CN104704618A - 半导体装置、陶瓷电路基板及半导体装置的制造方法 - Google Patents

半导体装置、陶瓷电路基板及半导体装置的制造方法 Download PDF

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CN104704618A
CN104704618A CN201380052142.6A CN201380052142A CN104704618A CN 104704618 A CN104704618 A CN 104704618A CN 201380052142 A CN201380052142 A CN 201380052142A CN 104704618 A CN104704618 A CN 104704618A
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basalis
circuit layer
layer
semiconductor element
semiconductor device
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CN104704618B (zh
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西元修司
长友义幸
长瀬敏之
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Abstract

本发明所涉及的半导体装置(1)具备：由导电性材料构成的电路层(12)；及搭载于电路层(12)上的半导体元件(3)，在电路层(12)的一面形成有气孔率设在5％以上且55％以下的范围内的基底层(31)，在该基底层(31)之上形成有由接合材料的烧成体构成的接合层(38)，所述接合材料包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物，电路层(12)和半导体元件(3)经由基底层(31)及接合层(38)而接合。

Description

半导体装置、陶瓷电路基板及半导体装置的制造方法
技术领域
本发明涉及一种具备由导电性材料构成的电路层和搭载于该电路层上的半导体元件的半导体装置、用于该半导体装置的陶瓷电路基板、及半导体装置的制造方法。
本申请基于2012年10月09日在日本申请的专利申请2012-224257号主张优选权，并将其内容援用于此。
背景技术
在LED和功率模块等半导体装置中，被设为在由导电材料构成的电路层之上接合半导体元件的结构。
例如，为了控制风力发电、电动车等电动车辆等而使用的大功率控制用的功率半导体元件由于发热量较多，因此作为搭载该功率半导体元件的基板，一直以来广泛使用在例如由AlN(氮化铝)等构成的陶瓷基板上接合导电性优异的金属板作为电路层的陶瓷电路基板。
例如，专利文献1所示的功率模块构成为具备：陶瓷电路基板，在陶瓷基板的一面形成有由金属构成的电路层；及半导体元件，接合于该电路层上。并且，构成为在陶瓷电路基板的另一侧接合有散热板，将由半导体元件产生的热量传递至陶瓷电路基板侧，并经由散热板发散至外部。
在此，在将半导体元件等电子部件接合于电路层上时，例如，如专利文献1所示，广泛使用利用焊锡材料的方法。近年来，从环保的观点考虑，例如Sn-Ag系、Sn-In系或Sn-Ag-Cu系等无铅焊锡成为了主流。
然而，如专利文献1所记载的那样，当经由焊锡材料接合半导体元件等电子部件和电路层时，若在高温环境下使用，则焊锡的一部分会熔化，有可能导致半导体元件等电子部件与电路层的接合可靠性下降。
尤其，近年来期待着从硅半导体将SiC或GaN等化合物半导体元件实用化，可预测半导体元件本身的耐热性的提高，因此难以如以往那样通过利用焊锡材料接合的结构来应对。
因此，作为焊锡材料的代替物，例如，在专利文献2中提出了使用具有金属粒子和有机物的金属糊剂接合半导体元件的技术。
并且，在专利文献3、4中提出了使用包含金属氧化物粒子和由有机物构成的还原剂的氧化物糊剂，将半导体元件等电子部件接合于电路上的技术。
在专利文献2中所记载的金属糊剂中，含有金属粒子和有机物，通过烧结金属粒子来形成由导电性的烧成体构成的接合层，并经由该接合层将半导体元件等电子部件接合于电路层上。
