US9401340B2 - Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device - Google Patents

Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device Download PDF

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US9401340B2
US9401340B2 US14/433,764 US201314433764A US9401340B2 US 9401340 B2 US9401340 B2 US 9401340B2 US 201314433764 A US201314433764 A US 201314433764A US 9401340 B2 US9401340 B2 US 9401340B2
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layer
underlayer
bonding
circuit layer
semiconductor device
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US20150255419A1 (en
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Shuji Nishimoto
Yoshiyuki Nagatomo
Toshiyuki Nagase
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Definitions

  • the present invention relates to a semiconductor device comprising a circuit layer composed of a conductive material and a semiconductor element mounted on the circuit layer, and a ceramic circuit substrate used in the semiconductor device, and a producing method of a semiconductor device.
  • the semiconductor device such as a power module and a LED, it has a structure in which the semiconductor element is bonded onto a circuit layer composed of a conductive material.
  • a substrate for mounting the power semiconductor device for example, a ceramic circuit substrate in which a metal plate having an excellent conductivity and used as a circuit layer is bonded on a ceramic substrate composed of, for example, AlN (aluminum nitride) has been widely used conventionally.
  • AlN aluminum nitride
  • the power module shown in Patent Document 1 it has a structure comprising a ceramic circuit substrate, one surface of which a circuit layer composed of metal is formed, and a semiconductor element bonded on the circuit layer.
  • a heat sink is bonded to the other side of the ceramic circuit substrate, and the power module is configured so that the heat generated by the semiconductor device is transmitted to the ceramic circuit substrate side and dissipates to the outside via the heat radiation plate.
  • Patent Document 1 when the electronic components such as semiconductor devices are bonded on the circuit layer, for example, as shown in Patent Document 1, a method using a solder material is widely used. Recently, from the viewpoint of environmental protection, for example, a lead-free solder which is Sn—Ag-based, Sn—In-based, Sn—Ag—Cu-based, or the like, is mainly used.
  • Patent Document 2 a technique in which a semiconductor element is bonded using a metal paste having metal particles and an organic substance has been proposed.
  • Patent Documents 3 and 4 a technique in which circuit electronic components such as semiconductor elements are bonded on a circuit using an oxide paste containing a reducing agent including metal oxide particles and an organic substance has been proposed.
  • the metal paste that is described in Patent Document 2
  • it contains metal particles and an organic substance, and since the metal particles are sintered, the bonding layer consisting of a conductive sintered body is formed, and the electronic components such as semiconductor elements are bonded on the circuit layer via the bonding layer.
  • a bonding layer consisting of a conductive sintered body is formed by sintering of metal particles produced by reducing metal oxide particles using the reducing agent, and the electronic components such as semiconductor elements are bonded on the circuit layer via the bonding layer.
  • the bonding layer when the bonding layer is formed of the sintered body of metal particles, the bonding layer can be formed at a relatively low temperature condition and the melting point of the bonding layer itself is increased. Therefore, the bonding strength does not significantly decrease even in a high temperature environment.
  • Patent Document 1 Japanese Unexamined Patent Application, First Publication No. 2004-172378
  • Patent Document 2 Japanese Unexamined Patent Application, First Publication No. 2006-202938
  • Patent Document 3 Japanese Unexamined Patent Application, First Publication No. 2008-208442
  • Patent Document 4 Japanese Unexamined Patent Application, First Publication No. 2009-267374
  • the present invention has been made in view of the above circumstances, and the purpose thereof is to provide a semiconductor device in which a circuit layer and semiconductor element are reliably bonded together using a bonding material including the organic substance and at least one or both of metal particles and metal oxide particles, and which can efficiently transmit heat generated by a semiconductor element toward the circuit layer side; a ceramic circuit substrate used in the semiconductor device; and a producing method of the semiconductor device.
