TWI609462B - 半導體裝置，陶瓷電路基板及半導體裝置的製造方法 - Google Patents

半導體裝置，陶瓷電路基板及半導體裝置的製造方法 Download PDF

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TWI609462B
TWI609462B TW102136018A TW102136018A TWI609462B TW I609462 B TWI609462 B TW I609462B TW 102136018 A TW102136018 A TW 102136018A TW 102136018 A TW102136018 A TW 102136018A TW I609462 B TWI609462 B TW I609462B
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layer
circuit layer
underlayer
bonding
circuit
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TW102136018A
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TW201421618A (zh
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西元修司
長友義幸
長瀬敏之
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三菱綜合材料股份有限公司
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Description

半導體裝置，陶瓷電路基板及半導體裝置的製造方法
本發明是有關具備由導電性材料所構成的電路層及被搭載於此電路層上的半導體元件之半導體裝置，及使用在此半導體裝置的陶瓷電路基板，以及半導體裝置的製造方法。
本案是根據2012年10月09日申請日本特願2012-224257號主張優先權，且將其內容援用於此。
在LED或功率模組等的半導體裝置中，是設為在由導電材料所構成的電路層之上接合半導體元件的構造。
例如，用以控制風力發電、電動汽車等的電動車輛等之大電力控制用的功率半導體元件因為發熱量多，所以予以搭載的基板例如以往廣泛使用在由AlN(氮化鋁)等所構成的陶瓷基板上接合導電性佳的金屬板作為電路層的陶瓷電路基板。
例如，在專利文獻1所示的功率模組中，是設為具備：在陶瓷基板的一方的面形成有由金屬所構成的電路層的陶瓷電路基板，及被接合於此電路層上的半導體元件之構造。而且，設為在陶瓷電路基板的另一方側接合放熱板，將在半導體元件產生的熱傳達至陶瓷電路基板側，經由放熱板來擴散至外部之構成。
在此，在將半導體元件等的電子零件接合於電路層上時，例如專利文獻1所示般，利用焊錫材的方法廣泛被使用。最近，基於環境保護的觀點，例如Sn-Ag系，Sn-In系或Sn-Ag-Cu系等的無鉛焊錫成為主流。
可是，如專利文獻1所記載般，經由焊錫材來接合半導體元件等的電子零件與電路層時，在高溫環境下使用時焊錫的一部分會溶融，恐有半導體元件等的電子零件與電路層接合可靠度降低之虞。
特別是最近由矽半導體期待SiC或GaN等化合物半導體元件的實用化，可預料半導體元件本身的耐熱性的提升，因此像以往那樣以焊錫材來接合的構造是難以對應。
於是，作為焊錫材的替代，例如在專利文獻2是提案利用具有金屬粒子及有機物的金屬糊來接合半導體元件的技術。
並且，在專利文獻3、4是提案利用含金屬氧化物粒子及由有機物所構成的還原劑之氧化物糊來將半導體元件等的電子零件接合於電路上的技術。
在專利文獻2所記載的金屬糊中是含有金屬粒子及有 機物，在金屬粒子燒結下，形成由導電性的燒成體所構成的接合層，經由此接合層來將半導體元件等的電子零件接合於電路層上。
另一方面，在專利文獻3，4所記載的氧化物糊中是金屬氧化物粒子會藉由還原劑來還原，在藉此生成的金屬粒子燒結下，形成由導電性的燒成體所構成的接合層，經由此接合層來將半導體元件等的電子零件接合於電路層上。