另一方面，在专利文献3、4中所记载的氧化物糊剂中，通过烧结金属氧化物粒子由还原剂还原而生成的金属粒子来形成由导电性的烧成体构成的接合层，并经由该接合层将半导体元件等电子部件接合于电路层上。
如此，当由金属粒子的烧成体形成接合层时，能够在比较低的温度条件下形成接合层，并且接合层本身的熔点升高，因此即使在高温环境下接合强度也不会大幅下降。
专利文献1：日本专利公开2004-172378号公报
专利文献2：日本专利公开2006-202938号公报
专利文献3：日本专利公开2008-208442号公报
专利文献4：日本专利公开2009-267374号公报
然而，如专利文献2所记载的那样，在烧成具有金属粒子和有机物的金属糊剂时，通过有机物的分解反应而产生气体。
并且，如专利文献3、4所记载的那样，在烧结包含金属氧化物粒子和由有机物构成的还原剂的氧化物糊剂时，通过有机物的分解反应以及金属氧化物粒子的还原反应而产生气体。
在此，在上述功率模块中，当通过金属糊剂或氧化物糊剂接合半导体元件和电路层时，因温度的不均匀性等原因，金属糊剂或氧化物糊剂的烧结有时会从半导体元件与电路层的接合面的周边部朝向中央部进行。此时，在接合面的中央部烧结金属糊剂或氧化物糊剂的时刻，已完成接合面的周边部的烧结，导致在接合面的中央部产生的有机物的分解反应和金属氧化物粒子的还原反应所产生的气体残留在接合层内部，有可能无法确保半导体元件与电路层的接合强度。因此，半导体元件与电路层之间的热阻增大，有可能无法将从半导体元件产生的热量有效地传递至电路层侧。
这种问题不仅在上述功率模块中，而且在LED等其他半导体装置中也相同。
发明内容
本发明是鉴于上述情况而完成的，其目的在于提供一种使用包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物的接合材料可靠地接合电路层和半导体元件，并且能够将来自半导体元件的热量有效地传递至电路层侧的半导体装置、用于该半导体装置的陶瓷电路基板、及半导体装置的制造方法。
(1)本发明的一方式的半导体装置，其具备：电路层，由导电性材料构成；及半导体元件，搭载于所述电路层上，其中，在所述电路层的一面形成有气孔率设在5％以上且55％以下的范围内的基底层，在该基底层之上形成有由接合材料的烧成体构成的接合层，所述接合材料包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物，所述电路层和所述半导体元件经由所述基底层及所述接合层而接合。
根据该结构的半导体装置，在电路层的一面形成有气孔率设在5％以上且55％以下的范围内的基底层，因此在形成由包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物的接合材料的烧成体构成的接合层时，即使烧结从半导体元件与电路层的接合面的周边部朝向中央部进行，在接合面的中央部产生的有机物的分解反应和金属氧化物粒子的还原反应所产生的气体也会经由基底层的气孔排出至外部，气体不会残留在接合层内。由此，能够抑制半导体元件与电路层之间的热阻，从而能够将从半导体元件产生的热量有效地传递至电路层侧。
另外，当基底层的气孔率小于5％时，无法有效地排出气体，气体有可能残留在接合层内。另一方面，若基底层的气孔率超过55％，则气孔过多而有可能导致半导体元件与电路层的接合可靠性下降。
根据以上内容，在本发明中，将基底层的气孔率设定在5％以上且小于55％的范围内。
(2)本发明的另一方式的半导体装置，其为(1)所述的的半导体装置，其为如下结构：所述半导体装置具备陶瓷电路基板，所述陶瓷电路基板具有：所述电路层；及陶瓷基板，配设于所述电路层的另一面，所述半导体元件被设为功率半导体元件。
根据该结构的半导体装置，即使在使用发热量较多的功率半导体元件时，也能够将热量有效地传递至电路层。另外，作为功率半导体，可以举出IGBT(Insulated GateBipolar Transistor)和MOSFET等。
(3)本发明的另一方式的陶瓷电路基板，其用于(2)所述的半导体装置，其中，所述陶瓷电路基板具有：电路层，由导电性材料构成；基底层，形成于所述电路层的一面；及陶瓷基板，配设于所述电路层的另一面，所述基底层的气孔率设在5％以上且55％以下的范围内。
