de) | 2000-09-25 | 2006-03-23 | Leuze Electronic Gmbh & Co Kg | Optoelektronische Vorrichtung |
JP4278080B2 (ja) | 2000-09-27 | 2009-06-10 | 富士フイルム株式会社 | 高感度受光素子及びイメージセンサー |
ATE298754T1 (de) | 2001-03-23 | 2005-07-15 | Basf Ag | Tert.-alkylphenoxysubstituierte polycyclische verbindungen |
MX247357B (es) | 2001-06-11 | 2007-07-19 | Univ Princeton | Dispositivos fotovoltaicos organicos. |
DE10130763A1 (de) | 2001-06-26 | 2003-01-02 | Bosch Gmbh Robert | Vorrichtung zur optischen Distanzmessung über einen grossen Messbereich |
DE10134132A1 (de) | 2001-07-13 | 2003-01-30 | Siemens Ag | Vorrichtung und Verfahren zum kontinuierlichen Drucken von organischen Leuchtdioden |
US6656611B2 (en) | 2001-07-20 | 2003-12-02 | Osram Opto Semiconductors Gmbh | Structure-defining material for OLEDs |
EP1412697A1 (en) | 2001-08-01 | 2004-04-28 | National Research Council Of Canada | System and method of light spot position and color detection |
NO316632B1 (no) | 2001-11-16 | 2004-03-15 | Thin Film Electronics Asa | Matriseadresserbart optoelektronisk apparat og elektrodeanordning i samme |
JP2003209665A (ja) | 2002-01-16 | 2003-07-25 | Fuji Photo Film Co Ltd | 画像読取方法および画像記録読取装置 |
US20030147002A1 (en) | 2002-02-06 | 2003-08-07 | Eastman Kodak Company | Method and apparatus for a color sequential scannerless range imaging system |
US20050063451A1 (en) * | 2002-02-28 | 2005-03-24 | Shin-Etsu Handotai Co., Ltd | Temperature measuring system, heating device using it and production method for semiconductor wafer, heat ray insulating translucent member, visible light reflection membner, exposure system-use reflection mirror and exposure system, and semiconductor device produced by using them and vetical heat treating device |
JP2003333757A (ja) | 2002-05-14 | 2003-11-21 | Sony Corp | 電源装置 |
CH695914A5 (de) | 2002-05-17 | 2006-10-13 | Hera Rotterdam Bv | Vorrichtung und Verfahren zur optischen Erfassung von Gegenständen. |
US20050250047A1 (en) | 2002-05-17 | 2005-11-10 | Colin Morton | Light-fast, high-capacity optical storage media |
US20050122308A1 (en) | 2002-05-28 | 2005-06-09 | Matthew Bell | Self-contained interactive video display system |
EP1376205A1 (fr) | 2002-06-21 | 2004-01-02 | Asulab S.A. | Moyens de connexion destinés à établir une liaison électrique entre une cellule, notamment à cristaux liquides, et un circuit d'alimentation ou de commande |
US20040031519A1 (en) | 2002-08-13 | 2004-02-19 | Agfa-Gevaert | Nano-porous metal oxide semiconductor spectrally sensitized with metal oxide chalcogenide nano-particles |
DE10238994A1 (de) | 2002-08-20 | 2004-02-26 | Basf Ag | Rylenfarbstoffe |
US9177387B2 (en) | 2003-02-11 | 2015-11-03 | Sony Computer Entertainment Inc. | Method and apparatus for real time motion capture |
US7435940B2 (en) | 2003-03-12 | 2008-10-14 | Flatfrog Laboratories Ab | System and a method of determining the position of a radiation emitting element |
US6995445B2 (en) | 2003-03-14 | 2006-02-07 | The Trustees Of Princeton University | Thin film organic position sensitive detectors |
EP1464990B8 (de) | 2003-03-31 | 2019-11-13 | RUAG Schweiz AG | Modulierbarer reflektor |
SG115546A1 (en) | 2003-06-23 | 2005-10-28 | Affineon Technologies Pte Ltd | Computer input device tracking six degrees of freedom |
US7132788B2 (en) | 2003-09-09 | 2006-11-07 | Osram Opto Semiconductors Gmbh | Optimal bank shapes for inkjet printing |
JP2005091286A (ja) | 2003-09-19 | 2005-04-07 | Nec Corp | レーザ測距装置 |
CN2658728Y (zh) * | 2003-09-26 | 2004-11-24 | 玉山奈米机电股份有限公司 | 热电堆红外线感测组件的封装结构 |
JP4262566B2 (ja) | 2003-10-16 | 2009-05-13 | 株式会社日立製作所 | 車載用撮像装置及びカメラ |
JP4578797B2 (ja) | 2003-11-10 | 2010-11-10 | パナソニック株式会社 | 撮像装置 |
