KR102353259B1 - 분광 조성 분석을 위한 웨이퍼 파티클 결함들의 활성화 - Google Patents
분광 조성 분석을 위한 웨이퍼 파티클 결함들의 활성화 Download PDFInfo
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- KR102353259B1 KR102353259B1 KR1020197025088A KR20197025088A KR102353259B1 KR 102353259 B1 KR102353259 B1 KR 102353259B1 KR 1020197025088 A KR1020197025088 A KR 1020197025088A KR 20197025088 A KR20197025088 A KR 20197025088A KR 102353259 B1 KR102353259 B1 KR 102353259B1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/419,355 | 2017-01-30 | ||
| US15/419,355 US10551320B2 (en) | 2017-01-30 | 2017-01-30 | Activation of wafer particle defects for spectroscopic composition analysis |
| PCT/US2018/015570 WO2018140805A1 (en) | 2017-01-30 | 2018-01-26 | Activation of wafer particle defects for spectroscopic composition analysis |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190104628A KR20190104628A (ko) | 2019-09-10 |
| KR102353259B1 true KR102353259B1 (ko) | 2022-01-18 |
Family
ID=62977757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020197025088A Active KR102353259B1 (ko) | 2017-01-30 | 2018-01-26 | 분광 조성 분석을 위한 웨이퍼 파티클 결함들의 활성화 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10551320B2 (enExample) |
| EP (1) | EP3549160B1 (enExample) |
| JP (1) | JP6916886B2 (enExample) |
| KR (1) | KR102353259B1 (enExample) |
| CN (1) | CN110313058B (enExample) |
| SG (1) | SG11201906281RA (enExample) |
| TW (1) | TWI764979B (enExample) |
| WO (1) | WO2018140805A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10438339B1 (en) * | 2016-09-12 | 2019-10-08 | Apple Inc. | Optical verification system and methods of verifying micro device transfer |
| IL310722B2 (en) * | 2018-07-13 | 2025-07-01 | Asml Netherlands Bv | SEM image enhancement systems and methods |
| IL263106B2 (en) * | 2018-11-19 | 2023-02-01 | Nova Ltd | Integrated measurement system |
| CN111007016A (zh) * | 2019-12-09 | 2020-04-14 | 暨南大学 | 一种检测透明材料表面微小颗粒杂质的装置及使用方法 |
| KR102788882B1 (ko) | 2020-03-26 | 2025-04-01 | 삼성전자주식회사 | 기판 검사 시스템 |
| CN111879749B (zh) * | 2020-07-23 | 2023-02-14 | 西安近代化学研究所 | 压装pbx炸药柱中nto晶体品质表征方法 |
| US12345658B2 (en) | 2020-09-24 | 2025-07-01 | Kla Corporation | Large-particle monitoring with laser power control for defect inspection |
| KR20220041388A (ko) | 2020-09-25 | 2022-04-01 | 세메스 주식회사 | 광학계 교정 방법 |
| EP3995808B1 (de) * | 2020-11-09 | 2023-01-04 | Siltronic AG | Verfahren zum klassifizieren von unbekannten partikeln auf einer oberfläche einer halbleiterscheibe |
| KR102501486B1 (ko) * | 2020-12-10 | 2023-02-17 | 한국화학연구원 | 나노 입자 또는 나노 구조체에서 발생된 분광 신호 분석 시스템 및 분석 방법 |
| US11879853B2 (en) * | 2021-02-19 | 2024-01-23 | Kla Corporation | Continuous degenerate elliptical retarder for sensitive particle detection |
| CN113884443A (zh) * | 2021-05-19 | 2022-01-04 | 北京航空航天大学 | 基于磁光克尔效应的磁性晶圆大视野成像方法和成像装置 |
| CN114544208A (zh) * | 2021-11-04 | 2022-05-27 | 万向一二三股份公司 | 一种超声焊接机稳定性检测装置和方法 |
| KR102602029B1 (ko) * | 2021-11-11 | 2023-11-14 | 주식회사 에타맥스 | 광루미네선스 검사와 자동광학검사를 동시에 수행하는 마이크로 led 검사장비 |
| TWI833390B (zh) * | 2022-02-23 | 2024-02-21 | 南亞科技股份有限公司 | 製造缺陷原因之識別系統以及非暫時性電腦可讀媒體 |
| US12118709B2 (en) | 2022-02-23 | 2024-10-15 | Nanya Technology Corporation | Method for identifying cause of manufacturing defects |
| US12175652B2 (en) | 2022-02-23 | 2024-12-24 | Nanya Technology Corporation | System and non-transitory computer-readable medium for identifying cause of manufacturing defects |
| KR102781411B1 (ko) * | 2022-11-03 | 2025-03-17 | 한국기계연구원 | 필터 교체형 플라즈마 모니터링 시스템 및 이를 이용한 플라즈마 모니터링 방법 |
| CN116660285B (zh) * | 2023-07-26 | 2023-11-17 | 浙江大学 | 一种晶圆特征光谱在线检测装置 |
| FR3155632B1 (fr) * | 2023-11-21 | 2025-11-07 | Soitec Silicon On Insulator | procédé de fabrication d’une structure composite incluant une étape de gradation |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080129988A1 (en) | 2006-12-05 | 2008-06-05 | Jason Saito | Methods and systems for identifying defect types on a wafer |