  • a semiconductor device comprises a circuit layer composed of conductive material, and a semiconductor element mounted on the circuit layer,
  • a bonding layer composed of a sintered body of a bonding material including an organic substance and at least one or both of metal particles and metal oxide particles is formed on the underlayer, and
  • circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.
  • the underlayer having a porosity in the range of 5 to 55% is formed on the one surface of the circuit layer, when the bonding layer composed of a sintered body of the bonding material including the organic substance and at least one or both of metal particles and metal oxide particles is formed, even if the sintering proceeds from the peripheral edge portion of the bonding surface between the semiconductor element and the circuit layer toward the central portion thereof, a gas generated by decomposition reaction of the organic substance occurred in the central portion of the bonding surface and by reduction reaction of the metal oxide particles is discharged to outside of the bonding layer through pores of the underlayer, and the gas does not remain inside the bonding layer. Therefore, the thermal resistance between the semiconductor element and the circuit layer can be suppressed and heat generated by the semiconductor element can be efficiently transmitted to the circuit layer side.
  • the porosity of the underlayer is less than 5%, the gas cannot be efficiently discharged and there is a possibility that the gas remains in the bonding layer.
  • the porosity of the underlayer exceeds 55%, the amount of pores is too large and there is a possibility that the bonding reliability between the semiconductor element and the circuit layer is reduced.
  • the porosity of the underlayer is set in the range of 55% 5 to 55%.
  • the semiconductor device according to another aspect of the present invention is the semiconductor device described in (1) which includes a ceramic circuit substrate having the circuit layer and a ceramic substrate disposed on the other surface of the circuit layer, and the semiconductor element is a power semiconductor device.
  • the semiconductor device configured as above, even if a power semiconductor device having a large amount of heat generation is used, heat can be efficiently transferred to the circuit layer.
  • IGBT Insulated Gate Bipolar Transistor
  • MOSFET Metal Organic Field-effect transistor
  • the ceramic circuit substrate according to another aspect of the present invention and used in the semiconductor device described in (2) includes a circuit layer composed of a conductive material, an underlayer formed on the one surface of the circuit layer, and a ceramic substrate disposed on the other surface of the circuit layer, and a porosity of the underlayer is in the range of 5 to 55%.
  • the underlayer having a porosity in the range of 5 to 55% is formed on the one surface of the circuit layer, even when the semiconductor element is bonded on the circuit layer using the bonding material including the organic substance and at least one or both of metal particles and the metal oxide particles, the gas generated by decomposition reaction of the organic substance occurred in the bonding material and by reduction reaction of the metal oxide can be discharged to the outside of the bonding layer through the pores of the underlayer, it is possible to prevent that the gas remains in the bonding layer composed of a sintered body of the bonding material, and the semiconductor element can be reliably bonded.
  • a producing method of a semiconductor device is a producing method thereof described in (1) and (2), and the producing method includes:
  • an underlayer forming step forming the underlayer having a porosity in the range of 5 to 55% on the one surface of the circuit layer;
  • a bonding material arranging step arranging a bonding material including the organic substance and at least one or both of metal particles and metal oxide particles on the underlayer a semiconductor element laminating step laminating the semiconductor element on the bonding material;
  • a sintering step heating the semiconductor element, the bonding material, the underlayer, and the circuit layer in the state of laminating them, and forming a bonding layer composed of a sintered body of the bonding material including the organic substance and at least one or both of metal particles and metal oxide particles on the underlayer,
  • circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.
  • the producing method since the producing method includes the underlayer forming step forming the underlayer having a porosity in the range of 5 to 55% on the one surface of the circuit layer and the sintering step forming the bonding layer composed of a sintered body of the bonding material including the organic substance and at least one or both of metal particles and metal oxide particles on the underlayer, even if, in the sintering step, the sintering proceeds from the peripheral edge portion of the bonding surface between the semiconductor element and the circuit layer toward the central portion thereof, the gas generated by decomposition reaction of the organic substance occurred in the central portion of the bonding surface and by reduction reaction of the metal oxide particles can be discharged to the outside of the bonding layer through pores of the underlayer, and it is possible to prevent that the gas remains inside the bonding layer. Therefore, the semiconductor element and the circuit layer can be reliably bonded together.