DE10358967B4 (de) | 2003-12-15 | 2006-11-16 | Universität Kassel | Mikrospiegelarray |
JP2005241340A (ja) | 2004-02-25 | 2005-09-08 | Sharp Corp | マルチ測距装置 |
JP2007530978A (ja) | 2004-03-29 | 2007-11-01 | エヴォリューション ロボティクス インコーポレイテッド | 反射光源を使用する位置推定方法および装置 |
US7419846B2 (en) | 2004-04-13 | 2008-09-02 | The Trustees Of Princeton University | Method of fabricating an optoelectronic device having a bulk heterojunction |
WO2005106965A1 (en) | 2004-05-04 | 2005-11-10 | The University Of Newcastle Research Associates Limited | Multicomponent organic solar cells |
US7773070B2 (en) | 2004-05-21 | 2010-08-10 | Cypress Semiconductor Corporation | Optical positioning device using telecentric imaging |
US7540978B2 (en) | 2004-08-05 | 2009-06-02 | Novaled Ag | Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component |
US20090153841A1 (en) | 2004-08-23 | 2009-06-18 | Wil Ophey | Optical scanning device |
US7180065B2 (en) | 2004-09-30 | 2007-02-20 | Battelle Memorial Institute | Infra-red detector and method of making and using same |
US7626569B2 (en) | 2004-10-25 | 2009-12-01 | Graphics Properties Holdings, Inc. | Movable audio/video communication interface system |
EP1667246A1 (en) | 2004-12-03 | 2006-06-07 | ETeCH AG | A multi-colour sensitive device for colour image sensing |
US7301608B1 (en) | 2005-01-11 | 2007-11-27 | Itt Manufacturing Enterprises, Inc. | Photon-counting, non-imaging, direct-detect LADAR |
US8228299B1 (en) | 2005-01-27 | 2012-07-24 | Singleton Technology, Llc | Transaction automation and archival system using electronic contract and disclosure units |
EP1703300A1 (de) | 2005-03-17 | 2006-09-20 | Leica Geosystems AG | Verfahren und System zur Bestimmung von Position und Orientierung eines Objekts |
US7196317B1 (en) | 2005-03-25 | 2007-03-27 | Virginia Tech Intellectual Properties, Inc. | System, device, and method for detecting perturbations |
GB0512743D0 (en) | 2005-06-17 | 2005-10-26 | Mbda Uk Ltd | Range detection |
DE102005032583A1 (de) | 2005-07-11 | 2007-01-25 | Basf Ag | Substituierte Rylenderivate |
JP4977339B2 (ja) | 2005-07-11 | 2012-07-18 | 株式会社トプコン | 地理データ収集装置 |
US7933001B2 (en) | 2005-07-11 | 2011-04-26 | Kabushiki Kaisha Topcon | Geographic data collecting system |
US7911444B2 (en) | 2005-08-31 | 2011-03-22 | Microsoft Corporation | Input method for surface of interactive display |
DE102005043627B4 (de) | 2005-09-13 | 2012-06-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optischer Sensor und Verfahren zur optischen Abstands- und/oder Farbmessung |
US20070080925A1 (en) | 2005-10-11 | 2007-04-12 | Nokia Corporation | Power generating display device |
DE102005053995A1 (de) | 2005-11-10 | 2007-05-24 | Basf Ag | Verwendung von Rylenderivaten als Photosensibilisatoren in Solarzellen |
WO2007054884A2 (en) | 2005-11-11 | 2007-05-18 | Koninklijke Philips Electronics N.V. | System and method for positioning an information carrier in a scanning apparatus |
US7489408B2 (en) | 2005-11-15 | 2009-02-10 | General Electric Company | Optical edge break gage |
GB2432723B (en) | 2005-11-25 | 2010-12-08 | Seiko Epson Corp | Electrochemical cell and method of manufacture |
JP5010244B2 (ja) * | 2005-12-15 | 2012-08-29 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
KR101625224B1 (ko) | 2006-02-09 | 2016-05-27 | 큐디 비젼, 인크. | 반도체 나노결정 및 도핑된 유기 물질을 포함하는 층을 포함하는 소자 및 방법 |
US7672527B2 (en) | 2006-03-06 | 2010-03-02 | Northrop Grumman Corporation | Method and apparatus for chromatic correction of Fresnel lenses |
US7839547B2 (en) | 2006-03-08 | 2010-11-23 | Kabushiki Kaisha Toshiba | Optical fiber illumination device and inspection apparatus |