根据该结构的陶瓷电路基板，在电路层的一面形成有气孔率设在5％以上且55％以下的范围内的基底层，因此即使在使用包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物的接合材料将半导体元件接合于电路层上时，也能够将从接合材料产生的有机物的分解反应和金属氧化物的还原反应所产生的气体经由基底层的气孔排出至外部，并且能够抑制气体残留在由接合材料的烧成体构成的接合层内，从而能够可靠地接合半导体元件。
(4)本发明的另一方式的半导体装置的制造方法，其为(1)或(2)所述的半导体装置的制造方法，所述制造方法具备：基底层形成工序，在所述电路层的一面形成气孔率设在5％以上且55％以下的范围内的基底层；接合材料配设工序，在所述基底层之上配设包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物的接合材料；半导体元件层压工序，在所述接合材料之上层压所述半导体元件；及烧成工序，以层压所述半导体元件、所述接合材料、所述基底层及所述电路层的状态进行加热，从而在所述基底层之上形成由接合材料的烧成体构成的接合层，所述接合材料包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物，经由所述基底层及所述接合层而接合所述电路层和所述半导体元件。
根据该结构的半导体装置的制造方法，其具备：基底层形成工序，在电路层的一面形成气孔率设在5％以上且55％以下的范围内的基底层；及烧成工序，在该基底层之上形成由包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物的接合材料的烧成体构成的接合层，因此在烧成工序中，即使烧结从半导体元件与电路层的接合面的周边部朝向中央部进行，也能够将在接合面的中央部产生的有机物的分解反应和金属氧化物的还原反应所产生的气体经由基底层的气孔排出至外部，并且能够抑制气体残留在由接合材料的烧成体构成的接合层内。由此，能够可靠地接合半导体元件和电路层。
根据本发明，能够提供一种使用包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物的接合材料可靠地接合电路层和半导体元件，并且能够将来自半导体元件的热量有效地传递至电路层侧的半导体装置、用于该半导体装置的陶瓷电路基板、及半导体装置的制造方法。
附图说明
图1是本发明的一实施方式的半导体装置(功率模块)的示意图。
图2是图1所示的半导体装置(功率模块)的电路层与半导体元件之间的接合界面的放大说明图。
图3是本发明的一实施方式的陶瓷电路基板的说明图。
图4是表示图1所示的半导体装置(功率模块)的制造方法的流程图。
图5是本发明的另一实施方式的半导体装置(LED装置)的示意图。
图6A是实施例中的本发明例1的基底层的截面照片。
图6B是对实施例中的本发明例1的基底层的截面照片进行二值化处理后的图像。
具体实施方式
以下，参考附图对本发明的实施方式进行说明。另外，本实施方式的半导体装置是搭载有为了控制风力发电、电动车等电动车辆等而使用的大功率控制用的功率半导体元件的功率模块。在图1中示出本发明的实施方式的功率模块(半导体装置)。
该功率模块1具备陶瓷电路基板10、半导体元件3及冷却器40。在陶瓷电路基板10上配设有电路层12。半导体元件3接合于电路层12的第一面(一面，即图1中的上表面)及第二面(另一面，即图1中的下表面)中的第一面。冷却器40配设于陶瓷电路基板10的另一侧。
如图1所示，陶瓷电路基板10具备陶瓷基板11、电路层12及金属层13。陶瓷基板11构成绝缘层。电路层12配设于该陶瓷基板11的一面(图1中的上表面)。金属层13配设于陶瓷基板11的另一面(图1中的下表面)。即，陶瓷基板11具有第一面(一面)及第二面(另一面)，在陶瓷基板11的第一面配设有电路层12，在陶瓷基板11的第二面配设有金属层13。
陶瓷基板11防止电路层12与金属层13之间的电连接，由绝缘性较高的AlN(氮化铝)、Si3N4(氮化硅)、Al2O3(氧化铝)等构成。在本实施方式中，由散热性优异的AlN(氮化铝)构成。并且，陶瓷基板11的厚度设定在0.2～1.5mm的范围内，在本实施方式中，设定为0.635mm。
