TW202005020A - Ｉｇｂｔ模組散熱結構 - Google Patents

Ｉｇｂｔ模組散熱結構 Download PDF

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TW202005020A
TW202005020A TW107118138A TW107118138A TW202005020A TW 202005020 A TW202005020 A TW 202005020A TW 107118138 A TW107118138 A TW 107118138A TW 107118138 A TW107118138 A TW 107118138A TW 202005020 A TW202005020 A TW 202005020A
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heat dissipation
igbt module
dissipation structure
igbt
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葉子暘
吳俊龍
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艾姆勒車電股份有限公司
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Priority to TW107118138A priority Critical patent/TW202005020A/zh
Priority to US16/182,535 priority patent/US10475723B1/en
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Abstract

一種IGBT模組散熱結構，包括：IGBT晶片層、接合層、冷噴塗層、熱噴塗層、及散熱層。所述熱噴塗層設置在所述散熱層之上，所述冷噴塗層設置在所述熱噴塗層之上，所述接合層設置在所述冷噴塗層之上，所述IGBT晶片層設置在所述接合層之上。

Description

IGBT模組散熱結構
本發明涉及IGBT模組，具體來說是涉及IGBT模組散熱結構。
目前電動汽車/混合動力汽車所使用的大功率整流器(Inverter)多採用IGBT(Insulated Gate Bipolar Transistor：絕緣閘極雙極性電晶體)晶片。因此，大功率整流器工作時所產生的熱量，將導致IGBT晶片溫度升高，如果沒有適當的散熱措施，就可能使IGBT晶片的溫度超過所允許的溫度，從而導致性能惡化以致損壞。因此，IGBT散熱技術成為相關技術人員急於解決的問題。
目前DBC(Direct Bonding Copper：陶瓷-金屬複合板結構)板已成為IGBT模組散熱結構的首選材料。請參考圖1及圖2所示，為一種現有的IGBT模組散熱結構，其主要包括有IGBT晶片層11A、上焊接層12A、DBC板13A、下焊接層14A、及散熱層15A。其中，DBC板13A由上到下依次為上金屬層131A、陶瓷層132A和下金屬層133A。然而，DBC板13A的導熱能力有限，當IGBT晶片層11A的IGBT晶片111A產生熱量時，不能及時通過DBC板13A傳遞到散熱層15A，並且DBC板13A與散熱層15A之間必需透過下焊接層14A才能夠形成連接，而一整片的下焊接層14A會極易出現空焊現象，且會增加介面阻抗，從而影響到導熱性能。
於是本發明人有感於上述缺失之可改善，乃特潛心研究並配 合學理之運用，終於提出一種設計合理且有效改善上述缺失之本發明。
本發明之主要目的在於提供一種IGBT模組散熱結構，以解決上述問題。
為了達到上面所描述的，本發明提供一種IGBT模組散熱結構，包括：IGBT晶片層、接合層、冷噴塗層、熱噴塗層、及散熱層，所述熱噴塗層設置在所述散熱層之上，所述冷噴塗層設置在所述熱噴塗層之上，所述接合層設置在所述冷噴塗層之上，所述IGBT晶片層設置在所述接合層之上。
優選地，所述熱噴塗層是由陶瓷材料所構成。
優選地，所述陶瓷材料選自氧化鋁、氮化鋁、或氮化矽的至少其一。
優選地，所述熱噴塗層的厚度為20μm~500μm。
優選地，所述冷噴塗層是由金屬材料所構成。
優選地，所述金屬材料選自銅、銅合金、或鎳合金的至少其一。
優選地，所述冷噴塗層的厚度為10μm~1000μm。
優選地，所述冷噴塗層為圖案化層。
是以，本發明透過兩道噴塗方式分別形成有冷噴塗層及熱噴塗層，以將IGBT晶片的熱量迅速且均勻的導到整個散熱層的散熱鰭片上，相較於現有的IGBT模組散熱結構的DBC板，本發明可同時具備有冷噴塗金屬材的導電及導熱性能和熱噴塗陶瓷材的高崩潰電壓的優點，並且無需透過焊接層而是直接在散熱層表面上形成熱噴塗層，不會因焊接層造成有空焊問題及介面阻抗問題而影響到導熱性能，使本發明散熱層能發揮最大的吸熱及散熱效能。
[現有技術]
11A‧‧‧IGBT晶片層
12A‧‧‧上焊接層
13A‧‧‧DBC板
131A‧‧‧上金屬層
132A‧‧‧陶瓷層
133A‧‧‧下金屬層
14A‧‧‧下焊接層
15A‧‧‧散熱層
[本發明]
11‧‧‧IGBT晶片層
111‧‧‧IGBT晶片
12‧‧‧接合層
13‧‧‧冷噴塗層
14‧‧‧熱噴塗層