如此，藉由金屬粒子的燒成體來形成接合層時，可在比較低溫條件下形成接合層，且因為接合層本身的融點高，所以即使在高溫環境下，接合強度也不會大幅度降低。
[先行技術文獻] [專利文獻]
[專利文獻1]日本特開2004-172378號公報
[專利文獻2]日本特開2006-202938號公報
[專利文獻3]日本特開2008-208442號公報
[專利文獻4]日本特開2009-267374號公報
可是，如專利文獻2所記載般，在燒成具有金屬粒子及有機物的金屬糊時，藉由有機物的分解反應而 產生氣體。
並且，如專利文獻3，4所記載般，在燒結含金屬氧化物粒子及由有機物所構成的還原劑之氧化物糊時，除了有機物的分解反應外，還藉由金屬氧化物粒子的還原反應來產生氣體。
在此，於上述的功率模組中，藉由金屬糊或氧化物糊來接合半導體元件與電路層時，金屬糊或氧化物糊的燒結會有因為溫度的不均一性等而從半導體元件與電路層的接合面的周緣部往中央部進展的情形。此情況，在接合面的中央部金屬糊或氧化物糊燒結的時間點是接合面的周緣部的燒結完了，在接合面的中央部產生之有機物的分解反應或金屬氧化物粒子的還原反應所產生的氣體會殘留於接合層內部，恐有無法確保半導體元件與電路層的接合強度之虞。因此，半導體元件與電路層之間的熱阻會變大，恐有無法將從半導體元件產生的熱予以效率佳地傳達至電路層側之虞。
如此的問題是不僅上述的功率模組，在LED等其他的半導體裝置中也同樣。
本發明是有鑑於前述的情事而研發者，其目的是在於提供一種電路層與半導體元件會利用含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材來確實地接合，可將來自半導體元件的熱予以效率佳地傳達至電路層側之半導體裝置，及使用在此半導體裝置的陶瓷電路基板、以及半導體裝置的製造方法。
(1)本發明之一形態的半導體裝置，係具備：由導電性材料所構成的電路層、及被搭載於前述電路層上的半導體元件，其特徵為：在前述電路層的一方的面係形成有氣孔率為5%以上55%以下的範圍內之底層，在此底層之上形成有由含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材的燒成體所構成的接合層，前述電路層與前述半導體元件係經由前述底層及前述接合層來接合。
若根據此構成的半導體裝置，則由於在電路層的一方的面形成有氣孔率為5%以上55%以下的範圍內的底層，因此在形成由含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材的燒成體所構成的接合層時，即使燒結從半導體元件與電路層的接合面的周緣部往中央部進展，在接合面的中央部產生之有機物的分解反應或金屬氧化物粒子的還原反應所產生的氣體還是可經由底層的氣孔來排出至外部，氣體不會殘留於接合層內。因此，可抑制半導體元件與電路層之間的熱阻，可將從半導體元件產生的熱予以效率佳地傳達至電路層側。
另外，當底層的氣孔率未滿5%時，無法效率佳地排出氣體，恐有氣體殘留於接合層內之虞。另一方 面，若底層的氣孔率超過55%，則氣孔會過多，恐有半導體元件與電路層的接合可靠度降低之虞。
基於以上的情形，在本發明中是將底層的氣孔率設定於5%以上55%未滿的範圍內。
(2)本發明之其他形態的半導體裝置，如(1)所記載的半導體裝置，其中，具備陶瓷電路基板，其係具有：前述電路層，及被配設於前述電路層的另一方的面之陶瓷基板，前述半導體元件為功率半導體元件。
若根據此構成的半導體裝置，則即使在使用發熱量多的功率半導體元件時，還是可有效率地將熱傳達至電路層。另外，功率半導體是可舉IGBT(Insulated Gate Bipolar Transistor)或MOSFET等。
(3)本發明之其他形態的陶瓷電路基板，係使用(2)所記載的半導體裝置之陶瓷電路基板，其特徵為：具有：由導電性材料所構成的電路層，及被形成於前述電路層的一方的面的底層、及被配設於前述電路層的另一方的面的陶瓷基板，前述底層係氣孔率為5%以上55%以下的範圍內。
若根據此構成的陶瓷電路基板，則由於在電路層的一方的面形成有氣孔率為5%以上55%以下的範圍內的底層，因此即使在利用含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材來接合半導體元件於電路層上時，還是可經由底層的氣孔來將從接合材產生之 有機物的分解反應或金屬氧化物的還原反應所產生的氣體排出至外部，可抑制氣體殘留於由接合材的燒成體所構成的接合層內，可確實地接合半導體元件。
