CN110313058B - 表面检验系统及方法 - Google Patents

表面检验系统及方法 Download PDF

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Publication number
CN110313058B
CN110313058B CN201880009158.1A CN201880009158A CN110313058B CN 110313058 B CN110313058 B CN 110313058B CN 201880009158 A CN201880009158 A CN 201880009158A CN 110313058 B CN110313058 B CN 110313058B
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China
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particles
defective
particle
detected
activated
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Chinese (zh)
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CN110313058A (zh
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K·哈勒尔
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
CN201880009158.1A 2017-01-30 2018-01-26 表面检验系统及方法 Active CN110313058B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/419,355 2017-01-30
US15/419,355 US10551320B2 (en) 2017-01-30 2017-01-30 Activation of wafer particle defects for spectroscopic composition analysis
PCT/US2018/015570 WO2018140805A1 (en) 2017-01-30 2018-01-26 Activation of wafer particle defects for spectroscopic composition analysis

Publications (2)

Publication Number Publication Date
CN110313058A CN110313058A (zh) 2019-10-08
CN110313058B true CN110313058B (zh) 2022-06-28

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Family Applications (1)

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CN201880009158.1A Active CN110313058B (zh) 2017-01-30 2018-01-26 表面检验系统及方法

Country Status (8)

Country Link
US (1) US10551320B2 (enExample)
EP (1) EP3549160B1 (enExample)
JP (1) JP6916886B2 (enExample)
KR (1) KR102353259B1 (enExample)
CN (1) CN110313058B (enExample)
SG (1) SG11201906281RA (enExample)
TW (1) TWI764979B (enExample)
WO (1) WO2018140805A1 (enExample)

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CN111879749B (zh) * 2020-07-23 2023-02-14 西安近代化学研究所 压装pbx炸药柱中nto晶体品质表征方法
US12345658B2 (en) 2020-09-24 2025-07-01 Kla Corporation Large-particle monitoring with laser power control for defect inspection
KR20220041388A (ko) 2020-09-25 2022-04-01 세메스 주식회사 광학계 교정 방법
EP3995808B1 (de) * 2020-11-09 2023-01-04 Siltronic AG Verfahren zum klassifizieren von unbekannten partikeln auf einer oberfläche einer halbleiterscheibe
KR102501486B1 (ko) * 2020-12-10 2023-02-17 한국화학연구원 나노 입자 또는 나노 구조체에서 발생된 분광 신호 분석 시스템 및 분석 방법
US11879853B2 (en) * 2021-02-19 2024-01-23 Kla Corporation Continuous degenerate elliptical retarder for sensitive particle detection
CN113884443A (zh) * 2021-05-19 2022-01-04 北京航空航天大学 基于磁光克尔效应的磁性晶圆大视野成像方法和成像装置
CN114544208A (zh) * 2021-11-04 2022-05-27 万向一二三股份公司 一种超声焊接机稳定性检测装置和方法
KR102602029B1 (ko) * 2021-11-11 2023-11-14 주식회사 에타맥스 광루미네선스 검사와 자동광학검사를 동시에 수행하는 마이크로 led 검사장비
TWI833390B (zh) * 2022-02-23 2024-02-21 南亞科技股份有限公司 製造缺陷原因之識別系統以及非暫時性電腦可讀媒體
US12118709B2 (en) 2022-02-23 2024-10-15 Nanya Technology Corporation Method for identifying cause of manufacturing defects
US12175652B2 (en) 2022-02-23 2024-12-24 Nanya Technology Corporation System and non-transitory computer-readable medium for identifying cause of manufacturing defects
KR102781411B1 (ko) * 2022-11-03 2025-03-17 한국기계연구원 필터 교체형 플라즈마 모니터링 시스템 및 이를 이용한 플라즈마 모니터링 방법
CN116660285B (zh) * 2023-07-26 2023-11-17 浙江大学 一种晶圆特征光谱在线检测装置
FR3155632B1 (fr) * 2023-11-21 2025-11-07 Soitec Silicon On Insulator procédé de fabrication d’une structure composite incluant une étape de gradation

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Also Published As

Publication number Publication date
US20180217065A1 (en) 2018-08-02
EP3549160A1 (en) 2019-10-09
CN110313058A (zh) 2019-10-08
EP3549160A4 (en) 2020-07-08
EP3549160B1 (en) 2022-01-05
JP6916886B2 (ja) 2021-08-11
WO2018140805A1 (en) 2018-08-02
TWI764979B (zh) 2022-05-21
US10551320B2 (en) 2020-02-04
KR102353259B1 (ko) 2022-01-18
SG11201906281RA (en) 2019-08-27
KR20190104628A (ko) 2019-09-10
TW201832304A (zh) 2018-09-01
JP2020505607A (ja) 2020-02-20

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