电路层12通过在陶瓷基板11的一面接合具有导电性的铝或铝合金、铜或铜合金的金属板而形成。在本实施方式中，电路层12通过接合纯度为99.99质量％以上的铝(所谓的4N铝)轧制板而形成。另外，电路层12的厚度设定在0.1mm以上且1.0mm以下的范围内，在本实施方式中，设定为0.6mm。并且，在该电路层12上形成有电路图案，其一面(图1中的上表面)被设为供半导体元件3接合的接合面。
金属层13通过在陶瓷基板11的另一面接合铝或铝合金、铜或铜合金等的金属板而形成。在本实施方式中，该金属板(金属层13)被设为纯度为99.99质量％以上的铝(所谓的4N铝)轧制板。在此，金属层13的厚度设定在0.2mm以上且3.0mm以下的范围内，在本实施方式中，设定为1.6mm。
冷却器40用于冷却上述陶瓷电路基板10，具备顶板部41、散热片42及通道43。顶板部41与陶瓷电路基板10接合。散热片42从该顶板部41朝向下方垂直设置。为了使冷却介质(例如冷却水)流通而设置通道43。该冷却器40(顶板部41)优选由导热性良好的材质构成，在本实施方式中，由A6063(铝合金)构成。
半导体元件3由Si等半导体材料构成，在与电路层12的接合面上形成有由Ni、Au等构成的表面处理膜3a。
并且，在图1所示的功率模块1中，在电路层12与半导体元件3之间形成有基底层31及接合层38。
另外，如图1所示，基底层31及接合层38并非形成于电路层12的整个表面，而是选择性地仅形成于供半导体元件3配设的部分，即与半导体元件3的接合面上。
如图1所示，基底层31形成于电路层12上，接合层38形成于该基底层31上。
在此，基底层31被设为包含玻璃成分的含玻璃的Ag糊剂的烧成体。如图2所示，该基底层31具备玻璃层32及Ag层33。玻璃层32形成于电路层12侧。即，玻璃层32形成于电路层12上。Ag层33形成于该玻璃层32上。
在玻璃层32内部分散有粒径为几纳米左右的微细的导电性粒子。另外，通过使用例如透射型电子显微镜(TEM)来观察玻璃层32内的导电性粒子。
并且，在Ag层33的内部分散有粒径为几微米左右的玻璃粒子。
另外，该基底层31的厚度方向的电阻值P设为0.5Ω以下。在此，在本实施方式中，基底层31的厚度方向上的电阻值P设为基底层31的上表面与电路层12的上表面之间的电阻值。这是因为，与基底层31的厚度方向的电阻相比，构成电路层12的铝(4N铝)的电阻非常小。另外，在测定该电阻时，测定基底层31的上表面中央点、与从基底层31端部远离与从基底层31的所述上表面中央点至基底层31端部的距离相同距离的电路层12上的点之间的电阻。
并且，在本实施方式中，在该基底层31形成有多个气孔，气孔率设定在5％以上且55％以下的范围内。
另外，形成于该基底层31上的气孔被设为向外部开口的连续气孔(open pore)，且构成为在基底层31的外周面(电路层12与半导体元件3的接合面的外周边部分)开口。
接着，对构成基底层31的含玻璃的Ag糊剂进行说明。该含玻璃的Ag糊剂含有Ag粉末、含有ZnO的无铅玻璃粉末、树脂、溶剂及分散剂，由Ag粉末和无铅玻璃粉末构成的粉末成分的含量设为含玻璃的Ag糊剂整体的60质量％以上90质量％以下，剩余部分为树脂、溶剂及分散剂。另外，在本实施方式中，由Ag粉末和无铅玻璃粉末构成的粉末成分的含量设为含玻璃的Ag糊剂整体的85质量％。
在此，Ag粉末的粒径设为0.05μm以上且10μm以下。另外，存在Ag粉末的粒径越大，所形成的基底层31的气孔率越容易变高的倾向，因此优选设定在超过1.0μm且10μm以下的范围内。并且，Ag粉末的形状既可以为球形，也可以呈扁平形状，还可以将这些混合。
并且，无铅玻璃粉末含有Bi2O3、ZnO、B2O3作为主成分，其玻化温度设为300℃以上且450℃以下，软化温度设为600℃以下、结晶化温度设为450℃以上。
并且，该含玻璃的Ag糊剂的粘度调整为10Pa·s以上且500Pa·s以下，更优选调整为50Pa·s以上且300Pa·s以下。
溶剂适合沸点为200℃以上的溶剂，在本实施方式中，使用二甘醇二丁醚。
树脂为调整含玻璃的Ag糊剂的粘度的物质，适合在500℃以上时分解的树脂。在本实施方式中，使用乙基纤维素。另外，存在烧成后的基底层31的气孔率通过树脂含量的增加而变高的倾向。
并且，在本实施方式中，添加二羧酸系的分散剂。另外，也可以不添加分散剂而构成含玻璃的Ag糊剂。