EP3264542B1 (en) * | 2006-03-10 | 2019-06-05 | Nichia Corporation | Light-emitting device |
DE102006013292A1 (de) | 2006-03-23 | 2007-09-27 | Robert Bosch Gmbh | Vorrichtung zur optischen Distanzmessung |
DE102006013290A1 (de) | 2006-03-23 | 2007-09-27 | Robert Bosch Gmbh | Vorrichtung zur optischen Distanzmessung sowie Verfahren zum Betrieb einer solchen Vorrichtung |
EP1860462A1 (de) | 2006-05-23 | 2007-11-28 | Leica Geosystems AG | Distanzmessverfahren und Distanzmesser zur Erfassung der räumlichen Abmessung eines Zieles |
US8144271B2 (en) | 2006-08-03 | 2012-03-27 | Perceptive Pixel Inc. | Multi-touch sensing through frustrated total internal reflection |
KR100917583B1 (ko) | 2006-08-10 | 2009-09-15 | 주식회사 엘지화학 | 비접촉식 좌표입력 시스템용 도광판, 이를 포함하는 시스템및 이를 이용한 비접촉식 좌표입력 방법 |
US8781151B2 (en) | 2006-09-28 | 2014-07-15 | Sony Computer Entertainment Inc. | Object detection using video input combined with tilt angle information |
CN101154291B (zh) | 2006-09-29 | 2010-05-12 | 国际商业机器公司 | 图像数据压缩方法、图像显示方法及其相应装置 |
US20080170750A1 (en) | 2006-11-01 | 2008-07-17 | Demian Gordon | Segment tracking in motion picture |
US7511615B2 (en) | 2007-01-01 | 2009-03-31 | Intelguard Ltd. | Self-operated perimeter intrusion detection system |
US20080297487A1 (en) | 2007-01-03 | 2008-12-04 | Apple Inc. | Display integrated photodiode matrix |
DE102007003024A1 (de) | 2007-01-20 | 2008-07-31 | Sick Ag | Triangulationssensor mit Entfernungsbestimmung aus Lichtfleckposition und -form |
US20100113767A1 (en) | 2007-04-05 | 2010-05-06 | Basf Se | Preparation of silicon phthalocyanines and germanium phthalocyanines and related substances |
JP2008267898A (ja) | 2007-04-18 | 2008-11-06 | Sharp Corp | 光位置検出装置および電子機器 |
WO2008145172A1 (en) | 2007-05-25 | 2008-12-04 | Universidad Autónoma de Madrid | Tri-tert-butylcarboxyphthalocyanines, uses thereof and a process for their preparation |
US7939932B2 (en) | 2007-06-20 | 2011-05-10 | Analog Devices, Inc. | Packaged chip devices with atomic layer deposition protective films |
WO2009013282A1 (de) | 2007-07-23 | 2009-01-29 | Basf Se | Photovoltaische tandem-zelle |
DE102007037875A1 (de) | 2007-08-10 | 2009-02-12 | Osram Gesellschaft mit beschränkter Haftung | Strahlungsemittierende Vorrichtung |
JP2009097872A (ja) | 2007-10-12 | 2009-05-07 | Sharp Corp | 光学式測距センサ、物体検出装置、洗浄便座、および光学式測距センサの製造方法 |
JP5460603B2 (ja) | 2007-10-25 | 2014-04-02 | ビーエーエスエフ ソシエタス・ヨーロピア | 有機半導体としてのケトピロール類 |
EP2220141A1 (en) | 2007-10-29 | 2010-08-25 | Rieke Metals, Inc. | Process for preparation of conducting polymers |
JP2009182095A (ja) | 2008-01-30 | 2009-08-13 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
AT506617B1 (de) | 2008-02-27 | 2011-03-15 | Isiqiri Interface Tech Gmbh | Anzeigefläche und damit kombinierte steuervorrichtung |
WO2009111577A1 (en) | 2008-03-04 | 2009-09-11 | California Institute Of Technology | Methods of using optofluidic microscope devices |
US20110284756A1 (en) | 2008-07-21 | 2011-11-24 | United States of America as repersented by the Administrator of the National Aeronautics and Spac | Detector for dual band ultraviolet detection |
JP5178393B2 (ja) | 2008-08-20 | 2013-04-10 | シャープ株式会社 | 光学式測距センサおよび電子機器 |
US8107056B1 (en) | 2008-09-17 | 2012-01-31 | University Of Central Florida Research Foundation, Inc. | Hybrid optical distance sensor |
JP2010081002A (ja) | 2008-09-24 | 2010-04-08 | Sanyo Electric Co Ltd | 撮像装置 |
KR101484111B1 (ko) | 2008-09-25 | 2015-01-19 | 삼성전자주식회사 | 입체 이미지 센서 |
US8217261B2 (en) | 2008-09-30 | 2012-07-10 | Stion Corporation | Thin film sodium species barrier method and structure for cigs based thin film photovoltaic cell |
JP5469843B2 (ja) | 2008-10-09 | 2014-04-16 | 株式会社トプコン | レーザ測量装置及び距離測定方法 |