(4)本發明之其他形態的半導體裝置的製造方法，係於(1)或(2)所記載的半導體裝置之製造方法，其特徵係具備：底層形成工程，其係於前述電路層的一方的面形成氣孔率為5%以上55%以下的範圍內的底層；接合材配設工程，其係於前述底層之上配設含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材；半導體元件層疊工程，其係於前述接合材之上層疊前述半導體元件；及燒成工程，其係於層疊前述半導體元件、前述接合材、前述底層及前述電路層的狀態下加熱，而於前述底層之上形成由含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材的燒成體所構成的接合層，使前述電路層與前述半導體元件經由前述底層及前述接合層來接合。
若根據此構成的半導體裝置的製造方法，則由於具備：在電路層的一方的面形成氣孔率為5%以上55%以下的範圍內的底層之底層形成工程，及在此底層之上形成由含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材的燒成體所構成的接合層之燒成工程， 因此在燒成工程中，即使燒結從半導體元件與電路層的接合面的周緣部往中央部進展，還是可經由底層的氣孔來將在接合面的中央部產生之有機物的分解反應或金屬氧化物的還原反應所產生的氣體排出至外部，可抑制氣體殘留於由接合材的燒成體所構成的接合層內。藉此，可確實地接合半導體元件與電路層。
若根據本發明，則可提供一種電路層與半導體元件會利用含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材來確實地接合，可將來自半導體元件的熱予以效率佳地傳達至電路層側之半導體裝置，及使用在此半導體裝置的陶瓷電路基板，以及半導體裝置的製造方法。
1‧‧‧功率模組(半導體裝置)
3‧‧‧半導體元件
10‧‧‧陶瓷電路基板
11‧‧‧陶瓷基板(絕緣層)
12‧‧‧電路層
31‧‧‧底層
38‧‧‧接合層
101‧‧‧LED裝置(半導體裝置)
103‧‧‧發光元件(半導體元件)
112‧‧‧電路層
131‧‧‧底層
138‧‧‧接合層
圖1是本發明之一實施形態的半導體裝置(功率模組)的概略說明圖。
圖2是圖1所示的半導體裝置(功率模組)的電路層與半導體元件的接合界面的擴大說明圖。
圖3是本發明之一實施形態的陶瓷電路基板的說明圖。
圖4是表示圖1所示的半導體裝置(功率模組)的製造 方法的流程圖。
圖5是本發明的其他實施形態的半導體裝置(LED裝置)的概略說明圖。
圖6A是實施例之本發明例1的底層的剖面照片。
圖6B是將實施例之本發明例1的底層的剖面照片2值化處理的畫像。
以下，參照附圖來說明有關本發明的實施形態。另外，本實施形態的半導體裝置是搭載有用以控制風力發電、電動汽車等的電動車輛等之大電力控制用的功率半導體元件的功率模組。在圖1顯示本發明的實施形態之功率模組(半導體裝置)。
此功率模組1是具備陶瓷電路基板10、半導體元件3及冷卻器40。在陶瓷電路基板10是配設有電路層12。半導體元件3是在電路層12的第一面(一方的面，亦即在圖1中上面)及第二面(另一方的面，亦即在圖1中下面)之中接合於第一面。冷卻器40是被配設在陶瓷電路基板10的另一方側。
陶瓷電路基板10是如圖1所示般具備陶瓷基板11、電路層12及金屬層13。陶瓷基板11是構成絕緣層。電路層12是被配設在此陶瓷基板11的一方的面(在圖1中上面)。金屬層13是被配設於陶瓷基板11的另一方的面(在圖1中下面)。亦即，陶瓷基板11是具有第一 面(一方的面)及第二面(另一方的面)，在陶瓷基板11的第一面是配設有電路層12，在陶瓷基板11的第二面是配設有金屬層13。
陶瓷基板11是防止電路層12與金屬層13之間的電性連接者，以絕緣性高的AlN(氮化鋁)，Si3N4(氮化矽)，Al2O3(氧化鋁)等所構成。在本實施形態中是以放熱性佳的AlN(氮化鋁)所構成。並且，陶瓷基板11的厚度是設定在0.2~1.5mm的範圍內，在本實施形態中是設定於0.635mm。
