SG11202010537VA - Mask blank, phase shift mask, and method of manufacturing semiconductor device - Google Patents
Mask blank, phase shift mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11202010537VA SG11202010537VA SG11202010537VA SG11202010537VA SG11202010537VA SG 11202010537V A SG11202010537V A SG 11202010537VA SG 11202010537V A SG11202010537V A SG 11202010537VA SG 11202010537V A SG11202010537V A SG 11202010537VA SG 11202010537V A SG11202010537V A SG 11202010537VA
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- semiconductor device
- phase shift
- manufacturing semiconductor
- mask blank
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018103475A JP6938428B2 (ja) | 2018-05-30 | 2018-05-30 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
PCT/JP2019/018386 WO2019230312A1 (ja) | 2018-05-30 | 2019-05-08 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202010537VA true SG11202010537VA (en) | 2020-11-27 |
Family
ID=68697965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202010537VA SG11202010537VA (en) | 2018-05-30 | 2019-05-08 | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US20210132488A1 (ja) |
JP (1) | JP6938428B2 (ja) |
KR (1) | KR20210014100A (ja) |
CN (1) | CN112166376A (ja) |
SG (1) | SG11202010537VA (ja) |
TW (1) | TWI791837B (ja) |
WO (1) | WO2019230312A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022004350A1 (ja) * | 2020-06-30 | 2022-01-06 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
JP2022091338A (ja) * | 2020-12-09 | 2022-06-21 | Hoya株式会社 | マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3262302B2 (ja) * | 1993-04-09 | 2002-03-04 | 大日本印刷株式会社 | 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法 |
US5514499A (en) * | 1993-05-25 | 1996-05-07 | Kabushiki Kaisha Toshiba | Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same |
JP2001201842A (ja) * | 1999-11-09 | 2001-07-27 | Ulvac Seimaku Kk | 位相シフトフォトマスクブランクス及び位相シフトフォトマスク並びに半導体装置の製造方法 |
JP2002258458A (ja) * | 2000-12-26 | 2002-09-11 | Hoya Corp | ハーフトーン型位相シフトマスク及びマスクブランク |
US20020197509A1 (en) * | 2001-04-19 | 2002-12-26 | Carcia Peter Francis | Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks |
US7011910B2 (en) * | 2002-04-26 | 2006-03-14 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
JP2005156700A (ja) * | 2003-11-21 | 2005-06-16 | Shin Etsu Chem Co Ltd | 位相シフトマスクブランク、位相シフトマスク、位相シフトマスクブランクの製造方法、及びパターン転写方法 |
KR20100009558A (ko) | 2007-04-27 | 2010-01-27 | 호야 가부시키가이샤 | 포토마스크 블랭크 및 포토마스크 |
JP5257256B2 (ja) * | 2009-06-11 | 2013-08-07 | 信越化学工業株式会社 | フォトマスクの製造方法 |
JP5714266B2 (ja) * | 2009-08-25 | 2015-05-07 | Hoya株式会社 | マスクブランク、転写用マスクおよびこれらの製造方法 |
NL2007303A (en) | 2010-09-23 | 2012-03-26 | Asml Netherlands Bv | Process tuning with polarization. |
JP6005530B2 (ja) * | 2013-01-15 | 2016-10-12 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
KR102166222B1 (ko) * | 2013-01-15 | 2020-10-15 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법 |
JP6373607B2 (ja) * | 2013-03-08 | 2018-08-15 | Hoya株式会社 | マスクブランクの製造方法および位相シフトマスクの製造方法 |
JP6153894B2 (ja) * | 2014-07-11 | 2017-06-28 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
US10146123B2 (en) * | 2014-12-26 | 2018-12-04 | Hoya Corporation | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
JP6418035B2 (ja) * | 2015-03-31 | 2018-11-07 | 信越化学工業株式会社 | 位相シフトマスクブランクス及び位相シフトマスク |
JP6352224B2 (ja) * | 2015-07-17 | 2018-07-04 | Hoya株式会社 | 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
JP6266842B2 (ja) * | 2015-08-31 | 2018-01-24 | Hoya株式会社 | マスクブランク、マスクブランクの製造方法、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
TWI684822B (zh) * | 2015-09-30 | 2020-02-11 | 日商Hoya股份有限公司 | 空白遮罩、相位移轉遮罩及半導體元件之製造方法 |
SG11201803116UA (en) * | 2015-11-06 | 2018-05-30 | Hoya Corp | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
JP6302520B2 (ja) * | 2016-09-07 | 2018-03-28 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
-
2018
- 2018-05-30 JP JP2018103475A patent/JP6938428B2/ja active Active
-
2019
- 2019-05-08 KR KR1020207032439A patent/KR20210014100A/ko not_active Application Discontinuation
- 2019-05-08 CN CN201980034268.8A patent/CN112166376A/zh active Pending
- 2019-05-08 SG SG11202010537VA patent/SG11202010537VA/en unknown
- 2019-05-08 WO PCT/JP2019/018386 patent/WO2019230312A1/ja active Application Filing
- 2019-05-08 US US17/058,591 patent/US20210132488A1/en not_active Abandoned
- 2019-05-24 TW TW108118000A patent/TWI791837B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2019207359A (ja) | 2019-12-05 |
TW202004328A (zh) | 2020-01-16 |
JP6938428B2 (ja) | 2021-09-22 |
WO2019230312A1 (ja) | 2019-12-05 |
US20210132488A1 (en) | 2021-05-06 |
KR20210014100A (ko) | 2021-02-08 |
TWI791837B (zh) | 2023-02-11 |
CN112166376A (zh) | 2021-01-01 |
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