形成于该基底层31之上即Ag层33之上的接合层38被设为包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物的接合材料的烧成体，在本实施方式中，被设为包含氧化银及由有机物构成的还原剂的氧化银糊剂的烧成体。即，接合层38被设为氧化银被还原的Ag的烧成体。在此，通过还原氧化银而析出的粒子的粒径例如为10nm～1μm，非常微细，因此会形成致密的Ag的烧成层。即，由于粒径微细，因此烧成时该微细的粒子会填补存在于氧化银糊剂内的空间，其结果，形成致密的Ag的烧成层。另外，在该接合层38中，在基底层31的Ag层33中观察到的玻璃粒子不存在或非常少。
构成该接合层38的氧化银糊剂含有氧化银粉末、还原剂、树脂及溶剂，在本实施方式中，除这些以外，还含有有机金属化合物粉末。
氧化银粉末的含量设为氧化银糊剂整体的60质量％以上且92质量％以下，还原剂的含量设为氧化银糊剂整体的5质量％以上且15质量％以下，有机金属化合物粉末的含量设为氧化银糊剂整体的0质量％以上且10质量％以下，剩余部分为溶剂。在该氧化银糊剂中，为了抑制未反应的有机物残留在通过烧结而得到的接合层38，优选不添加分散剂及树脂。
还原剂被设为具有还原性的有机物，例如可以使用醇、有机酸。
有机金属化合物具有通过由热分解而生成的有机酸来促进氧化银的还原反应和有机物的分解反应的作用，例如可以适用甲酸Ag、乙酸Ag、丙酸Ag、苯甲酸Ag、草酸Ag等羧酸系金属盐等。
另外，该氧化银糊剂的粘度调整为10Pa·s以上且100Pa·s以下，更优选调整为30Pa·s以上且80Pa·s以下。
以下，参考图4所示的流程图，对本实施方式的功率模块1的制造方法进行说明。
首先，准备成为电路层12的铝板及成为金属层13的铝板，将这些铝板分别经由钎料层压于陶瓷基板11的一面及另一面，通过加压、加热后冷却来接合所述铝板和陶瓷基板11(电路层及金属层形成工序S01)。另外，该钎焊的温度设定为640℃～650℃。
接着，在金属层13的另一面侧经由钎料而接合冷却器40(冷却器接合工序S02)。另外，冷却器40的钎焊的温度设定为590℃～610℃。
并且，在电路层12的表面上涂布含玻璃的Ag糊剂(含玻璃的Ag糊剂涂布工序S03)。
另外，在涂布含玻璃的Ag糊剂时，可以采用网版印刷法、胶版印刷法、感光性工艺等各种方法。在本实施方式中，通过网版印刷法，将含玻璃的Ag糊剂形成于电路层12的供半导体元件3搭载的部分。
接着，以在电路层12表面涂布含玻璃的Ag糊剂的状态进行干燥之后，装入加热炉内，进行含玻璃的Ag糊剂的烧成(基底层烧成工序S04)。另外，具有若烧成温度较低则气孔率变高的倾向，因此在本实施方式中，将基底层烧成工序S04中的烧成温度设定为470～600℃。
通过该基底层烧成工序S04，在电路层12的一面形成具备玻璃层32及Ag层33的基底层31。此时，在电路层12的表面上自然产生的铝氧化皮膜会通过玻璃层32而被熔化去除，从而在电路层12直接形成玻璃层32。
并且，粒径为几纳米左右的微细的导电性粒子分散于玻璃层32的内部。该导电性粒子被设为含有Ag或Al中的至少一方的结晶性粒子，其可推测为是烧成时在玻璃层32内部析出的物质。
另外，粒径为几微米左右的玻璃粒子分散于Ag层33的内部。该玻璃粒子可推测为是在进行Ag粒子的烧结的过程中残留的玻璃成分凝集而成的物质。
并且，在本实施方式中，将Ag粉末的粒径设定为比较大且将烧成温度设定为比较低的温度，由此基底层31成为多孔状态，其气孔率设定在5％以上且55％以下的范围内。
如此一来，如图3所示，制造出在电路层12的一面形成有基底层31的本实施方式的陶瓷电路基板10。
接着，在陶瓷电路基板10的基底层31的表面上涂布氧化银糊剂(氧化银糊剂涂布工序S05)。
另外，在涂布氧化银糊剂时，可以采用网版印刷法、胶版印刷法、感光性工艺等各种方法。在本实施方式中，通过网版印刷法印刷氧化银糊剂。
接着，以涂布氧化银糊剂的状态进行干燥(例如，在室温、大气气氛下保管24小时)之后，在氧化银糊剂之上层压半导体元件3(半导体元件层压工序S06)。
并且，以层压半导体元件3和陶瓷电路基板10的状态装入加热炉内，进行氧化银糊剂的烧成(接合层烧成工序S07)。此时，将载荷设为0～10MPa，将烧成温度设为150～400℃。