US9746544B2 (en) | 2008-12-03 | 2017-08-29 | Analog Devices, Inc. | Position measurement systems using position sensitive detectors |
DE102008061218B3 (de) | 2008-12-09 | 2010-06-24 | Sick Ag | Optoelektronische Sensoreinrichtung |
JP4818351B2 (ja) | 2008-12-25 | 2011-11-16 | 株式会社東芝 | 画像処理装置及び画像表示装置 |
US8267781B2 (en) | 2009-01-30 | 2012-09-18 | Microsoft Corporation | Visual target tracking |
JP4846811B2 (ja) | 2009-02-03 | 2011-12-28 | シャープ株式会社 | 光スポット位置検出装置およびそれを含む光デバイス、並びに、その光デバイスを含む電子機器 |
AU2010215568B2 (en) | 2009-02-23 | 2016-04-21 | Basf Se | Use of triarylamine derivatives as hole-conducting materials in organic solar cells and organic solar cells containing said triarylamine derivatives |
US8389060B2 (en) | 2009-03-04 | 2013-03-05 | Xerox Corporation | Process for preparing structured organic films (SOFs) via a pre-SOF |
JP5406570B2 (ja) | 2009-03-13 | 2014-02-05 | アイシン精機株式会社 | 色素増感型太陽電池及びその製造方法 |
US8399819B2 (en) | 2009-03-31 | 2013-03-19 | Osram Sylvania Inc. | Current source to drive a light source in an optical sensor system |
CA2758301A1 (en) | 2009-04-10 | 2010-10-14 | Ls9, Inc. | Production of fatty acid derivatives |
AT508438B1 (de) | 2009-04-16 | 2013-10-15 | Isiqiri Interface Tech Gmbh | Anzeigefläche und eine damit kombinierte steuervorrichtung für eine datenverarbeitungsanlage |
US9071834B2 (en) | 2009-04-25 | 2015-06-30 | James Yett | Array of individually angled mirrors reflecting disparate color sources toward one or more viewing positions to construct images and visual effects |
US20100279458A1 (en) | 2009-04-29 | 2010-11-04 | Du Pont Apollo Ltd. | Process for making partially transparent photovoltaic modules |
JP2011027707A (ja) | 2009-06-25 | 2011-02-10 | Sharp Corp | 人物動作検出装置、遊具装置、人物動作検出方法、ゲーム方法、制御プログラムおよび可読記録媒体 |
US8779361B2 (en) * | 2009-06-30 | 2014-07-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Optical proximity sensor package with molded infrared light rejection barrier and infrared pass components |
US9141193B2 (en) | 2009-08-31 | 2015-09-22 | Microsoft Technology Licensing, Llc | Techniques for using human gestures to control gesture unaware programs |
CN101650173A (zh) | 2009-09-11 | 2010-02-17 | 武汉理工大学 | 太阳位置光电传感器 |
DE102009029372A1 (de) | 2009-09-11 | 2011-03-24 | Robert Bosch Gmbh | Messvorrichtung zur Messung einer Entfernung zwischen der Messvorrichtung und einem Zielobjekt mit Hilfe optischer Messstrahlung |
JP2011096329A (ja) | 2009-10-30 | 2011-05-12 | Sanyo Electric Co Ltd | 光ピックアップ装置 |
US8287195B2 (en) | 2009-11-10 | 2012-10-16 | Dezeeuw Paul | Motor controlled macro rail for close-up focus-stacking photography |
JP5549204B2 (ja) | 2009-12-01 | 2014-07-16 | セイコーエプソン株式会社 | 光学式位置検出装置、ハンド装置およびタッチパネル |
JP5774599B2 (ja) | 2009-12-02 | 2015-09-09 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | ジチエノベンゾ−チエノ[3,2−b]チオフェン−コポリマーとその溶液加工可能な高機能性半導電性ポリマーとしての利用 |
US8491135B2 (en) | 2010-01-04 | 2013-07-23 | Microvision, Inc. | Interactive projection with gesture recognition |
JP5685898B2 (ja) | 2010-01-08 | 2015-03-18 | ソニー株式会社 | 半導体装置、固体撮像装置、およびカメラシステム |
DE102010006314A1 (de) | 2010-01-29 | 2011-08-04 | EWE-Forschungszentrum für Energietechnologie e. V., 26129 | Photovoltaische Mehrfach-Dünnschichtsolarzelle |
JP5079826B2 (ja) | 2010-02-09 | 2012-11-21 | シャープ株式会社 | 光学式測距センサおよび電子機器 |
KR101251020B1 (ko) | 2010-03-09 | 2013-04-03 | 국립대학법인 울산과학기술대학교 산학협력단 | 그라펜의 제조 방법, 이를 포함하는 투명 전극, 활성층, 이를 구비한 표시소자, 전자소자, 광전소자, 태양전지 및 염료감응 태양전지 |
JP5343896B2 (ja) | 2010-03-10 | 2013-11-13 | セイコーエプソン株式会社 | 光学式位置検出装置 |
US20100283868A1 (en) | 2010-03-27 | 2010-11-11 | Lloyd Douglas Clark | Apparatus and Method for Application of Selective Digital Photomontage to Motion Pictures |