  • the present invention can provide: a semiconductor device in which a circuit layer and semiconductor element are reliably bonded together using a bonding material including the organic substance and at least one or both of metal particles and metal oxide particles, and which can efficiently transmit heat generated by a semiconductor element toward the circuit layer side; a ceramic circuit substrate used in the semiconductor device; and a producing method of the semiconductor device.
  • FIG. 1 is a schematic explanatory diagram of a semiconductor device (power module) according to a first embodiment of the present invention.
  • FIG. 2 is an enlarged explanatory view of a bonding interface between a circuit layer and the semiconductor element of the semiconductor device (power module) shown in FIG. 1 .
  • FIG. 3 is an explanatory view of a ceramic circuit substrate according to the first embodiment of the present invention.
  • FIG. 4 is a flow chart explaining a producing method of the semiconductor device (power module) shown in FIG. 1 .
  • FIG. 5 is a schematic explanatory diagram of a semiconductor device (LED device) according to another embodiment of the present invention.
  • FIG. 6A is a cross-sectional photograph of an underlayer of present invention Example 1 of the present invention in Examples.
  • FIG. 6B is an image obtained by binarizing the photograph of the cross section of the underlayer of the present invention Example 1 in the Examples.
  • a semiconductor device of the present embodiment is a power module on which a power semiconductor device of high-power control that is used to control wind power and electric vehicles such as electric automobiles is mounted.
  • FIG. 1 shows a power module (semiconductor device) according to the embodiment of the present invention.
  • the power module 1 includes a ceramic circuit substrate 10 , a semiconductor element 3 , and a cooler 40 .
  • a circuit layer 12 is disposed in the ceramic circuit substrate 10 .
  • the semiconductor element 3 is bonded to the first surface of the circuit layer 12 .
  • the cooler 40 is disposed to the other surface side with respect to the ceramic circuit substrate 10 .
  • the ceramic circuit substrate 10 includes; a ceramic substrate 11 , the circuit layer 12 , and a metal layer 13 .
  • the ceramic substrate 11 constitutes an insulation layer.
  • the circuit layer 12 is disposed on one surface (upper surface in FIG. 1 ) of the ceramic substrate 11 .
  • the metal layer 13 is disposed on the other surface (lower surface in FIG. 1 ) of the ceramic substrate 11 . That is, the ceramic substrate 11 has a first surface (the one surface) and a second surface (the other surface), the circuit layer 12 is disposed on the first surface of the ceramic substrate 11 , and the metal layer 13 is disposed on the second surface of the ceramic substrate 11 .
  • the ceramic substrate 11 is for preventing electric connection between the circuit layer 12 and the metal layer 13 , and is composed of AlN (aluminum nitride), Si 3 N 4 (silicon nitride), Al 2 O 3 (alumina), or the like, having high insulation properties. In the present embodiment, it is composed of AlN which is excellent in heat dissipation properties.
  • the thickness of the ceramic substrate 11 is set to be in the range of 0.2 to 1.5 mm, and in the present embodiment, the thickness thereof is set to 0.635 mm.
  • the circuit layer 12 is formed by bonding a metal plate composed of: aluminum or an aluminum alloy having electrical conductivity; or copper or a copper alloy, on the first surface of the ceramic substrate 11 .
  • the circuit layer 12 is formed by bonding a rolled sheet of aluminum having a purity of 99.99% by mass or more (so-called 4N aluminum), to the ceramic substrate 11 .
  • the thickness of the circuit layer 12 is set to be in the range of 0.1 to 1.0 mm, and in the present embodiment it is set to 0.6 mm.
  • a circuit pattern is formed in the circuit layer 12 , and the first surface (upper surface in FIG. 1 ) of the circuit layer 12 is a bonding surface on which the semiconductor element 3 is bonded.