15‧‧‧散熱層
圖1為現有技術的IGBT模組散熱結構側視分解示意圖。
圖2為現有技術的IGBT模組散熱結構側視示意圖。
圖3為本發明的IGBT模組散熱結構分解側視示意圖。
圖4為本發明的IGBT模組散熱結構側視示意圖。
以下是通過特定的具體實施例來說明本發明所公開有關“IGBT模組散熱結構”的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用，本說明書中的各項細節也可基於不同觀點與應用，在不悖離本發明的精神下進行各種修飾與變更。另外，本發明的附圖僅為示意說明，並非依實際尺寸的描繪，予以聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容，但所公開的內容並非用以限制本發明的技術範圍。
請參考圖3至圖4，為本發明所提供的一種IGBT模組散熱結構。如圖所示，根據本發明所提供的IGBT模組散熱結構，從上到下依序為IGBT晶片層11、接合層12、冷噴塗層13、熱噴塗層14、及散熱層15。
熱噴塗層(thermal spray layer)14設置在散熱層15之上。散熱層15可以是散熱器(heat sink)，也可是具散熱作用的金屬板。熱噴塗層14是由陶瓷材料所構成。詳細來說，熱噴塗層14是利用電漿熔射方法(plasma spraying process)，以電漿火炬產生之高熱將陶瓷粉末由常溫升至攝氏兩千五百度以上高溫，將陶瓷粉末由固態轉化為熔融液態，再靠電漿的高速氣體推動熔融的陶瓷，使之霧化並噴塗在散熱層15表面上，形成一具有預定厚度的熱噴塗層，本實施例使用之電漿氣體為氬氣，同時亦可能使用氮氣、氫 氣及其他氣體。因此，相較於現有的IGBT模組散熱結構的DBC板與散熱層之間必需另外透過焊接層才能夠形成連接，本發明無需透過焊接層而是直接在散熱層15表面上形成熱噴塗層14。
進一步來說，熱噴塗層14的陶瓷材料可選自氧化鋁，但也可以選自氮化鋁或氮化矽。並且，熱噴塗層14的厚度依據噴塗在散熱層15的表面上的噴塗時間而預先設定。在本實施例中，熱噴塗層14的厚度為20μm~500μm(微米)，較佳為400μm，能達到較佳的絕緣和導熱作用。
冷噴塗層(cold spray layer)13設置在熱噴塗層14之上。冷噴塗層13是由金屬材料所構成。詳細來說，冷噴塗層13是利用超音速氣流將金屬粉末加速，使金屬粉末高速撞擊在熱噴塗層14表面，進而嵌入熱噴塗層14，在撞擊同時金屬粉末產生大量塑性變形，不再維持原粉末形貌，大量塑性變形之後的金屬粉末會堆疊成緻密的層狀結構，形成一具有預定厚度的冷噴塗層。在本實施例中，冷噴塗層13的厚度為10μm~1000μm，較佳為300μm。
進一步來說，冷噴塗層13的金屬材料可選自銅、銅合金或鎳合金，但也可以是其他金屬材料。另外，冷噴塗層13還可透過遮罩方式而形成在熱噴塗層14表面的預定區域上，而形成一圖案化層(patterned layer)。
接合層12設置在冷噴塗層13之上，IGBT晶片層11設置在接合層12之上。接合層12可以是錫接合層，但也可以是銀燒結層。IGBT晶片層11可以是由至少一IGBT晶片111所構成。並且，IGBT晶片層11是透過接合層12與冷噴塗層13形成連接。當IGBT晶片111發熱時，可藉由冷噴塗層13和熱噴塗層14將熱量傳導至散熱層15，以向外散熱。
綜合以上所述，本發明透過兩道噴塗方式分別形成有冷噴塗 層13及熱噴塗層14，以將IGBT晶片的熱量迅速且均勻的導到整個散熱層15的散熱鰭片上，相較於現有的IGBT模組散熱結構的DBC板，本發明可同時具備有冷噴塗金屬材的導電及導熱性能和熱噴塗陶瓷材的高崩潰電壓的優點，並且無需透過焊接層而是直接在散熱層表面上形成熱噴塗層，不會因焊接層造成有空焊問題及介面阻抗問題而影響到導熱性能，使本發明散熱層能發揮最大的吸熱及散熱效能。
以上所述僅為本發明之較佳實施例，其並非用以侷限本發明之專利範圍，故舉凡運用本發明說明書及圖式內容所為的等效變化，均同理皆包含於本發明的權利保護範圍內，合予陳明。
11‧‧‧IGBT晶片層
111‧‧‧IGBT晶片
12‧‧‧接合層
13‧‧‧冷噴塗層
14‧‧‧熱噴塗層
15‧‧‧散熱層

Claims (8)

  1. 一種IGBT模組散熱結構，包括：IGBT晶片層、接合層、冷噴塗層、熱噴塗層、及散熱層，所述熱噴塗層設置在所述散熱層之上，所述冷噴塗層設置在所述熱噴塗層之上，所述接合層設置在所述冷噴塗層之上，所述IGBT晶片層設置在所述接合層之上。
  2. 如請求項1所述之IGBT模組散熱結構，其中所述熱噴塗層是由陶瓷材料所構成。
  3. 如請求項2所述之IGBT模組散熱結構，其中所述陶瓷材料選自氧化鋁、氮化鋁、或氮化矽的至少其一。
  4. 如請求項1所述之IGBT模組散熱結構，其中所述熱噴塗層的厚度為20μm~500μm。
  5. 如請求項1所述之IGBT模組散熱結構，其中所述冷噴塗層是由金屬材料所構成。
  6. 如請求項5所述之IGBT模組散熱結構，其中所述金屬材料選自銅、銅合金、或鎳合金的至少其一。
  7. 如請求項4所述之IGBT模組散熱結構，其中所述冷噴塗層的厚度為10μm~1000μm。
  8. 如請求項1所述之IGBT模組散熱結構，其中所述冷噴塗層為圖案化層。
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