電路層12是在陶瓷基板11的一方的面，藉由接合具有導電性的鋁或鋁合金、銅或銅合金的金屬板來形成。在本實施形態中，電路層12是藉由接合純度99.99質量%以上的鋁(所謂4N鋁)的壓延板來形成。另外，電路層12的厚度是設定在0.1mm以上1.0mm以下的範圍內，本實施形態是設定於0.6mm。並且，在此電路層12是形成有電路圖案，其一方的面(在圖1中上面)會成為接合半導體元件3的接合面。
金屬層13是在陶瓷基板11的另一方的面，藉由接合鋁或鋁合金、銅或銅合金等的金屬板來形成。在本實施形態中，此金屬板(金屬層13)是純度為99.99質量%以上的鋁(所謂4N鋁)的壓延板。在此，金屬層13的厚度是設定在0.2mm以上3.0mm以下的範圍內，本實施形態是設定於1.6mm。
冷卻器40是以冷卻前述的陶瓷電路基板10 者，具備頂板部41、放熱鰭片42及流路43。頂板部41是與陶瓷電路基板10接合。放熱鰭片42是由此頂板部41朝下方垂設。流路43是為了使冷卻媒體(例如冷卻水)流通而設。此冷卻器40(頂板部41)最好是以熱傳導性良好的材質所構成，在本實施形態中是以A6063(鋁合金)所構成。
半導體元件3是以Si等的半導體材料所構成，在與電路層12的接合面是形成有由Ni、Au等所構成的表面處理膜3a。
而且，在圖1所示的功率模組1中，是在電路層12與半導體元件3之間形成有底層31及接合層38。
另外，底層31及接合層38是如圖1所示般，未被形成於電路層12的表面全體，只在配設有半導體元件3的部分，亦即與半導體元件3的接合面選擇性地形成。
如圖1所示般，底層31是被形成於電路層12上，接合層38是被形成於此底層31上。
在此，底層31是含玻璃成分之含玻璃Ag糊的燒成體。此底層31是如圖2所示般，具備玻璃層32及Ag層33。玻璃層32是被形成於電路層12側。亦即，玻璃層32是被形成於電路層12上。Ag層33是被形成於此玻璃層32上。
在玻璃層32內部是分散有粒徑為數奈米程度的微細的導電性粒子。另外，玻璃層32內的導電性粒子是例如 藉由使用透過型電子顯微鏡(TEM)來觀察。
並且，在Ag層33的內部是分散有粒徑數微米程度的玻璃粒子。
另外，此底層31的厚度方向的電阻值P為0.5Ω以下。在此，本實施形態中，底層31的厚度方向的電阻值P是底層31的上面與電路層12的上面之間的電阻值。這是因為構成電路層12的鋁(4N鋁)的電阻相較於底層31的厚度方向的電阻非常小。另外，在此電阻的測定時，是測定底層31的上面中央點與和從底層31的前述上面中央點到底層31端部的距離同距離離開底層31端部之電路層12上的點之間的電阻。
而且，在本實施形態中，在此底層31形成有複數的氣孔，氣孔率是被設定於5%以上55%以下的範圍內。
另外，形成於此底層31的氣孔是成為開口至外部的連續氣孔(open pore)，構成在底層31的外周面(電路層12與半導體元件3的接合面的外周緣部分)開口。
其次，說明有關構成底層31之含玻璃Ag糊。此含玻璃Ag糊是含有：Ag粉末、含有ZnO的無鉛玻璃粉末、樹脂、溶劑及分散劑，由Ag粉末及無鉛玻璃粉末所構成的粉末成分的含有量是含玻璃Ag糊全體的60質量%以上90質量%以下，剩下部分是樹脂，溶劑，分散劑。另外，在本實施形態中，由Ag粉末及無鉛玻璃粉末所構成的粉末成分的含有量是含玻璃Ag糊全體的85質量 %。
在此，Ag粉末是其粒徑為0.05μm以上10μm以下。另外，Ag粉末的粒徑越大，所被形成的底層31的氣孔率會有容易變高的傾向，因此設定於超過1.0μm，10μm以下的範圍內為理想。並且，Ag粉末的形狀是亦可為球形，或形成偏平形狀，或將該等混合者。
並且，無鉛玻璃粉末主成分是含Bi2O3，ZnO，B2O3者，其玻璃轉移溫度為300℃以上450℃以下，軟化溫度為600℃以下，結晶化溫度為450℃以上。
又，此含玻璃Ag糊是其黏度為10Pa．s以上500Pa．s以下，更理想是被調整於50Pa．s以上300Pa．s以下。
溶劑是沸點為200℃以上者合適，在本實施形態是使用二乙二醇二丁醚。
樹脂是調整含玻璃Ag糊的黏度者，在500℃以上被分解者合適。在本實施形態是使用乙基纖維素。另外，藉由使樹脂的含有量增加，燒成後的底層31的氣孔率有變高的傾向。