  • the metal layer 13 is formed by bonding a metal plate composed of: aluminum or an aluminum alloy; or copper or a copper alloy, on the second surface of the ceramic substrate 11 .
  • the metal plate (metal layer 13 ) is a rolled sheet of aluminum having a purity of 99.99% by mass or more (so-called 4N aluminum)
  • the thickness of the metal layer 13 is set to be in the range of 0.2 to 3.0 mm, and in the present embodiment, it is set to 1.6 mm.
  • the cooler 40 is for cooling the above-described ceramic circuit substrate 10 , and includes a top board 41 , a heat radiation fin(s) 42 , and flow channels 43 .
  • the top board 41 is bonded to the ceramic circuit substrate 10 .
  • the heat radiation fins 42 are vertically disposed so as to be downward from the top board 41 .
  • the flow channels 43 are provided in order to allow flowing of a cooling medium (for example, cooling water) therein.
  • the cooler 40 (including top board 41 ) is preferred to be configured by materials excellent in thermal conductivity, and in the present embodiment, it is configured by A6063 (aluminum alloy).
  • the semiconductor element 3 is configured of a semiconductor material such as Si, and in the bonding interface between the circuit layer 12 and the semiconductor element 3 , a surface treated film 3 a formed of Ni, Au, or the like, is formed.
  • an underlayer 31 and a bonding layer 38 is formed between the circuit layer 12 and the semiconductor element 3 .
  • the underlayer 31 and the bonding layer 38 are not formed on the entire surface of the circuit layer 12 , they are provided on a portion of the semiconductor device 3 , namely, they are selectively formed on the bonding surface only bonded to the semiconductor element 3 .
  • the underlayer 31 is formed on the circuit layer 12 , and the bonding layer 38 is formed on the underlayer 31 .
  • the underlayer 31 is a sintered body of a glass-containing Ag paste containing a glass component. As shown in FIG. 2 , the underlayer 31 includes a glass layer 32 , and an Ag layer 33 .
  • the glass layer 32 is formed to the circuit layer 12 side. That is, the glass layer 32 is formed on the circuit layer 12 .
  • the Ag layer 33 is formed on the glass layer 32 .
  • fine conductive particles having a particle size of several nanometers are dispersed.
  • the conductive particles in the glass layer 32 are observed by using, for example, a transmission electron microscope (TEM).
  • glass particles having a particle size of several micrometers are dispersed.
  • the electrical resistance value P in the thickness direction of the underlayer 31 is set to be 0.5 ⁇ or less.
  • the electrical resistance value P in the thickness direction of the underlayer 31 is an electrical resistance value between the upper surface of the underlayer 31 and the upper surface of the circuit layer 12 .
  • the electrical resistance value of aluminum (4N aluminum) constituting the circuit layer 12 is small as compared with the electrical resistance value in the thickness direction of the underlayer 31 .
  • a plurality of pores are formed in the underlayer 31 , and the porosity thereof is set in the range of 5 to 55%.
  • the pores formed in the underlayer 31 are continuous pores (open pores) opened to the outside, and they are configured so as to be opened to an outer circumferential surface (outer circumferential edge part of the bonding surface between the circuit layer 12 and the semiconductor element 3 ) of the underlayer 31 .
  • the glass-containing Ag paste includes Ag powder, lead-free glass powder containing ZnO, resin, a solvent, and a dispersing agent.
  • the content of the powder component formed of Ag powder and lead-free glass powder is 60 to 90% by mass of the entire content of the glass-containing Ag paste, and the balance thereof includes resin, the solvent and the dispersing agent.
  • the content of the powder component formed of Ag powder and lead-free glass powder is 85% by mass of the entire content of the glass-containing Ag paste.
  • a particle size of the Ag powder is set to be 0.05 to 10 ⁇ m.
  • the particle thereof is preferred to set to be in the range of more than 1.0 ⁇ m to 10 ⁇ m or less.