CN101859439A (zh) | 2010-05-12 | 2010-10-13 | 合肥寰景信息技术有限公司 | 一种用于人机交互的运动追踪装置及其追踪方法 |
KR101665567B1 (ko) | 2010-05-20 | 2016-10-12 | 삼성전자주식회사 | 3차원 뎁스 영상 시간 보간 방법 및 장치 |
GB2481366B (en) | 2010-06-03 | 2014-05-28 | Sony Comp Entertainment Europe | Entertainment device and entertainment methods |
AU2011273006B2 (en) | 2010-06-29 | 2016-05-26 | Basf Se | Photoelectric conversion device comprising hydroxamic acid derivative or salt thereof as additive and process for producing same |
TWI431252B (zh) | 2010-07-14 | 2014-03-21 | Pixart Imaging Inc | 測距裝置及測距方法 |
CN102985788B (zh) | 2010-07-23 | 2015-02-11 | 丰田自动车株式会社 | 距离测定装置以及距离测定方法 |
US8743348B2 (en) | 2010-09-03 | 2014-06-03 | Pixart Imaging Inc. | Optical distance detection system |
US8536545B2 (en) | 2010-09-09 | 2013-09-17 | California Institute Of Technology | Delayed emission detection devices and methods |
TW201211860A (en) | 2010-09-13 | 2012-03-16 | Pixart Imaging Inc | Optical touch control apparatus and touch sensing method thereof |
JP5541023B2 (ja) | 2010-09-13 | 2014-07-09 | ソニー株式会社 | 対物レンズ、光学ピックアップ、光学ドライブ装置 |
IL208568B (en) | 2010-10-07 | 2018-06-28 | Elbit Systems Ltd | Mapping, discovering and tracking objects in an external arena by using active vision |
DE102010042278A1 (de) | 2010-10-11 | 2012-04-12 | Siemens Aktiengesellschaft | Operationsnavigationssystem mit strukturiertem Licht |
CN201897828U (zh) | 2010-11-30 | 2011-07-13 | 深圳市中钞信达金融科技有限公司 | 一种票币光谱检测和安全线检测的集成装置 |
CN103261191B (zh) | 2010-12-22 | 2016-06-29 | 巴斯夫欧洲公司 | 萘单酰亚胺衍生物及其在太阳能电池和光电检测器中作为光敏剂的用途 |
CN102096962A (zh) | 2010-12-23 | 2011-06-15 | 北京新岸线软件科技有限公司 | 一种纸币检测方法及装置 |
JP5550624B2 (ja) | 2010-12-24 | 2014-07-16 | 三菱電機株式会社 | 光電変換装置とその製造方法、および光電変換モジュール |
US8705805B2 (en) | 2011-01-10 | 2014-04-22 | Peter Alexander Forrest | Secure portable token and systems and methods for identification and authentication of the same |
CN103492835B (zh) | 2011-02-15 | 2016-08-17 | 巴斯夫欧洲公司 | 用于光学检测至少一种物体的检测器 |
US9001029B2 (en) | 2011-02-15 | 2015-04-07 | Basf Se | Detector for optically detecting at least one object |
SG10201600432YA (en) | 2011-02-21 | 2016-02-26 | Univ Singapore | Apparatus, system, and method for annotation of media files with sensor data |
US9182602B2 (en) | 2011-03-07 | 2015-11-10 | Panasonic Intellectual Property Management Co., Ltd. | Image pickup device and rangefinder device |
US8593565B2 (en) | 2011-03-25 | 2013-11-26 | Gary S. Shuster | Simulated large aperture lens |
US8384984B2 (en) | 2011-03-28 | 2013-02-26 | Lighting Science Group Corporation | MEMS wavelength converting lighting device and associated methods |
CN102737435A (zh) | 2011-04-11 | 2012-10-17 | 北京新岸线数字图像技术有限公司 | 一种纸币鉴伪方法和装置 |
US8791901B2 (en) | 2011-04-12 | 2014-07-29 | Sony Computer Entertainment, Inc. | Object tracking with projected reference patterns |
JP5445509B2 (ja) | 2011-04-26 | 2014-03-19 | パナソニック株式会社 | 画像形成装置および画像形成方法ならびに部品実装装置 |
JP6066121B2 (ja) | 2011-05-10 | 2017-01-25 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 新規の色変換体 |
DE102011076493A1 (de) | 2011-05-26 | 2012-11-29 | Hilti Aktiengesellschaft | Messeinrichtung zur Distanzmessung |
US9406848B2 (en) | 2011-06-10 | 2016-08-02 | Basf Se | Color converter |
EP2535681B1 (en) | 2011-06-17 | 2016-01-06 | Thomson Licensing | Device for estimating the depth of elements of a 3D scene |
US9419161B2 (en) | 2011-06-24 | 2016-08-16 | Boly Media Communications (Shenzhen) Co., Ltd. | Hybrid multi-spectrum photosensitive pixel group, photosensitive device, and photosensitive system |
CN102353459B (zh) * | 2011-07-05 | 2016-01-27 | 上海集成电路研发中心有限公司 | 探测器及其制造方法 |