並且，在本實施形態是添加二羧酸系的分散劑。另外，亦可不添加分散劑來構成含玻璃Ag糊。
此底層31之上，亦即Ag層33之上所形成的接合層38是含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材的燒成體，在本實施形態是含氧化銀及由有機物所構成的還原劑之氧化銀糊的燒成體。亦即，接合層38是氧化銀所被還原的Ag的燒成體。在此， 藉由還原氧化銀所析出的粒子是例如粒徑10nm~1μm非常微細，因此形成緻密的Ag的燒成層。亦即，粒徑微細，藉此在燒成時該微細的粒子會填埋氧化銀糊內所存在的空間，其結果，形成緻密的Ag的燒成層。另外，在此接合層38中是在底層31的Ag層33所被觀察的玻璃粒子不存在或非常少。
構成此接合層38的氧化銀糊是含有氧化銀粉末、還原劑、樹脂及溶劑，在本實施形態中是除了該等外還含有有機金屬化合物粉末。
氧化銀粉末的含有量為氧化銀糊全體的60質量%以上92質量%以下，還原劑的含有量為氧化銀糊全體的5質量%以上15質量%以下，有機金屬化合物粉末的含有量為氧化銀糊全體的0質量%以上10質量%以下，剩下部分是溶劑。在此氧化銀糊中，為了抑制在藉由燒結所取得的接合層38中殘留未反應的有機物，最好分散劑及樹脂不添加。
還原劑是具有還原性的有機物，例如可使用乙醇，有機酸。
有機金屬化合物是具有利用藉由熱分解所生成的有機酸來使氧化銀的還原反應或有機物的分解反應促進的作用，例如適用甲酸Ag、醋酸Ag、丙酸Ag、苯甲酸Ag、草酸Ag等的碳素酸系金屬鹽等。
另外，此氧化銀糊是其黏度為10Pa．s以上100Pa．s以下，更理想是被調整於30Pa．s以上80Pa．s以下。
以下，參照圖4所示的流程圖來說明有關本實施形態之功率模組1的製造方法。
首先，準備成為電路層12的鋁板及成為金屬層13的鋁板，使該等的鋁板在陶瓷基板11的一方的面及另一方的面分別經由硬焊材來層疊、加壓．加熱後冷卻，藉此接合前述鋁板與陶瓷基板11(電路層及金屬層形成工程S01)。另外，此硬焊(brazing)的溫度是被設定於640℃~650℃。
其次，在金屬層13的另一方的面側，經由硬焊材來接合冷卻器40(冷卻器接合工程S02)。另外，冷卻器40的硬焊的溫度是被設定於590℃~610℃。
然後，在電路層12的表面塗佈含玻璃Ag糊(含玻璃Ag糊塗佈工程S03)。
另外，在塗佈含玻璃Ag糊時，可採用網版印刷法，膠印法(offset printing)，感光性製程等各種的手段。本實施形態是藉由網版印刷法來將含玻璃Ag糊形成於電路層12之搭載有半導體元件3的部分。
其次，在電路層12表面塗佈含玻璃Ag糊的狀態下乾燥後，裝入加熱爐內進行含玻璃Ag糊的燒成(底層燒成工程S04)。另外，一旦燒成溫度低，則會有氣孔率變高的傾向，因此本實施形態是將底層燒成工程S04的燒成溫度設定於470~600℃。
藉由此底層燒成工程S04，在電路層12的一方的面形成具備玻璃層32及Ag層33的底層31。此時，藉由玻 璃層32，在電路層12的表面自然產生的鋁氧化皮膜會被溶融除去，在電路層12直接形成玻璃層32。
並且，在玻璃層32的內部分散有粒徑為數奈米程度的微細的導電性粒子。此導電性粒子是含有Ag或Al的至少一方的結晶性粒子，可推測在燒成時析出於玻璃層32內部。
而且，在Ag層33的內部分散有粒徑為數微米程度的玻璃粒子。可推測此玻璃粒子是在Ag粒子的燒結進展的過程，殘留的玻璃成分凝集者。
而且，在本實施形態中，將Ag粉末的粒徑形成比較大，將燒成溫度設定於比較低溫，藉此底層31會成為多孔的狀態，其氣孔率是被設定於5%以上55%以下的範圍內。
如此一來，如圖3所示般，在電路層12的一方的面形成底層31的本實施形態之陶瓷電路基板10會被製造。
其次，在陶瓷電路基板10的底層31的表面塗佈氧化銀糊(氧化銀糊塗佈工程S05)。
另外，在塗佈氧化銀糊時，可採用網版印刷法、膠印法、感光性製程等的各種手段。在本實施形態是藉由網版印刷法來印刷氧化銀糊。
其次，在塗佈氧化銀糊的狀態下乾燥(例如在室溫、大氣環境下保管24小時)之後，在氧化銀糊之上層疊半導體元件3(半導體元件層疊工程S06)。
然後，在層疊半導體元件3及陶瓷電路基板10的狀 態下裝入加熱爐內，進行氧化銀糊的燒成(接合層燒成工程S07)。此時，將荷重設為0~10MPa，將燒成溫度設為150~400℃。