| US20110292376A1 (en) | 2010-05-26 | 2011-12-01 | Kukushkin Igor V | Apparatus and method for detecting raman and photoluminescence spectra of a substance |
| US20130050689A1 (en) | 2011-08-15 | 2013-02-28 | Kla-Tencor Corporation | Large Particle Detection For Multi-Spot Surface Scanning Inspection Systems |
Family Cites Families (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4978862A (en) * | 1988-07-13 | 1990-12-18 | Vti, Inc. | Method and apparatus for nondestructively measuring micro defects in materials |
| US6271916B1 (en) | 1994-03-24 | 2001-08-07 | Kla-Tencor Corporation | Process and assembly for non-destructive surface inspections |
| JP3258821B2 (ja) * | 1994-06-02 | 2002-02-18 | 三菱電機株式会社 | 微小異物の位置決め方法、分析方法、これに用いる分析装置およびこれを用いた半導体素子もしくは液晶表示素子の製法 |
| US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
| US5943552A (en) * | 1997-02-06 | 1999-08-24 | Seh America, Inc. | Schottky metal detection method |
| US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
| US6201601B1 (en) | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
| US6208411B1 (en) | 1998-09-28 | 2001-03-27 | Kla-Tencor Corporation | Massively parallel inspection and imaging system |
| US6067154A (en) * | 1998-10-23 | 2000-05-23 | Advanced Micro Devices, Inc. | Method and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopy |
| JP3741602B2 (ja) * | 1999-11-26 | 2006-02-01 | 日本電子株式会社 | 顕微ラマン分光システム |
| US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| US6911347B2 (en) * | 2000-10-06 | 2005-06-28 | Aoti Operating Company, Inc. | Method to detect surface metal contamination |
| US6791099B2 (en) * | 2001-02-14 | 2004-09-14 | Applied Materials, Inc. | Laser scanning wafer inspection using nonlinear optical phenomena |
| US6597446B2 (en) * | 2001-03-22 | 2003-07-22 | Sentec Corporation | Holographic scatterometer for detection and analysis of wafer surface deposits |
| JP2003059988A (ja) * | 2001-08-10 | 2003-02-28 | Matsushita Electric Ind Co Ltd | 半導体装置の欠陥検出法および装置 |
| AU2002349791A1 (en) * | 2001-11-06 | 2003-05-19 | C.I. Systems Ltd. | In-line spectroscopy for process monitoring |
| US6986280B2 (en) * | 2002-01-22 | 2006-01-17 | Fei Company | Integrated measuring instrument |
| US7130039B2 (en) | 2002-04-18 | 2006-10-31 | Kla-Tencor Technologies Corporation | Simultaneous multi-spot inspection and imaging |
| GB0308182D0 (en) * | 2003-04-09 | 2003-05-14 | Aoti Operating Co Inc | Detection method and apparatus |
| US7295303B1 (en) | 2004-03-25 | 2007-11-13 | Kla-Tencor Technologies Corporation | Methods and apparatus for inspecting a sample |
| US7200498B2 (en) * | 2004-05-26 | 2007-04-03 | Texas Instruments Incorporated | System for remediating cross contamination in semiconductor manufacturing processes |
| GB0510497D0 (en) * | 2004-08-04 | 2005-06-29 | Horiba Ltd | Substrate examining device |
| US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| US7433056B1 (en) * | 2005-07-15 | 2008-10-07 | Kla-Tencor Technologies Corporation | Scatterometry metrology using inelastic scattering |
| JP2007139491A (ja) * | 2005-11-16 | 2007-06-07 | Seiko Epson Corp | 欠陥の測定方法 |
| US7372559B2 (en) * | 2005-12-14 | 2008-05-13 | Kla-Tencor Technologies Corp. | Systems and methods for inspecting a wafer with increased sensitivity |
| US20070176119A1 (en) * | 2006-01-30 | 2007-08-02 | Accent Optical Technologies, Inc. | Apparatuses and methods for analyzing semiconductor workpieces |
| US7567351B2 (en) | 2006-02-02 | 2009-07-28 | Kla-Tencor Corporation | High resolution monitoring of CD variations |
| US7436505B2 (en) * | 2006-04-04 | 2008-10-14 | Kla-Tencor Technologies Corp. | Computer-implemented methods and systems for determining a configuration for a light scattering inspection system |
| JP5147202B2 (ja) * | 2006-06-30 | 2013-02-20 | 株式会社日立ハイテクノロジーズ | 光学式欠陥検査装置 |
| US7362426B1 (en) * | 2006-10-06 | 2008-04-22 | Wafermasters, Inc. | Raman and photoluminescence spectroscopy |
