IN2015DN02878A - - Google Patents

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Publication number
IN2015DN02878A
IN2015DN02878A IN2878DEN2015A IN2015DN02878A IN 2015DN02878 A IN2015DN02878 A IN 2015DN02878A IN 2878DEN2015 A IN2878DEN2015 A IN 2878DEN2015A IN 2015DN02878 A IN2015DN02878 A IN 2015DN02878A
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IN
India
Prior art keywords
layer
bonding
circuit layer
circuit
semiconductor element
Prior art date
Application number
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English (en)
Inventor
Shuji Nishimoto
Yoshiyuki Nagatomo
Toshiyuki Nagase
Original Assignee
Mitsubishi Materials Corp
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Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2015DN02878A publication Critical patent/IN2015DN02878A/en

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    • C04B37/02Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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JP6565527B2 (ja) * 2014-09-30 2019-08-28 三菱マテリアル株式会社 Ag下地層付パワーモジュール用基板及びパワーモジュール
JP6276424B2 (ja) * 2014-12-16 2018-02-07 京セラ株式会社 回路基板および電子装置
JP6481409B2 (ja) * 2015-02-19 2019-03-13 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
JP6613929B2 (ja) * 2016-02-01 2019-12-04 三菱マテリアル株式会社 Ag下地層付き金属部材、Ag下地層付き絶縁回路基板、半導体装置、ヒートシンク付き絶縁回路基板、及び、Ag下地層付き金属部材の製造方法
JP6677886B2 (ja) * 2016-02-29 2020-04-08 三菱マテリアル株式会社 半導体装置
US9905532B2 (en) 2016-03-09 2018-02-27 Toyota Motor Engineering & Manufacturing North America, Inc. Methods and apparatuses for high temperature bonding and bonded substrates having variable porosity distribution formed therefrom
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