WO2013009676A1 (en) | 2011-07-13 | 2013-01-17 | Faro Technologies, Inc. | Device and method using a spatial light modulator to find 3d coordinates of an object |
WO2013015460A1 (ko) | 2011-07-22 | 2013-01-31 | 국립대학법인 울산과학기술대학교 산학협력단 | 그라펜 시트, 이를 포함하는 투명 전극, 활성층, 이를 구비한 표시소자, 전자소자, 광전소자, 배터리, 태양전지 및 염료감응 태양전지 |
JP5791571B2 (ja) | 2011-08-02 | 2015-10-07 | キヤノン株式会社 | 撮像素子及び撮像装置 |
JP6296980B2 (ja) | 2011-09-02 | 2018-03-20 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | ジケトピロロピロールオリゴマー、及びジケトピロロピロールオリゴマーを含む組成物 |
CN102435136A (zh) | 2011-09-20 | 2012-05-02 | 浙江师范大学 | 空间相移装置及应用该装置的干涉测量装置、相位校正装置 |
FR2980599B1 (fr) | 2011-09-27 | 2014-05-09 | Isorg | Surface imprimee interactive |
CN102506754B (zh) | 2011-11-09 | 2013-11-06 | 西安工业大学 | 物体表面形貌与颜色同时测量的共聚焦测量装置及其使用方法 |
WO2013080552A1 (ja) | 2011-11-30 | 2013-06-06 | パナソニック株式会社 | 撮像装置及び撮像システム |
AT512350B1 (de) | 2011-12-20 | 2017-06-15 | Isiqiri Interface Tech Gmbh | Computeranlage und steuerungsverfahren dafür |
AU2011265572A1 (en) | 2011-12-23 | 2013-07-11 | Canon Kabushiki Kaisha | Structured light system for robust geometry acquisition |
AT512461B1 (de) | 2012-02-10 | 2018-02-15 | Isiqiri Interface Tech Gmbh | Vorrichtung für die eingabe von informationen an eine datenverarbeitungsanlage |
WO2013118037A1 (en) | 2012-02-10 | 2013-08-15 | Koninklijke Philips N.V. | A lighting assembly, a color conversion element, a lamp and a luminaire |
US9041140B2 (en) * | 2012-03-15 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grids in backside illumination image sensor chips and methods for forming the same |
US8804101B2 (en) | 2012-03-16 | 2014-08-12 | Advanced Scientific Concepts, Inc. | Personal LADAR sensor |
DE102012204572A1 (de) | 2012-03-22 | 2013-09-26 | Dr. Johannes Heidenhain Gmbh | Positionsmesseinrichtung und Anordnung mit einer derartigen Positionsmesseinrichtung |
KR20140145180A (ko) | 2012-03-30 | 2014-12-22 | 바스프 에스이 | 염료 감응 태양 전지용 플루오린화 반대 음이온을 갖는 퀴놀리늄 염료 |
JP6419065B2 (ja) | 2012-04-02 | 2018-11-07 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 電子工学用途のためのフェナントロ[9,10−b]フランポリマーおよび小分子化合物 |
CN104169970B (zh) | 2012-04-18 | 2018-01-05 | 索尼公司 | 用于确定图像的景深图的方法和光学系统 |
DE102012208308A1 (de) | 2012-05-18 | 2013-11-21 | Robert Bosch Gmbh | Optisches Entfernungsmessgerät mit Kalibriereinrichtung zum Berücksichtigen von Übersprechen |
WO2013181215A1 (en) | 2012-05-30 | 2013-12-05 | Massachusetts Institute Of Technology | Devices comprising graphene and a conductive polymer and related systems and methods |
JP6207606B2 (ja) | 2012-07-23 | 2017-10-04 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | ジチエノベンゾフランポリマーおよび電子的な応用のための小分子 |
WO2014030566A1 (ja) * | 2012-08-23 | 2014-02-27 | 株式会社村田製作所 | レセプタクル及び光伝送モジュール |
US20140066656A1 (en) | 2012-09-04 | 2014-03-06 | Basf Se | Spiro compounds and their use in organic electronics applications and devices |
US9252182B2 (en) * | 2012-09-05 | 2016-02-02 | Northrop Grumman Systems Corporation | Infrared multiplier for photo-conducting sensors |
DE202012009070U1 (de) | 2012-09-21 | 2012-11-12 | Balluff Gmbh | Optoelektronischer Sensor und Empfangselement |
US9212948B2 (en) | 2012-11-07 | 2015-12-15 | The Trustees Of Columbia University In The City Of New York | Lossless hyperspectral imaging |
KR101984701B1 (ko) | 2012-11-13 | 2019-05-31 | 삼성전자주식회사 | 전기습윤 렌즈 어레이를 포함하는 3차원 영상 디스플레이 장치 및 3차원 영상 획득 장치 |
CN104797624B (zh) | 2012-12-04 | 2018-08-10 | 巴斯夫欧洲公司 | 用于电子应用的官能化苯并二噻吩聚合物 |
TWI456430B (zh) | 2012-12-07 | 2014-10-11 | Pixart Imaging Inc | 手勢判斷裝置、其操作方法與手勢判斷方法 |
CN103106411A (zh) | 2012-12-13 | 2013-05-15 | 徐玉文 | 一种网球动作捕捉和解析方法 |
TWI599757B (zh) | 2012-12-19 | 2017-09-21 | 巴斯夫歐洲公司 | 用於偵測至少一物件之偵測器、其用途、用於偵測至少一物件之方法、人機介面、娛樂器件、追蹤系統及攝影機 |