| US7659979B2 (en) * | 2006-10-17 | 2010-02-09 | Kla-Tencor Corporation | Optical inspection apparatus and method |
| US20080151259A1 (en) * | 2006-12-21 | 2008-06-26 | Woo Sik Yoo | Synchronized wafer mapping |
| WO2008154186A1 (en) * | 2007-06-06 | 2008-12-18 | Semiconductor Diagnostics, Inc. | Enhanced sensitivity non-contact electrical monitoring of copper contamination on silicon surface |
| JP2009014510A (ja) * | 2007-07-04 | 2009-01-22 | Hitachi High-Technologies Corp | 検査方法及び検査装置 |
| US8169613B1 (en) * | 2008-11-21 | 2012-05-01 | Kla-Tencor Corp. | Segmented polarizer for optimizing performance of a surface inspection system |
| JP2011009554A (ja) | 2009-06-26 | 2011-01-13 | Fujitsu Semiconductor Ltd | 欠陥検査方法及び欠陥検査装置 |
| WO2011015412A1 (en) * | 2009-08-04 | 2011-02-10 | Asml Netherlands B.V. | Object inspection systems and methods |
| JP2014503843A (ja) * | 2010-12-06 | 2014-02-13 | エーエスエムエル ネザーランズ ビー.ブイ. | 物品の検査方法および検査装置、euvリソグラフィレチクル、リソグラフィ装置、ならびにデバイス製造方法 |
| CA3097861A1 (en) * | 2011-01-21 | 2012-07-26 | Labrador Diagnostics Llc | Systems and methods for sample use maximization |
| US9329033B2 (en) * | 2012-09-05 | 2016-05-03 | Kla-Tencor Corporation | Method for estimating and correcting misregistration target inaccuracy |
| US9581430B2 (en) | 2012-10-19 | 2017-02-28 | Kla-Tencor Corporation | Phase characterization of targets |
| US8786850B2 (en) * | 2012-10-29 | 2014-07-22 | Kla-Tencor Corporation | Illumination energy management in surface inspection |
| US10769320B2 (en) | 2012-12-18 | 2020-09-08 | Kla-Tencor Corporation | Integrated use of model-based metrology and a process model |
| US9291554B2 (en) | 2013-02-05 | 2016-03-22 | Kla-Tencor Corporation | Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection |
| US9529182B2 (en) * | 2013-02-13 | 2016-12-27 | KLA—Tencor Corporation | 193nm laser and inspection system |
| US9354177B2 (en) * | 2013-06-26 | 2016-05-31 | Kla-Tencor Corporation | System and method for defect detection and photoluminescence measurement of a sample |
| US9804101B2 (en) * | 2014-03-20 | 2017-10-31 | Kla-Tencor Corporation | System and method for reducing the bandwidth of a laser and an inspection system and method using a laser |
| US10078204B2 (en) * | 2014-03-29 | 2018-09-18 | Intel Corporation | Non-destructive 3-dimensional chemical imaging of photo-resist material |
| US20160293502A1 (en) * | 2015-03-31 | 2016-10-06 | Lam Research Corporation | Method and apparatus for detecting defects on wafers |
-
2017
- 2017-01-30 US US15/419,355 patent/US10551320B2/en active Active
-
2018
- 2018-01-26 SG SG11201906281RA patent/SG11201906281RA/en unknown
- 2018-01-26 WO PCT/US2018/015570 patent/WO2018140805A1/en not_active Ceased
- 2018-01-26 JP JP2019541117A patent/JP6916886B2/ja active Active
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- 2018-01-26 EP EP18744003.7A patent/EP3549160B1/en active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080129988A1 (en) | 2006-12-05 | 2008-06-05 | Jason Saito | Methods and systems for identifying defect types on a wafer |
| US20110292376A1 (en) | 2010-05-26 | 2011-12-01 | Kukushkin Igor V | Apparatus and method for detecting raman and photoluminescence spectra of a substance |
| US20130050689A1 (en) | 2011-08-15 | 2013-02-28 | Kla-Tencor Corporation | Large Particle Detection For Multi-Spot Surface Scanning Inspection Systems |
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| US20180217065A1 (en) | 2018-08-02 |
| EP3549160A1 (en) | 2019-10-09 |
| CN110313058A (zh) | 2019-10-08 |
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| EP3549160B1 (en) | 2022-01-05 |
| CN110313058B (zh) | 2022-06-28 |
| JP6916886B2 (ja) | 2021-08-11 |
| WO2018140805A1 (en) | 2018-08-02 |
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| SG11201906281RA (en) | 2019-08-27 |
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| TW201832304A (zh) | 2018-09-01 |
| JP2020505607A (ja) | 2020-02-20 |
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