  • the shape of the Ag powder can have a spherical shape or can have a flat shape, or both shapes of them can be mixed.
  • the lead-free glass powder contains Bi 2 O 3 , ZnO, and B 2 O 3 as a major component, the glass transition temperature thereof is 300 to 450° C., a softening temperature thereof is 600° C. or less, and a crystallization temperature thereof is 450° C. or more.
  • the glass-containing Ag paste is adjusted to have the viscosity of 10 to 500 Pa ⁇ s, and more preferably, 50 to 300 Pa ⁇ s.
  • the solvent is suitable to have a boiling point of 200° C. or more, and in the present embodiment, a diethylene glycol dibutyl ether is used.
  • the resin is intended to adjust the viscosity of the glass-containing Ag paste, and the resin degraded in 500° C. or more is suitable.
  • the ethyl cellulose is used.
  • the porosity of the underlayer 31 after sintering is increased by increasing the content of the resin.
  • a dicarboxylic acid based dispersing agent is added.
  • the glass-containing Ag paste can be configured without adding the dispersing agent.
  • the above of the underlayer 31 that is, the bonding layer 38 formed on the 33 Ag layer is a sintered body of a bonding material including an organic substance and at least one or both of metal particles and metal oxide particles.
  • it is a sintered body of silver oxide paste containing silver oxide and a reducing agent including an organic substance.
  • the bonding layer 38 is an Ag sintered body in which silver oxide is reduced.
  • particles precipitated by the reduction of silver oxide have such a very fine particle size of 10 nm to 1 ⁇ m, an Ag sintered layer which is dense is formed.
  • the particle size is fine, the fine particles fill the space which is present in the silver oxide paste during the sintering, and as the result, the Ag sintered layer which is dense is formed.
  • the bonding layer 38 glass particles observed in the Ag layer 33 of the underlayer 31 does not exist, or it is very small amount.
  • the silver oxide paste configuring the bonding layer 38 includes silver oxide powder, a reducing agent, resin, and a solvent.
  • organometallic compound powder is included in addition of them.
  • the content of the silver oxide powder is 60 to 92% by mass of the entire content of silver oxide paste, the content of the reducing agent is 5 to 15% by mass of the entire content of the silver oxide paste, the content of the organometallic compound powder is 0 to 10% by mass of the entire content of silver oxide paste, and the balance is the solvent.
  • the dispersing agent and the resin are not added.
  • the reducing agent is an organic substance having reducing properties, for example, alcohols or organic acids can be used therefor.
  • Organometallic compounds have an effect of promoting the reduction reaction of silver oxide and the decomposition reaction of the organic substance by organic acids produced by thermal decomposition, and for example, formic acid Ag, acetic Ag, propionic acid Ag, benzoic acid Ag, carboxylic acid based metal salts such as oxalic acid Ag, or the like, is applied.
  • the silver oxide paste is adjusted to have the viscosity of 10 to 100 Pa ⁇ s, and more preferably, 30 to 80 Pa ⁇ s.
  • a first aluminum plate which will be the circuit layer 12 and a second aluminum plate which will be the metal layer 13 are prepared, the first aluminum plate is laminated on the first surface of the ceramic substrate 11 via a brazing material and the second aluminum plate is laminated on the second surface of the ceramic substrate 11 via a brazing material, the aluminum plates and the ceramic substrate 11 are bonding together by heating them while pressurizing and then cooling them (circuit layer and metal layer forming step S 01 ).
  • the brazing temperature is set to 640 to 650° C.
  • the cooler 40 is bonded to the other surface side of the metal layer 13 via a brazing material (cooler bonding step S 02 ).
  • the brazing temperature of the cooler 40 is set to 590 to 610° C.
  • the glass-containing Ag paste is applied on a surface of the circuit layer 12 (glass-containing Ag paste application step S 03 ).
