SG119361A1 - Composition for removing photoresist and/or etching residue from a substrate and use thereof - Google Patents
Composition for removing photoresist and/or etching residue from a substrate and use thereofInfo
- Publication number
- SG119361A1 SG119361A1 SG200504839A SG200504839A SG119361A1 SG 119361 A1 SG119361 A1 SG 119361A1 SG 200504839 A SG200504839 A SG 200504839A SG 200504839 A SG200504839 A SG 200504839A SG 119361 A1 SG119361 A1 SG 119361A1
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- composition
- etching residue
- removing photoresist
- photoresist
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/896,589 US9217929B2 (en) | 2004-07-22 | 2004-07-22 | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
SG119361A1 true SG119361A1 (en) | 2006-02-28 |
Family
ID=34937875
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200504839A SG119361A1 (en) | 2004-07-22 | 2005-07-19 | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
SG200716920-4A SG136954A1 (en) | 2004-07-22 | 2005-07-19 | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200716920-4A SG136954A1 (en) | 2004-07-22 | 2005-07-19 | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
Country Status (8)
Country | Link |
---|---|
US (2) | US9217929B2 (ko) |
EP (1) | EP1619557B1 (ko) |
JP (1) | JP4819429B2 (ko) |
KR (1) | KR100786606B1 (ko) |
CN (2) | CN1724626B (ko) |
IL (1) | IL169681A0 (ko) |
SG (2) | SG119361A1 (ko) |
TW (1) | TWI282043B (ko) |
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-
2004
- 2004-07-22 US US10/896,589 patent/US9217929B2/en not_active Expired - Fee Related
-
2005
- 2005-07-14 IL IL169681A patent/IL169681A0/en unknown
- 2005-07-18 KR KR1020050064750A patent/KR100786606B1/ko active IP Right Grant
- 2005-07-19 SG SG200504839A patent/SG119361A1/en unknown
- 2005-07-19 SG SG200716920-4A patent/SG136954A1/en unknown
- 2005-07-19 EP EP05015627.2A patent/EP1619557B1/en not_active Not-in-force
- 2005-07-20 TW TW094124607A patent/TWI282043B/zh active
- 2005-07-22 JP JP2005212358A patent/JP4819429B2/ja not_active Expired - Fee Related
- 2005-07-22 CN CN2005100875451A patent/CN1724626B/zh not_active Expired - Fee Related
- 2005-07-22 CN CN2010101139780A patent/CN101794088B/zh not_active Expired - Fee Related
-
2012
- 2012-07-31 US US13/562,993 patent/US20120295828A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN1724626A (zh) | 2006-01-25 |
KR100786606B1 (ko) | 2007-12-21 |
US20120295828A1 (en) | 2012-11-22 |
SG136954A1 (en) | 2007-11-29 |
US9217929B2 (en) | 2015-12-22 |
KR20060053853A (ko) | 2006-05-22 |
IL169681A0 (en) | 2007-07-04 |
JP4819429B2 (ja) | 2011-11-24 |
JP2006096984A (ja) | 2006-04-13 |
EP1619557B1 (en) | 2015-03-25 |
US20060016785A1 (en) | 2006-01-26 |
CN101794088A (zh) | 2010-08-04 |
CN101794088B (zh) | 2013-04-24 |
CN1724626B (zh) | 2010-10-27 |
TW200604762A (en) | 2006-02-01 |
EP1619557A1 (en) | 2006-01-25 |
TWI282043B (en) | 2007-06-01 |
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