IN2015DN02878A - - Google Patents
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- Publication number
- IN2015DN02878A IN2015DN02878A IN2878DEN2015A IN2015DN02878A IN 2015DN02878 A IN2015DN02878 A IN 2015DN02878A IN 2878DEN2015 A IN2878DEN2015 A IN 2878DEN2015A IN 2015DN02878 A IN2015DN02878 A IN 2015DN02878A
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- India
- Prior art keywords
- layer
- bonding
- circuit layer
- circuit
- semiconductor element
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000002923 metal particle Substances 0.000 abstract 1
- 239000011368 organic material Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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PCT/JP2013/077217 WO2014057902A1 (fr) | 2012-10-09 | 2013-10-07 | Dispositif à semi-conducteur, carte de circuit imprimé en céramique et procédé de fabrication de dispositif à semi-conducteur |
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AT513747B1 (de) * | 2013-02-28 | 2014-07-15 | Mikroelektronik Ges Mit Beschränkter Haftung Ab | Bestückungsverfahren für Schaltungsträger und Schaltungsträger |
TW201543720A (zh) * | 2014-05-06 | 2015-11-16 | Genesis Photonics Inc | 封裝結構及其製備方法 |
JP6565527B2 (ja) * | 2014-09-30 | 2019-08-28 | 三菱マテリアル株式会社 | Ag下地層付パワーモジュール用基板及びパワーモジュール |
WO2016098723A1 (fr) * | 2014-12-16 | 2016-06-23 | 京セラ株式会社 | Substrat de circuit et dispositif électronique |
JP6481409B2 (ja) * | 2015-02-19 | 2019-03-13 | 三菱マテリアル株式会社 | パワーモジュール用基板及びパワーモジュール |
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JP5707886B2 (ja) * | 2010-11-15 | 2015-04-30 | 三菱マテリアル株式会社 | パワーモジュール用基板、冷却器付パワーモジュール用基板、パワーモジュールおよびパワーモジュール用基板の製造方法 |
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TW201421618A (zh) | 2014-06-01 |
WO2014057902A1 (fr) | 2014-04-17 |
KR102163532B1 (ko) | 2020-10-08 |
KR20150063065A (ko) | 2015-06-08 |
TWI609462B (zh) | 2017-12-21 |
JP2014078558A (ja) | 2014-05-01 |
EP2908333A4 (fr) | 2016-06-08 |
US20150255419A1 (en) | 2015-09-10 |
US9401340B2 (en) | 2016-07-26 |
JP5664625B2 (ja) | 2015-02-04 |
CN104704618A (zh) | 2015-06-10 |
CN104704618B (zh) | 2017-08-08 |
EP2908333A1 (fr) | 2015-08-19 |
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