  • the glass-containing Ag paste when applied, various methods such as screen printing method, offset printing method, and photosensitive process can be employed.
  • the glass-containing Ag paste is formed by screen printing method in a portion of the circuit layer 12 on which the semiconductor element 3 will be mounted.
  • the sintering temperature is set to 470 to 600° C. in the underlayer sintering step S 04 .
  • the underlayer 31 including the glass layer 32 and the Ag layer 33 is formed on the one surface of the circuit layer 12 .
  • an aluminum oxide film spontaneously formed on the surface of the circuit layer 12 is melted and removed by the glass layer 32 , and the glass layer 32 is formed directly on the circuit layer 12 .
  • fine conductive particles having a particle size of several nanometers are dispersed inside of the glass layer 32 .
  • the conductive particles are crystalline particles containing at least one of Al and Ag, and it is assumed that the conductive particles were deposited inside the glass layer 32 during sintering.
  • glass particles having a particle size of several micrometers are dispersed.
  • the glass particles are formed by the aggregation of the remained glass component.
  • the underlayer 31 is formed to a porous state, and the porosity thereof is set to be in the range of 5 to 55%.
  • the ceramic circuit substrate 10 of the present embodiment in which the underlayer 31 is formed on the one surface of the circuit layer 12 is produced.
  • silver oxide paste application step S 05 a silver oxide paste is applied on the surface of the underlayer 31 of the ceramic circuit substrate 10 (silver oxide paste application step S 05 ).
  • the silver oxide paste when applied, various methods such as screen printing method, offset printing method, and photosensitive process can be employed.
  • the silver oxide paste was printed by screen printing method.
  • the semiconductor element 3 is laminated on the silver oxide paste (semiconductor element stack step S 06 ).
  • the semiconductor element 3 and the ceramic circuit substrate 10 are charged into the heating furnace in a state in which they are laminated, and sintering of the silver oxide paste is performed (bonding layer sintering step S 07 ).
  • the loading pressure is set to 0 to 10 MPa, and the sintering temperature is set to 150 to 400° C.
  • the bonding layer 38 is formed on the underlayer 31 , and the semiconductor element 3 and the circuit layer 12 are bonded together. Accordingly, the power module 1 according to the present embodiment is produced.
  • the underlayer 31 having a porosity in the range of 5 to 55% is formed on the one surface of the circuit layer 12 , when the circuit layer and the semiconductor element 3 are bonded together via the bonding layer 38 composed of a sintered body of the silver oxide paste including silver oxide particles and a reducing agent, a gas generated by reduction reaction of the silver oxide and by decomposition reaction of the organic substance included in the oxide silver paste is discharged to the outside of the bonding layer through pores of the underlayer 31 , and the remaining of the gas inside the bonding layer 38 can be prevented. Therefore, the thermal resistance between the semiconductor element 3 and the circuit layer 12 can be suppressed and heat generated by the semiconductor element 3 can be efficiently transmitted to the ceramic circuit substrate 10 side.
  • a porosity of the underlayer 31 is set to 5% or more, the above-described gas can be reliably discharged and the remaining of the gas in the bonding layer 38 can be prevented.
  • a porosity of the underlayer 31 is set to 55% or less, the semiconductor element 3 and the circuit layer 12 are reliably bonded together, and the bonding reliability between the semiconductor element 3 and the circuit layer can be secured.
  • the bonding layer 38 is a sintered body of the silver oxide paste including silver oxide and the reducing agent, when the silver oxide paste is sintered, the silver oxide is reduced by the reducing agent and is formed to be fine silver particles, and the bonding layer 38 can have a dense structure. That is, the silver particles are fine, therefore fine silver particles fill the space which is present in the silver oxide paste during the sintering, and as the result, the bonding layer 38 having a dense structure is formed. Further, the reducing agent is decomposed when the silver oxide is reduced, and therefore, it is less likely to remain in the bonding layer 38 , and the conductivity and strength of the bonding layer 38 can be secured. Furthermore, since it is possible to sinter in a relatively low temperature condition, for example, 300° C., the bonding temperature of the semiconductor element 3 can be suppressed in a low temperature, and the thermal load to the semiconductor device 3 can be reduced.