并且，优选通过以沿层压方向对半导体元件3和陶瓷电路基板10加压的状态进行加热，由此能够更可靠地进行接合。
如此一来，在基底层31之上形成接合层38，且半导体元件3和电路层12接合。由此，制造出本实施方式的功率模块1。
根据如上构成的本实施方式的功率模块、陶瓷电路基板，在电路层12的一面形成有气孔率设在5％以上且55％以下的范围内的基底层31，因此当经由包含氧化银粒子和还原剂的氧化银糊剂的烧成体构成的接合层38接合电路层和半导体元件时，氧化银的还原反应和氧化银糊剂中所包含的有机物的分解反应所产生的气体经由基底层31的气孔排出至外部，从而能够抑制气体残留在接合层38内。由此，能够抑制半导体元件3与电路层12之间的热阻，并且能够将从半导体元件3产生的热量有效地传递至陶瓷电路基板10侧。
在本实施方式中，基底层31的气孔率设定为5％以上，因此能够可靠地排出上述气体，并且能够抑制气体残留在接合层38内。并且，基底层31的气孔率设定为55％以下，因此半导体元件3和电路层12可靠地接合，从而能够确保半导体元件3与电路层的接合可靠性。
并且，在本实施方式中，接合层38被设为包含氧化银和还原剂的氧化银糊剂的烧成体，因此在烧成氧化银糊剂时，氧化银由还原剂还原而成为微细的银粒子，从而能够使接合层38成为致密的结构。即，由于银粒子微细，因此烧成时微细的银粒子会填补存在于氧化银糊剂内的空间，其结果，形成具有致密的结构的接合层38。并且，还原剂在还原氧化银时分解，因此难以残留在接合层38中，从而能够确保接合层38中的导电性及强度。另外，由于能够在例如300℃这种比较低的温度条件下烧成，因此能够将半导体元件3的接合温度抑制得较低，并且能够减小对半导体元件3的热负荷。
另外，在本实施方式中，基底层31具备形成于电路层12的一面的玻璃层32、及层压于该玻璃层32上的Ag层33，因此能够使形成于电路层12的表面上的氧化皮膜与玻璃层32反应而去除，从而能够可靠地接合电路层12和半导体元件3。
而且，在本实施方式中，粒径设为几纳米左右的微细的导电性粒子分散于玻璃层32内部，因此在玻璃层32中也可以确保导电性，具体而言，由于包含玻璃层32的基底层31的厚度方向的电阻值P设定为0.5Ω以下，因此能够经由基底层31及接合层38在半导体元件3与电路层12之间可靠地通电，从而能够构成可靠性较高的功率模块1。
以上，对本发明的实施方式进行了说明，但本发明并不限定于此，在不脱离本发明的技术思想的范围内可以适当地进行变更。
例如，在本实施方式中，对使用含玻璃的Ag糊剂形成气孔率为5％以上且55％以下的基底层31的情况进行了说明，但并不限定于此，也可以使糊剂内含有微珠而在基底层中形成气孔，或者使糊剂内含有发泡剂而在基底层中形成气孔。不限定制造方法，只要将基底层的气孔率设定在5％以上且55％以下的范围内即可。
并且，关于含玻璃的Ag糊剂的原料、配合量，并不限定于实施方式所记载的情况。例如，对使用无铅玻璃粉末的情况进行了说明，但也可以是含有铅的玻璃。
另外，作为形成接合层的接合材料，对使用包含氧化银的氧化银糊剂的情况进行了说明，但并不限定于此，也可以是包含金和铜等其他金属粒子或金属氧化物粒子的糊剂。
并且，关于氧化银糊剂的原料、配合量，并不限定于实施方式所记载的情况。例如也可以不含有机金属化合物。
另外，氧化银糊剂除了氧化银粉末及还原剂以外，还可以含有Ag粒子。Ag粒子介于氧化银粉末之间，由此氧化银被还原而得到的Ag和该Ag粒子烧结，从而能够使接合层成为更加致密的结构。由此，能够将接合时的半导体元件的加压压力设定得较低。
并且，该Ag粒子的表层中也可以包含有机物。此时，能够利用有机物分解时的热量来提高低温下的烧结性。
另外，关于基底层31中的玻璃层32和Ag层33的厚度、接合层38的厚度，也并不限定于本实施方式。
并且，也能够由包含Ag粉末的糊剂来形成接合层。该糊剂能够由Ag粉末、树脂及溶剂构成。此时，加热时Ag粉末烧结，并且树脂和溶剂等有机物的分解反应所产生的气体经由基底层的气孔排出至外部，由此能够形成致密的接合层。即，树脂和溶剂等有机物的分解反应所产生的气体经由基底层31的气孔排出至外部，由此不会残留在接合层内，其结果，在接合层内，不会因接合层内的气体的残留而形成空洞等。因此，能够形成致密的接合层。
