SG11201808666PA - Charge extraction from ferroelectric memory cell - Google Patents

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property MD 1101111 0 DOI 0I0 11111 0I0 11111 0 111 0I0 Ell EOM 100 HMI 1111 HMI Organization International Bureau (10) International Publication Number 0 (43) International Publication Date .....0\"\" WO 2017/176467 A3 12 October 2017 (12.10.2017) WIPO I PCT (51) International Patent Classification: (72) Inventor: VIMERCATI, Daniele; 8000 S. Federal Way, G11C 11/22 (2006.01) Boise, ID 83716 (US). (21) International Application Number: (74) Agent: KRAFT, Aaron, J.; Holland & Hart LLP, P.O. Box PCT/US2017/023907 11583, Salt Lake City, UT 84147 (US). (22) International Filing Date: (81) Designated States (unless otherwise indicated, for every 23 March 2017 (23.03.2017) kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, (25) Filing Language: English CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, (26) Publication Language: English DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, (30) Priority Data: KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, 15/090,789 05 April 2016 (05.04.2016) US MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, (71) Applicant: MICRON TECHNOLOGY, INC. [US/US]; PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, 8000 S. Federal Way, Boise, ID 83716 (US). SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (54) Title: CHARGE EXTRACTION FROM FERROELECTRIC MEMORY 115-b I05-b i r 415 ci CELL 435 225-a T T 1 DL 125-b 110-b 440 -\.• IV I VL—I = = \ 401 I5 — 7 Ea 111 Reference Component f\") ,- mu 220-a 205-a\ 410 420 425 M ..11 (57) : Methods, systems, IN of a memory cell may be in grounded during memory cell Z stored charge of the ferroelectric IN be achieved by activating a switching --... 7 1 line. The charge of the ferroelectric IN voltage of the sense capacitor Il 0 ei —P, c .' 210-a electronic sensing, limiting capacitor to a reference voltage in order to determine the stored logic state of the memory cell. and devices for operating a ferroelectric memory cell or cells are described. A ferroelectric capacitor capacitor component (e.g., a p-type field-effect communication FIG. 4 with a sense capacitor or avoiding voltage drop across to be extracted and transferred to may be transferred through the L M ) I I 430 the the sense capacitor. Virtually grounding the digit line may transistor) switching through \\"--- 400 a digit line. The digit line may be virtually digit line, and allowing all or substantially all of the that is electronic communication with the digit component. A sense amplifier may compare the O [Continued on next page] WO 2017/176467 A3 MIDEDIM011111111111111111111111111111111111111111 11111 VIII 1110111111111111111 (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(ii)) — as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: — with international search report (Art. 21(3)) (88) Date of publication of the international search report: 16 August 2018 (16.08.2018)