SG11201907932UA - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
SG11201907932UA
SG11201907932UA SG11201907932UA SG11201907932UA SG11201907932UA SG 11201907932U A SG11201907932U A SG 11201907932UA SG 11201907932U A SG11201907932U A SG 11201907932UA SG 11201907932U A SG11201907932U A SG 11201907932UA SG 11201907932U A SG11201907932U A SG 11201907932UA
Authority
SG
Singapore
Prior art keywords
memory device
semiconductor memory
substrates
element layers
vias
Prior art date
Application number
SG11201907932UA
Other languages
English (en)
Inventor
Masaru Koyanagi
Original Assignee
Toshiba Memory Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Memory Corp filed Critical Toshiba Memory Corp
Publication of SG11201907932UA publication Critical patent/SG11201907932UA/en

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    • GPHYSICS
    • G11INFORMATION STORAGE
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    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/24Bit-line control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
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    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1434Memory
    • H01L2924/145Read-only memory [ROM]
    • H01L2924/1451EPROM
    • H01L2924/14511EEPROM

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112164688B (zh) * 2017-07-21 2023-06-13 联华电子股份有限公司 芯片堆叠结构及管芯堆叠结构的制造方法
JP7159036B2 (ja) * 2018-12-25 2022-10-24 キオクシア株式会社 メモリデバイス
JP2020141100A (ja) * 2019-03-01 2020-09-03 キオクシア株式会社 半導体装置およびその製造方法
JP2020145231A (ja) 2019-03-04 2020-09-10 キオクシア株式会社 半導体装置およびその製造方法
JP2020178010A (ja) * 2019-04-17 2020-10-29 キオクシア株式会社 半導体記憶装置
JP7282699B2 (ja) 2020-01-21 2023-05-29 キオクシア株式会社 半導体記憶装置
JP2021141290A (ja) 2020-03-09 2021-09-16 キオクシア株式会社 半導体装置およびその製造方法
TWI827324B (zh) * 2022-10-26 2023-12-21 華邦電子股份有限公司 記憶裝置的拾取結構及記憶裝置之製造方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3129928B2 (ja) 1995-03-30 2001-01-31 シャープ株式会社 樹脂封止型半導体装置
JP3667165B2 (ja) 1999-08-11 2005-07-06 住友大阪セメント株式会社 工業用固形燃料及びその製造方法
JP3668165B2 (ja) 2001-09-11 2005-07-06 松下電器産業株式会社 半導体装置
US7368810B2 (en) 2003-08-29 2008-05-06 Micron Technology, Inc. Invertible microfeature device packages
JP2006332342A (ja) 2005-05-26 2006-12-07 Shinko Electric Ind Co Ltd 半導体装置
KR100945504B1 (ko) * 2007-06-26 2010-03-09 주식회사 하이닉스반도체 스택 패키지 및 그의 제조 방법
KR100909562B1 (ko) * 2007-12-21 2009-07-27 주식회사 동부하이텍 반도체 소자 및 그 제조방법
US8106520B2 (en) * 2008-09-11 2012-01-31 Micron Technology, Inc. Signal delivery in stacked device
EP2414801B1 (fr) * 2009-03-30 2021-05-26 QUALCOMM Incorporated Boîtier de puces de circuit intégré avec processeur et puces de mémoire empilés
KR20110012673A (ko) * 2009-07-31 2011-02-09 주식회사 하이닉스반도체 반도체 패키지 및 이를 이용한 스택 패키지
JP2011123955A (ja) * 2009-12-11 2011-06-23 Elpida Memory Inc 半導体システム
US8546188B2 (en) * 2010-04-09 2013-10-01 International Business Machines Corporation Bow-balanced 3D chip stacking
KR101817156B1 (ko) * 2010-12-28 2018-01-10 삼성전자 주식회사 관통 전극을 갖는 적층 구조의 반도체 장치, 반도체 메모리 장치, 반도체 메모리 시스템 및 그 동작방법
KR101828490B1 (ko) * 2011-08-30 2018-02-12 삼성전자주식회사 관통전극을 갖는 반도체 소자 및 그 제조방법
ITVI20120060A1 (it) * 2012-03-19 2013-09-20 St Microelectronics Srl Sistema elettronico avente un' aumentata connessione tramite l'uso di canali di comunicazione orizzontali e verticali
US10090349B2 (en) 2012-08-09 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
JP5802631B2 (ja) * 2012-09-06 2015-10-28 株式会社東芝 半導体装置
TWI588946B (zh) * 2012-12-21 2017-06-21 高通公司 背對背堆疊積體電路總成及製造方法
KR102077608B1 (ko) * 2013-09-26 2020-02-17 에스케이하이닉스 주식회사 반도체 칩 및 이를 갖는 스택 패키지
JP2015176958A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置及びその製造方法
JP6259737B2 (ja) 2014-03-14 2018-01-10 東芝メモリ株式会社 半導体装置及びその製造方法
JP2016004860A (ja) * 2014-06-16 2016-01-12 マイクロン テクノロジー, インク. 半導体装置
JP2015029138A (ja) * 2014-10-08 2015-02-12 ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. 半導体装置のテスト方法、および半導体装置の製造方法
WO2016118209A2 (fr) * 2014-11-05 2016-07-28 Massachusetts Institute Of Technology Dispositifs à semi-conducteur multicouche fabriqués à l'aide d'une combinaison d'un substrat et de structures de trou d'interconnexion, et techniques de fabrication
KR102360381B1 (ko) * 2014-12-01 2022-02-11 삼성전자주식회사 적층 구조를 갖는 반도체 소자 및 그 제조방법
US9589946B2 (en) * 2015-04-28 2017-03-07 Kabushiki Kaisha Toshiba Chip with a bump connected to a plurality of wirings
JP6515724B2 (ja) * 2015-07-31 2019-05-22 富士通株式会社 半導体装置
JP6663104B2 (ja) * 2015-09-10 2020-03-11 富士通株式会社 半導体装置および半導体装置の制御方法
KR102500813B1 (ko) * 2015-09-24 2023-02-17 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US9786619B2 (en) * 2015-12-31 2017-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof
US10068899B2 (en) * 2016-08-18 2018-09-04 Globalfoundries Inc. IC structure on two sides of substrate and method of forming
JP2018137299A (ja) * 2017-02-21 2018-08-30 東芝メモリ株式会社 半導体装置
US10141391B2 (en) * 2017-02-23 2018-11-27 International Business Machines Corporation Microstructure modulation for 3D bonded semiconductor containing an embedded resistor structure
KR102285787B1 (ko) * 2017-03-03 2021-08-04 삼성전자 주식회사 3차원 반도체 소자
US10157832B2 (en) * 2017-03-08 2018-12-18 Globalfoundries Inc. Integrated circuit structure including via interconnect structure abutting lateral ends of metal lines and methods of forming same
US10651153B2 (en) * 2018-06-18 2020-05-12 Intel Corporation Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bonding

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CN110447102B (zh) 2024-03-05
TW201836125A (zh) 2018-10-01
TWI807342B (zh) 2023-07-01
EP3598493A4 (fr) 2021-01-20
TWI667772B (zh) 2019-08-01
WO2018168198A1 (fr) 2018-09-20
JP2018156968A (ja) 2018-10-04
CN110447102A (zh) 2019-11-12
US20190385984A1 (en) 2019-12-19
US11594523B2 (en) 2023-02-28
EP3598493A1 (fr) 2020-01-22
TW202207424A (zh) 2022-02-16
US20220005789A1 (en) 2022-01-06

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