WO2014097489A1 (ja) | 2012-12-21 | 2014-06-26 | グローリー株式会社 | スペクトルセンサ |
WO2014111365A1 (en) | 2013-01-15 | 2014-07-24 | Basf Se | Triangulene oligomers and polymers and their use as hole conducting material |
WO2014178923A2 (en) | 2013-01-25 | 2014-11-06 | University Of Florida Research Foundation, Inc. | A novel ir image sensor using a solution processed pbs photodetector |
US20150369663A1 (en) | 2013-02-06 | 2015-12-24 | Empire Technology Development Llc. | Thermo-optic tunable spectrometer |
US20140347442A1 (en) | 2013-05-23 | 2014-11-27 | Yibing M. WANG | Rgbz pixel arrays, imaging devices, controllers & methods |
EP2976316A4 (en) | 2013-03-18 | 2016-11-16 | Basf Se | PERYLENEMONOIMIDE AND NAPHTHALENEMONOIMIDE DERIVATIVES AND THEIR USE IN DYE SENSITIZED PHOTOPILES |
US9459154B2 (en) * | 2013-05-15 | 2016-10-04 | Raytheon Company | Multi-layer advanced carbon nanotube blackbody for compact, lightweight, and on-demand infrared calibration |
EP2813324B1 (en) | 2013-06-13 | 2016-04-06 | Stanley Works (Europe) GmbH | Hand tool having an electronic identification device |
DE102014108353A1 (de) | 2013-06-13 | 2014-12-18 | Werth Messtechnik Gmbh | Verfahren und Vorrichtung zur Bestimmung von Geometrien an Messobjekten mittels eines kombinierten Sensorsystems |
JP6440696B2 (ja) | 2013-06-13 | 2018-12-19 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 少なくとも1つの物体の方位を光学的に検出する検出器 |
US9143674B2 (en) | 2013-06-13 | 2015-09-22 | Mitutoyo Corporation | Machine vision inspection system and method for performing high-speed focus height measurement operations |
CN109521397B (zh) | 2013-06-13 | 2023-03-28 | 巴斯夫欧洲公司 | 用于光学地检测至少一个对象的检测器 |
KR102252336B1 (ko) | 2013-06-13 | 2021-05-14 | 바스프 에스이 | 광학 검출기 및 그의 제조 방법 |
EP2818493A1 (en) | 2013-06-25 | 2014-12-31 | Basf Se | Near infrared absorbing polymers for electronic applications |
US20160155575A1 (en) | 2013-07-25 | 2016-06-02 | Basf Se | Methine dyes with large organic counter anion for dye sensitized solar cells |
JP6548648B2 (ja) | 2013-08-05 | 2019-07-24 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | シアノ化されたナフタレンベンゾイミダゾール化合物 |
KR20160044009A (ko) | 2013-08-19 | 2016-04-22 | 바스프 에스이 | 하나 이상의 물체의 위치를 결정하기 위한 검출기 |
AU2014310703B2 (en) | 2013-08-19 | 2018-09-27 | Basf Se | Optical detector |
CN105705610B (zh) | 2013-08-23 | 2018-01-30 | 巴斯夫欧洲公司 | 具有端杂芳基氰基亚乙烯基的化合物及其在有机太阳能电池中的应用 |
CN105659405B (zh) | 2013-08-23 | 2019-05-07 | 巴斯夫欧洲公司 | 用于有机异质结太阳能电池的新型吸收剂 |
WO2015032748A1 (en) | 2013-09-03 | 2015-03-12 | Basf Se | Amorphous material and the use thereof |
AT515132A1 (de) | 2013-12-04 | 2015-06-15 | Isiqiri Interface Tech Gmbh | Optische Eingabefläche |
JP6315964B2 (ja) | 2013-12-10 | 2018-04-25 | オプテックス株式会社 | 能動型物体検出センサ |
CN105980812A (zh) | 2013-12-18 | 2016-09-28 | 巴斯夫欧洲公司 | 用于光学检测对象的目标装置 |
WO2015159192A1 (en) | 2014-04-15 | 2015-10-22 | Basf Se | Process for the production of a solid dye-sensitized solar cell or a perovskite solar cell |
US20170039793A1 (en) | 2014-04-17 | 2017-02-09 | Basf Se | Verification device, verification system and method for verifying the identity of an article |
US20170074652A1 (en) | 2014-04-22 | 2017-03-16 | Basf Se | Detector for optically detecting at least one object |
EP2937399A1 (en) | 2014-04-22 | 2015-10-28 | Basf Se | Hole-transport materials for organic solar cells or organic optical sensors |
EP3140268B1 (de) | 2014-05-09 | 2018-07-18 | Basf Se | Cyanierte perylen-verbindungen |
US10054429B2 (en) | 2014-05-18 | 2018-08-21 | Adom, Advanced Optical Technologies Ltd. | System for tomography and/or topography measurements of a layered objects |
US9864470B2 (en) | 2014-05-30 | 2018-01-09 | Flatfrog Laboratories Ab | Enhanced interaction touch system |