  • the underlayer 31 includes the glass layer 32 formed on one surface of the circuit layer 12 , and the Ag layer 33 laminated on the glass layer 32 , the oxide film formed on the surface of circuit layer 12 can be removed by being reacted with the glass layer 32 , and the circuit layer 12 and the semiconductor element 3 can be reliably bonded together.
  • fine conductive particles having a particle size of several nanometers are dispersed inside the inner glass layer 32 , the conductivity is ensured even in the glass layer 32 , particularly, since the electrical resistance value P in the thickness direction of the underlayer 31 including the glass layer 32 is set to be 0.5 ⁇ or less, electrical continuity between the semiconductor element 3 and the circuit layer 12 through the underlayer 31 and the bonding layer 38 can be reliably obtained, and a power module 1 having high reliability can be configured.
  • the underlayer 31 having the porosity of 5 to 55% is formed by using the glass-containing Ag paste; however, it is not limited thereto.
  • the pores can be formed in the underlayer by containing beads in the paste or the pores can be formed in the underlayer by containing a foaming agent in the paste. Regardless of the process, a porosity of the underlayer has only to be set in the range of 5 to 55%.
  • the raw material of the glass-containing Ag paste and a blending amount thereof are not limited to those described in the embodiment.
  • a lead-free glass powder is used, but a glass containing lead can be used.
  • the silver oxide paste containing silver oxide is used; however, it is not limited thereto.
  • a paste including metal oxide particles or other metal particles such as gold or copper can be used.
  • the raw material of the silver oxide paste and a blending amount thereof are not limited to those described in the embodiment.
  • it can be a material which does not include organometallic compounds.
  • the silver oxide paste can contain the Ag particles in addition to the silver oxide powder and reducing agent. Ag particles are interposed between the silver oxide powder, and therefore, Ag obtained by the reduction of silver oxide and the Ag particles are sintered, and the bonding layer can have a further dense structure. Therefore, it is possible to set a lower applied pressure of the semiconductor element in the bonding process.
  • the organic substance can be included in the surface layer of the Ag particles. In this case, it is possible to improve the sinterability at a low temperature by using the heat when the organic substance is decomposed.
  • the thickness of the glass layer 32 and Ag layer 33 of the underlayer 31 and the thickness of the bonding layer 38 are not limited to the embodiment.
  • the bonding layer can contain Ag powder, resin and a solvent.
  • the paste can contain Ag powder, resin and a solvent.
  • the Ag powder is sintered during heating and a gas generated by a decomposition reaction of the organic substance such as the resin and solvent is discharged to the outside of the bonding layer through the pores of the underlayer, a dense bonding layer can be formed. That is, because the gas generated by a decomposition reaction of the organic substance such as the resin and solvent is discharged to the outside of the bonding layer through the pores of the underlayer 31 , the gas does not remain in the bonding layer, and as a result, in the bonding layer, cavities or the like due to the gas remaining in the bonding layer are never formed. Therefore, a dense bonding layer can be formed.
  • each of the circuit layer and the metal layer is composed of an aluminum plate; however, it is not limited thereto.
  • Each of the circuit layer and the metal layer can be composed of an aluminum plate or an aluminum alloy plate, or a copper plate or a copper alloy plate.
  • the present embodiment has been described in that the ceramic substrate composed of AlN is used as an insulation layer; however, it is not limited thereto.
  • a ceramic substrate composed of Si 3 N 4 , Al 2 O 3 , or the like, can be used and an insulating resin can be used as an insulation layer.
  • the present embodiment has been described in that the aluminum plate and the ceramic substrate are bonded by brazing; however, it is not limited thereto.
  • a method such as Transient Liquid Phase Diffusion Bonding method and casting method can be applied.