並且，最好是將半導體元件3及陶瓷電路基板10加壓於層疊方向的狀態下加熱，藉此可更確實地接合。
如此一來，在底層31之上形成接合層38，接合半導體元件3與電路層12。藉此，製造本實施形態之功率模組1。
若根據以上那樣構成的本實施形態之功率模組、陶瓷電路基板，則由於在電路層12的一方的面形成有氣孔率為5%以上55%以下的範圍內的底層31，因此在經由含氧化銀粒子及還原劑的氧化銀糊的燒成體所構成的接合層38來接合電路層與半導體元件時，氧化銀的還原反應或氧化銀糊中所含的有機物的分解反應所產生的氣體會經由底層31的氣孔來排出至外部，可抑制氣體殘留於接合層38內。藉此，可壓低半導體元件3與電路層12之間的熱阻，可將從半導體元件3產生的熱予以效率佳地傳達至陶瓷電路基板10側。
在本實施形態中，由於底層31的氣孔率被設定於5%以上，因此可確實地排出上述的氣體，可抑制氣體殘留於接合層38內。又，由於底層31的氣孔率是被設定於55%以下，因此半導體元件3與電路層12會被確實地接合，可確保半導體元件3與電路層的接合可靠度。
並且，在本實施形態中，接合層38是含氧化 銀及還原劑的氧化銀糊的燒成體，因此在燒成氧化銀糊時，氧化銀會藉還原劑而還原成為微細的銀粒子，可使接合層38成為緻密的構造。亦即，銀粒子微細，燒成時微細的銀粒子會填埋氧化銀糊內所存在的空間，其結果，可形成具有緻密的構造之接合層38。又，由於還原劑是在還原氧化銀時被分解，因此不易殘留於接合層38中，可確保接合層38的導電性及強度。而且，可例如以300℃之比較低溫的條件來燒成，因此可壓低半導體元件3的接合溫度，進而能夠降低對半導體元件3的熱負荷。
而且，在本實施形態中，由於底層31具備：被形成於電路層12的一方的面的玻璃層32，及被層疊於此玻璃層32上的Ag層33，因此可使被形成於電路層12的表面之氧化皮膜在玻璃層32反應而除去，可確實地接合電路層12與半導體元件3。
而且，在本實施形態中，玻璃層32內部分散有粒徑為數奈米程度的微細的導電性粒子，即使在玻璃層32中也會確保導電性，具體而言，包含玻璃層32的底層31的厚度方向的電阻值P是被設定於0.5Ω以下，因此可經由底層31及接合層38在半導體元件3與電路層12之間確實地導通電氣，可構成可靠度高的功率模組1。
以上，說明有關本發明的實施形態，但本發明並非限於此，亦可在不脫離其發明的技術思想的範圍內作適當變更。
例如，在本實施形態中是說明利用含玻璃Ag糊來形 成氣孔率為5%以上55%以下的底層31，但並非限於此，亦可使串珠含於糊內而在底層形成氣孔，或使發泡劑含於糊內而在底層形成氣孔。製法不拘，只要底層的氣孔率被設定於5%以上55%以下的範圍內即可。
並且，有關含玻璃Ag糊的原料，配合量並非限於實施形態所記載者。例如，雖是說明使用無鉛玻璃粉末者，但亦可為含有鉛的玻璃。
而且，說明形成接合層的接合材為使用含氧化銀的氧化銀糊，但並非限於此，亦可為含金或銅等其他金屬粒子或金屬氧化物粒子的糊。
並且，有關氧化銀糊的原料、配合量並非限於實施形態所記載。例如亦可為不含有機金屬化合物者。
而且，氧化銀糊是除了氧化銀粉末及還原劑外，亦可含有Ag粒子。藉由Ag粒子介於氧化銀粉末之間，氧化銀被還原而取得的Ag與該Ag粒子會燒結，可使接合層成為更緻密的構造。藉此，可降低設定接合時的半導體元件的加壓壓力。
並且，亦可在此Ag粒子的表層含有機物。此情況，可利用有機物分解時的熱來使在低溫的燒結性提升。
而且，有關底層31的玻璃層32及Ag層33的厚度，接合層38的厚度也不限於本實施形態。
並且，亦可以含Ag粉末的糊來形成接合層。此糊是可由Ag粉末、樹脂及溶劑所構成。此情況，加熱時Ag粉末會燒結，且樹脂或溶劑等的有機物的分解反應 所產生的氣體會經由底層的氣孔來排出至外部，藉此可形成緻密的接合層。亦即，樹脂或溶劑等的有機物的分解反應所產生的氣體會經由底層31的氣孔來排出至外面，不會殘留於接合層內，其結果，在接合層內不會有因接合層內的氣體的殘留所造成空洞等的情形。因此，可形成緻密的接合層。
並且，在本實施形態中是說明以鋁板來構成電路層及金屬層者，但並非限於此，電路層及金屬層是亦可以鋁板或鋁合金板、銅板或銅合金板所構成。