并且，在本实施方式中，对由铝板构成电路层及金属层的情况进行了说明，但并不限定于此，电路层及金属层也可以由铝板或铝合金板、铜板或铜合金板构成。
另外，对使用由AlN构成的陶瓷基板作为绝缘层的情况进行了说明，但并不限定于此，也可以使用由Si3N4或Al2O3等构成的陶瓷基板，还可以由绝缘树脂构成绝缘层。
并且，对通过钎焊来接合铝板和陶瓷基板的情况进行了说明，但并不限定于此，也可以适用瞬间液相扩散连接法(Transient Liquid Phase Bonding)、铸造法等。
另外，当将构成电路层及金属层的金属板由铜或铜合金构成时，在将由铜或铜合金构成的金属板接合于陶瓷基板时，可以适用直接接合法(DBC法)、活性金属钎焊法、铸造法等。
并且，对将成为电路层的铝板接合于陶瓷基板，并且接合冷却器之后，在电路层上形成基底层的情况进行了说明，但并不限定于此，也可以在将铝板接合于陶瓷基板之前或者接合冷却器之前形成基底层。
另外，对由铝构成冷却器的顶板部的情况进行了说明，但也可以由铝合金、或包含铝的复合材料等构成，还可以由其他材料构成。另外，作为冷却器，通过具有散热片及冷却介质的通道的冷却器进行了说明，但冷却器的结构并没有特别限定。
并且，在本实施方式中，作为半导体装置，举搭载有功率半导体元件的功率模块为例子进行了说明，但并不限定于此，只要是在由导电性材料构成的电路层上搭载有半导体元件的半导体装置即可。
例如，如图5所示，可以是搭载有LED元件(半导体元件)的LED装置(半导体装置)。
图5所示的LED装置101具备发光元件103、及由导电性材料构成的电路层112。另外，构成为发光元件103通过接合线107与电路层112电连接，并且发光元件103及接合线107通过密封材料108被密封。在电路层112的一面设有气孔率设在5％以上且55％以下的范围内的基底层131，在发光元件103的背面设有导电性反射膜116及保护膜115。并且，构成为在基底层131之上形成有由包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物的接合材料的烧成体构成的接合层138，并且发光元件103和电路层112经由基底层131及接合层138而接合。
在这种LED装置101中，也在电路层112的一面设有气孔率设在5％以上且55％以下的范围内的基底层131，因此能够将有机物的分解反应和金属氧化物粒子的还原反应所产生的气体经由基底层131的气孔排出至外部，从而能够抑制气体残留在接合层138内。
实施例
以下，对为了确认本发明的效果而进行的确认实验的结果进行说明。
使用下面所示的陶瓷电路基板，改变基底层的气孔率来制作各种半导体装置(功率模块)。
在陶瓷基板的一面钎焊接合电路层且在另一面钎焊接合成为金属层的铝板来制作陶瓷电路基板。在此，陶瓷基板设为AlN，尺寸设为27mm×17mm×0.6mm。成为电路层的铝板设为纯度为99.99质量％以上的4N铝，尺寸设为25mm×15mm×0.6mm。成为金属层的铝板设为纯度为99.99％以上的4N铝，尺寸设为25mm×15mm×1.6mm。
半导体元件使用尺寸为13mm×10mm×0.25mm的半导体元件。
使用实施方式中例示的含玻璃的Ag糊剂，通过网版印刷在铝板上形成基底层。另外，将含玻璃的Ag糊剂的涂布厚度设为10μm。
在此，将含玻璃的Ag糊剂中所包含的Ag粉末的形状、粒径、含玻璃的Ag糊剂的烧成条件调整为如表1所示。
关于如上形成的基底层的气孔率，如下进行评价。
切割所得到的陶瓷电路基板，并对基底层的截面进行机械研磨之后，进行Ar离子蚀刻(日本电子株式会社制造Cross section polisher SM-09010)，并使用激光显微镜(基恩士株式会社制造VK X-200)实施截面观察。
并且，对所得到的图像进行二值化处理，将白色部分设为Ag及玻璃，将黑色部设为气孔。另外，将本发明例1的截面观察照片示于图6A，将对该截面观察照片进行二值化处理后的图像示于图6B。由进行了二值化的图像求出黑色部的面积，利用以下所示的公式计算出气孔率。在五个部位的截面进行测定，将各截面的气孔率进行算术平均来作为基底层的气孔率。将结果示于表1。
气孔率＝黑色部(气孔)面积/基底层的整体面积
使用实施方式中例示的氧化银糊剂接合半导体元件和电路层。另外，将氧化银糊剂的涂布厚度设为50μm，烧成条件设为烧成温度为300℃、烧成时间为10分钟、载荷为3MPa。由此，制造出各种半导体装置。