KR20170018837A (ko) | 2014-06-16 | 2017-02-20 | 바스프 에스이 | 적어도 하나의 물체의 위치를 결정하기 위한 검출기 |
US11041718B2 (en) | 2014-07-08 | 2021-06-22 | Basf Se | Detector for determining a position of at least one object |
US20170250334A1 (en) | 2014-09-18 | 2017-08-31 | Basf Se | Thermo-compression bonding of thermoelectric materials |
WO2016051323A1 (en) | 2014-09-29 | 2016-04-07 | Basf Se | Detector for optically determining a position of at least one object |
CN105678123B (zh) | 2014-11-18 | 2019-03-08 | 联发科技(新加坡)私人有限公司 | 一种设备解锁方法及装置 |
EP3224246B1 (en) | 2014-11-26 | 2022-01-12 | Basf Se | 4-oxoquinoline compounds |
JP2018507389A (ja) | 2014-12-09 | 2018-03-15 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 光学検出器 |
WO2016092449A1 (en) | 2014-12-09 | 2016-06-16 | Basf Se | Optical detector |
WO2016092450A1 (en) | 2014-12-09 | 2016-06-16 | Basf Se | Detector for an optical detection of at least one object |
US11125880B2 (en) | 2014-12-09 | 2021-09-21 | Basf Se | Optical detector |
CN107003120A (zh) | 2014-12-09 | 2017-08-01 | 巴斯夫欧洲公司 | 光学检测器 |
KR20170122206A (ko) | 2015-03-05 | 2017-11-03 | 바스프 에스이 | 적어도 하나의 물체의 광 검출용 검출기 |
WO2016146725A1 (en) | 2015-03-17 | 2016-09-22 | Basf Se | Optical data reader |
JP2018513566A (ja) | 2015-04-22 | 2018-05-24 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 少なくとも1つの対象物の光学的検出のための検出器 |
KR102644439B1 (ko) | 2015-07-17 | 2024-03-07 | 트리나미엑스 게엠베하 | 하나 이상의 물체를 광학적으로 검출하기 위한 검출기 |
EP3335240A1 (en) | 2015-08-10 | 2018-06-20 | trinamiX GmbH | Organic detector for an optical detection of at least one object |
CN108141579B (zh) | 2015-09-14 | 2020-06-12 | 特里纳米克斯股份有限公司 | 3d相机 |
EP3380911A1 (en) | 2015-11-25 | 2018-10-03 | trinamiX GmbH | Detector for optically detecting at least one object |
EP3384315A1 (en) | 2015-12-03 | 2018-10-10 | trinamiX GmbH | Detector for optically detecting at least one object |
EP3440707A1 (en) | 2016-04-06 | 2019-02-13 | trinamiX GmbH | Detector for optically detecting at least one object |
US20190140129A1 (en) | 2016-04-06 | 2019-05-09 | Trinamix Gmbh | Detector for an optical detection of at least one object |
KR20180136952A (ko) | 2016-04-19 | 2018-12-26 | 트리나미엑스 게엠베하 | 적어도 하나의 물체를 광학적으로 검출하기 위한 검출기 |
CN109416402A (zh) | 2016-04-28 | 2019-03-01 | 特里纳米克斯股份有限公司 | 用于光学检测至少一个对象的检测器 |
JP2019523562A (ja) | 2016-07-29 | 2019-08-22 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光学的検出のための光センサおよび検出器 |
EP3491418A1 (en) | 2016-07-29 | 2019-06-05 | trinamiX GmbH | Detector for an optical detection of at least one object |
CN109923372B (zh) | 2016-10-25 | 2021-12-21 | 特里纳米克斯股份有限公司 | 采用集成滤波器的红外光学检测器 |
-
2018
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- 2018-04-19 JP JP2019556599A patent/JP7204667B2/ja active Active
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- 2018-04-19 CN CN201880041079.9A patent/CN110770555A/zh active Pending
- 2018-04-19 KR KR1020197030836A patent/KR102623150B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004179218A (ja) | 2002-11-25 | 2004-06-24 | Matsushita Electric Works Ltd | 光起電力装置およびそれを用いた半導体リレー |
JP2006186288A (ja) | 2004-09-14 | 2006-07-13 | Sony Chem Corp | 機能素子実装モジュール及びその製造方法 |
JP2008053546A (ja) | 2006-08-25 | 2008-03-06 | Tdk Corp | 受光素子 |
US20120146028A1 (en) | 2009-08-20 | 2012-06-14 | Sharp Kabushiki Kaisha | Photosensor, semiconductor device, and liquid crystal panel |
US20140124782A1 (en) | 2012-11-06 | 2014-05-08 | Samsung Electronics Co., Ltd. | Image sensor |
WO2016120392A1 (en) | 2015-01-30 | 2016-08-04 | Trinamix Gmbh | Detector for an optical detection of at least one object |
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