  • a method such as direct bonding method (DBC method), active metal brazing method and casting method can be applied.
  • DBC method direct bonding method
  • the present embodiment has been described in that after bonding the cooler along with bonding the aluminum plate used as the circuit layer to the ceramic substrate, the underlayer is formed on the circuit layer; however, it is not limited thereto. the underlayer can be formed before bonding the aluminum plate to the ceramic substrate, or before bonding the cooler.
  • the top board of the cooler is composed of aluminum; however, it can be composed of an aluminum alloy or a composite material or the like containing aluminum, or can be composed of other materials.
  • the cooler has been described in that it has the heat radiating fins and the flow channels for the cooling medium; however, there is no particular limitation on the structure of the cooler.
  • a power module on which a power semiconductor device is mounted has been described as an example of a semiconductor device; however, it is not limited thereto. It suffices that a semiconductor device that a semiconductor element is mounted on a circuit layer composed of a conductive material.
  • an LED unit semiconductor device
  • LED element semiconductor element
  • the LED unit 101 shown in FIG. 5 includes a light emitting element 103 , and a circuit layer 112 composed of a conductive material.
  • the light emitting element 103 is electrically connected to the circuit layer 112 by a bonding wire 107
  • the LED unit 101 has a structure in which the light emitting element 103 and the bonding wires 107 are sealed by a sealing material 108 .
  • an underlayer 131 having the porosity in the range of 5 to 55% is provided, and on the rear surface of the light emitting element 103 , a conductive reflective film 116 and a protective film 115 are provided.
  • a bonding layer 138 composed of a sintered body of the bonding material and an organic substance and at least one or both of metal particles and metal oxide particles are formed, and the LED unit 101 has a structure in which the circuit layer 112 and the light emitting element 103 are bonded together via the underlayer 131 and the bonding layer 138 .
  • the ceramic circuit substrate was produced by brazing an aluminum plate, which will be used as a circuit layer, on one surface of the ceramic substrate and brazing another aluminum plate, which will be used as a metal layer, on the other surface of the ceramic substrate.
  • the ceramic substrate was AlN, the size of which was 27 mm ⁇ 17 mm ⁇ 0.6 mm.
  • the aluminum plate, which will be used as a circuit layer was 4N aluminum having a purity of 99.99% by mass or more, and the size of which was 25 mm ⁇ 15 mm ⁇ 0.6 mm.
  • the aluminum plate, which will be used as a metal layer was 4N aluminum having a purity of 99.99% by mass or more, and the size of which was 25 mm ⁇ 15 mm ⁇ 1.6 mm.
  • the semiconductor element having a size of 13 mm ⁇ 10 mm ⁇ 0.25 mm was used.
  • the underlayer was formed on the aluminum plate by screen printing method.
  • the application thickness of glass-containing Ag paste was 10 ⁇ m.
  • FIG. 6A shows a cross-sectional observation photograph of the present invention Example 1
  • the semiconductor element and the circuit layer were bonded together.
  • the application thickness of the silver oxide paste was 50 ⁇ m
  • the sintering conditions were 300° C. of a sintering temperature, 10 minutes of a sintering time, 3 MPa of a load pressure.
  • the various semiconductor devices were produced.
  • the bonding rate was evaluated using an ultrasonic flaw detection device and was calculated using the expression shown below.
  • the initial bonding rate was 70%. It is presumed that a gas was generated during sintering of the silver oxide paste remains in the bonding layer and voids were generated.
  • the initial bonding rate was 90% or more and was high, and the thermal resistance was lowered as compared with the Conventional Example.
  • the present invention can provide: a semiconductor device in which a circuit layer and semiconductor element are reliably bonded together using a bonding material including the organic substance and at least one or both of metal particles and metal oxide particles, and which can efficiently transmit heat generated by a semiconductor element toward the circuit layer side; a ceramic circuit substrate used in the semiconductor device; and a producing method of the semiconductor device.

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