SG11201907437UA - Efficient utilization of memory die area - Google Patents
Efficient utilization of memory die areaInfo
- Publication number
- SG11201907437UA SG11201907437UA SG11201907437UA SG11201907437UA SG11201907437UA SG 11201907437U A SG11201907437U A SG 11201907437UA SG 11201907437U A SG11201907437U A SG 11201907437UA SG 11201907437U A SG11201907437U A SG 11201907437UA SG 11201907437U A SG11201907437U A SG 11201907437UA
- Authority
- SG
- Singapore
- Prior art keywords
- memory
- ho1l
- international
- tiles
- array
- Prior art date
Links
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 230000008520 organization Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Error Detection And Correction (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/434,395 US10347333B2 (en) | 2017-02-16 | 2017-02-16 | Efficient utilization of memory die area |
PCT/US2018/017204 WO2018151987A1 (fr) | 2017-02-16 | 2018-02-07 | Utilisation efficace de surface de puce de mémoire |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201907437UA true SG11201907437UA (en) | 2019-09-27 |
Family
ID=63105396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201907437UA SG11201907437UA (en) | 2017-02-16 | 2018-02-07 | Efficient utilization of memory die area |
Country Status (8)
Country | Link |
---|---|
US (4) | US10347333B2 (fr) |
EP (1) | EP3583627A4 (fr) |
JP (2) | JP6905067B2 (fr) |
KR (1) | KR102097257B1 (fr) |
CN (1) | CN110291641B (fr) |
SG (1) | SG11201907437UA (fr) |
TW (1) | TWI663606B (fr) |
WO (1) | WO2018151987A1 (fr) |
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US9792958B1 (en) | 2017-02-16 | 2017-10-17 | Micron Technology, Inc. | Active boundary quilt architecture memory |
WO2018173851A1 (fr) * | 2017-03-24 | 2018-09-27 | ソニーセミコンダクタソリューションズ株式会社 | Dispositif de stockage |
KR102462503B1 (ko) * | 2017-11-27 | 2022-11-02 | 삼성전자주식회사 | 수직형 구조를 가지는 불휘발성 메모리 장치 및 이를 포함하는 메모리 시스템 |
US11211403B2 (en) | 2017-11-27 | 2021-12-28 | Samsung Electronics Co., Ltd. | Nonvolatile memory device having a vertical structure and a memory system including the same |
US11017833B2 (en) | 2018-05-24 | 2021-05-25 | Micron Technology, Inc. | Apparatuses and methods for pure-time, self adopt sampling for row hammer refresh sampling |
US10573370B2 (en) | 2018-07-02 | 2020-02-25 | Micron Technology, Inc. | Apparatus and methods for triggering row hammer address sampling |
US10685696B2 (en) | 2018-10-31 | 2020-06-16 | Micron Technology, Inc. | Apparatuses and methods for access based refresh timing |
CN113168861B (zh) | 2018-12-03 | 2024-05-14 | 美光科技公司 | 执行行锤刷新操作的半导体装置 |
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US11309010B2 (en) | 2020-08-14 | 2022-04-19 | Micron Technology, Inc. | Apparatuses, systems, and methods for memory directed access pause |
US11348631B2 (en) | 2020-08-19 | 2022-05-31 | Micron Technology, Inc. | Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed |
US11380382B2 (en) | 2020-08-19 | 2022-07-05 | Micron Technology, Inc. | Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit |
US11557331B2 (en) | 2020-09-23 | 2023-01-17 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh operations |
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-
2017
- 2017-02-16 US US15/434,395 patent/US10347333B2/en active Active
-
2018
- 2018-02-07 EP EP18754065.3A patent/EP3583627A4/fr active Pending
- 2018-02-07 KR KR1020197026300A patent/KR102097257B1/ko active IP Right Grant
- 2018-02-07 CN CN201880011856.5A patent/CN110291641B/zh active Active
- 2018-02-07 SG SG11201907437UA patent/SG11201907437UA/en unknown
- 2018-02-07 WO PCT/US2018/017204 patent/WO2018151987A1/fr unknown
- 2018-02-07 JP JP2019543777A patent/JP6905067B2/ja active Active
- 2018-02-13 TW TW107105123A patent/TWI663606B/zh active
-
2019
- 2019-05-07 US US16/405,617 patent/US10510407B2/en active Active
- 2019-11-04 US US16/673,772 patent/US10896725B2/en active Active
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2020
- 2020-12-22 US US17/130,210 patent/US11170850B2/en active Active
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2021
- 2021-04-28 JP JP2021075896A patent/JP2021122054A/ja not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
US11170850B2 (en) | 2021-11-09 |
US10510407B2 (en) | 2019-12-17 |
EP3583627A1 (fr) | 2019-12-25 |
JP2020514939A (ja) | 2020-05-21 |
US20210183441A1 (en) | 2021-06-17 |
US20190267083A1 (en) | 2019-08-29 |
US20180233197A1 (en) | 2018-08-16 |
WO2018151987A1 (fr) | 2018-08-23 |
TW201839762A (zh) | 2018-11-01 |
US10896725B2 (en) | 2021-01-19 |
EP3583627A4 (fr) | 2020-12-09 |
US20200066339A1 (en) | 2020-02-27 |
TWI663606B (zh) | 2019-06-21 |
US10347333B2 (en) | 2019-07-09 |
JP6905067B2 (ja) | 2021-07-21 |
CN110291641A (zh) | 2019-09-27 |
JP2021122054A (ja) | 2021-08-26 |
KR102097257B1 (ko) | 2020-04-06 |
KR20190108174A (ko) | 2019-09-23 |
CN110291641B (zh) | 2024-01-05 |
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