而且，說明使用由AlN所構成的陶瓷基板作為絕緣層，但並非限於此，亦可使用由Si3N4或Al2O3等所構成的陶瓷基板，或藉由絕緣樹脂來構成絕緣層。
並且，說明以硬焊來接合鋁板與陶瓷基板，但並非限於此，亦可適用過渡液相接合法(Transient Liquid Phase Bonding)，鑄造法等。
另外，在將構成電路層及金屬層的金屬板以銅或銅合金來構成時，使銅或銅合金所構成的金屬板接合於陶瓷基板時，可適用直接接合法(DBC法)，活性金屬硬焊法，鑄造法等。
並且，說明將成為電路層的鋁板接合於陶瓷基板，且在接合冷卻器之後，於電路層上形成底層者，但並非限於此，亦可在將鋁板接合於陶瓷基板之前或接合冷卻器之前形成底層。
而且，說明以鋁來構成冷卻器的頂板部，但 亦可以鋁合金或含鋁的複合材等來構成，或以其他的材料來構成。並且，說明冷卻器為具有放熱鰭片及冷卻媒體的流路者，但冷卻器的構造並無特別加以限定。
並且，在本實施形態中，半導體裝置是舉搭載有功率半導體元件的功率模組為例進行說明，但並非限於此，只要是在由導電性材料所構成的電路層上搭載半導體元件的半導體裝置即可。
例如圖5所示般，亦可為搭載LED元件(半導體元件)的LED裝置(半導體裝置)。
圖5所示的LED裝置101是具備：發光元件103，及由導電性材料所構成的電路層112。另外，發光元件103是藉由接合線107來與電路層112電性連接，發光元件103及接合線107是藉由密封材108來密封之構造。在電路層112的一方的面是設有氣孔率為5%以上55%以下的範圍內的底層131，在發光元件103的背面是設有導電性反射膜116及保護膜115。而且，在底層131之上形成有由含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材的燒成體所構成的接合層138，發光元件103與電路層112是經由底層131及接合層138來接合的構造。
在如此的LED裝置101中，也是在電路層112的一方的面設有氣孔率為5%以上55%以下的範圍內的底層131，因此可將有機物的分解反應或金屬氧化物粒子的還原反應所產生的氣體經由底層131的氣孔來排出至外部， 可抑制氣體殘留於接合層138內。
[實施例]
以下說明有關為了確認本發明的效果而進行的確認實驗的結果。
利用其次所示的陶瓷電路基板，變更底層的氣孔率，製作各種半導體裝置(功率模組)。
陶瓷電路基板是在陶瓷基板的一方的面硬焊接合電路層，在另一方的面硬焊接合成為金屬層的鋁板而製作。在此，陶瓷基板是AlN，尺寸是設為27mm×17mm×0.6mm。成為電路層的鋁板是純度99.99質量%以上的4N鋁，尺寸是設為25mm×15mm×0.6mm。成為金屬層的鋁板是純度99.99%以上的4N鋁，尺寸是設為25mm×15mm×1.6mm。
半導體元件的尺寸是使用13mm×10mm×0.25mm者。
利用在實施形態所例示的含玻璃Ag糊，藉由網版印刷在鋁板上形成底層。另外，將含玻璃Ag糊的塗佈厚度設為10μm。
在此，將含玻璃Ag糊中所含的Ag粉末的形狀、粒徑、含玻璃Ag糊的燒成條件調整成表1所示般。
針對上述那樣形成的底層的氣孔率來如以下般評價。
將所取得的陶瓷電路基板切斷，機械研磨底層的剖面 之後，進行Ar離子蝕刻(日本電子株式會社製“Cross section polisher”SM-09010)，使用雷射顯微鏡(KEYENCE CORPORATION製VK X-200)來實施剖面觀察。
然後，將所取得的畫像予以2值化處理，將白色部設為Ag及玻璃，黑色部設為氣孔。另外，將本發明例1的剖面觀察照片顯示於圖6A，且將此剖面觀察照片2值化處理後的畫像顯示於圖6B。由2值化後的畫像來求取黑色部的面積，用以下所示的式子來算出氣孔率。在5處的剖面測定，算術平均各剖面的氣孔率而作為底層的氣孔率。將結果顯示於表1。
氣孔率=黑色部(氣孔)面積/底層的全體面積
利用在實施形態所例示的氧化銀糊來接合半導體元件與電路層。另外，將氧化銀糊的塗佈厚度設為50μm，燒成條件是將燒成溫度設為300℃，將燒成時間設為10分鐘，將荷重設為3MPa。藉此，製造出各種半導體裝置。
針對所取得的各種半導體裝置來評價初期接合率、熱阻。
接合率是利用超音波探傷裝置來評價，由以下的式子來算出。在此，所謂初期接合面積是接合前之應接合的面積，亦即半導體元件面積。在超音波探傷像中，非接合部分是以接合部內的白色部來表示，因此將該白色部的面積設為非接合面積。
