SG11201906281RA - Activation of wafer particle defects for spectroscopic composition analysis - Google Patents
Activation of wafer particle defects for spectroscopic composition analysisInfo
- Publication number
- SG11201906281RA SG11201906281RA SG11201906281RA SG11201906281RA SG11201906281RA SG 11201906281R A SG11201906281R A SG 11201906281RA SG 11201906281R A SG11201906281R A SG 11201906281RA SG 11201906281R A SG11201906281R A SG 11201906281RA SG 11201906281R A SG11201906281R A SG 11201906281RA
- Authority
- SG
- Singapore
- Prior art keywords
- particle
- international
- wafer
- composition analysis
- spectroscopic
- Prior art date
Links
- 239000002245 particle Substances 0.000 title abstract 11
- 230000007547 defect Effects 0.000 title abstract 6
- 238000004458 analytical method Methods 0.000 title abstract 4
- 230000004913 activation Effects 0.000 title abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 6
- 238000005516 engineering process Methods 0.000 abstract 2
- 238000007689 inspection Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000012306 spectroscopic technique Methods 0.000 abstract 2
- 238000011282 treatment Methods 0.000 abstract 2
- 238000001069 Raman spectroscopy Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 230000001131 transforming effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/419,355 US10551320B2 (en) | 2017-01-30 | 2017-01-30 | Activation of wafer particle defects for spectroscopic composition analysis |
| PCT/US2018/015570 WO2018140805A1 (en) | 2017-01-30 | 2018-01-26 | Activation of wafer particle defects for spectroscopic composition analysis |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201906281RA true SG11201906281RA (en) | 2019-08-27 |
Family
ID=62977757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201906281RA SG11201906281RA (en) | 2017-01-30 | 2018-01-26 | Activation of wafer particle defects for spectroscopic composition analysis |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10551320B2 (enExample) |
| EP (1) | EP3549160B1 (enExample) |
| JP (1) | JP6916886B2 (enExample) |
| KR (1) | KR102353259B1 (enExample) |
| CN (1) | CN110313058B (enExample) |
| SG (1) | SG11201906281RA (enExample) |
| TW (1) | TWI764979B (enExample) |
| WO (1) | WO2018140805A1 (enExample) |
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| US10438339B1 (en) * | 2016-09-12 | 2019-10-08 | Apple Inc. | Optical verification system and methods of verifying micro device transfer |
| IL310722B2 (en) * | 2018-07-13 | 2025-07-01 | Asml Netherlands Bv | SEM image enhancement systems and methods |
| IL263106B2 (en) * | 2018-11-19 | 2023-02-01 | Nova Ltd | Integrated measurement system |
| CN111007016A (zh) * | 2019-12-09 | 2020-04-14 | 暨南大学 | 一种检测透明材料表面微小颗粒杂质的装置及使用方法 |
| KR102788882B1 (ko) | 2020-03-26 | 2025-04-01 | 삼성전자주식회사 | 기판 검사 시스템 |
| CN111879749B (zh) * | 2020-07-23 | 2023-02-14 | 西安近代化学研究所 | 压装pbx炸药柱中nto晶体品质表征方法 |
| US12345658B2 (en) | 2020-09-24 | 2025-07-01 | Kla Corporation | Large-particle monitoring with laser power control for defect inspection |
| KR20220041388A (ko) | 2020-09-25 | 2022-04-01 | 세메스 주식회사 | 광학계 교정 방법 |
| EP3995808B1 (de) * | 2020-11-09 | 2023-01-04 | Siltronic AG | Verfahren zum klassifizieren von unbekannten partikeln auf einer oberfläche einer halbleiterscheibe |
| KR102501486B1 (ko) * | 2020-12-10 | 2023-02-17 | 한국화학연구원 | 나노 입자 또는 나노 구조체에서 발생된 분광 신호 분석 시스템 및 분석 방법 |
| US11879853B2 (en) * | 2021-02-19 | 2024-01-23 | Kla Corporation | Continuous degenerate elliptical retarder for sensitive particle detection |
| CN113884443A (zh) * | 2021-05-19 | 2022-01-04 | 北京航空航天大学 | 基于磁光克尔效应的磁性晶圆大视野成像方法和成像装置 |
| CN114544208A (zh) * | 2021-11-04 | 2022-05-27 | 万向一二三股份公司 | 一种超声焊接机稳定性检测装置和方法 |
| KR102602029B1 (ko) * | 2021-11-11 | 2023-11-14 | 주식회사 에타맥스 | 광루미네선스 검사와 자동광학검사를 동시에 수행하는 마이크로 led 검사장비 |
| TWI833390B (zh) * | 2022-02-23 | 2024-02-21 | 南亞科技股份有限公司 | 製造缺陷原因之識別系統以及非暫時性電腦可讀媒體 |
| US12118709B2 (en) | 2022-02-23 | 2024-10-15 | Nanya Technology Corporation | Method for identifying cause of manufacturing defects |
| US12175652B2 (en) | 2022-02-23 | 2024-12-24 | Nanya Technology Corporation | System and non-transitory computer-readable medium for identifying cause of manufacturing defects |
| KR102781411B1 (ko) * | 2022-11-03 | 2025-03-17 | 한국기계연구원 | 필터 교체형 플라즈마 모니터링 시스템 및 이를 이용한 플라즈마 모니터링 방법 |
| CN116660285B (zh) * | 2023-07-26 | 2023-11-17 | 浙江大学 | 一种晶圆特征光谱在线检测装置 |
| FR3155632B1 (fr) * | 2023-11-21 | 2025-11-07 | Soitec Silicon On Insulator | procédé de fabrication d’une structure composite incluant une étape de gradation |
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| US20160293502A1 (en) * | 2015-03-31 | 2016-10-06 | Lam Research Corporation | Method and apparatus for detecting defects on wafers |
-
2017
- 2017-01-30 US US15/419,355 patent/US10551320B2/en active Active
-
2018
- 2018-01-26 SG SG11201906281RA patent/SG11201906281RA/en unknown
- 2018-01-26 WO PCT/US2018/015570 patent/WO2018140805A1/en not_active Ceased
- 2018-01-26 JP JP2019541117A patent/JP6916886B2/ja active Active
- 2018-01-26 KR KR1020197025088A patent/KR102353259B1/ko active Active
- 2018-01-26 CN CN201880009158.1A patent/CN110313058B/zh active Active
- 2018-01-26 EP EP18744003.7A patent/EP3549160B1/en active Active
- 2018-01-30 TW TW107103149A patent/TWI764979B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US20180217065A1 (en) | 2018-08-02 |
| EP3549160A1 (en) | 2019-10-09 |
| CN110313058A (zh) | 2019-10-08 |
| EP3549160A4 (en) | 2020-07-08 |
| EP3549160B1 (en) | 2022-01-05 |
| CN110313058B (zh) | 2022-06-28 |
| JP6916886B2 (ja) | 2021-08-11 |
| WO2018140805A1 (en) | 2018-08-02 |
| TWI764979B (zh) | 2022-05-21 |
| US10551320B2 (en) | 2020-02-04 |
| KR102353259B1 (ko) | 2022-01-18 |
| KR20190104628A (ko) | 2019-09-10 |
| TW201832304A (zh) | 2018-09-01 |
| JP2020505607A (ja) | 2020-02-20 |
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