对于所得到的各种半导体装置，评价初始接合率、热阻。
关于接合率，使用超声波探伤装置进行评价，根据以下的公式进行计算。在此，初始接合面积是指接合前的应接合的面积即半导体元件面积。在超声波探伤图像中，用接合部内的白色部表示非接合部分，因此将该白色部的面积作为非接合面积。
接合率＝(初始接合面积-非接合面积)/初始接合面积
如下测定热阻。使用加热片作为半导体元件，制作出半导体装置，将这些半导体装置钎焊接合于冷却器。接着，以100W的功率对加热片进行加热，并使用热电偶来实际测量加热片的温度。并且，实际测量冷却器中流通的冷却介质(乙二醇:水＝9:1)的温度。并且，将加热片的温度与冷却介质的温度之差除以功率的值作为热阻。
另外，以基底层的气孔率设为2％的现有例为基准并设为1，以与该现有例的比率进行评价。将评价结果示于表1。
[表1]
在基底层的气孔率设为2％的现有例中，初始接合率为70％。可以推测是因为在氧化银糊剂烧成时所产生的气体残留在接合层内而生成空隙所致。
另一方面，在基底层的气孔率设为68％的比较例中，初始接合率为88％，高于现有例，但热阻高于现有例。这可以推测是由于在基底层中存在大量气孔，因此无法将来自半导体元件的热量有效地传递至电路层侧。
相对于此，在基底层的气孔率设定在5％以上且55％以下的范围内的本发明例1-9中，初始接合率高达90％以上，热阻也低于现有例。
根据以上内容确认到，根据本发明例，可以得到一种可靠地接合电路层和半导体元件，并且能够将来自半导体元件的热量有效地传递至电路层侧的半导体装置。
产业上的可利用性
根据本发明，能够提供一种使用包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物的接合材料可靠地接合电路层和半导体元件且能够将来自半导体元件的热量有效地传递至电路层侧的半导体装置、用于该半导体装置的陶瓷电路基板、及半导体装置的制造方法。
符号说明
1-功率模块(半导体装置)，3-半导体元件，10-陶瓷电路基板，11-陶瓷基板(绝缘层)，12-电路层，31-基底层，38-接合层，101-LED装置(半导体装置)，103-发光元件(半导体元件)，112-电路层，131-基底层，138-接合层。

Claims (4)

1.一种半导体装置，具备：电路层，由导电性材料构成；及半导体元件，搭载于所述电路层上，其中，
在所述电路层的一面形成有气孔率设在5％以上且55％以下的范围内的基底层，
在该基底层之上形成有由接合材料的烧成体构成的接合层，所述接合材料包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物，
所述电路层和所述半导体元件经由所述基底层及所述接合层而接合。
2.根据权利要求1所述的半导体装置，其中，
所述半导体装置具备陶瓷电路基板，所述陶瓷电路基板具有：所述电路层；及陶瓷基板，配设于所述电路层的另一面，
所述半导体元件被设为功率半导体元件。
3.一种陶瓷电路基板，其用于权利要求2所述的半导体装置，其中，
所述陶瓷电路基板具有：电路层，由导电性材料构成；基底层，形成于所述电路层的一面；及陶瓷基板，配设于所述电路层的另一面，
所述基底层的气孔率设在5％以上且55％以下的范围内。
4.一种半导体装置的制造方法，其为权利要求1或2所述的半导体装置的制造方法，所述半导体装置的制造方法具备：
基底层形成工序，在所述电路层的一面形成气孔率设在5％以上且55％以下的范围内的基底层；
接合材料配设工序，在所述基底层之上配设包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物的接合材料；
半导体元件层压工序，在所述接合材料之上层压所述半导体元件；及
烧成工序，以层压所述半导体元件、所述接合材料、所述基底层及所述电路层的状态进行加热，从而在所述基底层之上形成由接合材料的烧成体构成的接合层，所述接合材料包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物，
经由所述基底层及所述接合层而接合所述电路层和所述半导体元件。
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