接合率=(初期接合面積-非接合面積)/初期接合面積
熱阻是如其次般測定。使用加熱器晶片作為半導體元件，製作半導體裝置，將該等的半導體裝置硬焊接合於冷卻器。其次，以100W的電力來將加熱器晶片加熱，利用熱電偶來實測加熱器晶片的溫度。並且，實測流通於冷卻器的冷卻媒體(乙二醇：水=9：1)的溫度。然後，將以電力來除加熱器晶片的溫度與冷卻媒體的溫度差的值作為熱阻。
另外，以底層的氣孔率為2%的以往例作為基準1，以和此以往例的比率作評價。將評價結果顯示於表1。
在底層的氣孔率為2%的以往例中，初期接合率為70%。可推測是因為在氧化銀糊的燒成時產生的氣體殘留於接合層內，產生空隙(void)所致。
另一方面，在底層的氣孔率為68%的比較例中，初期接合率是88%，比以往例高，但熱阻會比以往例高。這可推測是因為在底層存在較多的氣孔，所以無法將來自半導體元件的熱效率佳地傳達至電路層側。
相對於此，在底層的氣孔率被設定於5%以上55%以下的範圍內的本發明例1-9中，初期接合率較高，為90%以上，熱阻也比以往例低。
由以上的情形確認，若根據本發明例，則可取得一種電路層與半導體元件被確實地接合，可將來自半導體元件的熱予以效率佳地傳達至電路層側之半導體裝置。
[產業上的利用可能性]
若根據本發明，則可提供一種電路層與半導體元件會藉由含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材來確實地接合，可將來自半導體元件的熱予以效率佳地傳達至電路層側之半導體裝置，及使用在此半導體裝置的陶瓷電路基板，以及半導體裝置的製造方法。
1‧‧‧功率模組(半導體裝置)
3‧‧‧半導體元件
3a‧‧‧表面處理膜
10‧‧‧陶瓷電路基板
11‧‧‧陶瓷基板(絕緣層)
12‧‧‧電路層
13‧‧‧金屬層
31‧‧‧底層
38‧‧‧接合層
40‧‧‧冷卻器
41‧‧‧頂板部
42‧‧‧放熱鰭片
43‧‧‧流路

Claims (4)

  1. 一種半導體裝置，係具備：由導電性材料所構成的電路層、及被搭載於前述電路層上的半導體元件，其特徵為：在前述電路層的一方的面係形成有氣孔率為5%以上55%以下的範圍內之底層，前述底層係具備：被形成於前述電路層側的玻璃層、及被形成於此玻璃層上的Ag層，在此底層之上形成有由含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材的燒成體所構成的接合層，前述電路層與前述半導體元件係經由前述底層及前述接合層來接合。
  2. 如申請專利範圍第1項之半導體裝置，其中，具備陶瓷電路基板，其係具有：前述電路層，及被配設於前述電路層的另一方的面之陶瓷基板，前述半導體元件為功率半導體元件。
  3. 一種陶瓷電路基板，係使用在申請專利範圍第2項所記載的半導體裝置之陶瓷電路基板，其特徵為：具有：由導電性材料所構成的電路層，及被形成於前述電路層的一方的面的底層、及被配設於前述電路層的另一方的面的陶瓷基板，前述底層係具備：被形成於前述電路層側的玻璃層、及被形成於此玻璃層上的Ag層，且氣孔率為5%以上55% 以下的範圍內。
  4. 一種半導體裝置的製造方法，係申請專利範圍第1或2項所記載的半導體裝置之製造方法，其特徵係具備：底層形成工程，其係於前述電路層的一方的面形成具備被形成於前述電路層側的玻璃層、及被形成於此玻璃層上的Ag層，且氣孔率為5%以上55%以下的範圍內的底層；接合材配設工程，其係於前述底層之上配設含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材；半導體元件層疊工程，其係於前述接合材之上層疊前述半導體元件；及燒成工程，其係於層疊前述半導體元件、前述接合材、前述底層及前述電路層的狀態下加熱，而於前述底層之上形成由含金屬粒子及金屬氧化物粒子的至少一方或雙方及有機物之接合材的燒成體所構成的接合層，前述底層形成工程係具有：塗佈含玻璃成分的含玻璃Ag糊之工程、及將前述含玻璃Ag糊燒成之工程，使前述電路層與前述半導體元件經由前述底層及前述接合層來接合。
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